JPS63244889A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63244889A JPS63244889A JP62080113A JP8011387A JPS63244889A JP S63244889 A JPS63244889 A JP S63244889A JP 62080113 A JP62080113 A JP 62080113A JP 8011387 A JP8011387 A JP 8011387A JP S63244889 A JPS63244889 A JP S63244889A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity
- semiconductor
- type
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 239000012535 impurity Substances 0.000 claims abstract description 39
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 229910004541 SiN Inorganic materials 0.000 abstract 1
- 229910020328 SiSn Inorganic materials 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- 150000004678 hydrides Chemical class 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、半導体装置に関し、特に光電変換の半導体
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor device, and particularly to a photoelectric conversion semiconductor device.
［従来の技術］
第２図は、受光面側に、ａ−８ｉｃ：Ｉ−Ｉのように、
バンドギャップの広い半導体層を用いたｐ−１−ｎ型非
晶質による多重接合型太陽電池を示していて、ここで図
示したように、バンドギャップの広いｐ型半導体層（４
）とｉ型半導体層（６）との間に、バンドギャップ及び
不純物濃度がｉ型半導体層（６）に向かって段階的に減
少しているようないわゆるグレーディングギャップ層【
５）を設けることにより、太陽電池の光電変換効率が向
上することは一般によく知られている。[Prior art] In Fig. 2, on the light-receiving surface side, like a-8ic:I-I,
This shows a p-1-n type amorphous multi-junction solar cell using a wide bandgap semiconductor layer.
) and the i-type semiconductor layer (6), there is a so-called grading gap layer in which the band gap and impurity concentration gradually decrease toward the i-type semiconductor layer (6).
It is generally well known that the photoelectric conversion efficiency of solar cells is improved by providing 5).
ところで、本発明者は実験により、上記構造の太陽電池
においては、・バンドギャップの広いｐ型半導体層（４
）の不純物濃度を通常の１１５ないしｌ／１０程度にま
で減少することにより、蛍光灯下のような低い照度の光
源のもとで光電変換効率を改善できるということを見出
だした。By the way, the present inventor has experimentally found that in a solar cell with the above structure: a p-type semiconductor layer with a wide band gap (4
) has been found to be able to improve the photoelectric conversion efficiency under low illumination light sources such as under fluorescent lamps by reducing the impurity concentration to about 115 to 1/10 of the usual level.
［発明が解決しようとする問題点コ
ところが、太陽光のように高い照ｍｌのもとでは、透明
電極（２）と、この不純物層であるｐ型半導体層（４）
との間の接触抵抗が著しく大きくなり、これによる電圧
降下が大きくなるため、光電変換効率は逆に低下し、又
、太陽電池を措成する各ｐ−１−ｎ接合の間に存在する
ｐ−ｎ界面が逆接合となるため、ここでも電圧降下が起
きるという問題があった。[Problems to be Solved by the Invention] However, under high illuminance such as sunlight, the transparent electrode (2) and the p-type semiconductor layer (4), which is an impurity layer,
The contact resistance between the p-1 and p-n junctions that make up the solar cell becomes significantly large, and the resulting voltage drop increases, so the photoelectric conversion efficiency decreases. Since the -n interface is a reverse junction, there is also a problem in that a voltage drop occurs here.
この発明は、上記問題を解決するためになされたもので
あり、高照度のもとでも光電変換効率の低下することの
ない半導体装置を提供することを目的とする。The present invention was made to solve the above problem, and an object of the present invention is to provide a semiconductor device whose photoelectric conversion efficiency does not deteriorate even under high illuminance.
［問題点を解決するための手段］
この発明の半導体装置は、受光面側に、活性層である真
性半導体のｉ層よりもバンドギャップの広いｐ層あるい
はｎ層の不純物層を有するｐ−１−ｎ型あるいはｎ−１
−ｐ型光起電力素子を多重に接合した非単結晶のシリコ
ン系半導体装置であって、少なくとも一つ以上の広バン
ドギャップ不純物層の更に受光面側に、該不純物層と同
じ導電型でかつ不純物濃度の高い高濃度不純物層を設け
るとともに、該広バンドギャップ層のｐ−１あるいはｎ
−ｉ界面に、ｐ層からｉ層あるいはｎ層からｉ層に向か
って不純物濃度を減少させてバンドギャップを狭くした
グレーディング層を設けている。[Means for Solving the Problems] The semiconductor device of the present invention has a p-1 impurity layer on the light-receiving surface side, which has a p-layer or an n-layer impurity layer having a wider bandgap than an i-layer of an intrinsic semiconductor that is an active layer. -n type or n-1
- A non-single-crystal silicon-based semiconductor device in which p-type photovoltaic elements are bonded in multiple layers, in which at least one wide bandgap impurity layer is further disposed on the light-receiving surface side, and is of the same conductivity type as the impurity layer. In addition to providing a high concentration impurity layer with a high impurity concentration, p-1 or n of the wide bandgap layer
A grading layer whose bandgap is narrowed by decreasing the impurity concentration from the p layer to the i layer or from the n layer to the i layer is provided at the -i interface.
［作用コ
上記のごとく、受光面側の透明導電膜と広バンドギャッ
プ不純物層との間に、該広バンドギャップ不純物層と同
じ導電型でかつ、不純物濃度の高い高濃度不純物層を設
けたので、広バンドギャップ不純物層と透明導￥ｒｉ膜
とにおけるオーミックス性が改善されて接触抵抗が低下
するため、高照度での光電変換効率が向上するようにな
る。[Operation: As described above, a high concentration impurity layer having the same conductivity type as the wide bandgap impurity layer and having a high impurity concentration is provided between the transparent conductive film on the light receiving surface side and the wide bandgap impurity layer. Since the ohmic properties between the wide bandgap impurity layer and the transparent conductive RI film are improved and the contact resistance is reduced, the photoelectric conversion efficiency at high illuminance is improved.
［実施例コ
この発明における非単結晶シリコン系半導体としては、
例えば、シリコン、シリコンカーバイド。[Example 1] As a non-single crystal silicon semiconductor in this invention,
For example, silicon, silicon carbide.
ＳｉＮ、５ｉＧｅ、５ｉＳｎ等の水素化膜、フッ素化膜
等、一般に光起電力素子に使用されるアモルファス系。Amorphous films commonly used in photovoltaic devices, such as hydrogenated films and fluorinated films such as SiN, 5iGe, and 5iSn.
微結晶を含むアモルファス又は多結晶系の半導体があげ
られる。Examples include amorphous or polycrystalline semiconductors containing microcrystals.
非単結晶シリコン系半導体は、窓層材料として広バンド
ギャップ半導体が用いられ、ｐ−１−ｎ型あるいはｎ−
１−ｐ型の光起電力素子とされ、更に一般に２重ないし
４重にされ、多重接合型光起電力素子が形成される。多
重接合型光起電力素子を形成する各非単結晶シリコン系
半導体の厚さは、特に限定されず、通常光起電力素子に
使用される範囲のものであればよい。In non-single crystal silicon semiconductors, wide bandgap semiconductors are used as window layer materials, and p-1-n type or n-type semiconductors are used.
It is a 1-p type photovoltaic device, and is generally doubled or quadrupled to form a multi-junction photovoltaic device. The thickness of each non-single-crystal silicon semiconductor forming the multi-junction photovoltaic device is not particularly limited, and may be within the range normally used for photovoltaic devices.
この発明においては、多重接合型光起電力素子のｐ−ｉ
又はｎ−ｉ界面にｉ層に向かって不純物濃度を減少させ
た、いわゆるグレーディング層を設け、更に透明導電膜
及びｐ−ｎ逆接合部におけるオーミックス性を改善する
ため、広バンドギャップ層の受光面側に高濃度の不純物
層を設けている。In this invention, the p-i of a multi-junction photovoltaic device is
Alternatively, a so-called grading layer is provided at the n-i interface with the impurity concentration decreasing toward the i layer, and in order to further improve the ohmic properties at the transparent conductive film and the p-n reverse junction, a wide bandgap layer is used for light reception. A highly concentrated impurity layer is provided on the surface side.
ｐ−ｉ又はｎ−ｉ界面部とは、第１図に示すように、ｐ
−ｉ又はｎ−ｉ界面部、Ｂ又は、これと接するｐ型半導
体層（４）、（１４）又はグレーディング層（５）、（
１５）であってもよく、又、総てのｐ−１又はｎ−ｉ界
面にグレーディング層を設けなくてもよい。又、受光面
の高濃度広バンドギャップ半導体層である不純物層とは
、（３）、（１３）であり、それぞれ、ｐ型半導体層（
４）、（１４）と同じ導電型を示す。ｐ−１又はｎ−ｉ
界面部分がｐ型半導体層又はｎ型半導体層の一部から形
成される場合、その層の厚さは、最大でｐ型半導体層ま
たはｎ型半導体層の厚さまで採用される。通常この層の
厚さは、ＩＯないし７００人程堆積ある。広バンドギャ
ップ高濃度不純物層としては、不純物層（広バンドギャ
ップ層）と同じＩＯないし３００人であるのが好ましく
、ｎ型半導体の場合はｐ型半導体等のドーパントを用い
るのがよく、この場合の厚さとしては、１０ないし３０
０人であるのが望ましい。 。The p-i or n-i interface refers to the p-i or n-i interface, as shown in
-i or n-i interface, B or the p-type semiconductor layer (4), (14) in contact with it, or the grading layer (5), (
15), and it is not necessary to provide a grading layer at all p-1 or n-i interfaces. Moreover, the impurity layer which is a high concentration wide bandgap semiconductor layer on the light receiving surface is (3) and (13), respectively, and the p-type semiconductor layer (
4), shows the same conductivity type as (14). p-1 or n-i
When the interface portion is formed from a part of the p-type semiconductor layer or the n-type semiconductor layer, the thickness of the layer is up to the thickness of the p-type semiconductor layer or the n-type semiconductor layer. Typically, the thickness of this layer is about IO or 700 deposits. The wide bandgap high concentration impurity layer is preferably the same as the impurity layer (wide bandgap layer) or 300%, and in the case of an n-type semiconductor, it is preferable to use a dopant such as a p-type semiconductor. The thickness is 10 to 30
It is desirable that there be 0 people. .
又、このときの不純物濃度としては、電極との接触抵抗
が十分に低くなる程度まで必要であるが、不純物の種類
や高不純物層の厚さにより異なる。Further, the impurity concentration at this time is required to a degree that the contact resistance with the electrode is sufficiently low, but it varies depending on the type of impurity and the thickness of the highly impurity layer.
不純物がｐ型あるいはドーパントである場合、通常、隣
接するｐ型半導体層あるいはｎ型半導体層の５倍以上の
濃度が必要であり、ＩＯないし５０倍にするのが望まし
い。When the impurity is a p-type or dopant, the concentration usually needs to be 5 times or more that of the adjacent p-type semiconductor layer or n-type semiconductor layer, and preferably IO to 50 times.
以下この発明の半導体装置の１実施例として第１図に示
した太陽電池によりその構成を説明する。The structure of the solar cell shown in FIG. 1 will be explained below as an embodiment of the semiconductor device of the present invention.
平行平板容量結合型グロー放電装置を用い、下記条件に
上半導体各層を次の順序でもって成膜形成して有効面積
１ 、０ ａｍ”の太陽電池を作成した。Using a parallel plate capacitively coupled glow discharge device, each upper semiconductor layer was formed in the following order under the following conditions to create a solar cell with an effective area of 1.0 am''.
（作成手順）
ガラス基板（１）／Ｓｎｏｗによる透明電極（２）／厚
さ４０人の高濃度ｎ型半導体層（３）／厚さ１２０人の
ｐ型半導体Ｆｍ＜４’）／厚さ６０人のグレーディング
層（５）／厚さ７００人のｎ型半導体層（６）／厚さ６
０人のｎ型半導体層（７）／厚さ４０人の高濃度ｎ型半
導体層（１３）／厚さ１２０人のｐ型半導体層（１４）
／厚さ６０人のグレーディング層（Ｈ５）／厚さ６００
０人のｎ型半導体層（１６）／厚さ４００人の微結晶化
のｎ型半導体層０７）／裏面電極（８）
（成膜条件）
ｐ型半導体層：
Ｓ：Ｈ４１５０ＳＣＣＭ 、ＯＨ４／３５ＳＣＣＭ 。(Creation procedure) Glass substrate (1) / Transparent electrode by Snow (2) / High concentration n-type semiconductor layer (3) with a thickness of 40 people / P-type semiconductor Fm<4') with a thickness of 120 people / Thickness 60 Human grading layer (5) / Thickness 700 people N-type semiconductor layer (6) / Thickness 6
0 person n-type semiconductor layer (7) / 40 people thick high concentration n-type semiconductor layer (13) / 120 people thick p-type semiconductor layer (14)
/Thickness 60 people grading layer (H5)/Thickness 600
N-type semiconductor layer (16) with a thickness of 400 mm / microcrystalline n-type semiconductor layer 07) with a thickness of 400 mm / back electrode (8) (film formation conditions) p-type semiconductor layer: S: H4150SCCM, OH4/35SCCM.
Ｂ ｔＩ（ｓ（１０００ｐｐｍｌ：ＨｔＴで希釈したも
の）／１００ＳＣＣＭ 、Ｈａ１５００ Ｓ Ｃ，ＣＭ
、 ５０＋Ｗ／ｃｍ”。B tI(s (1000 ppml: diluted with HtT)/100 SCCM, Ha1500 SC, CM
, 50+W/cm”.
１．０トン
ｎ型半導体層：
Ｓ：）１４１５０ Ｓ ＣＣＭ 、５０ｍＷ／ｃｍ”、
１．０ トンｎ型半導体層：
Ｓ：Ｈ４１５０ＳＣＣＭ 、ＰＨ３／１００ＳＣＣＭ
。1.0 ton n-type semiconductor layer: S:) 14150 S CCM, 50 mW/cm",
1.0 ton n-type semiconductor layer: S:H4150SCCM, PH3/100SCCM
.
５０ ｍＷ／ｃｍ”、 １ 、０ トン高濃度ｎ型半導
体層：
Ｓ：Ｈ／１０ＳＣＣＭ 、ＢｘＨｓ１５００ＳＣＣＭ
。50 mW/cm", 1,0 ton high concentration n-type semiconductor layer: S:H/10SCCM, BxHs1500SCCM
.
５０ ａ＋Ｗ／ａｍ”、 Ｉ 、 Ｏトン微結晶化ｎ型
半導体！ｉＪ：
Ｓ：Ｈ／１ ０ＳＣＣＭ 、ＰＨｓ／２００ＳＣＣ
Ｍ 。50 a+W/am”, I, O ton microcrystalline n-type semiconductor!iJ: S:H/10SCCM, PHs/200SCC
M.
Ｈｚ１５００ Ｓ ＣＣＭ 、５００ｍＷ／ｃ＋ａ”、
■、０ トン上記のごとく作成した太陽電池と、比較の
為に、高濃度ｎ型半導体層の形成を行わない従来の太陽
電池とをソーラーシュミレータを用い１０１００ｌ／ｃ
ＩＩｌ″でもって実測した出力特性を次表に示す。Hz1500 S CCM, 500mW/c+a”,
■, 0 tons For comparison, the solar cell produced as described above and a conventional solar cell in which a high concentration n-type semiconductor layer is not formed were tested using a solar simulator at 10,100 l/c.
The output characteristics actually measured with IIl'' are shown in the following table.
実施例 従来例
η ８．４７ ６．３９
Ｖｏｅ １．６４ １．４５Ｊｓｃ（ｍＡ
／ｃｍ２） ７．６１ ７．６ＯＦＦ
６７．８ ５８．０この表よりわかるように、従来例
の太陽電池と実施例による太陽電池は、高照度で充電変
換効率が向上した。Example Conventional example η 8.47 6.39 Voe 1.64 1.45 Jsc (mA
/cm2) 7.61 7.6OFF
67.8 58.0 As can be seen from this table, the conventional solar cell and the solar cell according to the example had improved charging conversion efficiency under high illuminance.
［発明の効果］
以上説明したように、窓側に広バンドギャップ半導体不
純物層を用いた多重接合型太陽電池のｐ−１界面あるい
はｎ−ｉ界面部分にグレーディング層を備えたものに、
更に受光面側に諷濃度ｐ型半道ｔｋ ！ 、かル＋＋
＋−ψシＩ＝）ｈ 恵昭面下でのう１雷穿換効率が向
上する。[Effects of the Invention] As explained above, a multi-junction solar cell using a wide bandgap semiconductor impurity layer on the window side has a grading layer at the p-1 interface or n-i interface,
In addition, there is a p-type half-way tk on the light-receiving surface side! , Cal++
+-ψshiI=)h The efficiency of lightning perforation improves by one more under the Eisho-men.
第１図はこの発明の半導体装置により作成した太陽電池
の１実施例を示す構成図、第２図は、従来の太陽電池の
構成図である。
ｌ・・・ガラス基板、２・・・透明電極、３．１３・・
・高濃度ｎ型半導体層、４．１４・・・ｐ型半導体層、
５．１５・・・グレーディングギャップ層、６．Ｈ６・
・・ｎ型半導体層、７・・・ｎ型半導体層、８・・・裏
面電極、１７・・・微結晶化ｎ型半導体層。FIG. 1 is a block diagram showing one embodiment of a solar cell made using the semiconductor device of the present invention, and FIG. 2 is a block diagram of a conventional solar cell. l...Glass substrate, 2...Transparent electrode, 3.13...
・High concentration n-type semiconductor layer, 4.14...p-type semiconductor layer,
5.15... Grading gap layer, 6. H6・
... n-type semiconductor layer, 7... n-type semiconductor layer, 8... back electrode, 17... microcrystallized n-type semiconductor layer.
Claims (4)
もバンドギャップの広いｐ層あるいはｎ層の不純物層を
有するｐ−ｉ−ｎ型あるいはｎ−ｉ−ｐ型光起電力素子
を多重に接合した非単結晶のシリコン系半導体装置であ
って、少なくとも一つ以上の広バンドギャップ不純物層
の受光面側に、該不純物層と同じ導電型でかつ不純物濃
度の高い高濃度不純物層を設けるとともに、該広バンド
ギャップ層のｐ−ｉあるいはｎ−ｉ界面に、ｐ層からｉ
層あるいはｎ層からｉ層に向かって不純物濃度を減少さ
せてバンドギャップを狭くしたグレーディング層を設け
たことを特徴とする半導体装置。(1) A p-i-n type or n-i-p type photovoltaic element that has a p-layer or n-layer impurity layer on the light-receiving surface side, which has a wider band gap than the i-layer of the intrinsic semiconductor that is the active layer. A non-single-crystal silicon-based semiconductor device in which a high concentration impurity layer having the same conductivity type as the impurity layer and having a high impurity concentration is provided on the light-receiving surface side of at least one wide bandgap impurity layer. and at the p-i or n-i interface of the wide bandgap layer, from the p layer to the i
1. A semiconductor device comprising a grading layer whose impurity concentration is decreased from the n-layer to the i-layer to narrow the bandgap.
る特許請求の範囲第１項に記載の半導体装置。(2) The semiconductor device according to claim 1, wherein the wide bandgap layer is a-SiC:H.
ドープ層の不純物濃度の５ないし５０倍である特許請求
の範囲第１項ないし第２項のいずれかの項に記載の半導
体装置。(3) The semiconductor device according to any one of claims 1 to 2, wherein the impurity concentration of the high concentration impurity layer is 5 to 50 times the impurity concentration of the impurity doped layer.
である特許請求の範囲第１項ないし第３項のいずれかの
項に記載の半導体装置。(4) The thickness of the high concentration impurity layer is 10 to 300 Å
A semiconductor device according to any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62080113A JP2634812B2 (en) | 1987-03-31 | 1987-03-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62080113A JP2634812B2 (en) | 1987-03-31 | 1987-03-31 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63244889A true JPS63244889A (en) | 1988-10-12 |
| JP2634812B2 JP2634812B2 (en) | 1997-07-30 |
Family
ID=13709131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62080113A Expired - Lifetime JP2634812B2 (en) | 1987-03-31 | 1987-03-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2634812B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4419273A1 (en) * | 1994-06-01 | 1996-02-01 | Forschungszentrum Juelich Gmbh | Thin film solar cell and process for its manufacture |
| EP0828301A3 (en) * | 1996-09-05 | 1999-07-14 | Canon Kabushiki Kaisha | Photovoltaic element and method of and apparatus for manufacturing the same |
| TWI483406B (en) * | 2010-05-18 | 2015-05-01 | Au Optronics Corp | Photovoltaic cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5664476A (en) * | 1979-08-30 | 1981-06-01 | Plessey Overseas | Armophous silicon solar battery |
| JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS58106876A (en) * | 1981-12-19 | 1983-06-25 | Tokyo Denki Daigaku | Photoelectric transducer |
| JPS58171869A (en) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS59163876A (en) * | 1983-03-08 | 1984-09-14 | Agency Of Ind Science & Technol | Amorphous silicon solar cell |
-
1987
- 1987-03-31 JP JP62080113A patent/JP2634812B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5664476A (en) * | 1979-08-30 | 1981-06-01 | Plessey Overseas | Armophous silicon solar battery |
| JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS58106876A (en) * | 1981-12-19 | 1983-06-25 | Tokyo Denki Daigaku | Photoelectric transducer |
| JPS58171869A (en) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS59163876A (en) * | 1983-03-08 | 1984-09-14 | Agency Of Ind Science & Technol | Amorphous silicon solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4419273A1 (en) * | 1994-06-01 | 1996-02-01 | Forschungszentrum Juelich Gmbh | Thin film solar cell and process for its manufacture |
| DE4419273C2 (en) * | 1994-06-01 | 1998-11-26 | Forschungszentrum Juelich Gmbh | Thin film solar cell |
| EP0828301A3 (en) * | 1996-09-05 | 1999-07-14 | Canon Kabushiki Kaisha | Photovoltaic element and method of and apparatus for manufacturing the same |
| TWI483406B (en) * | 2010-05-18 | 2015-05-01 | Au Optronics Corp | Photovoltaic cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2634812B2 (en) | 1997-07-30 |
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