JPS59163876A - Amorphous silicon solar cell - Google Patents
Amorphous silicon solar cellInfo
- Publication number
- JPS59163876A JPS59163876A JP58036752A JP3675283A JPS59163876A JP S59163876 A JPS59163876 A JP S59163876A JP 58036752 A JP58036752 A JP 58036752A JP 3675283 A JP3675283 A JP 3675283A JP S59163876 A JPS59163876 A JP S59163876A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- electrode
- added
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 101000995861 Arabidopsis thaliana Regulatory protein NPR1 Proteins 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
（イ）技術分野
本発明は光エネルギーを電気エネルギーに変換するアモ
ルファスシリコン太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field The present invention relates to an amorphous silicon solar cell that converts light energy into electrical energy.
（ロ）背景技術
近年クリーンで非枯褐性のエネルギーヲ利用する低コス
ト太陽電池として、アモルファスシリコン太陽電池が注
目されている。アモルファスシリコン太陽電池は、安価
な基板を用いて低温プロセスで形成する厚さ１μｍ以下
の薄膜で構成できるため、低コストで製造できる特徴が
ある。(b) Background Art In recent years, amorphous silicon solar cells have attracted attention as low-cost solar cells that utilize clean, non-degradable energy. Amorphous silicon solar cells have the characteristic that they can be manufactured at low cost because they can be constructed from thin films with a thickness of 1 μm or less that are formed by low-temperature processes using inexpensive substrates.
このような低コストの特徴を生かすには、より一層の光
電変換効率を向上し、実用に供し得る性能にする必要が
ある。In order to take advantage of such a low cost feature, it is necessary to further improve the photoelectric conversion efficiency and achieve a performance that can be put to practical use.
かい正孔を収集し易いようにｐ型層を光入射側に置いて
光の総合収集効率を高めるようにしている場合が多い。In order to easily collect holes, a p-type layer is often placed on the light incident side to increase the overall light collection efficiency.
この場合、ｐ型層と電極層界面部の電気抵抗を低減する
ことによって、太陽電池の直列抵抗を改善し、光電変換
効率を向上することが期待できる。また、ｐ型層に禁止
帯幅の広い炭素または窒素を添加したアモルファスシリ
コン（以下ａ−３ｉ ：Ｃ：Ｈｉたはａ−３ｉ ：Ｎ：
Ｈと記す）を用いることによってｐ型層における光吸収
を少なくシ、アモルファスシリコン太陽電池において有
効なキヤ合構造太陽電池において、ｐ型層の電極に接す
る領域の電導塵をｉ型層に接する領域より低くすること
により、太陽電池の直列抵抗を低減して曲線因子を改善
し、光電変換効率を向上させ得ることを見い出し本発明
を完成させたものである。In this case, by reducing the electrical resistance at the interface between the p-type layer and the electrode layer, it is expected that the series resistance of the solar cell will be improved and the photoelectric conversion efficiency will be improved. In addition, amorphous silicon (hereinafter referred to as a-3i:C:Hi or a-3i:N:
In a composite structure solar cell, which is effective in amorphous silicon solar cells, the conductive dust in the region in contact with the electrode of the p-type layer is reduced by reducing the light absorption in the p-type layer, and the conductive dust in the region in contact with the electrode of the p-type layer is reduced in the region in contact with the i-type layer. We have completed the present invention by discovering that by lowering the resistance, the series resistance of the solar cell can be reduced, the fill factor can be improved, and the photoelectric conversion efficiency can be improved.
以下、ｐ型層にａ−５ｉ ：Ｃ：Ｈ膜を用いた実施例に
は透明導電膜、８はアモルファスシリコン層で基板側か
ら伝導型がｐ型（４）、ｉ型（５）、ｎ型（６）の順に
ｐＩ層（７）および０２層（８）からなり、基板側に近
いＰＩＪ’ｌ （７）へのボロンまたはアルミニウムの
如’ｌ 第１１１ａ族元素の添加量がｐ２ 層（８）
への添加量より多くなっている。各層の膜厚は例えば、
２１層８０久、ｐ、。In the following, examples using a-5i:C:H film as the p-type layer include a transparent conductive film, 8 is an amorphous silicon layer, and the conductivity types are p-type (4), i-type (5), n-type from the substrate side. The type (6) consists of a pI layer (7) and a 02 layer (8) in this order, and the addition amount of group 111a elements such as boron or aluminum to the PIJ'l (7) near the substrate side is the p2 layer ( 8)
The amount added to The thickness of each layer is, for example,
21 layers 80 kyu, p.
層１５０Ａでｉ型層、ｎ型層はそれぞれ５０００久、５
００Ａである。９は金属電極であり、膜厚５０００Ａの
アルミニウムを用いた。１０は入射する太陽光線を示す
。In the layer 150A, the i-type layer and the n-type layer are 5,000 years old and 5,000 years old, respectively.
It is 00A. Reference numeral 9 denotes a metal electrode made of aluminum with a film thickness of 5000 Å. 10 indicates incident sunlight.
第２図は従来の構造例であり、ｐ層は一層である。第１
表はｐ ＷＪに炭素及びボロンを添加したアモルファス
シリコン層を用いた太陽電池の出力特性を、また第２表
はｐ層に窒素を添加したアモルファスシリコン層を用い
た太陽電池の出力特性を示す。炭素または窒素はそれぞ
れ膜中に３０ａｔ％含まれ、合金化している。ｐ型層の
電極に接する領域に、ｉ型層に接する領域上り高濃度の
ボロンを添加した場合に曲線因子が著しく改善され、光
電変換効率の向」二がはかられていることが明らかであ
る。FIG. 2 shows an example of a conventional structure, in which the p-layer is one layer. 1st
The table shows the output characteristics of a solar cell using an amorphous silicon layer in which carbon and boron are added to the p WJ, and Table 2 shows the output characteristics of a solar cell using an amorphous silicon layer in which nitrogen is added to the p layer. Carbon and nitrogen are each contained in the film at 30 at% and are alloyed. It is clear that when a high concentration of boron is added to the region in contact with the electrode of the p-type layer and the region in contact with the i-type layer, the fill factor is significantly improved and the photoelectric conversion efficiency is improved. be.
ｐ型層に炭素または窒素のうちの少なくとも１めである
。At least one of carbon and nitrogen is added to the p-type layer.
禁止帯幅は炭素または窒素の添加量を増すほど広くでき
、ｐ型層における光吸収を低減することができる。また
、ｐ型層と電極との接合面における電気抵抗にもとづく
太陽電池の直列抵抗を減少するために、ボロンまたはア
ルミニウムの如き第１［１ａ 族元素の添加量を増大
することができる。しかし、ボロンまたはアルミニウム
の如き第１１１ａ 族元素の添加量を増大するほど禁止
帯幅が狭められ、ｐ型層における光吸収が大きくなる。The forbidden band width can be increased as the amount of carbon or nitrogen added is increased, and light absorption in the p-type layer can be reduced. Furthermore, in order to reduce the series resistance of the solar cell based on the electrical resistance at the junction between the p-type layer and the electrode, the amount of Group 1 [1a elements such as boron or aluminum added can be increased. However, as the amount of Group 111a elements such as boron or aluminum added increases, the forbidden band width becomes narrower and light absorption in the p-type layer increases.
この結果、光電変換効率の低下をきたしてしまう。ｐ型
層の電極に接する領域の電導塵をｉ型層に接する領域よ
り低くするのは、上記の問題点を解決するために、ｐ型
層を禁止帯幅は比較的狭い５−
が電導塵が高く、電極との接合に適したｐＩ 層と、
禁止帯幅が広く、光吸収の少ないｐ２ 層に分割する
ためである。As a result, photoelectric conversion efficiency decreases. In order to solve the above problem, the conductive dust in the region of the p-type layer in contact with the electrode is made lower than that in the region in contact with the i-type layer. a pI layer that has a high pI layer and is suitable for bonding with an electrode;
This is because it is divided into a p2 layer which has a wide bandgap and little light absorption.
Ｐｌ 層の膜厚は５０〜１５０′にであることがのぞ
ましい。膜厚が５０λに満たないと、均質なｐｌ 層
が得られず、所望の良好な電極との接合効果が得られな
いためであり、１５０Ｘを越えると、２１層で光吸収量
が多くなるからである。The thickness of the Pl layer is preferably 50 to 150'. This is because if the film thickness is less than 50λ, a homogeneous PL layer cannot be obtained and the desired good bonding effect with the electrode cannot be obtained, and if it exceeds 150X, the amount of light absorption increases with 21 layers. It is.
実施例では、ｐ型層が電導塵の高い２１層と、禁止帯幅
の広いｐ２ 層の２層からなる場合について述べたが
、必要な場合は３層以上にすることも可能であり、ボロ
ンまたはアルミニウム等の第１ｎａ族元素の添加量を連
続的に変化させ、ｐ型層の電極に接する領域の電導塵を
ｉ型層に接する領域より高くしてもよい。In the example, a case was described in which the p-type layer consists of two layers: the 21 layer with high conductivity dust and the p2 layer with a wide forbidden band width, but if necessary, it is possible to have three or more layers. Alternatively, the amount of addition of the first NA group element such as aluminum may be continuously changed to make the conductive dust in the region of the p-type layer in contact with the electrode higher than in the region in contact with the i-type layer.
本発明はｉ型層の組成や、多層構造における電極に接触
しないアモルファスシリコン層を制限するものではなく
、ｐ型層を含むいずれの構造にも適用できる。The present invention does not limit the composition of the i-type layer or the amorphous silicon layer that does not contact the electrode in a multilayer structure, and can be applied to any structure including a p-type layer.
第１表
（照射光： ＡＭ−１（］ ＯＯｍＭ／Ｃ１ｎ２） ）
第２表
（照射光： ＡＭ−１（１００ｍｘ／ｍ”） ）Table 1 (Irradiation light: AM-1(]OOmM/C1n2))
Table 2 (Irradiation light: AM-1 (100mx/m”))
第１図は本発明によるａ−３ｉ 太陽電池の一実施例
を示す断面図である。第２図は従来例である。
１；透明ガラス基板、２；透明導電膜、３；アモルファ
スシリコンＮ、４ ｊ ｐ型ｌ、５ ； ｉ型ｌ、６Ｈ
ｎ型層、’７ｉｐ１層、８；９２層、９；金属電極、１
０．太陽光線。
特許出願人 工業技術院長
石板域−
才１シ
ー」
才２図
□
４１３−
Ｌ′
フ
ｒ。FIG. 1 is a sectional view showing one embodiment of an a-3i solar cell according to the present invention. FIG. 2 shows a conventional example. 1; Transparent glass substrate, 2; Transparent conductive film, 3; Amorphous silicon N, 4 j p-type l, 5; i-type l, 6H
n-type layer, '7ip1 layer, 8; 92 layers, 9; metal electrode, 1
0. Sun rays. Patent Applicant: Agency of Industrial Science and Technology, Director of the Board of Directors - Sai1 Sea'' Sai2 Figure □ 413-L' Fr.
Claims (1)
いて、ｐ型層を構成するボロン、アルミニウムの如きｍ
ｂ 族元素のうちの少なくとも１種以上において、ｐ
型層にボロン、アルミニウムの如きＩＵｂ 族元素の
少くとも１種および炭素、窒素の少くとも１種含有し、
その濃度がｉ型層に接する領域より電極に接する領域で
高くして電導度を高くしてなることを特徴とするアモル
ファスシリコン太陽電池。(1) In an amorphous silicon solar cell containing a p-type layer, molar substances such as boron and aluminum constituting the p-type layer
In at least one or more of the group b elements, p
The mold layer contains at least one IUb group element such as boron and aluminum, and at least one of carbon and nitrogen,
An amorphous silicon solar cell characterized in that its concentration is higher in a region in contact with an electrode than in a region in contact with an i-type layer, thereby increasing conductivity.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58036752A JPS59163876A (en) | 1983-03-08 | 1983-03-08 | Amorphous silicon solar cell |
| GB08405687A GB2137810B (en) | 1983-03-08 | 1984-03-05 | A solar cell of amorphous silicon |
| DE3408317A DE3408317C2 (en) | 1983-03-08 | 1984-03-07 | Amorphous silicon solar cell |
| US06/587,702 US4612559A (en) | 1983-03-08 | 1984-03-08 | Solar cell of amorphous silicon |
| FR848403598A FR2542503B1 (en) | 1983-03-08 | 1984-03-08 | AMORPHOUS SILICON SOLAR CELL |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58036752A JPS59163876A (en) | 1983-03-08 | 1983-03-08 | Amorphous silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59163876A true JPS59163876A (en) | 1984-09-14 |
Family
ID=12478463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58036752A Pending JPS59163876A (en) | 1983-03-08 | 1983-03-08 | Amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59163876A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62256481A (en) * | 1986-04-30 | 1987-11-09 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
| JPS63244889A (en) * | 1987-03-31 | 1988-10-12 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
| JPS63244888A (en) * | 1987-03-31 | 1988-10-12 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS5760875A (en) * | 1980-09-25 | 1982-04-13 | Sharp Corp | Photoelectric conversion element |
-
1983
- 1983-03-08 JP JP58036752A patent/JPS59163876A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS5760875A (en) * | 1980-09-25 | 1982-04-13 | Sharp Corp | Photoelectric conversion element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62256481A (en) * | 1986-04-30 | 1987-11-09 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
| JPS63244889A (en) * | 1987-03-31 | 1988-10-12 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
| JPS63244888A (en) * | 1987-03-31 | 1988-10-12 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
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