JPS6143869B2 - - Google Patents
Info
- Publication number
- JPS6143869B2 JPS6143869B2 JP55073843A JP7384380A JPS6143869B2 JP S6143869 B2 JPS6143869 B2 JP S6143869B2 JP 55073843 A JP55073843 A JP 55073843A JP 7384380 A JP7384380 A JP 7384380A JP S6143869 B2 JPS6143869 B2 JP S6143869B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous silicon
- hydrogen
- fluorine
- containing amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 229910052731 fluorine Inorganic materials 0.000 claims description 16
- 239000011737 fluorine Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 150000002431 hydrogen Chemical class 0.000 claims description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 239000007789 gas Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
【発明の詳細な説明】
本発明は、非晶質シリコンを用いた太陽電池に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solar cell using amorphous silicon.
非晶質シリコンを用いた太陽電池は低価格であ
るためエネルギー問題解決の一翼として期待され
ている。従来太陽電池のための非晶質シリコンと
しては水素含有のものが用いられていた。水素は
非晶質シリコン中のキヤリヤのトラツプとして働
く構造欠陥であるダイグリングボンドと結合して
これを補償する。しかし水素のほかに弗素を添加
すると弗素が残つたダイグリングボンドをさらに
補償するため一層トラツプが減少し、これを用い
た太陽電池は例えば開放電圧が高くなるなどその
光電特性が向上する。しかしこの水素弗素含有非
晶質シリコンは金属基板あるいは透明導電膜を備
えたガラス基板への密着性がよくない欠点があ
る。 Solar cells using amorphous silicon are expected to play a role in solving energy problems because of their low cost. Conventionally, hydrogen-containing amorphous silicon has been used for solar cells. Hydrogen compensates by bonding with the digling bonds, which are structural defects that act as carrier traps in amorphous silicon. However, when fluorine is added in addition to hydrogen, traps are further reduced because the fluorine further compensates for the remaining digling bonds, and solar cells using this material improve their photoelectric properties, for example, by increasing their open-circuit voltage. However, this hydrogen fluorine-containing amorphous silicon has the disadvantage of poor adhesion to metal substrates or glass substrates provided with transparent conductive films.
本発明はこの密着性のよくない不利を解消して
水素弗素含有非晶質シリコンを用いた太陽電池を
提供することを目的とする。 The object of the present invention is to eliminate this disadvantage of poor adhesion and provide a solar cell using hydrogen-fluorine-containing amorphous silicon.
この目的はpin構造を基本単位とする太陽電池
の該単位を水素弗素含有非晶質シリコンから構成
するとともに、この層と導電性基板との間に、基
板に面する水素含有非晶質シリコン層を設けるこ
とによつて達成できる。 This purpose is to construct a solar cell having a pin structure as a basic unit from hydrogen-fluorine-containing amorphous silicon, and to provide a hydrogen-containing amorphous silicon layer facing the substrate between this layer and a conductive substrate. This can be achieved by providing
以下図面を用いて本発明の実施例について説明
する。第１図において、表面平滑なステンレス鋼
基板１の上に、ｎ形非晶質シリコン層２が設けら
れている。ｎ形非晶質層２はSiH4・H2およびpH3
を混合したガスをグロー放電により分解して成長
させたもので、水素含有非晶質シリコン層であ
る。ついでSiH4ガスをSiH4ガスに切り換えてｎ
形の水素弗素含有非晶質シリコン層３を層２の上
に成長させ、この層３の上にSiH4とH2の混合ガ
スから水素弗素含有非晶質シリコンのｉ層４を、
さらにB2H6ガスを混合してｐ形水素弗素含有シ
リコン層５を形成する。これによつて水素弗素含
有非晶質層のpin接合構造が形成され、特性の良
好な光電変換活性領域が得られる。ｐ層５の側か
ら入射してｉ層内の空乏層に到達しした光により
生ずる光起電力は、基板１およびｐ層５の上に被
着された格子電極６から取出される。第２図はガ
ラス基板を用いた実施例であり、ガラス基板７の
上にITO（インジウム，すず酸化物）あるいは
SnO2からなる透明導電層８を被着し、その上に
SiH4，H2およびB2H6の混合ガスからｐ形の水素
含有非晶質シリコン層９を成長させ、ついでその
上に第１図の場合と同様なガスを用いて第１図と
逆の順に水素弗素含有の非晶質シリコン層のｐ層
５、ｉ層４、ｎ層３を順次成長させる。さらにそ
の上にＡまたはAgの電極１０を被着する。こ
の太陽電池においては、ガラス基板７の側から入
射した光がpin接合によつてｉ層４内に生ずる空
乏層に到達して光起電力を生じ、この光起電力は
透明導電膜８および金属電極１０から取出され
る。 Embodiments of the present invention will be described below with reference to the drawings. In FIG. 1, an n-type amorphous silicon layer 2 is provided on a stainless steel substrate 1 with a smooth surface. N-type amorphous layer 2 is SiH 4 H 2 and pH 3
It is a hydrogen-containing amorphous silicon layer grown by decomposing a gas mixture by glow discharge. Next, switch the SiH 4 gas to SiH 4 gas and
A hydrogen fluorine - containing amorphous silicon layer 3 of the form
Furthermore, B 2 H 6 gas is mixed to form a p-type hydrogen fluorine-containing silicon layer 5 . As a result, a pin junction structure of the hydrogen fluorine-containing amorphous layer is formed, and a photoelectric conversion active region with good characteristics is obtained. The photovoltaic force generated by the light incident from the side of the p-layer 5 and reaching the depletion layer in the i-layer is extracted from the grid electrode 6 deposited on the substrate 1 and the p-layer 5 . Figure 2 shows an example using a glass substrate, in which ITO (indium, tin oxide) or
A transparent conductive layer 8 made of SnO 2 is deposited on top of it.
A p-type hydrogen-containing amorphous silicon layer 9 is grown from a mixed gas of SiH 4 , H 2 and B 2 H 6 , and then the same gas as in FIG. A p layer 5, an i layer 4, and an n layer 3 of an amorphous silicon layer containing hydrogen fluorine are grown in this order. Furthermore, an electrode 10 of A or Ag is deposited thereon. In this solar cell, light incident from the side of the glass substrate 7 reaches the depletion layer formed in the i-layer 4 due to the pin junction and generates a photovoltaic force, and this photovoltaic force is transferred to the transparent conductive film 8 and the metal It is taken out from the electrode 10.
以上説明したように、本発明は金属基板あるい
はガラス基板上の導電膜に密着性のよくない水素
弗素含有非晶質シリコンを直接基板上に成長させ
ないで、それらに対して良好な密着性を示す水素
含有非晶質シリコン層を介して積層するものであ
り、これによつて水素弗素含有非晶質シリコン層
からなる活性領域を有する太陽電池が使用中に層
のはがれるおそれのない安定な形で得ることがで
きる。しかも、活性領域を構成するｐ，ｉ，ｎ層
が全て同一材料からなることにより、接合内部に
おける電荷の再結合中心が少なく抑えられ、接合
特性が向上し、変換効率が増大する。 As explained above, the present invention exhibits good adhesion to conductive films on metal substrates or glass substrates without growing hydrogen-fluorine-containing amorphous silicon, which does not have good adhesion, directly on the substrate. The solar cell is stacked with hydrogen-containing amorphous silicon layers interposed therebetween, so that a solar cell with an active region made of a hydrogen-fluorine-containing amorphous silicon layer can be formed in a stable manner without the risk of the layers peeling off during use. Obtainable. Moreover, since the p, i, and n layers constituting the active region are all made of the same material, the number of charge recombination centers within the junction is suppressed to a small number, improving junction characteristics and increasing conversion efficiency.
第１図および第２図はそれぞれ本発明に基づく
太陽電池の異なる実施例の構造を示す断面図であ
る。
１……金属基板、２……水素含有非晶質シリコ
ンｎ層、３……水素弗素含有非晶質シリコンｎ
層、４……水素弗素含有非晶質シリコンｉ層、５
……水素弗素含有非晶質シリコンｐ層、７……ガ
ラス基板、８……透明導電膜、９……水素含有非
晶質シリコンｐ層。
1 and 2 are cross-sectional views showing the structures of different embodiments of solar cells according to the present invention, respectively. 1...Metal substrate, 2...Hydrogen-containing amorphous silicon n layer, 3...Hydrogen-fluorine containing amorphous silicon n
Layer, 4...Hydrogen fluorine-containing amorphous silicon i-layer, 5
...Hydrogen-fluorine-containing amorphous silicon p-layer, 7...Glass substrate, 8...Transparent conductive film, 9...Hydrogen-containing amorphous silicon p-layer.
Claims (1)
陽電池において、前記基本単位は水素弗素含有非
晶質シリコン層からなり、該層と導電性基板との
間に、基板に面する水素弗素含有非晶質シリコン
層と同一導電形の水素含有非晶質シリコン層が介
介在することを特徴とする太陽電池。In an amorphous silicon solar cell having a 1-pin structure as a basic unit, the basic unit consists of a hydrogen fluorine-containing amorphous silicon layer, and a hydrogen fluorine-containing non-crystalline silicon layer facing the substrate is provided between the layer and a conductive substrate. A solar cell characterized in that a hydrogen-containing amorphous silicon layer of the same conductivity type as a crystalline silicon layer is interposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7384380A JPS571262A (en) | 1980-06-02 | 1980-06-02 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7384380A JPS571262A (en) | 1980-06-02 | 1980-06-02 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS571262A JPS571262A (en) | 1982-01-06 |
| JPS6143869B2 true JPS6143869B2 (en) | 1986-09-30 |
Family
ID=13529819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7384380A Granted JPS571262A (en) | 1980-06-02 | 1980-06-02 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS571262A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58155774A (en) * | 1982-03-11 | 1983-09-16 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JPS5954273A (en) * | 1982-09-21 | 1984-03-29 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| JPS5954276A (en) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS5983916A (en) * | 1982-11-01 | 1984-05-15 | Kanegafuchi Chem Ind Co Ltd | Amorphous multielement semiconductor |
| JPS59149149A (en) * | 1983-02-17 | 1984-08-27 | テルモ株式会社 | Urine amount measuring apparatus |
-
1980
- 1980-06-02 JP JP7384380A patent/JPS571262A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS571262A (en) | 1982-01-06 |
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