JPS571262A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS571262A
JPS571262A JP7384380A JP7384380A JPS571262A JP S571262 A JPS571262 A JP S571262A JP 7384380 A JP7384380 A JP 7384380A JP 7384380 A JP7384380 A JP 7384380A JP S571262 A JPS571262 A JP S571262A
Authority
JP
Japan
Prior art keywords
layer
amorphous
sif4
sih4
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7384380A
Other languages
Japanese (ja)
Other versions
JPS6143869B2 (en
Inventor
Takeshige Ichimura
Osamu Nabeta
Yoshiyuki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP7384380A priority Critical patent/JPS571262A/en
Publication of JPS571262A publication Critical patent/JPS571262A/en
Publication of JPS6143869B2 publication Critical patent/JPS6143869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent separation of layers during the operation by layering amorphous Si containing H and amorphours Si containing H and F on a conductive substrate. CONSTITUTION:On a stainless steel plate 1, an N type amorphous layer 2 is formed by the glow discharge of SiH4+H2+PH3. Then SiH4 is changed to SiF4, and an N type amorphous Si layer 3 containing H and F is provided. Thereafter an I layer 4 is formed by SiF4+H2. Subsequently, B2H6 is mixed, and a P type Si layer 5 containing H and F is formed. Thus a PIN junction structure is formed, and an active photoelectric conversion layer having exellent characteristics can be obtained. A grid electrode 6 is formed on the P layer 5. Since the amorphous Si layers containing H and having excellent bonding property are provided on the substrate, the separation of the layers during the operation is not caused, and the stable device can be obtained.
JP7384380A 1980-06-02 1980-06-02 Solar cell Granted JPS571262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7384380A JPS571262A (en) 1980-06-02 1980-06-02 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7384380A JPS571262A (en) 1980-06-02 1980-06-02 Solar cell

Publications (2)

Publication Number Publication Date
JPS571262A true JPS571262A (en) 1982-01-06
JPS6143869B2 JPS6143869B2 (en) 1986-09-30

Family

ID=13529819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7384380A Granted JPS571262A (en) 1980-06-02 1980-06-02 Solar cell

Country Status (1)

Country Link
JP (1) JPS571262A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155774A (en) * 1982-03-11 1983-09-16 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5954276A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device
JPS5954273A (en) * 1982-09-21 1984-03-29 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS5983916A (en) * 1982-11-01 1984-05-15 Kanegafuchi Chem Ind Co Ltd Amorphous multielement semiconductor
JPS59149149A (en) * 1983-02-17 1984-08-27 テルモ株式会社 Urine amount measuring apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155774A (en) * 1982-03-11 1983-09-16 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH0432552B2 (en) * 1982-03-11 1992-05-29
JPS5954273A (en) * 1982-09-21 1984-03-29 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS5954276A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device
JPS5983916A (en) * 1982-11-01 1984-05-15 Kanegafuchi Chem Ind Co Ltd Amorphous multielement semiconductor
JPS59149149A (en) * 1983-02-17 1984-08-27 テルモ株式会社 Urine amount measuring apparatus
JPH0155011B2 (en) * 1983-02-17 1989-11-22 Terumo Corp

Also Published As

Publication number Publication date
JPS6143869B2 (en) 1986-09-30

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