JPH04127580A - Multi-junction type amorphous silicon solar cell - Google Patents
Multi-junction type amorphous silicon solar cellInfo
- Publication number
- JPH04127580A JPH04127580A JP2247141A JP24714190A JPH04127580A JP H04127580 A JPH04127580 A JP H04127580A JP 2247141 A JP2247141 A JP 2247141A JP 24714190 A JP24714190 A JP 24714190A JP H04127580 A JPH04127580 A JP H04127580A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- amorphous silicon
- layer
- cell
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010408 film Substances 0.000 claims description 43
- 230000035945 sensitivity Effects 0.000 claims description 13
- 230000003595 spectral effect Effects 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 4
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、短絡電流密度と曲線因子の高い光電変換特性
に優れた多接合型アモルファスシリコン系太陽電池に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a multijunction type amorphous silicon solar cell having excellent photoelectric conversion characteristics with high short circuit current density and fill factor.
従来の多接合型アモルファスシリコン系太陽電池は、特
開昭６１−２５１１７号公報に記載のように、複数個の
ｐｉｎ接合セルを単に積層した構造のものである。A conventional multijunction type amorphous silicon solar cell has a structure in which a plurality of pin junction cells are simply stacked, as described in Japanese Patent Application Laid-Open No. 61-25117.
他方、ｐｉｎ接合セルとｐｉｎ接合セルの間に透光性の
金属薄膜、酸化物、フッ化物、窒化物のいずれかを形成
し、ｎｐ接合のオーミック特性を向上させた多接合型（
多層構造）のアモルファスシリコン系太陽電池が特開昭
６０−１４０４４１号公報において提案されている。On the other hand, there are multi-junction types (in which the ohmic characteristics of the np junction are improved by forming a transparent metal thin film, oxide, fluoride, or nitride between the pin junction cells).
An amorphous silicon solar cell with a multilayer structure has been proposed in Japanese Patent Laid-Open No. 140441/1983.
上述した従来の多接合型のアモルファスシリコン系太陽
電池の光電流の分光感度特性を第４図に示す。図におい
て、光入射側から第１接合セル、第２接合セル、第３接
合セルと呼び、各接合セルの分光感度特性を示している
。第４図において。FIG. 4 shows the spectral sensitivity characteristics of the photocurrent of the conventional multi-junction type amorphous silicon solar cell described above. In the figure, the cells are called a first junction cell, a second junction cell, and a third junction cell from the light incident side, and the spectral sensitivity characteristics of each junction cell are shown. In Fig. 4.
第１接合セルの分光感度が、長波長側でなだらかに減少
している理由は次のとおりであると考えられる。すなわ
ち、多接合型のアモルファスシリコン系太陽電池では各
接合セルの出力電流が同じになるように、第１接合セル
の１層膜厚は薄く（１０００Å以下）設定されている。The reason why the spectral sensitivity of the first junction cell gradually decreases on the longer wavelength side is considered to be as follows. That is, in a multijunction type amorphous silicon solar cell, the thickness of one layer of the first junction cell is set to be thin (1000 Å or less) so that the output current of each junction cell is the same.
したがって、第１接合セルでは入射光が充分吸収されな
いために、その分光感度は長波長領域において漸減する
。Therefore, since the first junction cell does not absorb enough incident light, its spectral sensitivity gradually decreases in the long wavelength region.
この吸収しきれない光が第２接合セルで吸収され光電変
換される。上記の吸収しきれない光は、第１接合セルに
おいても第２接合セルにおいても中途半端に吸収される
ため、この波長領域光に対する光電変換効率は他の波長
領域の光に対する光電変換効率よりも悪くなっている。This light that cannot be absorbed is absorbed by the second junction cell and photoelectrically converted. The above-mentioned light that cannot be absorbed is absorbed halfway in both the first junction cell and the second junction cell, so the photoelectric conversion efficiency for light in this wavelength range is higher than the photoelectric conversion efficiency for light in other wavelength ranges. It's getting worse.
なお、セル特性としては曲線因子が悪くなる。そして、
第２接合セルの長波長側分光感度も、第１接合セル程で
はないがなだらかに減少し、第２接合セルと第３接合セ
ルの間においても上記第１接合セル／第２接合セル間と
同様の現象が生じる。Note that, as a cell characteristic, the fill factor becomes worse. and,
The long wavelength side spectral sensitivity of the second junction cell also decreases gradually, although not as much as the first junction cell, and between the second junction cell and the third junction cell, it also decreases between the first junction cell and the second junction cell. A similar phenomenon occurs.
また、上記従来技術における多接合型アモルファスシリ
コン系太陽電池に設けられている金属薄膜等は、ｎｐ接
合のオーミック特性を良くするためのもので、単なる導
電性の光透過膜であり、この場合においても上記の分光
感度特性低下の問題は残る。In addition, the metal thin film etc. provided in the multi-junction type amorphous silicon solar cell in the above-mentioned conventional technology are intended to improve the ohmic characteristics of the np junction, and are simply a conductive light-transmitting film. However, the above-mentioned problem of decreased spectral sensitivity characteristics remains.
本発明の目的は、上記従来技術における問題点を解決し
、短絡電流密度と曲線因子が高く、光電変換効率に優れ
た多接合型アモルファスシリコン系太陽電池を提供する
ことにある。An object of the present invention is to solve the problems in the prior art described above, and to provide a multijunction amorphous silicon solar cell that has a high short-circuit current density and a high fill factor, and has excellent photoelectric conversion efficiency.
上記本発明の目的を達成するために、多接合型アモルフ
ァスシリコン系太陽電池を構成する第１接合セルと第２
接合セルとの間に、第１接合セルの分光感度が漸減して
いる長波長側の波長領域内の特定波長より短波長の光の
みを反射する中間層を形成する。また、接合セルの数が
３個以上の時は、第２接合セルと第３接合セルとの間に
も、第２接合セルの分光感度が漸減している長波長側の
波長領域内の特定波長より短波長の光のみを反射する中
間層を形成する。この中間層は金属の酸化膜、窒化膜の
うちの少なくとも１種からなる中間層であることが好ま
しい、また、上記中間層はＰ、ｉ、ｎ各層よりも屈折率
の小さい金属の酸化物、窒化物、フッ化物のうちの少な
くとも１種からなる中間層であってもよい。さらに、上
記中間層は導電性光透過膜と絶縁性膜との積層膜であっ
てもよい。また、本発明の多接合型アモルファスシリコ
ン系太陽電池を構成する各ｐｉｎ接合セルは、アモルフ
ァスシリコンおよびアモルファスシリコンゲルマニウム
からなることが好ましい。In order to achieve the above object of the present invention, a first junction cell and a second junction cell constituting a multijunction type amorphous silicon solar cell are used.
An intermediate layer is formed between the first junction cell and the intermediate layer that reflects only light having a wavelength shorter than a specific wavelength within a wavelength region on the long wavelength side in which the spectral sensitivity of the first junction cell gradually decreases. In addition, when the number of junction cells is three or more, a specific wavelength region on the long wavelength side where the spectral sensitivity of the second junction cell gradually decreases is also located between the second junction cell and the third junction cell. An intermediate layer is formed that reflects only light with a shorter wavelength. This intermediate layer is preferably an intermediate layer made of at least one of a metal oxide film and a nitride film, and the intermediate layer is made of a metal oxide having a refractive index lower than that of each of the P, i, and n layers. The intermediate layer may be made of at least one of nitrides and fluorides. Furthermore, the intermediate layer may be a laminated film of a conductive light-transmitting film and an insulating film. Furthermore, each pin junction cell constituting the multijunction amorphous silicon solar cell of the present invention is preferably made of amorphous silicon and amorphous silicon germanium.
本発明の多接合型アモルファスシリコン系太陽電池を構
成する各接合セルの間に設けた中間層により、特定波長
より短波長の光は、第１接合セルにおいて充分に吸収さ
れ、上記波長より長波長の光は第２接合セルで吸収され
て効率よく光電変換される。また、第２接合セルと第３
接合セルの間においても、上記と類似の膜からなる中間
層を形成することにより上記同様の作用が生じる。した
がって、第１接合セルと第２接合セルおよび第２接合セ
ルと第３接合セルの長波長側分光感度特性は、従来の多
接合型アモルファスシリコン系太陽電池の分光感度特性
よりも急峻となると同時に、分光感度がクロスする波長
領域光下のセル特性、特に曲線因子が向上し、光電変換
効率の高い多接合型アモルファスシリコン系太陽電池が
得られる。Due to the intermediate layer provided between each junction cell constituting the multijunction type amorphous silicon solar cell of the present invention, light having a wavelength shorter than a specific wavelength is sufficiently absorbed in the first junction cell, and light having a wavelength longer than the above wavelength is sufficiently absorbed by the first junction cell. The light is absorbed by the second junction cell and efficiently converted into electricity. In addition, the second junction cell and the third
The same effect as described above occurs between the junction cells by forming an intermediate layer made of a film similar to that described above. Therefore, the long wavelength side spectral sensitivity characteristics of the first junction cell and the second junction cell and the second junction cell and the third junction cell are steeper than the spectral sensitivity characteristics of the conventional multijunction type amorphous silicon solar cell. , the cell characteristics under light in the wavelength range where the spectral sensitivities cross, especially the fill factor, are improved, and a multijunction amorphous silicon solar cell with high photoelectric conversion efficiency can be obtained.
以下、本発明の一実施例を挙げ、図面を用いてさらに詳
細に説明する。Hereinafter, one embodiment of the present invention will be described in more detail with reference to the drawings.
（実施例 １）
第１図に、本実施例において作製した多接合型アモルフ
ァスシリコン系太陽電池の構成を示す。(Example 1) FIG. 1 shows the structure of a multijunction type amorphous silicon solar cell produced in this example.
図に示すごとく、まず、ガラス基板１上に、８０００人
のＳｎＯ，透明電極２を形成し、この上にプラズマＣＶ
Ｄ法を用い基板温度２５０℃で第１接合セルを形成する
。まずＢ２Ｈ，ガスとＳ ｉ Ｈ，ガスとを混合したガ
スを用いて、Ｂドープ水素化アモルファスシリコンカー
バイドｐ層３、次に、ＳｉＨ，ガスを用いてノンドープ
水素化アモルファスシリコ２１層４、さらに、ＰＨ，ガ
スとＳｉＨ４ガスとを混合したガスを用いて、Ｐドープ
水素化微結晶シリコンｎ層５を形成する。各層の厚さは
、２層１００人、１層６００人、ｎ層ｌＯＱ程度度とす
る。この全面に、基板温度１５０〜２５０℃の範囲内で
真空蒸着法にてｓｂドープＳｎＯ，膜６を１００人の厚
さ形成する。As shown in the figure, first, 8,000 SnO transparent electrodes 2 are formed on a glass substrate 1, and then a plasma CV
A first junction cell is formed using method D at a substrate temperature of 250°C. First, a B-doped hydrogenated amorphous silicon carbide p layer 3 is formed using a mixture of B2H gas and SiH gas, then a non-doped hydrogenated amorphous silicon 21 layer 4 is formed using SiH gas, and A P-doped hydrogenated microcrystalline silicon n layer 5 is formed using a mixture of PH gas and SiH4 gas. The thickness of each layer is approximately 100 people for 2 layers, 600 people for 1 layer, and 10Q for the n layer. On this entire surface, an sb-doped SnO film 6 is formed to a thickness of 100 nm by vacuum evaporation at a substrate temperature of 150 to 250°C.
この上に、５０μｍ間隔のストライプ状のＴａ、Ｏ，膜
７を形成する８次に、第２接合セルとして、第１接合セ
ル同様に、Ｂドープ水素化微結晶シリコンｐ層８．ノン
ドープ水素化アモルファスシリコ２１層４、Ｐドープ水
素化微結晶シリコンｎ層５を形成する。各層の厚さは、
２層１００人、１層１８００人、ｎ層１００程度度とす
る。On top of this, a striped Ta, O, film 7 with a spacing of 50 μm is formed as a second junction cell, and a B-doped hydrogenated microcrystalline silicon p layer 8. A non-doped hydrogenated amorphous silicon 21 layer 4 and a P-doped hydrogenated microcrystalline silicon n layer 5 are formed. The thickness of each layer is
There will be 100 people in the second layer, 1,800 people in the first layer, and about 100 people in the n layer.
この全面に、ｓｂドープＳｎＯ，膜６と膜厚５０人のノ
ンドープ窒化シリコン膜１２を形成する。On this entire surface, an sb-doped SnO film 6 and a non-doped silicon nitride film 12 with a thickness of 50 mm are formed.
さらに、この上に第３接合セルとしてＢドープ水素化微
結晶シリコンｐ層８、ノンドープ水素化アモルファスシ
リコンゲルマニウム（ａ−８ｉＧｅ：Ｈ）１層１４、Ｐ
ドープ水素化微結晶シリコンｎ層５を順次形成する。ノ
ンドープ水素化アモルファスシリコンゲルマニウムｉ層
１４は、ＳｉＨ４ガスとＧｅＨ，ガスを混合したガスを
用いて形成する。Further, on top of this, as a third junction cell, a B-doped hydrogenated microcrystalline silicon p layer 8, a non-doped hydrogenated amorphous silicon germanium (a-8iGe:H) layer 14, a P
Doped hydrogenated microcrystalline silicon n-layers 5 are sequentially formed. The non-doped hydrogenated amorphous silicon germanium i-layer 14 is formed using a mixture of SiH4 gas and GeH gas.
各層の厚さは、２層１００人、１層５０００人、ｎ層１
００λ程度とする。最後に、ＩＴＯ（Ｉｎｄｉｕｍ Ｔ
ｉｎ ０ｘｉｄｅ−Ｉ ｎとＳｎの酸化物）膜１６とＡ
ｇ膜１７を形成する。本実施例において作製した多接合
型アモルファスシリコン系太陽電池の光電変換特性は、
擬似太陽光１００ｍＷ／ａＪ照射下で、曲線因子０．６
８．変換効率１２．７％が得られ、ｎｐ接合間に中間層
を有しない従来の３層構造の太陽電池（曲線因子：０．
６２、変換効率：１１．２％）に比べて優れた特性を示
した。The thickness of each layer is 2 layers 100 people, 1 layer 5000 people, n layer 1
It is assumed to be about 00λ. Finally, ITO (Indium T
in Oxide-I n and Sn oxide) film 16 and A
g film 17 is formed. The photoelectric conversion characteristics of the multijunction amorphous silicon solar cell fabricated in this example are as follows:
Fill factor 0.6 under simulated sunlight 100mW/aJ irradiation
8. A conversion efficiency of 12.7% was obtained, compared to a conventional three-layer solar cell without an intermediate layer between np junctions (fill factor: 0.
62, conversion efficiency: 11.2%).
（実施例 ２）
第２図に、本実施例において作製した多接合型アモルフ
ァスシリコン系太陽電池の構成を示す。(Example 2) FIG. 2 shows the configuration of a multijunction type amorphous silicon solar cell produced in this example.
図に示すごとく、まず、ＳＵＳ基板２１上に、まず、Ｔ
ｉ膜２２、Ａｇ膜１７およびＴｉ膜２２よりなる３層電
極を形成する。この３層電極上に。As shown in the figure, first, T is placed on the SUS substrate 21.
A three-layer electrode consisting of an i film 22, an Ag film 17, and a Ti film 22 is formed. on this three-layer electrode.
プラズマＣＶＤ法で、基板温度２５０℃にてＰＨ，ガス
とＳｉＨ，ガスとを混合したガスを用いて、Ｐドープ水
素化微結晶シリコンｎ層５を、次に、ＳｉＨ，ガスとＧ
ｅ Ｈ，ガスを混合したガスを用いて、ノンドープ水
素化アモルファスシリコンゲルマニウム（ａ−８ｉＧｅ
：Ｈ）１層１４を、さらにその上に、Ｂ、Ｈ，ガスとＳ
ｉ Ｈ，ガスとを混合したガスを用いて、Ｂドープ水
素化微結晶シリコンｐ層８を順次形成する。各層の膜厚
は１例えば１層３００人、１層５０００人、ｐ層１００
程度度で良い０次に、その全面に、基板温度１５０〜２
５０℃の範囲内で真空蒸着法にてｓｂドープＳｎＯ□膜
６を１００人の厚さに形成する。By the plasma CVD method, the P-doped hydrogenated microcrystalline silicon n-layer 5 was formed using a mixed gas of PH, gas, SiH, and gas at a substrate temperature of 250°C.
Non-doped hydrogenated amorphous silicon germanium (a-8iGe
:H) 1 layer 14, and on top of that, B, H, gas and S
A B-doped hydrogenated microcrystalline silicon p layer 8 is sequentially formed using a mixed gas of iH and gas. The thickness of each layer is 1. For example, 300 layers per layer, 5000 layers per layer, 100 layers per layer.
The substrate temperature should be 150~2 on the entire surface.
An sb-doped SnO□ film 6 is formed to a thickness of 100 nm by vacuum evaporation within a temperature range of 50°C.
この上に、３０μｍ間隔のストライブ状の高抵抗金属酸
化膜であるＴａ、Ｏｓ膜７を形成する。しかる後、さら
に、Ｐドープ水素化微結晶シリコンｎ層５、ノンドープ
水素化アモルファスシリコンｉ層４．Ｂドープ水素化微
結晶シリコンｐ層８の順に形成する。各層の厚さは、ｎ
層７５人、１層４０００人、ｐ層８０程度度とする。こ
の上に、膜厚１００人のｓｂドープＳｎＯ，膜６と膜厚
５０人のＴａ、Ｏ，膜７を形成する。しかる後、さらに
、Ｐドープ水素化微結晶シリコンｎ層５、ノンドープ水
素化アモルファス２９１２１層４．Ｂドープ水素化アモ
ルファスシリコンカーバイドｐ層３の順に形成する。各
層の厚さは、９層７５人、１層１８００人、ｐ層８０程
度度とする。最後に、全面にＩＴＯＴｉｅを１８００人
の厚さ形成する。On top of this, a Ta, Os film 7, which is a high resistance metal oxide film, is formed in the form of stripes with an interval of 30 μm. Thereafter, a P-doped hydrogenated microcrystalline silicon n-layer 5, a non-doped hydrogenated amorphous silicon i-layer 4. A B-doped hydrogenated microcrystalline silicon p layer 8 is formed in this order. The thickness of each layer is n
There will be 75 people in each layer, 4000 people in each layer, and about 80 people in the p layer. On top of this, an sb-doped SnO film 6 with a thickness of 100 and a Ta, O film 7 with a thickness of 50 are formed. Thereafter, a P-doped hydrogenated microcrystalline silicon n layer 5, a non-doped hydrogenated amorphous 29121 layer 4. A B-doped hydrogenated amorphous silicon carbide p layer 3 is formed in this order. The thickness of each layer is 75 people for 9 layers, 1800 people for 1 layer, and 80 degrees for the p layer. Finally, ITOTie is formed to a thickness of 1800 mm over the entire surface.
本実施例において作製した多接合型アモルファスシリコ
ン系太陽電池の光電変換特性は、擬似太陽光１００ｍＷ
／ａｊ照射下で、曲線因子０．７０、変換効率１３．２
％が得られ、ｎｐ接合間に中間層を有しない従来の３層
構造の太陽電池（曲線因子：０．６２、変換効率：１１
．２％）に比べて優れた特性を示した。The photoelectric conversion characteristics of the multi-junction amorphous silicon solar cell produced in this example are as follows: 100 mW of simulated sunlight
/aj under irradiation, fill factor 0.70, conversion efficiency 13.2
%, compared to a conventional three-layer solar cell without an intermediate layer between np junctions (fill factor: 0.62, conversion efficiency: 11
．． 2%) showed superior properties.
（実施例 ３）
第３図に１本実施例において作製した多接合型アモルフ
ァスシリコン系太陽電池の構成を示す。(Example 3) FIG. 3 shows the structure of a multijunction type amorphous silicon solar cell produced in this example.
実施例２と同様に、ＳＵＳ基板２１上に、まずＴｉ膜２
２、Ａｇ膜１７およびＴｉ膜２２よりなる３層電極を形
成し、該電極上に第１接合セルとして、Ｐドープ水素化
微結晶シリコンｎ層５を。As in Example 2, a Ti film 2 is first deposited on the SUS substrate 21.
2. A three-layer electrode consisting of an Ag film 17 and a Ti film 22 is formed, and a P-doped hydrogenated microcrystalline silicon n layer 5 is formed on the electrode as a first junction cell.
ａ−８ｉＧｅ：Ｈｉ層１４を、Ｂドープ水素化微結晶シ
リコンｐ層８を順次形成する。次に、その全面に、ｓｂ
ドープＳｎＯ□膜６を１００人の厚さに形成する。この
上に、１００μｍ間隔の１０μｍ幅のストライプ状Ｃｒ
電極２３と、その隙間にＴｉｅ、膜２４を形成する。さ
らに、ｓｂドープＳ ｎ Ｏ，膜６を１００人の厚さ形
成する。しかる後、第２接合セルとして実施例２と同様
に、Ｐドープ水素化微結晶シリコンｎ層５、ノンドープ
水素化アモルファス２９１２１層４、Ｂドープ水素化微
結晶シリコンｐ層８の順に形成する。この上に、膜厚１
００人のｓｂドープＳｎＯ，膜６を、ついで、Ｃｒ電極
２３とＴａ、Ｏ，膜７をストライプ状に形成する。しか
る後、第３接合セルとして実施例２同様に、Ｐドープ水
素化微結晶シリコンｎ層５、ノンドープ水素化アモルフ
ァス２９１２１層４、Ｂドープ水素化アモルファスシリ
コンカーバイドｐ層３の順に形成する。最後に、全面に
ＩＴＯＴｉｅを１８００人の厚さ形成する。本実施例に
おいて作製した多接合型アモルファスシリコン系太陽電
池の光電変換特性は、擬似太陽光１００ｍＷ／ａｉ照射
下で、曲線因子０．６９、変換効率１３．０％が得られ
、ｎｐ接合間に中間層を有しない従来の３層構造太陽電
池（曲線因子：０．６２、変換効率：１１．２％）に比
べて優れた特性を示した。An a-8iGe:Hi layer 14 and a B-doped hydrogenated microcrystalline silicon p layer 8 are sequentially formed. Next, on the entire surface, sb
A doped SnO□ film 6 is formed to a thickness of 100 mm. On top of this, striped Cr with a width of 10 μm and an interval of 100 μm is applied.
A tie and a film 24 are formed on the electrode 23 and in the gap therebetween. Further, an sb-doped SnO film 6 is formed to a thickness of 100 nm. Thereafter, as in Example 2, a P-doped hydrogenated microcrystalline silicon n-layer 5, a non-doped hydrogenated amorphous 29121 layer 4, and a B-doped hydrogenated microcrystalline silicon p-layer 8 are formed in this order as a second junction cell. On top of this, a film thickness of 1
Then, a Cr electrode 23 and a Ta, O film 7 are formed in a stripe shape. Thereafter, as in Example 2, a P-doped hydrogenated microcrystalline silicon n-layer 5, a non-doped hydrogenated amorphous 29121 layer 4, and a B-doped hydrogenated amorphous silicon carbide p-layer 3 are formed in this order as a third junction cell. Finally, ITOTie is formed to a thickness of 1800 mm over the entire surface. The photoelectric conversion characteristics of the multi-junction amorphous silicon solar cell fabricated in this example showed that a fill factor of 0.69 and a conversion efficiency of 13.0% were obtained under 100 mW/ai irradiation of simulated sunlight, with a It exhibited superior characteristics compared to a conventional three-layer solar cell without an intermediate layer (fill factor: 0.62, conversion efficiency: 11.2%).
以上詳細に説明したごとく１本発明の多接合型アモルフ
ァスシリコン系太陽電池において、第１接合セルと第２
接合セルの間に中間層を設けることにより、特定波長よ
り短波長の光は第１接合セルにおいて充分に吸収され、
該波長より長波長の光は第２接合セルで吸収され効率よ
く光電変換される。また、第２接合セルと第３接合セル
の間においても上記と同様の中間層を設けることにより
上記と同様の効果が得られる。したがって、光電変換効
率の高い多接合型アモルファスシリコン系太陽電池を実
現することができる。As explained in detail above, in the multi-junction amorphous silicon solar cell of the present invention, the first junction cell and the second
By providing an intermediate layer between the junction cells, light with a wavelength shorter than a specific wavelength is sufficiently absorbed in the first junction cell,
Light with a wavelength longer than this wavelength is absorbed by the second junction cell and efficiently converted into electricity. Moreover, the same effect as above can be obtained by providing an intermediate layer similar to the above between the second junction cell and the third junction cell. Therefore, a multijunction type amorphous silicon solar cell with high photoelectric conversion efficiency can be realized.
第１図は本発明の実施例１において作製した多接合型ア
モルファスシリコン系太陽電池の構成の一例を示す模式
図、第２図は本発明の実施例２において作製した多接合
型アモルファスシリコン系太陽電池の構成の一例を示す
模式図、第３図は本発明の実施例３において作製した多
接合型アモルファスシリコン系太陽電池の構成の一例を
示す模式図、第４図は従来の多接合型のアモルファスシ
リコン系太陽電池の光電流の分光感度特性を示すグラフ
である。
１・・・ガラス基板 ２・・・ＳｎＯ，透明電極
３・・・Ｂドープ水素化アモルファスシリコンカーバイ
ドｐ層
４・・・ノンドープ水素化アモルファス２９１２１層５
・・・Ｐドープ水素化微結晶シリコンｎ層６・・・ｓｂ
ドープＳｎＯ□膜
７−Ｔａ２０５膜
８・・・Ｂドープ水素化微結晶シリコンｐ層１２・・・
ノンドープ窒化シリコン膜
１４・・・ノンドープ水素化アモルファスシリコンゲル
マニウム（ａ−８ｉＧｅ ：Ｈ）ｉ層１６−ＩＴＯ（Ｉ
ｎとＳｎの酸化物）膜１７・・・Ａｇ膜 ２１
・・・ＳＵＳ基板２２・・・Ｔｉ膜 ２３・・
・Ｃｒ電極２４・・・Ｔ ｉ Ｏ，膜
第
７目
先FIG. 1 is a schematic diagram showing an example of the structure of a multijunction type amorphous silicon solar cell manufactured in Example 1 of the present invention, and FIG. 2 is a schematic diagram showing an example of the configuration of a multijunction type amorphous silicon solar cell manufactured in Example 2 of the present invention. FIG. 3 is a schematic diagram showing an example of the structure of a multi-junction type amorphous silicon solar cell produced in Example 3 of the present invention, and FIG. 3 is a graph showing the spectral sensitivity characteristics of photocurrent of an amorphous silicon solar cell. 1... Glass substrate 2... SnO, transparent electrode 3... B-doped hydrogenated amorphous silicon carbide p layer 4... Non-doped hydrogenated amorphous 29121 layer 5
...P-doped hydrogenated microcrystalline silicon n layer 6...sb
Doped SnO□ film 7-Ta205 film 8... B-doped hydrogenated microcrystalline silicon p layer 12...
Non-doped silicon nitride film 14...Non-doped hydrogenated amorphous silicon germanium (a-8iGe:H) i layer 16-ITO (I
n and Sn oxide) film 17...Ag film 21
...SUS substrate 22...Ti film 23...
・Cr electrode 24...T i O, film 7th point
Claims (1)
アモルファスシリコン系太陽電池において、上記ｐｉｎ
接合セルとｐｉｎ接合セルとの間に、特定波長よりも短
い波長の光を反射する中間層を設けたことを特徴とする
多接合型アモルファスシリコン系太陽電池。２、請求の
範囲第１項において、特定波長の光は、光入射側のｐｉ
ｎ接合セルの分光感度特性が漸減する領域の波長の光で
あることを特徴とする多接合型アモルファスシリコン系
太陽電池。 ３、請求の範囲第１項または第２項において、特定波長
よりも短い波長の光を反射する中間層は、金属の酸化膜
、窒化膜のうちから選ばれる少なくとも１種の薄膜から
なることを特徴とする多接合型アモルファスシリコン系
太陽電池。 ４、複数のｐｉｎ接合セルを積層して構成した多接合型
アモルファスシリコン系太陽電池において、上記ｐｉｎ
接合セルとｐｉｎ接合セルとの間に、上記ｐｉｎ接合セ
ルを構成するｐ、ｉ、ｎ各層よりも屈折率の小さい光透
過膜からなる中間層を設けたことを特徴とする多接合型
アモルファスシリコン系太陽電池。 ５、請求の範囲第４項において、ｐｉｎ接合セルを構成
するｐ、ｉ、ｎ各層よりも屈折率の小さい光透過膜から
なる中間層は、金属の酸化物、窒化物、フッ化物のうち
から選ばれる少なくとも１種の薄膜からなることを特徴
とする多接合型アモルファスシリコン系太陽電池。 ６、請求の範囲第１項、第２項または第４項において、
中間層が導電性の光透過膜と絶縁性膜との積層膜からな
ることを特徴とする多接合型アモルファス系太陽電池。 ７、請求の範囲第１項ないし第６項のいずれか１項にお
いて、多接合型アモルファスシリコン系太陽電池を構成
する各ｐｉｎ接合セルが、アモルファスシリコンおよび
アモルファスシリコンゲルマニウムからなることを特徴
とする多接合型アモルファスシリコン系太陽電池。[Claims] 1. In a multi-junction amorphous silicon solar cell constructed by stacking a plurality of pin junction cells, the pin
A multi-junction amorphous silicon solar cell characterized in that an intermediate layer that reflects light with a wavelength shorter than a specific wavelength is provided between a junction cell and a pin junction cell. 2. In claim 1, the light of a specific wavelength is
A multi-junction amorphous silicon solar cell characterized in that the light has a wavelength in a region where the spectral sensitivity characteristics of the n-junction cell gradually decrease. 3. In claim 1 or 2, it is provided that the intermediate layer that reflects light with a wavelength shorter than a specific wavelength is made of at least one kind of thin film selected from metal oxide films and nitride films. Features of multi-junction amorphous silicon solar cells. 4. In a multi-junction amorphous silicon solar cell configured by stacking a plurality of pin junction cells, the pin
A multi-junction type amorphous silicon characterized in that an intermediate layer made of a light-transmitting film having a lower refractive index than each of the p, i, and n layers constituting the pin junction cell is provided between the junction cell and the pin junction cell. system solar cells. 5. In claim 4, the intermediate layer consisting of a light-transmitting film having a lower refractive index than each of the p, i, and n layers constituting the pin junction cell is made of a metal oxide, nitride, or fluoride. A multi-junction amorphous silicon solar cell comprising at least one selected thin film. 6. In claim 1, 2 or 4,
A multijunction amorphous solar cell characterized in that the intermediate layer consists of a laminated film of a conductive light-transmitting film and an insulating film. 7. In any one of claims 1 to 6, each pin junction cell constituting the multijunction amorphous silicon solar cell is made of amorphous silicon and amorphous silicon germanium. Junction type amorphous silicon solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2247141A JPH0793451B2 (en) | 1990-09-19 | 1990-09-19 | Multi-junction amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2247141A JPH0793451B2 (en) | 1990-09-19 | 1990-09-19 | Multi-junction amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04127580A true JPH04127580A (en) | 1992-04-28 |
| JPH0793451B2 JPH0793451B2 (en) | 1995-10-09 |
Family
ID=17159044
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2247141A Expired - Fee Related JPH0793451B2 (en) | 1990-09-19 | 1990-09-19 | Multi-junction amorphous silicon solar cell |
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| Country | Link |
|---|---|
| JP (1) | JPH0793451B2 (en) |
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| Publication number | Publication date |
|---|---|
| JPH0793451B2 (en) | 1995-10-09 |
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