JPH0122991B2 - - Google Patents
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- Publication number
- JPH0122991B2 JPH0122991B2 JP56112571A JP11257181A JPH0122991B2 JP H0122991 B2 JPH0122991 B2 JP H0122991B2 JP 56112571 A JP56112571 A JP 56112571A JP 11257181 A JP11257181 A JP 11257181A JP H0122991 B2 JPH0122991 B2 JP H0122991B2
- Authority
- JP
- Japan
- Prior art keywords
- sno
- type
- ito
- amorphous silicon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 38
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910017875 a-SiN Inorganic materials 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- -1 that is Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
本発明は、高効率のアモルフアスシリコン系太
陽電池に関する。
シラン（SiH4）のプラズマ分解法で得られる
アモルフアスシリコンは、W.E.Spear等によつ
て、PH3やB2H6でドープする事により、その伝
導度を大きく変える事ができることが発見され
（1976年）、D.E.Carlson等によつてアモルフアス
シリコンを用いた太陽電池が試作（1976年）され
て以来注目を集め、アモルフアスシリコン薄膜太
陽電池の効率を改善する研究が活発に行なわれて
いる。
これまでの研究により、アモルフアスシリコン
薄膜光電素子の構造としてはシヨツトキーバリヤ
ー型、pin型、MIS型、ヘテロ接合型があり、そ
のうち前三者が高効率太陽電池として有望視され
ている。すなわちシヨツトキーバリヤー型で5.5
％（D.E.カールソン他、1977年）、MIS型で4.8％
（J.I.B.ウイルソン他、1978）、pin型で4.5％（浜
川圭弘 1978）の変換効率が達成されている。
pinジヤンクシヨン型太陽電池の場合、光を入
射する側に透明電極をつける必要があり、透明電
極としてITO（In2O3＋SnO2）やSnO2が用いられ
てきた。しかしながら、ITOの場合はフイルフア
クターは良いが開放電圧が低く、SnO2の場合は
開放電圧は大きいが、フイルフアクターが悪いと
いう欠点があつた。
本発明者は、pin型光電変換の効率を改善する
為に鋭意研究した結果、ITO―SnO2―ｐ―ｉ―
ｎ又はITO―SnO2―ｎ―ｉ―ｐの構造で、かつ
SnO2の厚みが約50Åから500Åであるアモルフア
スシリコン系太陽電池の構造を用いる事によりフ
イルフアクターと開放電圧とを大巾に改善できる
ことを見い出したもので、太陽電池や光スイツチ
等の光起電力素子として用いることができる。
以下にその詳細を説明する。
本発明のアモルフアスシリコンは、シラン
（SiH4）又はその誘導体又はフツ化シラン又はそ
の誘導体、又はこれらの混合物と、水素又は水素
で希釈したアルゴン、ヘリウム等の不活性ガスと
の混合ガスを、容量結合法又は誘導結合法による
高周波グロー分解又は直流グロー放電分解するこ
とにより得られる。混合ガス中のシランの濃度
は、通常0.5〜50％、好ましくは１〜20％である。
基板の温度は200〜300℃が好ましく、透明電極
を蒸着したガラスや高分子フイルム、金属等、太
陽電池の構成に必要なあらゆる基板が含まれる。
太陽電池の基本構成は、図―１のａ，ｂに代表
例が示される。ａはｐ側から光を照射するタイプ
で、例えばガラス―ITO―SnO2―ｐ―ｉ―ｎ―
Alの構成、ｂはｎ側から光を照射するタイプで、
例えばステンレス―ｐ―ｉ―ｎ―SnO2―ITOの
構成である。その他、ｐ層と透明電極の間に薄い
絶縁層をつけたり、薄い金属層をつけた構造でも
よい。要はITO―SnO2―ｐ―ｉ―ｎ又はITO―
SnO2―ｎ―ｉ―ｐの構造で、かつSnO2の厚みが
約50Åから500Åであるアモルフアスシリコン系
太陽電池を基本とするものであればいかなる構成
でもよい。
シラン若しくはその誘導体、又はフツ化シラン
若しくはその誘導体、又はこれらの混合物のグロ
ー放電分解で得られる約10-7秒以上のキヤリヤー
寿命で約1017cm-3eV-1以下の局在準位密度および
10-3cm2／Ｖ以上の易動度をもつ真性アモルフアス
シリコン（以下、ｉ型ａ―Siという）をｉ層とし
て、ｐ型とｎ型ドーブ半導体で接合したpin接合
構造にするわけであるが、本発明では好ましくは
ｐ層又はｎ層の少なくとも一方、すなわち、すく
なくともSnO2と接する側に、好ましくは一般式
ａ―Si(1-x―y)CxNyまたはａ―Si(1-x)Cx若しくは
ａ―Si(1-y)Nyで示されるアモルフアス半導体
（以下、特定アモルフアス半導体という）を用い
るのがよい。勿論ｐ層とｎ層の両方に用いてもよ
い。
これらの特定アモルフアス半導体については、
本発明者らの発明に係り、本日同時に出願した特
願昭56− 号、並びに先に出願した特願昭56
−12313号、特願昭56−22690号を参照のこと。又
特定アモルフアス半導体を用いないドープ層は、
上記ｉ型ａ―Siをｐ型で用いる場合は周期率表
族の元素でドープし、ｎ型で用いる場合は周期率
表族の元素でドープすればよい。
本発明のITO膜は３〜15wt％のSnO2を含む
In2O3を電子ビーム蒸着又はスパツタ蒸着して作
られる。又本発明のSnO2膜は通常少量のSbをド
ープしたもので、電子ビーム蒸着、スパツタ蒸着
又はCVDによつて製膜される。
第１図ａの透明基板１につける場合は、例えば
ガラス板の上にITO膜を蒸着し、さらにSnO2膜
を30Å〜500Åの厚みにつけて用いられる。
ITO膜の厚みは任意であるが600Å〜4000Åが
好ましい。特に600〜2000Åが好ましい。第１図
ｂの金属基板１３を用いる場合には、１２，１
１，１０のアモルフアス半導体をつけた後、その
上に30〜500ÅのSnO2をつけ、さらにITOを蒸着
する。
次に比較試験の結果を用いて本発明の効果を説
明する。
＜比較試験 １＞
アモルフアス半導体を堆積すべき基板として
は、
ガラス／ITO（1000Å，15Ω／口）、
ガラス／SnO2（2500Å，25Ω／口）、
ガラス／ITO（1000Å）／SnO2（30Å）（15
Ω／口）、
ガラス／ITO（1000Å）／SnO2（50Å）（15
Ω／口）、
ガラス／ITO（1000Å）／SnO2（100Å）（15
Ω／口）、
ガラス／ITO（1000Å）／SnO2（300Å）（15
Ω／口）、
ガラス／ITO（1000Å）／SnO2（500Å）（15
Ω／口）
の７種類を用いた。これらのITO，SnO2はいず
れもスパツター法により蒸着したものである。内
径11cmの石英反応管を用い、基板温度を250℃に
保つて、13.56MHzの高周波でグロー放電分解を
行い、アモルフアス半導体を下記の条件に従つて
ｐ，ｉ，ｎの順に堆積し、最後に１cm2の面積に
Alを蒸着してpin型太陽電池を製作した。
ｐ，ｉ，ｎ層の製造条件は次のとおりである。
Γ 真性アモルフアスシリコン（ｉ，ａ―Si：
Ｈ）
SiH4／H2 3Torr、厚み5000Å
Γ ｎ型アモルフアスシリコン（ｎ、ａ―Si：
Ｈ）
PH3／SiH4＝0.5％、3Torr、厚み500Å
Γ ｐ型アモルフアスシリコン（ｐ、ａ―Si：
Ｈ）
B2H6／SiH4＝0.2％、3Torr、厚み100Å
Γ ｐ型アモルフアスシリコン・カーバイト
（ｐ、ａ―SiC：Ｈ）
B2H6／（SiH4＋CH4）＝0.1％
SiH4／CH4＝3/7、3Torr、厚み100Å
Γ ｐ型アモルフアスシリコン・ナイトライド
（ｐ、ａ―SiN：Ｈ）
B2H6／（SiH4＋NH3）＝0.1％
SiH4／NH3＝1/1、3Torr、厚み100Å
製作したpin型太陽電池の変換効率が基板の相
違に応じて如何に異なるかを、AM―１
（100mW／cm2）のソーラーシユミレーターを用い
て測定した。
その結果は、表１―１、１―２、１―３に示す
とおりである。これらの表においてJSc、Voc、
FF及びηは、夫々短絡電流、開放電圧、フイル
フアクター及び変換効率を示す。
The present invention relates to a highly efficient amorphous silicon solar cell. WESpear and others discovered that the conductivity of amorphous silicon obtained by plasma decomposition of silane (SiH 4 ) could be greatly changed by doping it with PH 3 or B 2 H 6 (1976). Since solar cells using amorphous silicon were prototyped by Carlson et al. (1976), they have attracted attention, and research has been actively conducted to improve the efficiency of amorphous silicon thin-film solar cells. Research has shown that amorphous silicon thin-film photovoltaic devices can be structured as Schottky barrier type, pin type, MIS type, or heterojunction type, of which the first three are considered to be promising as high-efficiency solar cells. i.e. 5.5 for shot key barrier type.
% (DE Carlson et al., 1977), 4.8% for MIS type
(JIB Wilson et al., 1978), and a conversion efficiency of 4.5% (Keihiro Hamakawa, 1978) has been achieved in the pin type. In the case of pin junction solar cells, it is necessary to attach a transparent electrode to the side where light enters, and ITO (In 2 O 3 + SnO 2 ) and SnO 2 have been used as the transparent electrode. However, in the case of ITO, the film factor is good but the open circuit voltage is low, and in the case of SnO 2 , the open circuit voltage is high but the film factor is poor. As a result of intensive research to improve the efficiency of pin-type photoelectric conversion, the present inventor discovered ITO-SnO 2 -p-i-
n or ITO-SnO 2 -n-i-p structure, and
It was discovered that the film factor and open circuit voltage can be greatly improved by using an amorphous silicon solar cell structure in which the SnO 2 thickness is approximately 50 Å to 500 Å. It can be used as an electromotive force element. The details will be explained below. The amorphous silicon of the present invention can be produced using a mixed gas of silane (SiH 4 ) or its derivatives, fluorinated silane or its derivatives, or a mixture thereof, and hydrogen or an inert gas such as argon or helium diluted with hydrogen. It can be obtained by high frequency glow decomposition or direct current glow discharge decomposition using a capacitive coupling method or an inductive coupling method. The concentration of silane in the mixed gas is usually 0.5 to 50%, preferably 1 to 20%. The temperature of the substrate is preferably 200 to 300°C, and includes any substrate necessary for the construction of a solar cell, such as glass with a transparent electrode deposited, polymer film, metal, etc. Typical examples of the basic configuration of solar cells are shown in Figures 1a and 1b. A is a type that irradiates light from the p side, for example, glass-ITO-SnO 2 -p-i-n-
The configuration of Al, b is the type that irradiates light from the n side,
For example, it has a structure of stainless steel-pin-SnO 2 -ITO. In addition, a structure in which a thin insulating layer or a thin metal layer is provided between the p-layer and the transparent electrode may be used. Basically ITO-SnO 2 -p-i-n or ITO-
Any structure may be used as long as it is based on an amorphous silicon solar cell having a SnO 2 -nip structure and a SnO 2 thickness of approximately 50 Å to 500 Å. A localized level density of about 10 17 cm -3 eV -1 or less with a carrier lifetime of about 10 -7 seconds or more obtained by glow discharge decomposition of silane or its derivatives, or fluorinated silanes or its derivatives, or mixtures thereof. and
Intrinsic amorphous silicon (hereinafter referred to as i-type a-Si) with a mobility of 10 -3 cm 2 /V or more is used as the i layer, and a pin junction structure is created in which p-type and n-type doped semiconductors are joined. However, in the present invention , preferably at least one of the p layer or the n layer , that is, at least the side in contact with SnO ) It is preferable to use an amorphous semiconductor represented by Cx or a-Si (1-y) Ny (hereinafter referred to as a specific amorphous semiconductor). Of course, it may be used for both the p layer and the n layer. Regarding these specific amorphous semiconductors,
Regarding the invention of the present inventors, the patent application No. 1982 filed simultaneously today and the patent application filed earlier in 1982
See No.-12313 and Japanese Patent Application No. 56-22690. Also, doped layers that do not use specific amorphous semiconductors are
When the i-type a-Si is used as a p-type, it may be doped with an element of the periodic table group, and when it is used as an n-type, it may be doped with an element of the periodic table group. The ITO film of the present invention contains 3-15wt% SnO2
It is made by electron beam evaporation or sputter deposition of In 2 O 3 . Further, the SnO 2 film of the present invention is usually doped with a small amount of Sb and is formed by electron beam evaporation, sputter evaporation, or CVD. When attaching to the transparent substrate 1 shown in FIG. 1a, for example, an ITO film is deposited on a glass plate, and a SnO 2 film is further applied to a thickness of 30 Å to 500 Å. The thickness of the ITO film is arbitrary, but preferably 600 Å to 4000 Å. Particularly preferred is 600 to 2000 Å. When using the metal substrate 13 of FIG. 1b, 12,1
After applying an amorphous semiconductor of 1.10 nm, SnO 2 of 30 to 500 Å is applied thereon, and ITO is further deposited. Next, the effects of the present invention will be explained using the results of a comparative test. <Comparative Test 1> The substrates on which amorphous semiconductors are to be deposited are: glass/ITO (1000Å, 15Ω/hole), glass/SnO 2 (2500Å, 25Ω/hole), glass/ITO (1000Å)/SnO 2 (30Å). (15
Ω/mouth), Glass/ITO (1000Å)/SnO 2 (50Å) (15
Ω/mouth), Glass/ITO (1000Å)/SnO 2 (100Å) (15
Ω/mouth), Glass/ITO (1000Å)/SnO 2 (300Å) (15
Ω/mouth), Glass/ITO (1000Å)/SnO 2 (500Å) (15
Seven types of Ω/mouth) were used. Both ITO and SnO 2 were deposited by sputtering. Using a quartz reaction tube with an inner diameter of 11 cm, the substrate temperature was maintained at 250 °C, glow discharge decomposition was performed at a high frequency of 13.56 MHz, and amorphous semiconductors were deposited in the order of p, i, and n according to the following conditions. in an area of 1 cm 2
A pin-type solar cell was fabricated by depositing Al. The manufacturing conditions for the p, i, and n layers are as follows. Γ Intrinsic amorphous silicon (i,a-Si:
H) SiH 4 /H 2 3Torr, thickness 5000Å Γ n-type amorphous silicon (n, a-Si:
H) PH 3 /SiH 4 =0.5%, 3Torr, thickness 500Å Γ p-type amorphous silicon (p, a-Si:
H) B 2 H 6 /SiH 4 =0.2%, 3Torr, thickness 100Å Γ p-type amorphous silicon carbide (p, a-SiC:H) B 2 H 6 /(SiH 4 +CH 4 ) = 0.1% SiH 4 /CH 4 =3/7, 3Torr, thickness 100Å Γ p-type amorphous silicon nitride (p, a-SiN:H) B 2 H 6 / (SiH 4 +NH 3 ) = 0.1% SiH 4 /NH 3 = 1/1, 3Torr, thickness 100Å AM-1 shows how the conversion efficiency of the manufactured pin-type solar cell varies depending on the substrate.
(100 mW/cm 2 ) using a solar simulator. The results are shown in Tables 1-1, 1-2, and 1-3. In these tables, JSc, Voc,
FF and η represent short circuit current, open circuit voltage, foil factor, and conversion efficiency, respectively.
【表】
池の場合のデータである。
[Table] Data for ponds.
【表】
陽電池の場合のデータである。
[Table] Data for solar cells.
【表】
陽電池の場合のデータである。
上記表１―１によれば、ｐ層にａ―Si：Ｈを用
いたPin接合太陽電池の場合でも、基板すなわ
ちガラス／ITO（1000Å）／SnO2（100Å）（15
Ω／口）を用いると変換効率η（％）の向上する
こが判かるが、この効率ηの向上効果は、ガラ
ス／ITO／SnO2タイプの基板をｐ型ａ―SiC：Ｈ
やｐ型ａ―SiN：Ｈに直接接触させた場合に特に
顕著に生じるものである（表１―２，及び１―３
参照）。また表１―２から、同じガラス／ITO／
SnO2タイプの基板であつても、SnO2の厚みが50
Å以上ある基板（）の方が、50Åより薄い
基板（）よりも好ましいことが判かる。また
SnO2の厚みが500Åの基板（）の場合、変換効
率がやゝ低下することも判明した。
＜比較試験 ２＞
金属基板としてステンレススチール板を用い、
比較試験１と同様のグロー放電分解を行い、下記
の条件に従つてアモルフアス半導体をｐ―ｉ―ｎ
の順にステンレススチール板の上に堆積し、次い
でｎ層に接して透明電極を電子ビーム蒸着してイ
ンバーテツドpin型太陽電池を製作した。
透明電極としては
○イ ITO（1000Å、15Ω／口）
○ロ SnO2（2500Å、25Ω／口）
○ハ SnO2（100Å）＋ITO（1000Å）（15Ω／口）
を用いた。但し、○ハの場合ｎ層と接するのはITO
膜ではなくて、SnO2膜である。
各層の製造条件は次のとおりである。
Γ 真性アモルフアスシリコン
（ｉ、ａ―Si：Ｈ）
厚み4000Å
Γ ｐ型アモルフアスシリコン
（ｐ、ａ―Si：Ｈ）
B2H6／SiH4＝1.0％、厚み300Å
Γ ｎ型アモルフアスシリコン
（ｎ、ａ―Si：Ｈ）
PH3／SiH4＝0.5％、厚み100Å
Γ ｎ型アモルフアスシリコン・カーバイト
（ｎ、ａ―SiC：Ｈ）
PH3／（SiH4＋CH4）＝0.5％
SiH4／CH4＝1/1、厚み100Å
Γ ｎ型アモルフアスシリコン・ナイトライド
（ｎ、ａ―SiN：Ｈ）
PH3／（SiH4＋NH3）＝0.5％
SiH4／NH3＝1/1、厚み100Å
製作した逆pin型太陽電池の変換効率が、透明
電極の相違に応じて如何に異なるかを、前述のソ
ーラーシユミレーターを用いて測定した。その結
果は表２―１、２―２、２―３に示す通りであ
る。[Table] Data for solar cells.
According to Table 1-1 above, even in the case of a pin junction solar cell using a-Si:H for the p layer, the substrate, that is, glass/ITO (1000 Å)/SnO 2 (100 Å) (15
It can be seen that the conversion efficiency η (%) is improved by using a glass/ITO/SnO 2 type substrate with a p-type a-SiC:H
This phenomenon is particularly noticeable when it comes into direct contact with p-type a-SiN:H (Tables 1-2 and 1-3).
reference). Also, from Table 1-2, the same glass /ITO/
Even if it is a SnO 2 type substrate, the thickness of SnO 2 is 50
It can be seen that a substrate () with a thickness of Å or more is preferable to a substrate () with a thickness of less than 50 Å. Also
It was also found that in the case of a substrate () with a SnO 2 thickness of 500 Å, the conversion efficiency decreased slightly. <Comparative test 2> Using a stainless steel plate as the metal substrate,
The same glow discharge decomposition as in Comparative Test 1 was carried out, and the amorphous semiconductor was p-i-n according to the following conditions.
A transparent electrode was deposited on a stainless steel plate in this order, and then a transparent electrode was deposited by electron beam evaporation in contact with the n-layer to fabricate an inverted pin type solar cell. As the transparent electrodes, ○A ITO (1000Å, 15Ω/hole) ○B SnO 2 (2500Å, 25Ω/hole) ○C SnO 2 (100Å) + ITO (1000Å) (15Ω/hole) were used. However, in the case of ○C, the material in contact with the n layer is ITO.
It's not a film, but a SnO 2 film. The manufacturing conditions for each layer are as follows. Γ True amorphous silicon
(i, a-Si:H) Thickness 4000Å Γ p-type amorphous silicon
(p, a-Si:H) B 2 H 6 /SiH 4 =1.0%, thickness 300Å Γ n-type amorphous silicon
(n,a-Si:H) PH 3 /SiH 4 =0.5%, thickness 100Å Γ n-type amorphous silicon carbide (n,a-SiC:H) PH 3 /(SiH 4 +CH 4 ) = 0.5% SiH 4 /CH 4 = 1/1, thickness 100Å Γ n-type amorphous silicon nitride (n, a-SiN:H) PH 3 / (SiH 4 +NH 3 ) = 0.5% SiH 4 /NH 3 = 1/ 1. Thickness: 100 Å We used the solar simulator described above to measure how the conversion efficiency of the fabricated inverted pin type solar cells differed depending on the transparent electrode. The results are shown in Tables 2-1, 2-2, and 2-3.
【表】【table】
【表】【table】
【表】
上記表２―１、２―２、２―３によれば、ｎ層
側から光を入射する逆pin型の太陽電池において
も、ｎ層の次にSnO2膜をつけたのち、ITOをつ
けた構造の透明電極（○ハ）を用いることにより、
著しい効率の向上を実現できることが認められ
る。
以上を要するに、本発明は各種のアモルフアス
シリコン系太陽電池の変換効率を極めて容易に向
上させ得る点で斯界に画期的な寄与をなすもので
ある。[Table] According to Tables 2-1, 2-2, and 2-3 above, even in reverse pin type solar cells in which light enters from the n-layer side, after attaching a SnO 2 film next to the n-layer, By using a transparent electrode with an ITO structure (○c),
It is recognized that significant efficiency improvements can be achieved. In summary, the present invention makes an epoch-making contribution to the field in that it can extremely easily improve the conversion efficiency of various amorphous silicon solar cells.
第１図ａ、ｂは、いずれも本発明に係る太陽電
池の基本構成を示す略示側面図であつて、同ａは
透明電極を用いるタイプの基本構成、同ｂは金属
基板を用いるタイプの基本構成を示すものであ
る。
１……透明基板、２……ITO膜、３……SnO2
膜、４……ｐ型アモルフアス半導体、５……真性
アモルフアスシリコン、６……ｎ型アモルフアス
シリコン、７……アルミニユーム電極、８……
ITO膜、９……SnO2膜、１０……ｎ型アモルフ
アス半導体、１１……真性アモルフアスシリコ
ン、１２……ｐ型アモルフアスシリコン、１３…
…金属基板。
Figures 1a and 1b are schematic side views showing the basic configuration of a solar cell according to the present invention, in which figure 1a is the basic configuration of a type using transparent electrodes, and figure 1b is a schematic side view of the type using a metal substrate. This shows the basic configuration. 1...Transparent substrate, 2...ITO film, 3...SnO 2
Film, 4... p-type amorphous semiconductor, 5... intrinsic amorphous silicon, 6... n-type amorphous silicon, 7... aluminum electrode, 8...
ITO film, 9... SnO 2 film, 10... n-type amorphous semiconductor, 11... intrinsic amorphous silicon, 12... p-type amorphous silicon, 13...
...Metal substrate.
Claims (1)
電池において、ITO―SnO2―ｐ―ｉ―ｎ又は
ITO―SnO2―ｎ―ｉ―ｐの構造で、かつSnO2膜
の厚みが約30Åから500Åであることを特徴とす
る高効率のアモルフアスシリコン系太陽電池。 ２ 前記の電池構造において、SnO2膜と接する
ｐ層又はｎ層のアモルフアス半導体が、一般式ａ
―Si(1-x)Cx：Ｈ又はａ―Si(1-y)Ny：Ｈ、又はａ
―Si(1-x-y)CxNyであることを特徴とする特許請
求の範囲第１項に記載の高効率のアモルフアスシ
リコン系太陽電池。[Claims] 1. In a p-i-n junction amorphous silicon solar cell, ITO-SnO 2 -p-i-n or
A highly efficient amorphous silicon solar cell characterized by an ITO-SnO 2 -n-i-p structure and a SnO 2 film thickness of about 30 Å to 500 Å. 2 In the above battery structure, the p-layer or n-layer amorphous semiconductor in contact with the SnO 2 film has the general formula a
-Si (1-x) Cx:H or a-Si (1-y) Ny:H or a
-Si (1-xy) CxNy Highly efficient amorphous silicon solar cell according to claim 1.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112571A JPS5814582A (en) | 1981-07-17 | 1981-07-17 | Highly efficient amorphous silicon solar cell |
| EP82106293A EP0070509B2 (en) | 1981-07-17 | 1982-07-14 | Amorphous semiconductor and amorphous silicon photovoltaic device |
| DE8888117644T DE3280418T2 (en) | 1981-07-17 | 1982-07-14 | AMORPHOUS SEMICONDUCTOR AND PHOTOVOLTAIC DEVICE MADE OF AMORPHOUS SILICON. |
| EP88117644A EP0309000B1 (en) | 1981-07-17 | 1982-07-14 | Amorphous semiconductor and amorphous silicon photovoltaic device |
| DE8282106293T DE3280112D1 (en) | 1981-07-17 | 1982-07-14 | AMORPHOUS SEMICONDUCTOR AND PHOTOVOLTAIC DEVICE MADE OF AMORPHIC SILICON. |
| US06/399,312 US4450316A (en) | 1981-07-17 | 1982-07-19 | Amorphous silicon photovoltaic device having two-layer transparent electrode |
| US06/552,952 US4491682A (en) | 1981-07-17 | 1983-11-17 | Amorphous silicon photovoltaic device including a two-layer transparent electrode |
| US06/552,951 US4499331A (en) | 1981-07-17 | 1983-11-17 | Amorphous semiconductor and amorphous silicon photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56112571A JPS5814582A (en) | 1981-07-17 | 1981-07-17 | Highly efficient amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814582A JPS5814582A (en) | 1983-01-27 |
| JPH0122991B2 true JPH0122991B2 (en) | 1989-04-28 |
Family
ID=14590036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56112571A Granted JPS5814582A (en) | 1981-07-17 | 1981-07-17 | Highly efficient amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814582A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5958874A (en) * | 1982-09-29 | 1984-04-04 | Toshiba Corp | Amorphous silicon solar cell |
| JPS58151072A (en) * | 1983-02-08 | 1983-09-08 | Konishiroku Photo Ind Co Ltd | Solar battery and manufacture thereof |
| JPS58151073A (en) * | 1983-02-08 | 1983-09-08 | Konishiroku Photo Ind Co Ltd | Manufacture of solar battery |
| JPS59161881A (en) * | 1983-03-07 | 1984-09-12 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric conversion device |
| IN165761B (en) * | 1983-07-28 | 1990-01-06 | Energy Conversion Devices Inc | |
| JPS60103683A (en) * | 1983-11-10 | 1985-06-07 | Kanegafuchi Chem Ind Co Ltd | Substrate for semiconductor device |
| JPS61168272A (en) * | 1985-01-21 | 1986-07-29 | Semiconductor Energy Lab Co Ltd | Manufacture of non-single crystal silicon solar battery |
| JPS6472570A (en) * | 1987-09-11 | 1989-03-17 | Sanyo Electric Co | Photovoltaic device |
-
1981
- 1981-07-17 JP JP56112571A patent/JPS5814582A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5814582A (en) | 1983-01-27 |
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