JPS6472570A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS6472570A JPS6472570A JP62229098A JP22909887A JPS6472570A JP S6472570 A JPS6472570 A JP S6472570A JP 62229098 A JP62229098 A JP 62229098A JP 22909887 A JP22909887 A JP 22909887A JP S6472570 A JPS6472570 A JP S6472570A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- fluorine
- electrode film
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To improve adhesive properties to an amorphous silicon film without largely increasing a sheet resistance value as a transparent electrode film by forming the electrode film of tin oxide to have a laminated construction of a layer containing fluorine and a layer containing no fluorine, and bringing the layer containing no fluorine into contact with the amorphous silicon layer. CONSTITUTION:The transparent electrode film 2 of a photovoltaic device in which the transparent electrode film 2, an amorphous silicon film 3 containing an optical active layer and a back face electrode film 4 are laminated is composed of tin oxide having at least two layers of a layer 2a containing fluorine and a layer 2b containing no fluorine, and the layer 2b is brought into contact with the film 3. For example, the film 2 made of SnO2 having the layer 2a containing the F of the side in contact with a translucent substrate 1 and the layer 2b containing no F thereon is formed on the substrate 1 made of glass or the like. The amorphous silicon film 3 having a pin junction in which a p-type layer 3p, an i-type layer 3i as an optical active layer and an n-type layer 3n are laminated in this order from the side of the film 2, and a rear surface electrode film 4 made of aluminum or the like are formed thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62229098A JPS6472570A (en) | 1987-09-11 | 1987-09-11 | Photovoltaic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62229098A JPS6472570A (en) | 1987-09-11 | 1987-09-11 | Photovoltaic device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6472570A true JPS6472570A (en) | 1989-03-17 |
Family
ID=16886720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62229098A Pending JPS6472570A (en) | 1987-09-11 | 1987-09-11 | Photovoltaic device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6472570A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814582A (en) * | 1981-07-17 | 1983-01-27 | Kanegafuchi Chem Ind Co Ltd | Highly efficient amorphous silicon solar cell |
JPS5958874A (en) * | 1982-09-29 | 1984-04-04 | Toshiba Corp | Amorphous silicon solar cell |
JPS6273782A (en) * | 1985-09-27 | 1987-04-04 | Taiyo Yuden Co Ltd | Amorphous semiconductor solar battery |
-
1987
- 1987-09-11 JP JP62229098A patent/JPS6472570A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814582A (en) * | 1981-07-17 | 1983-01-27 | Kanegafuchi Chem Ind Co Ltd | Highly efficient amorphous silicon solar cell |
JPS5958874A (en) * | 1982-09-29 | 1984-04-04 | Toshiba Corp | Amorphous silicon solar cell |
JPS6273782A (en) * | 1985-09-27 | 1987-04-04 | Taiyo Yuden Co Ltd | Amorphous semiconductor solar battery |
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