JPS56135980A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS56135980A JPS56135980A JP4006480A JP4006480A JPS56135980A JP S56135980 A JPS56135980 A JP S56135980A JP 4006480 A JP4006480 A JP 4006480A JP 4006480 A JP4006480 A JP 4006480A JP S56135980 A JPS56135980 A JP S56135980A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoconductive layer
- amorphous silicon
- ohmic contact
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To improve the photoconductivity of a visible rays region and elevate the thermal stability and the wear-proof by a method wherein a photoconductive layer is composed of an amorphous silicon containing hydrogen or/and halogen elements. CONSTITUTION:The photoconductive layer 6 is formed on a substrate 4 on which a picture element having an ohmic contact layer 5 is formed. A common electrode 8 is formed further on the photoconductive layer 6 by a vacuum evaporating method through the ohmic contact layer 7. The photoconductive layer 6 is composed of the amorphous silicon layer containing 1-30atom% of hydrogen or/and halogen elements and is made a layer as thick as 0.3-10mu and 0.5-3mu is suitably preferred.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4006480A JPS56135980A (en) | 1980-03-28 | 1980-03-28 | Photoelectric conversion element |
US06/246,218 US4405915A (en) | 1980-03-28 | 1981-03-23 | Photoelectric transducing element |
DE19813112209 DE3112209A1 (en) | 1980-03-28 | 1981-03-27 | PHOTOELECTRIC CONVERTER ELEMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4006480A JPS56135980A (en) | 1980-03-28 | 1980-03-28 | Photoelectric conversion element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56135980A true JPS56135980A (en) | 1981-10-23 |
Family
ID=12570486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4006480A Pending JPS56135980A (en) | 1980-03-28 | 1980-03-28 | Photoelectric conversion element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56135980A (en) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56140674A (en) * | 1980-04-04 | 1981-11-04 | Hitachi Ltd | Photosensor arraying device |
JPS58106863A (en) * | 1981-12-18 | 1983-06-25 | Sanyo Electric Co Ltd | Integration type semiconductor photo-receptor |
JPS58125868A (en) * | 1982-01-22 | 1983-07-27 | Sanyo Electric Co Ltd | Color sensor |
JPS58125865A (en) * | 1982-01-22 | 1983-07-27 | Sanyo Electric Co Ltd | Photo sensor |
JPS58125867A (en) * | 1982-01-22 | 1983-07-27 | Sanyo Electric Co Ltd | Color sensor |
JPS58125869A (en) * | 1982-01-22 | 1983-07-27 | Sanyo Electric Co Ltd | Photo sensor |
JPS58130563A (en) * | 1982-01-29 | 1983-08-04 | Seiko Epson Corp | Manufacture of image sensor |
JPS5928156A (en) * | 1982-12-29 | 1984-02-14 | Konishiroku Photo Ind Co Ltd | Manufacture of exposure mask |
JPS5952872A (en) * | 1982-09-20 | 1984-03-27 | Fujitsu Ltd | Photo-receiving device |
JPS59161862A (en) * | 1983-03-07 | 1984-09-12 | Fuji Xerox Co Ltd | Manufacture of original read-out element of continuous thin film |
JPS60231359A (en) * | 1984-04-28 | 1985-11-16 | Oki Electric Ind Co Ltd | Photodiode array |
JPS6167262A (en) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS6167261A (en) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS6167263A (en) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS6171665A (en) * | 1984-09-17 | 1986-04-12 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS62169380A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS62169381A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS62169378A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS62169379A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS62169382A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS62174979A (en) * | 1987-01-05 | 1987-07-31 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
-
1980
- 1980-03-28 JP JP4006480A patent/JPS56135980A/en active Pending
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56140674A (en) * | 1980-04-04 | 1981-11-04 | Hitachi Ltd | Photosensor arraying device |
JPS58106863A (en) * | 1981-12-18 | 1983-06-25 | Sanyo Electric Co Ltd | Integration type semiconductor photo-receptor |
JPS58125868A (en) * | 1982-01-22 | 1983-07-27 | Sanyo Electric Co Ltd | Color sensor |
JPS58125865A (en) * | 1982-01-22 | 1983-07-27 | Sanyo Electric Co Ltd | Photo sensor |
JPS58125867A (en) * | 1982-01-22 | 1983-07-27 | Sanyo Electric Co Ltd | Color sensor |
JPS58125869A (en) * | 1982-01-22 | 1983-07-27 | Sanyo Electric Co Ltd | Photo sensor |
JPH0477471B2 (en) * | 1982-01-22 | 1992-12-08 | Sanyo Electric Co | |
JPH0477470B2 (en) * | 1982-01-22 | 1992-12-08 | Sanyo Electric Co | |
JPH0478019B2 (en) * | 1982-01-22 | 1992-12-10 | Sanyo Electric Co | |
JPS58130563A (en) * | 1982-01-29 | 1983-08-04 | Seiko Epson Corp | Manufacture of image sensor |
JPS5952872A (en) * | 1982-09-20 | 1984-03-27 | Fujitsu Ltd | Photo-receiving device |
JPH0548464B2 (en) * | 1982-12-29 | 1993-07-21 | Konishiroku Photo Ind | |
JPS5928156A (en) * | 1982-12-29 | 1984-02-14 | Konishiroku Photo Ind Co Ltd | Manufacture of exposure mask |
JPS59161862A (en) * | 1983-03-07 | 1984-09-12 | Fuji Xerox Co Ltd | Manufacture of original read-out element of continuous thin film |
JPS60231359A (en) * | 1984-04-28 | 1985-11-16 | Oki Electric Ind Co Ltd | Photodiode array |
JPS6167261A (en) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS6167263A (en) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS6167262A (en) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS6171665A (en) * | 1984-09-17 | 1986-04-12 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS62169381A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS62169378A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS62169379A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS62169382A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS62174979A (en) * | 1987-01-05 | 1987-07-31 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS62169380A (en) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56135980A (en) | Photoelectric conversion element | |
JPS55108780A (en) | Thin film solar cell | |
JPS57115556A (en) | Photoconductive material | |
JPS5625743A (en) | Electrophotographic receptor | |
JPS5693375A (en) | Photoelectric conversion device | |
JPS5739588A (en) | Solid state image pickup device | |
JPS5744154A (en) | Electrophotographic image formation member | |
JPS564150A (en) | Electrophotographic receptor | |
JPS5721875A (en) | Photosensor | |
JPS57115559A (en) | Photoconductive material | |
JPS5377628A (en) | Electrophotographic system | |
JPS5739569A (en) | Solid state image pickup device | |
JPS5250238A (en) | Amorphous selenium.tellurium electrophotographic light sensitive mater ial | |
JPS56142680A (en) | Photoconductive semiconductor device | |
JPS56153782A (en) | Photoconductive thin-film for television camera tube using photosensitizer layer containing amorphous silicon | |
JPS57114290A (en) | Amorphous thin film solar battery | |
JPS644083A (en) | Photovoltaic device | |
JPS56125881A (en) | Optical semiconductor element | |
JPS5774945A (en) | Photoconductive film for image pick-up tube | |
JPS5721876A (en) | Photosensor | |
JPS5569149A (en) | Electrophotographic photosensitive plate | |
JPS5632774A (en) | Thin film type photovoltaic element and manufacture thereof | |
JPS5470838A (en) | Photosensitive element for zerography | |
JPS57115555A (en) | Photoconductive material | |
JPS5660444A (en) | Electrophotographic receptor |