JPS5660444A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS5660444A
JPS5660444A JP13675379A JP13675379A JPS5660444A JP S5660444 A JPS5660444 A JP S5660444A JP 13675379 A JP13675379 A JP 13675379A JP 13675379 A JP13675379 A JP 13675379A JP S5660444 A JPS5660444 A JP S5660444A
Authority
JP
Japan
Prior art keywords
layer
amorphous silicon
conductive substrate
boron
sih
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13675379A
Other languages
Japanese (ja)
Inventor
Kazuhiro Kawajiri
Masatoshi Tabei
Akio Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP13675379A priority Critical patent/JPS5660444A/en
Publication of JPS5660444A publication Critical patent/JPS5660444A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a photoreceptor high in dark resistance, sensitivity, and resolution, by forming an amorphous silicon film having P-N junction formed by electric discharge in silane on a conductive substrate or on a thin insulating film provided on the conductive substrate surface.
CONSTITUTION: Nondoped amorphous silicon layer 13 is formed by electric gas discharge using Ar gas diluted SiH4 on conductive substrate 11 directly or on insulating charge blocking layer 12 made of 1W1,000nm thick SiO2 or the like provided on substrate 11. Then, an amorphous silicon doped with e.g. boron is deposited using boron or aluminum compound e.g. Ar gas containing B2H6 and SiH4 as a positive type impurity of a doping atom on layer 13 to form layer of about 0.2μm thickness, thus permitting a superior electrophotographic receptor consisting chiefly of nonpollutive silicon to be obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP13675379A 1979-10-23 1979-10-23 Electrophotographic receptor Pending JPS5660444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13675379A JPS5660444A (en) 1979-10-23 1979-10-23 Electrophotographic receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13675379A JPS5660444A (en) 1979-10-23 1979-10-23 Electrophotographic receptor

Publications (1)

Publication Number Publication Date
JPS5660444A true JPS5660444A (en) 1981-05-25

Family

ID=15182689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13675379A Pending JPS5660444A (en) 1979-10-23 1979-10-23 Electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS5660444A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983001127A1 (en) * 1981-09-28 1983-03-31 Matsuzaki, Masatoshi Image formation method
JPS58211669A (en) * 1982-06-03 1983-12-09 Canon Inc Calibration of surface potential meter
JPS6055352A (en) * 1983-09-07 1985-03-30 Oki Electric Ind Co Ltd Manufacture of electrophotographic sensitive body

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983001127A1 (en) * 1981-09-28 1983-03-31 Matsuzaki, Masatoshi Image formation method
JPS58211669A (en) * 1982-06-03 1983-12-09 Canon Inc Calibration of surface potential meter
JPH0456262B2 (en) * 1982-06-03 1992-09-07 Canon Kk
JPS6055352A (en) * 1983-09-07 1985-03-30 Oki Electric Ind Co Ltd Manufacture of electrophotographic sensitive body

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