JPS5724575A - Solid state image pick up device - Google Patents

Solid state image pick up device

Info

Publication number
JPS5724575A
JPS5724575A JP10034480A JP10034480A JPS5724575A JP S5724575 A JPS5724575 A JP S5724575A JP 10034480 A JP10034480 A JP 10034480A JP 10034480 A JP10034480 A JP 10034480A JP S5724575 A JPS5724575 A JP S5724575A
Authority
JP
Japan
Prior art keywords
layer
drain region
charge
generated
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10034480A
Other languages
Japanese (ja)
Inventor
Koichi Sekine
Nobuo Suzuki
Tetsuo Yamada
Hiroshige Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10034480A priority Critical patent/JPS5724575A/en
Publication of JPS5724575A publication Critical patent/JPS5724575A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve the sensitivity, the resolution and the spectral characteristic of a solid state image pick up device, by forming a drain region for absorbing minority carriers generated at the deep part under a photosensitive region by a photoelectric conversion. CONSTITUTION:An accumulation electrode 3 is provided on a P type silicon layer 7 through an insulator film 2, and a light interception film 6 for unnecessary incident light heams is formed on the top surface. Moreover, a drain region 8 consisting of an N type silicon is formed under the P layer 7. Applying a plus electric charge to the accumulation electrode 3 causes formation of a depletion layer 9, and applying a plus charge VB to the drain region causes formation of a depletion layer 10. Both the depletion layers 9, 10 are connected to each other to make a punch- through condition, the charge distribution under said distribution is shown in the drawing by the broken line and the solid line when VB<1>>VB<2>. Whether or not the electrons generated by the photoelectric conversion in the semiconductor layer 7 become signal electric charges is determined according to only the position (that is a wavelength of incident light) at which the electrons are generated, and the spectral sensitivity characteristic can be controlled according to the change of VB.
JP10034480A 1980-07-22 1980-07-22 Solid state image pick up device Pending JPS5724575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10034480A JPS5724575A (en) 1980-07-22 1980-07-22 Solid state image pick up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10034480A JPS5724575A (en) 1980-07-22 1980-07-22 Solid state image pick up device

Publications (1)

Publication Number Publication Date
JPS5724575A true JPS5724575A (en) 1982-02-09

Family

ID=14271493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10034480A Pending JPS5724575A (en) 1980-07-22 1980-07-22 Solid state image pick up device

Country Status (1)

Country Link
JP (1) JPS5724575A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150365A (en) * 1984-12-25 1986-07-09 Toshiba Corp Semiconductor integrated circuit device
JP2005236922A (en) * 2004-02-23 2005-09-02 Olympus Corp Imaging device, driving method for imaging device, and driving program therefor
JP2010022014A (en) * 2009-08-28 2010-01-28 Olympus Corp Imaging apparatus, driving method for imaging apparatus, and driving program therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150365A (en) * 1984-12-25 1986-07-09 Toshiba Corp Semiconductor integrated circuit device
JP2005236922A (en) * 2004-02-23 2005-09-02 Olympus Corp Imaging device, driving method for imaging device, and driving program therefor
JP2010022014A (en) * 2009-08-28 2010-01-28 Olympus Corp Imaging apparatus, driving method for imaging apparatus, and driving program therefor

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