CN208225881U - A kind of back side illumination image sensor - Google Patents
A kind of back side illumination image sensor Download PDFInfo
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- CN208225881U CN208225881U CN201820917098.0U CN201820917098U CN208225881U CN 208225881 U CN208225881 U CN 208225881U CN 201820917098 U CN201820917098 U CN 201820917098U CN 208225881 U CN208225881 U CN 208225881U
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Abstract
The utility model relates to a kind of back side illumination image sensors, including substrate, photodiode and the first conduction type separation layer；Photodiode is set in substrate, and the first conduction type separation layer is arranged between photodiode and the front surface of substrate；The high concentration impurities area with the second conduction type heavy doping is additionally provided in substrate, gate electrode is provided in substrate front surface between high concentration impurities area and photodiode, gate electrode extends in the substrate front surface of corresponding first conduction type separation layer, the corresponding covering photodiode of gate electrode, the front surface of substrate is additionally provided with dielectric layer and conductor layer, is provided with light-absorption layer in dielectric layer；The back surface of substrate is provided with insulating layer and fixed charge layer.The technical solution of the utility model provides a kind of back side illumination image sensor, reduces dark current, and can omit be used to form back pinning layer ion implantation process and laser anneal process, and using light-absorption layer absorb from photodiode transmitted through come light.
Description
Technical field
The utility model relates to a kind of technical field of imaging sensor more particularly to a kind of back side illumination image sensors.
Background technique
Imaging sensor is the semiconductor devices for converting optical signalling to electric signal, and imaging sensor includes for photosensitive
Photodiode and logic circuit for converting the light sensed to electric signal.
Backside-illuminated sensor is exactly by the structure inside element in place of maximum optimization compared with traditional positive illuminated sensor
It changes, i.e., photosensitive element is turned into direction, allow luminous energy to enter from the back side direct projection of product, avoid in traditional photoreceptor configuration
In, light will receive the influence of other elements in circuit, so that its induction sensitivity is improved, however, back side illumination image senses
There are larger dark current in device, dark current can mix in signal code when imaging sensor works, cause signal interference, lead
Cause image sensor performance decline.
In addition, back side illumination image sensor may include the back pinning layer that is arranged in the back surface of substrate to form pinning light
Electric diode, back pinning layer can be by ion implantation process formation and then after executing thickness of the process of lapping to reduce substrate
It is activated by laser anneal process.And light is by being that lens jacket enters photodiode, the light of part longer wavelength
Understand reach throught photodiode, these transmitted lights understand reflected light electric diode in front-end circuit layer again, since transmitted light is in circuit
The reflection angle of layer is different, these reflected lights are possible to that adjacent photodiode can be reflected into, to cause adjacent pixel list
The crosstalk of signal between member, ultimately causes image sharpness decline, and quality is deteriorated.
Utility model content
Technical problem to be solved in the utility model is how to provide a kind of back side illumination image sensor, reduces inside
Dark current, and can omit be used to form back pinning layer ion implantation process and laser anneal process, and utilize light-absorption layer
It absorbs from photodiode transmitted through the light come, reduces transmitted ray and be reflected to the chance of other pixels, to reduce phase
Mutual crosstalk between adjacent pixel.
The technical solution that the utility model solves above-mentioned technical problem is as follows:
A kind of back side illumination image sensor, including the substrate with the first conduction type, the light with the second conduction type
Electric diode and the first conduction type separation layer；
The photodiode is set in the substrate, and the first conduction type separation layer is arranged in the photoelectricity two
Between pole pipe and the substrate front surface；
The high concentration impurities area with the second conduction type heavy doping, the high concentration impurities are additionally provided in the substrate
Area and the photodiode interval are arranged；
Gate electrode, the grid are provided in substrate front surface between the high concentration impurities area and the photodiode
Electrode extends in the substrate front surface of corresponding first conduction type separation layer, the corresponding covering photodiode of gate electrode, described
Gate electrode includes gate oxide, grid layer and grid curb wall；
The front surface of the substrate is additionally provided with dielectric layer and conductor layer, is provided with light-absorption layer in the dielectric layer；
The back surface of the substrate is provided with insulating layer and fixed charge layer.
Based on the above technical solution, the utility model can also do following improvement:
It further, further include the back pinning layer with the first conduction type, the back pinning layer is arranged in the photoelectricity
Between diode and the back surface of the substrate.
Further, it is provided with second insulating layer on the fixed charge layer, passivation is provided in the second insulating layer
Layer, filter membranous layer and microlens layer are disposed on the passivation layer.
Further, device isolated area is additionally provided on the substrate and be surrounded on the periphery of the photodiode.
Further, first conduction type is that the second conduction type is N-type for p-type；First conduction type is N-type
When, the second conduction type is p-type.
Further, the dielectric layer and light-absorption layer are structure as a whole.
Further, the light-absorption layer material is carbon or chromium trioxide.
Further, the material of the light-absorption layer is graphite.
Compared with prior art, the utility model has the beneficial effects that gate electrode is extended to and is covered by the utility model product
Substrate front surface right above lid photodiode, so that the substrate front surface right above photodiode is prevented to be etched, because
This, the substrate front surface right above photodiode is less prone to defect, so that it is effectively prevent the generation of dark current, the dress of setting
Isolated area is set, separates photodiode between each other, prevents signal cross-talk.
The light-absorption layer is absorbed from photodiode transmitted through the light come, is thus reduced transmitted ray and is reflected into other light
The chance of electric diode reduces the mutual crosstalk between light adjacent pixel.
Fixed charge layer can form charge accumulation region in the back surface part of substrate, and charge accumulation region can be used as carrying on the back pinning
Layer, it is convenient to omit be used to form the ion implantation process and laser anneal process of conventional use of back pinning layer, significantly reduce back
The manufacturing cost of illuminated image sensor.
Detailed description of the invention
Fig. 1 is the utility model schematic diagram of product structure；
Fig. 2 is that the utility model product is equipped with back pinning schematic diagram of a layer structure.
In attached drawing, parts list represented by the reference numerals are as follows:
1, substrate, 2, photodiode, the 3, first conduction type separation layer, 4, high concentration impurities area, 5, gate electrode, 51,
Gate oxide, 52, grid layer, 53, grid curb wall, 6, dielectric layer, 7, conductor layer, 8, light-absorption layer, 9, insulating layer, 10, fixed electricity
Lotus layer, 11, back pinning layer, 12, second insulating layer, 13, passivation layer, 14, filter membranous layer, 15, microlens layer, 16, device isolation
Area, 17, charge accumulation region.
Specific embodiment
The principles of the present invention and feature are described below in conjunction with attached drawing, example is served only for explaining that this is practical
It is novel, it is not intended to limit the scope of the utility model.
As shown in Figure 1, a kind of back side illumination image sensor, including with the first conduction type substrate 1, have second to lead
The photodiode 2 of electric type and the first conduction type separation layer 3；
The photodiode 2 is set in the substrate 1, and the first conduction type separation layer 3 is arranged in the light
Between 1 front surface of electric diode 2 and the substrate；
The high concentration impurities area 4 with the second conduction type heavy doping is additionally provided in the substrate 1, the high concentration is miscellaneous
Matter area 4 and the photodiode 2 interval are arranged；
Gate electrode 5, institute are provided in 1 front surface of substrate between the high concentration impurities area 4 and the photodiode 2
It states gate electrode 5 to extend in 1 front surface of substrate of corresponding first conduction type separation layer 3, corresponding covering two pole of photoelectricity of gate electrode 5
Pipe 2, the gate electrode 5 include gate oxide 51, grid layer 52 and grid curb wall；
The front surface of the substrate 1 is additionally provided with dielectric layer 6 and conductor layer 7, is provided with light-absorption layer 8 in the dielectric layer 6；
The back surface of the substrate 1 is provided with insulating layer 9 and fixed charge layer 10.
Substrate 1 with the first conduction type, the photodiode 2 with the second conduction type, for example, the substrate of N-type,
Photodiode 2 can be formed in the p type impurity area in substrate 1.
Insulating layer 9 may include silica or silicon oxynitride, and it is tired that fixed charge layer 10 can form charge in back surface part
Product area 17, charge accumulation region 17 can be used as carrying on the back pinning layer 11.Such as fixed charge layer 10 can be the positive fixation with positive charge
Charge layer in this case can be by the positive fixed charge layer in the back surface part of substrate 1, i.e., in 2 He of photodiode
Electronics accumulation layer is formed between the back surface of substrate 1 or below the back surface of substrate 1, and electronics accumulation layer can be used as N-type
Pinning layer is carried on the back, specifically, the positive charge of fixed charge layer 10 can form negatively charged shallow richness in the back surface part of substrate 1
Minority carrier sub-district can be used as N-type back pinning layer, and fixed charge layer 10 may include zirconium oxide, hafnium silicon oxide, hafnium silicon nitrogen oxygen
Compound or silicon nitride.
Alternatively, the substrate of p-type, photodiode 2 include N-type impurity area, and fixed charge layer 10 can be negative fixation
Charge layer, creation can be used as p-type back pinning layer charge accumulation region, negative fixed charge layer packet in the back surface part of substrate 1
Include hafnium oxide, nitrogen oxidation hafnium, aluminium oxide, aluminum oxynitride or hafnium aluminum ox nitride.
It can be omitted the ion implantation process and laser anneal process for being used to form conventional use of back pinning layer 11, photoelectricity
Diode 2 can be bigger, and due to not executing injection on photodiode 2, the tail distribution for overcoming injection profile is associated
Unexpected or unexpected injection problem of the dopant into photodiode 2, therefore filling out for photodiode 2 can also be improved
Fill the factor.
The first conduction type separation layer 3 is made between 1 front surface of photodiode 2 and substrate, for example, when using p-type
When photodiode 2, the first conduction type of N-type separation layer 3 can be made between 1 front surface of photodiode 2 and substrate,
In addition, high concentration impurities area 4 can be formed close to front surface portion in substrate 1, it can be with photodiode 2 separatedly
High concentration impurities area 4 is set, forms gate electrode 5 in the front surface of substrate 1, gate electrode 5 includes gate oxide 51, grid layer 52
And grid curb wall, grid oxic horizon are formed in the front surface of substrate 1, grid layer 52 is formed in 51 surface of gate oxide, grid
Nan Qiang is formed in the side of gate oxide 51 and grid layer 52, and the material of gate oxide 51 can be silica, silicon nitride, grid
The material that the material of layer 52 can be polysilicon perhaps metal material grid curb wall is silica or silicon oxynitride, preferably in fact
It applies in example, grid oxic horizon uses polysilicon using silica, grid layer 52, and grid curb wall uses silicon nitride.
The corresponding top for being covered on photodiode 2 of gate electrode 5, due in 1 front surface of substrate of 2 top of photodiode
Side forms the first conduction type separation layer 3, therefore gate electrode 5 corresponds to the first conduction type separation layer 3 and high concentration is miscellaneous
Region is formed in 1 upper surface of substrate between matter area 4 and the photodiode 2, due to gate electrode 5 be located at the first conduction type every
The top of absciss layer 3, therefore, in 5 forming process of gate electrode, the various etch process of progress will not be to 2 top of photodiode
1 front surface of substrate be etched, that is, 1 front surface of substrate where the first conduction type separation layer 3 not will receive etching, can
See that gate electrode 5 can reduce the defect of gate electrode 5 corresponding substrate 1 and 51 interface of gate oxide, therefore, the part of substrate 1
Front surface is not in defect, causes imaging sensor to generate dark electricity so as to prevent from occurring because of the part of the surface defect
Stream, the performance of entire sensor are improved.
Preferably, device isolated area 16 is additionally provided on the substrate 1 and be surrounded on the periphery of the photodiode 2.
Device isolated area 16 can separate photodiode 2 with peripheral region, so that noise caused by peripheral region
It is isolated in except photodiode 2, to improve image quality.
The front surface of the substrate 1 is also disposed with dielectric layer 6 and conductor layer 7, dielectric layer 6 include the first dielectric layer and
Second dielectric layer is provided with light-absorption layer 8 in the first dielectric layer of 1 front surface of substrate；The light-absorption layer 8 is for absorbing from base
Transmitted through the light come, the light-absorption layer 8 is placed in the first dielectric layer plate 1, and the light-absorption layer 8 can be with the first dielectric layer and the
Two dielectric layers are structure as a whole, i.e., the described dielectric layer 6 is also constituted using light absorbent, to make the existing insulation of the dielectric layer 6
Have the function of that extinction, the area of the cross section of the light-absorption layer 8 are not less than 2 cross section of photodiode while function again
Area.The material of the light-absorption layer 8 is graphite, carbon or chromium trioxide.Photodiode 2 is formed in the second dielectric layer
Multiple conductor layers 7 of electrical connection, conductor layer 7 can be made of aluminium, copper etc., and dielectric layer 6 can be by silica or other insulating materials
It is made.
Preferably, it is provided with second insulating layer 12 on the fixed charge layer 10, is provided in the second insulating layer 12
Passivation layer 13 is disposed with filter membranous layer 14 and microlens layer 15 on the passivation layer 13.
Back side illumination image sensor can be charge-coupled image sensor or complementary metal oxide semiconductor figure
As sensor, back side illumination image sensor can be 3T, 4T or 5T type layout structure.
Substrate 1 includes silicon carbide, GaAs, indium arsenide, indium phosphide, germanium silicon, silicon germanium carbide, gallium arsenide phosphide, squama indium gallium
One or more of any combination, it also may include the semiconductor substrate of epitaxial layer that substrate 1, which can also be silicon substrate 1,
1 or silicon-on-insulator substrate 1.
Second insulating layer 12 can be formed on fixed charge layer, can form passivation layer 13 in second insulating layer 12, be passivated
Filter membranous layer 14 and microlens layer 15 are formed on layer 13.
As shown in Fig. 2, further including the back pinning layer with the first conduction type in another preferred embodiment of the utility model
11, the back pinning layer 11 is arranged between the photodiode 2 and the back surface of the substrate 1.
The back pinning layer 11 with the first conduction type, back can be formed between photodiode 2 and the back surface of substrate 1
Pinning etc. can be N-type high concentration impurities area, in this case, can be accumulated in back pinning layer 11 by fixed charge layer 10
Electronics can enhance back pinning layer 11 significantly, and particularly, back pinning layer 11 can form before photodiode 2 and can be by
Rapid thermal process activation.
The production method of back side illumination image sensor
Device isolated area 16 is formed in the front surface portion of substrate 1 to limit active area, substrate 1 may include silicon substrate and
The epitaxial layer being formed on can form the first kind on substrate 1, for example, the epitaxial layer of N-type, alternatively, substrate 1 are N
Type substrate can omit epitaxial layer, meanwhile, device isolated area 16 can be formed by shallow trench isolation (STI) process.
The photodiode 2 with the second conduction type is formed in substrate 1, for example, P can be formed in N-type epitaxy layer
Type photodiode, particularly, p-type photodiode can be the p type impurity area formed by ion implantation process,
The first conduction type separation layer 3 can be formed between photodiode 2 and the front surface of substrate 1, infused using ion
Enter technique to be formed in 1 front surface implanting impurity ion of substrate, and the ion doping concentration of the first conduction type separation layer 3 is greater than base
One or two order of magnitude of 1 doping concentration of plate, such as: it can be with formation N-type separation layer, the first conductive-type on p-type photodiode
Type separation layer 3 can prevent the electric current as caused by 1 front surface defect of substrate to a certain extent, to keep photodiode 2 defeated
Information is more accurate out, and the image of generation is undistorted.
It can be spaced apart in substrate 1 close to previous section with photodiode 2, form high concentration impurities area 4, such as: it can
Formation p-type high concentration impurities area in the front surface portion of substrate 1 is opened in 2 lateral separation of p-type photodiode.
In 1 front surface of substrate between high concentration impurities area 4 and the photodiode 2 and in the first conductive isolation layer
1 front surface of substrate on form gate electrode 5, first pass through thermal oxidation technology and form layer of oxide layer, it is then quiet in oxide layer
One layer of polysilicon, then by crystal silicon layer formed pattern words photoetching layer, using colored photoresist as mask, using dry method
Etching or wet etching polysilicon layer and oxide layer, until forming gate oxide 51 and covering the grid layer of gate oxide 51
52, later, spacer material layer can be formed, then passes through dry etching by physical gas-phase deposition, chemical vapor deposition process
The etched side walling bed of material forms grid curb wall.Gate electrode 5 is extended into 1 front surface of substrate right above covering photodiode 2,
To prevent 1 front surface of substrate right above photodiode 2 to be etched in subsequent etching technics, therefore, two pole of photoelectricity
1 front surface of substrate right above pipe 2 is less prone to defect, so that it is effectively prevent the generation of dark current, the device isolated area of setting
16, it separates photodiode 2 between each other, prevents signal cross-talk.
In the front surface of substrate 1 and dielectric layer 6 and conductive layer can also be formed on gate electrode, equally passes through thermal oxidation technology
Or semiconductor technology deposition production, deposition form the first dielectric layer after the front surface of substrate 1, flatening process and are situated between first
Departing from substrate 1, upper deposition forms light-absorption layer 8 to electric layer on one side, after flatening process again depositing second dielectric layer in light-absorption layer 8,
By mask, the relevant region of image conversion, and multiple through-holes are etched into the second dielectric layer, and conductive by deposition in through-holes
Material forms conductive column, hereafter the corresponding formation conductive layer in the second dielectric layer 6 can be correspondingly formed the conductive layer knot of multilayer
Structure.
Back-grinding process is executed, such as: chemistry and/or mechanical polishing or etching process are to reduce the thickness of substrate 1, example
Such as: silicon substrate 1 can be removed by back-grinding process, after executing back-grinding process, executable wet etch process is with from substrate 1
Back surface removes pollutant.
Insulating layer 9 can be formed on the back surface of substrate 1, and can then form fixed charge layer 10 on insulating layer 9, absolutely
Edge layer 9 may include silicon oxide or silicon nitride, and fixed charge layer 10 may include zirconium oxide, hafnium silicon oxide, hafnium silicon nitrogen oxides
Or silicon nitride, with positive charge.
Alternatively, when using p-type epitaxial layer and N-type photodiode, negative fixed charge can be formed on insulating layer 9
Layer, negative fixed charge layer may include hafnium oxide, nitrogen oxidation hafnium, aluminium oxide, aluminum oxynitride or hafnium aluminum ox nitride, with negative electricity
Lotus.
Second insulating layer 12 can be formed on fixed charge layer 10, and then can form passivation layer in second insulating layer 12
13, filter membranous layer 14 and microlens layer 15.
After forming the first conduction type separation layer 3, the first conductive-type can be formed in substrate 1 by ion implantation process
The back pinning layer 11 of type, for example, N-type back pinning layer can be formed in substrate 1 by ion implantation process, it can be by rapid thermal process
Activate N-type back pinning layer, p-type photodiode and N-type separation layer.
Pinning layer can be carried on the back by back-grinding process exposure N-type, in detail, back-grinding process can be executed until exposure N-type
Until carrying on the back pinning layer, and insulating layer 9 and fixed charge layer 10 are sequentially formed on the N-type back pinning layer that can be exposed, it can be in N-type
It carries on the back and forms insulating layer 9 on the back surface of pinning layer 11.After forming photodiode 2 in substrate 1, formed on 1 back surface of substrate
Insulating layer 9 and fixed charge layer 10 can form charge accumulation by fixed charge layer 10 between photodiode 2 and insulating layer 9
Area 17 can be used as carrying on the back pinning layer 11, as a result, it is possible to omit the ion implantation process for being used to form conventional back pinning layer 11
And laser anneal process, and therefore can significantly reduce the manufacturing cost of back side illumination image sensor.
In addition, be formed as relatively thin charge accumulation region 17, can relative increase photodiode 2 size, can show
The fill factor of the improvement photodiode 2 of work.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all practical at this
Within novel spirit and principle, any modification, equivalent replacement, improvement and so on should be included in the guarantor of the utility model
Within the scope of shield.
Claims (8)
1. a kind of back side illumination image sensor, which is characterized in that including the first conduction type separation layer (3), there is the first conduction
The substrate (1) of type and photodiode (2) with the second conduction type；
The photodiode (2) is set in the substrate (1), and the first conduction type separation layer (3) is arranged described
Between photodiode (2) and the front surface of the substrate (1)；
It is additionally provided with the high concentration impurities area (4) with the second conduction type heavy doping in the substrate (1), the high concentration is miscellaneous
Matter area (4) and the photodiode (2) interval are arranged；
Gate electrode is provided in substrate (1) front surface between the high concentration impurities area (4) and the photodiode (2)
(5), the gate electrode (5) extends in substrate (1) front surface of corresponding first conduction type separation layer (3), and gate electrode (5) is right
It should cover photodiode (2), the gate electrode (5) includes gate oxide (51), grid layer (52) and grid curb wall (53)；
The front surface of the substrate (1) is additionally provided with dielectric layer (6) and conductor layer (7), is provided with extinction in the dielectric layer (6)
Layer (8)；
The back surface of the substrate (1) is provided with insulating layer (9) and fixed charge layer (10).
2. a kind of back side illumination image sensor according to claim 1, which is characterized in that further include that there is the first conductive-type
The back pinning layer (11) of type, back surface of back pinning layer (11) setting in the photodiode (2) and the substrate (1)
Between.
3. a kind of back side illumination image sensor according to claim 1, which is characterized in that on the fixed charge layer (10)
Be provided with second insulating layer (12), be provided with passivation layer (13) on the second insulating layer (12), on the passivation layer (13) according to
It is secondary to be provided with filter membranous layer (14) and microlens layer (15).
4. a kind of back side illumination image sensor according to claim 1, which is characterized in that also set up on the substrate (1)
There is device isolated area (16) and is surrounded on the periphery of the photodiode (2).
5. a kind of back side illumination image sensor according to claim 1, which is characterized in that first conduction type is P
Type, the second conduction type are N-type；When first conduction type is N-type, the second conduction type is p-type.
6. a kind of back side illumination image sensor according to claim 1, which is characterized in that the dielectric layer (6) and extinction
Layer (8) is structure as a whole.
7. a kind of back side illumination image sensor according to claim 1, which is characterized in that the material of the light-absorption layer (8)
For carbon or chromium trioxide.
8. a kind of back side illumination image sensor according to claim 7, which is characterized in that the material of the light-absorption layer (8)
For graphite.
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| CN201820917098.0U CN208225881U (en) | 2018-06-13 | 2018-06-13 | A kind of back side illumination image sensor |
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| CN201820917098.0U CN208225881U (en) | 2018-06-13 | 2018-06-13 | A kind of back side illumination image sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582439A (en) * | 2020-12-29 | 2021-03-30 | 上海集成电路装备材料产业创新中心有限公司 | Backside illuminated image sensor and preparation method |
| TWI740641B (en) * | 2019-09-30 | 2021-09-21 | 台灣積體電路製造股份有限公司 | Image sensor and method for forming image sensor |
-
2018
- 2018-06-13 CN CN201820917098.0U patent/CN208225881U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI740641B (en) * | 2019-09-30 | 2021-09-21 | 台灣積體電路製造股份有限公司 | Image sensor and method for forming image sensor |
| CN112582439A (en) * | 2020-12-29 | 2021-03-30 | 上海集成电路装备材料产业创新中心有限公司 | Backside illuminated image sensor and preparation method |
| CN112582439B (en) * | 2020-12-29 | 2022-07-05 | 上海集成电路装备材料产业创新中心有限公司 | Backside illuminated image sensor and preparation method |
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