CN108933152A - Imaging sensor and forming method thereof - Google Patents
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- CN108933152A CN108933152A CN201810834439.2A CN201810834439A CN108933152A CN 108933152 A CN108933152 A CN 108933152A CN 201810834439 A CN201810834439 A CN 201810834439A CN 108933152 A CN108933152 A CN 108933152A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 33
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- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
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- 239000000463 material Substances 0.000 claims description 14
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- 230000008569 process Effects 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
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- 238000005530 etching Methods 0.000 claims description 7
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- 239000010937 tungsten Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
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- 238000004528 spin coating Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Technical solution of the present invention discloses a kind of imaging sensor and forming method thereof.The forming method of described image sensor includes: offer semiconductor substrate；The first insulating layer is formed on the semiconductor substrate；Patterned photoresist layer is formed on the first insulating layer；Using the patterned photoresist layer as exposure mask, first insulating layer is etched, forms metal grate figure；Second insulating layer is formed in the metal grate pattern side wall and bottom；Full metal layer is filled in the metal grate figure, forms metal grate；Remove the first insulating layer of the second insulating layer and segment thickness on the outside of metal grate.Technical solution of the present invention effectively controls the metal grate critical size and reaches corresponding requirements, further ensures the performance of imaging sensor and the yield of device.
Description
Technical field
The present invention relates to the manufacturing field of semiconductor devices more particularly to imaging sensors and forming method thereof.
Background technique
Imaging sensor receives optical signal from object and converts optical signal into electric signal, and electric signal can be used for by transmitting
Further processing, such as digitizes, then stores in such as memory device of memory, CD or disk, or is used for
Show, print on display etc..Imaging sensor is commonly used in the dress such as digital camera, video camera, scanner, facsimile machine
It sets.
Imaging sensor is usually two types, charge coupling device (CCD) sensor and cmos image sensor (CMOS
Image Sensors, CIS).Compared to ccd image sensor, cmos image sensor has integrated level height, small power consumption, generation
The advantages that at low cost.
Currently, in the manufacturing process of cmos image sensor, after incident light is captured by lenticule, by filter mistake
Filter removes uncorrelated light, forms monochromatic light, and incident light reaches semiconductor substrate and is absorbed, and generates photo-generated carrier.It is existing
Incident light reaches before semiconductor substrate, it may occur that crosstalk influences imaging effect.Enter for what reduction image sensing device received
The optical crosstalk for penetrating light needs to form metallic grid (Metal Grid) on the surface of semiconductor substrate incident light is isolated；And
To prevent the photo-generated carrier of different zones to be diffused into adjacent area, need to form deep trench isolation in the inside of semiconductor substrate
(Deep Trench Isolation, DTI) structure.
However, the optical crosstalk in order to preferably prevent incident light, it is desirable to which the size of metal grate is the smaller the better.But by
In the limitation of photoresist performance, current process cannot accomplish the size of very little.
Summary of the invention
Technical solution of the present invention technical problems to be solved are to provide a kind of imaging sensor and forming method thereof, avoid light
The limitation of photoresist further decreases metal grate size, increases the effective light absorption area of substrate.
In order to solve the above technical problems, technical solution of the present invention provides a kind of forming method of imaging sensor, comprising: mention
For semiconductor substrate；The first insulating layer is formed on the semiconductor substrate；It is formed on the first insulating layer patterned
Photoresist layer；Using the patterned photoresist layer as exposure mask, first insulating layer is etched, forms metal grate figure；?
Second insulating layer is formed on the metal grate pattern side wall and bottom；Full metal layer, shape are filled in the metal grate figure
At metal grate；Remove the first insulating layer of the second insulating layer and segment thickness on the outside of metal grate.
Optionally, first insulating layer and the material of second insulating layer are silicon oxide or silicon nitride.
Optionally, the method for forming the second insulating layer is atom layer deposition process.
Optionally, the method for forming first insulating layer is chemical vapor deposition process.
Optionally, before filling metal layer further include: form barrier layer over the second dielectric.
Optionally, the material of the barrier layer is titanium nitride.
Optionally, the technique for forming the barrier layer is chemical vapor deposition process.
Optionally, the material of the metal layer is tungsten or aluminium.
Optionally, the technique for filling the metal layer is chemical vapor deposition process or physical gas-phase deposition.
Optionally, first insulating layer is being etched, when forming metal grate figure, metal grate figure bottom is surplus
First insulating layer of remaining segment thickness.
Optionally, the critical size of the metal grate is 10 nanometers~60 nanometers.
Technical solution of the present invention additionally provides a kind of imaging sensor, comprising: semiconductor substrate；First insulating layer is formed
In in the semiconductor substrate；Metal grate is located on first insulating layer；Second insulating layer is located at the metal grate
On bottom and first insulating layer.
Compared with prior art, technical solution of the present invention has the advantages that
It is initially formed the first insulating layer on a semiconductor substrate, then forms metal grate figure in the first insulating layer,
Second insulating layer is formed on metal grate pattern side wall and bottom, so that the critical size for the metal grate that subsequent filling is formed is enough
It is small, effectively control the metal grate critical size and reach corresponding requirements, further ensure imaging sensor performance and
The yield of device.In addition, the critical size controllability due to metal grate is good, the usage amount of metal material is reduced, saved
Cost.
Secondly as photoresist layer is not direct definition metal grate figure, avoid since photoresist layer figure is high wide
Photoresist layer caused by than big such as easily collapses at the risks.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of imaging sensor；
Fig. 2 to Fig. 9 is the corresponding structural schematic diagram of each step of imaging sensor forming method in the embodiment of the present invention.
Specific embodiment
In the manufacturing process of existing imaging sensor, for the optics for reducing the incident light that image sensing device receives
Crosstalk needs to form metal grate on the surface of semiconductor substrate.
Specifically, the imaging sensor that can be formed with reference to prior art shown in FIG. 1.
Referring to Fig.1, semiconductor substrate 10 is provided, discrete photodiode 20, institute are formed in the semiconductor substrate
It states and is isolated between discrete photoelectric diode 20 by deep trench isolation structure 30, the depth of the deep trench isolation structure 30
It is deeper than the photodiode 20, to obtain better isolation effect, avoid that photoproduction load occurs between different pixels region
The problem of stream diffusion.
It then proceedes to be formed with reference to Fig. 1 on the surface of the semiconductor substrate 10 with silicon oxide or silicon nitride or both group
It is combined into the interlayer dielectric layer 40 of material；Metal layer 50 and insulating layer 60 and photoresist are sequentially formed on the interlayer dielectric layer 40
Layer 70；After patterning photoresist layer, using photoresist layer as exposure mask, insulating layer 60, metal layer 50 are performed etching, and then formed
Metal grate.
The present inventor has found after study, with constantly becoming smaller for process node, the critical size of metal grate
(Critical Dimension, CD) also constantly reduces, therefore during photoresist layer defines metal grate figure, due to
It is undersized, cause the depth-width ratio of photoresist layer very big, is easy to happen photoresist layer and collapses；And it will limit metal grate
Size cannot develop toward the direction of smallizationer, the critical size minimum of existing metal grate can only accomplish 120 rans.
To solve the technical problem, the present invention provides a kind of forming method of image sensor structure, serves as a contrast in semiconductor
Be initially formed the first insulating layer on bottom, then form metal grate figure in the first insulating layer, in metal grate pattern side wall and
Second insulating layer is formed on bottom, so that the critical size for the metal grate that subsequent filling is formed is sufficiently small, and photoreceptor in substrate
Effective light absorption area of part increases, and improves the performance of imaging sensor and the yield of device.
Technical solution of the present invention is described in detail below with reference to embodiment and attached drawing.
Fig. 2 to Fig. 9 is the corresponding structural schematic diagram of each step of imaging sensor forming method in the embodiment of the present invention.
With reference to Fig. 2, semiconductor substrate 110 is provided, forms discrete photodiode in the semiconductor substrate 110
120；Deep trench isolation structure 130 is formed in the semiconductor substrate 110, the deep trench isolation structure 130 is located at photoelectricity
Between diode 120, and the depth of the deep trench isolation structure 130 is deeper than the photodiode 120, to obtain more preferable
Isolation effect, avoid the problem that between different pixels region occur photo-generated carrier diffusion；In the semiconductor substrate 110
Surface forms the first insulating layer 140, and first insulating layer 140 covers the photodiode 120 and the deep trench isolation
Structure 130.
In the present embodiment, the semiconductor substrate 110 can be silicon substrate or the material of the semiconductor substrate 110
It can also be germanium, SiGe, silicon carbide, GaAs or gallium indium, the semiconductor substrate 110 can also be the silicon on insulator
Germanium substrate on substrate or insulator, or growth have the substrate of epitaxial layer.
It is sensor devices in the photodiode 120, and the optical signal received is converted into telecommunications in the present embodiment
Number.In order to meet the semiconductor substrate 110 overall thickness thinning requirement, usual each photodiode 120 is in institute
It states the position in semiconductor substrate 110 and lies substantially in same depth.
In the present embodiment, the technique for forming the deep trench isolation structure 130 is as follows: in the semiconductor substrate 110
Surface forms photoresist layer；Graphical photoresist layer defines deep trench isolation figure；It is to cover with patterned photoresist layer
Film, along semiconductor substrate 110 described in deep trench isolation pattern etching, to obtain deep trench；The photoresist layer is removed, is then existed
Insulation material layer is formed in the semiconductor substrate 110, and the insulation material layer fills the full deep trench；To insulating materials
Layer is planarized, until exposing the semiconductor substrate 110, forms deep trench isolation structure 130.
Wherein, the insulation material layer may include silicon oxide or silicon nitride.
In other embodiments, resistance can be formed in the zanjon groove sidewall and bottom between fill insulant layer
Barrier, the problem of further preventing light crosstalk and cross talk of electrons.
In the present embodiment, first insulating layer 140 can be the lamination of silica and silicon nitride, i.e., partly leads prior to described
Body substrate surface forms silicon oxide layer, then forms silicon nitride layer then at silicon oxide layer surface；Or the oxidation for single layer structure
The silicon nitride of silicon or single layer structure.The technique for forming the interlayer dielectric layer 140 can be chemical vapour deposition technique.
Referring to Fig. 3, photoresist layer 150 is formed on first insulating layer 140；After exposure development, graphical institute
State photoresist layer 150.
In the present embodiment, photoresist layer 150 is formed using spin coating mode.
With reference to Fig. 4, it is exposure mask with the photoresist layer 150 after graphical in Fig. 3, etches first insulating layer
140 to remainder thickness first insulating layer 140, formed metal grate figure 160.Then, the photoresist is removed
Layer 150.
In the present embodiment, the technique for etching first insulating layer 140 can be dry etch process.
In the present embodiment, in first insulating layer 140 of the 160 root remaining portion thickness of metal grate figure
Effect is to protect semiconductor substrate surface injury-free.
In the present embodiment, the method for removing the photoresist layer 150 is ashing method.
With reference to Fig. 5, the second insulation is formed in 140 surface of the first insulating layer, 160 side wall of metal grate figure and bottom
Layer 170.
In the present embodiment, the material of the second insulating layer 170 can be silicon oxide or silicon nitride, form described second absolutely
The technique of edge layer 170 can be atom layer deposition process, since atom layer deposition process has fabulous conformality.Described second
The effect of insulating layer 170 is the critical size for further decreasing the metal grate being subsequently formed, and is increased corresponding photosensitive in substrate
Effective light absorption area of the device to incident light.
With reference to Fig. 6, in 170 forming metal layer on surface 180 of second insulating layer, and the metal layer 180 fills full Fig. 5
In the metal grate figure 160 indicated.
In the present embodiment, the material of the metal layer 180 can be tungsten or aluminium etc..When the material of the metal layer 180 is
It can be formed using chemical vapor deposition (Chemical Vapor Deposition, CVD) technique when tungsten, when the metal layer
180 material can be formed when being aluminium using physical gas-phase deposition.
In the present embodiment, is formed before metal layer 180, first can also form non-proliferation on first insulating layer 170
Layer, the effect of the barrier layer are and prevent in 180 forming process of metal layer being subsequently formed gas to silica etc.
The corrosion of dielectric layer.The material of the barrier layer is titanium nitride, and formation process is chemical vapour deposition technique.
With reference to Fig. 7, the metal layer 180 shown in fig. 6 and the second insulating layer 170 are planarized to exposing described first
140 surface of insulating layer forms metal grate 180a.
In the present embodiment, the critical size of the metal grate 180a is 10 nanometers~60 nanometers.
In the present embodiment, the technique of the metal layer 180 and the second insulating layer 170 is planarized as chemically mechanical polishing
Technique.
With reference to Fig. 8, first insulating layer 140 of etching removal segment thickness.
In the present embodiment, used etching technics is wet etching or dry etching.
In the present embodiment, the effect for retaining first insulating layer 140 of segment thickness is in the protection semiconductor lining
10 surface of bottom is injury-free.Retain the thickness of first insulating layer 140 according to actual technological design subject to.
Due to being initially formed first insulating layer 140, then etching forms metal grate in first insulating layer 140
Figure, etched membrane layer define the critical size of metal grate, and can get rid of cannot limit sufficiently small gold using photoresist process
Belong to the limitation of lattice dimensions；The second insulating layer 170 is formed in metal grate figure inner wall, can further reduce gold
Belong to the critical size of grid, and adjusts the critical size of metal grate by the thickness of the increase second insulating layer 170.
In addition, it is not necessary that limit the size of metal grate by photoetching offset plate figure, avoid photoetching offset plate figure due to
Depth-width ratio is big, and leads to the risk collapsed, and ensure that the yield of imaging sensor.
With reference to Fig. 9, the side wall at the side wall of the metal grate 180a and top, second insulating layer 170 forms dielectric layer
190；Filter layer 200 is formed between the metal grate 180a, and lens jacket 210 is formed on the filter layer 200.
In the present embodiment, the material of the dielectric layer 190 can be silica.The technique of the dielectric layer is formed as chemistry
Vapour deposition process.The effect of the dielectric layer 190 is to prevent from the metal layer in the metal grate 180a from diffusing to be subsequently formed
Filter layer in.
The imaging sensor that above-described embodiment is formed, comprising: semiconductor substrate 110；Photodiode 120, is discretely formed
In in the semiconductor substrate 110；Deep trench isolation structure 130 is formed in the semiconductor substrate 110, the deep trench
Isolation structure 130 is between photodiode 120；First insulating layer 140 is formed in the semiconductor substrate 110；Metal
Grid 180a is located on first insulating layer 120；Second insulating layer 170 is located at the bottom the metal grate 180a and described
On first insulating layer 140；Dielectric layer 190, positioned at the side wall of the metal grate 180a and top and second insulating layer 170
Side wall；Filter layer 200, between the metal grate 180a；Lens jacket 210 is located on the filter layer 200.
Although the present invention discloses as above in a preferred embodiment thereof, it is not for limiting the present invention, any ability
Field technique personnel without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this
Inventive technique scheme makes possible variation and modification, therefore, anything that does not depart from the technical scheme of the invention, according to this hair
Bright technical spirit belongs to the technology of the present invention to any simple modifications, equivalents, and modifications made by embodiment of above
The protection scope of scheme.
Claims (12)
1. a kind of forming method of imaging sensor characterized by comprising
Semiconductor substrate is provided；
The first insulating layer is formed on the semiconductor substrate；
Patterned photoresist layer is formed on the first insulating layer；
Using the patterned photoresist layer as exposure mask, first insulating layer is etched, forms metal grate figure；
Second insulating layer is formed in the metal grate pattern side wall and bottom；
Full metal layer is filled in the metal grate figure, forms metal grate；
Remove the first insulating layer of the second insulating layer and segment thickness on the outside of metal grate.
2. the forming method of imaging sensor as described in claim 1, which is characterized in that first insulating layer and the second insulation
The material of layer is silicon oxide or silicon nitride.
3. the forming method of imaging sensor as claimed in claim 2, which is characterized in that the method for forming the second insulating layer
For atom layer deposition process.
4. the forming method of imaging sensor as claimed in claim 2, which is characterized in that the method for forming first insulating layer
For chemical vapor deposition process.
5. the forming method of imaging sensor as described in claim 1, which is characterized in that before filling metal layer further include:
Barrier layer is formed over the second dielectric.
6. the forming method of imaging sensor as claimed in claim 5, which is characterized in that the material of the barrier layer is nitridation
Titanium.
7. the forming method of imaging sensor as claimed in claim 6, which is characterized in that the technique for forming the barrier layer is
Chemical vapor deposition process.
8. the forming method of imaging sensor as described in claim 1, which is characterized in that the material of the metal layer be tungsten or
Aluminium.
9. the forming method of imaging sensor as claimed in claim 8, which is characterized in that fill the technique of the metal layer to change
Learn gas-phase deposition or physical gas-phase deposition.
10. the forming method of imaging sensor as described in claim 1, which is characterized in that etching first insulating layer, shape
When at metal grate figure, first insulating layer of the metal grate figure root remaining portion thickness.
11. the forming method of imaging sensor as described in claim 1, which is characterized in that the critical size of the metal grate
It is 10 nanometers~60 nanometers.
12. a kind of imaging sensor that the method using any one of claim 1~11 is formed characterized by comprising
Semiconductor substrate；
First insulating layer is formed in the semiconductor substrate；
Metal grate is located on first insulating layer；
Second insulating layer is located on the metal grate bottom and first insulating layer.
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| CN201810834439.2A CN108933152A (en) | 2018-07-26 | 2018-07-26 | Imaging sensor and forming method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810834439.2A CN108933152A (en) | 2018-07-26 | 2018-07-26 | Imaging sensor and forming method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335880A (en) * | 2019-07-18 | 2019-10-15 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method and imaging device |
| CN111552090A (en) * | 2019-02-12 | 2020-08-18 | 世界先进积体电路股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN113644082A (en) * | 2021-07-20 | 2021-11-12 | 上海华力集成电路制造有限公司 | Metal grid structure for improving optical interference between CIS pixels and process method |
| US11335717B2 (en) | 2019-03-22 | 2022-05-17 | Vanguard International Semiconductor Corporation | Semiconductor device including light-collimating layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140083748A (en) * | 2012-12-26 | 2014-07-04 | 에스케이하이닉스 주식회사 | Image sensor and method for fabricating the same |
| CN104025256A (en) * | 2011-12-29 | 2014-09-03 | 英特尔公司 | Double patterning lithography techniques |
| CN107170766A (en) * | 2017-06-01 | 2017-09-15 | 武汉新芯集成电路制造有限公司 | The preparation method and back-illuminated cmos image sensors of grating |
| CN107946330A (en) * | 2017-11-17 | 2018-04-20 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
-
2018
- 2018-07-26 CN CN201810834439.2A patent/CN108933152A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104025256A (en) * | 2011-12-29 | 2014-09-03 | 英特尔公司 | Double patterning lithography techniques |
| KR20140083748A (en) * | 2012-12-26 | 2014-07-04 | 에스케이하이닉스 주식회사 | Image sensor and method for fabricating the same |
| CN107170766A (en) * | 2017-06-01 | 2017-09-15 | 武汉新芯集成电路制造有限公司 | The preparation method and back-illuminated cmos image sensors of grating |
| CN107946330A (en) * | 2017-11-17 | 2018-04-20 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111552090A (en) * | 2019-02-12 | 2020-08-18 | 世界先进积体电路股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| US11335717B2 (en) | 2019-03-22 | 2022-05-17 | Vanguard International Semiconductor Corporation | Semiconductor device including light-collimating layer |
| US11637139B2 (en) | 2019-03-22 | 2023-04-25 | Vanguard International Semiconductor Corporation | Semiconductor device including light-collimating layer and biometric device using the same |
| CN110335880A (en) * | 2019-07-18 | 2019-10-15 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method and imaging device |
| CN113644082A (en) * | 2021-07-20 | 2021-11-12 | 上海华力集成电路制造有限公司 | Metal grid structure for improving optical interference between CIS pixels and process method |
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