CN109860219A - Imaging sensor and forming method thereof - Google Patents
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- CN109860219A CN109860219A CN201910286484.3A CN201910286484A CN109860219A CN 109860219 A CN109860219 A CN 109860219A CN 201910286484 A CN201910286484 A CN 201910286484A CN 109860219 A CN109860219 A CN 109860219A
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Abstract
A kind of imaging sensor and forming method thereof, method includes: offer substrate, and the substrate includes pixel region and isolated area, and the pixel region is adjacent with isolated area, and the isolated area surrounds the pixel region；Photosensitive structure is formed in the substrate pixel area；Initial layer is formed on substrate isolated area surface, there is the initial groove for exposing pixel region in the initial layer；The side wall of the initial layer is carried out thinned, to form grid layer on the isolated area surface, and has in the grid layer and expose the groove of pixel region.The method improves the performance of imaging sensor.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is a kind of semiconductor devices for converting optical signal into electric signal.Imaging sensor is divided into complementary gold
Belong to oxide (CMOS) imaging sensor and charge-coupled device (CCD) imaging sensor.Cmos image sensor has technique
Simply, easily with other devices are integrated, small in size, light-weight, small power consumption and it is at low cost the advantages that.Currently, cmos image sensor
Have been widely used for static digital camera, DV, medical photographic device and automobile-used photographic device etc..
Cmos image sensor includes (FSI) imaging sensor and back-illuminated type (BSI) imaging sensor front-illuminated.In back-illuminated
In formula imaging sensor, light is from the back surface incident of imaging sensor on light sensitive diode into imaging sensor, thus by light
Electric energy can be converted into.
Use grid layer isolation filter layer to reduce the crosstalk between adjacent pixel unit in imaging sensor, however as
The raising of device integration, pixel unit density increases with it in imaging sensor, and grid layer size is larger, affects image biography
The performance of sensor.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, to improve imaging sensor
Performance.
In order to solve the above technical problems, the present invention provides a kind of forming method of imaging sensor, comprising: substrate is provided,
The substrate includes pixel region and isolated area, and the pixel region is adjacent with isolated area, and the isolated area surrounds the pixel region；
Photosensitive structure is formed in the substrate pixel area；Initial layer, the initial grid are formed on substrate isolated area surface
There is the initial groove for exposing pixel region in compartment；The side wall of the initial layer is carried out it is thinned, in the isolation
Area surface forms grid layer, and has the groove for exposing pixel region in the grid layer.
Optionally, the forming method of the initial floor and initial groove includes: in the substrate pixel area and isolation
Area surface forms initial material layer；Patterned layer is formed in the initial material surface, the patterned layer is sudden and violent
Expose pixel region initial material layer；Using the patterned layer as initial material layer described in mask etching, until exposure
Substrate surface out, forms initial layer and initial groove, the initial groove expose substrate surface.
Optionally, it is formed before initial material layer, further includes: formed in the substrate pixel area and isolated area surface
Protective layer；The initial material layer is located at the protective layer；The initial groove exposes protective layer.
Optionally, to the initial layer carry out thinned technique include: isotropic wet-etching technology or
Isotropic dry etch process.
Optionally, the pixel region is arranged along first direction, and the first direction is parallel to substrate surface, the grid layer
There is first size in said first direction, the first size is 0.1um~0.15um.
Optionally, the pixel region is arranged along first direction, and the first direction is parallel to substrate surface, the grid layer
There is first size in said first direction, the initial layer has the second size in said first direction, described
Second size and the difference of first size are greater than zero and less than or equal to 0.1um.
Optionally, further includes: form filter layer in the groove；Lens jacket is formed in the filter surfaces.
Optionally, before forming filter layer, barrier layer is formed in the grid layer surface；The filter layer is located at described
Barrier layer surface.
Optionally, the material on the barrier layer includes: silica, silicon nitride, fire sand, nitrogen silicon boride, nitrogen oxidation of coal
Silicon or silicon oxynitride；The barrier layer with a thickness of 300 angstroms~500 angstroms.
Optionally, the substrate includes the first face and the second face；The initial layer is located at the substrate isolated area
First face surface；The forming method of described image sensor further include: isolation structure, institute are formed in the isolated area of the substrate
It states the second face of substrate and exposes the isolation structure；After forming isolation structure, interconnection layer is formed on substrate the second face surface.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In the forming method for the imaging sensor that technical solution of the present invention provides, groove is subsequently used for forming filter layer, uses
It is set to form grid layer and filter layer the space occupied area, thinned, to be subsequently formed filter layer is carried out to grid layer side wall
Area increase, increased by the light of filter layer, so that increase imaging sensor enters light quantity.Meanwhile grid layer is thinned
Afterwards, groove area increases, and the CRA (chief ray angle chief ray angle) for entering the light of pixel region increases, and increases
Imaging sensor enters light quantity.To sum up, so that the performance of imaging sensor gets a promotion.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor；
Fig. 2 to Fig. 7 is the schematic diagram of the section structure of imaging sensor forming process in one embodiment of the invention；
Fig. 8 to Fig. 9 is the schematic diagram of the section structure of imaging sensor forming process in another embodiment of the present invention.
Specific embodiment
As described in background, the performance of the imaging sensor of the prior art is poor.
Fig. 1 is a kind of the schematic diagram of the section structure of image sensor embodiment, referring to FIG. 1, described image sensor packet
Include: multiple pixel units positioned at 100 surface of substrate, the pixel unit include: interconnection layer 130, photosensitive structure 110 and light
Structure, the substrate 100 have opposite the first face and the second face, and the photosensitive structure 110 is located in the substrate 100, institute
It states interconnection layer 130 to be in contact with 100 first face of substrate, the Colony structure is located on 100 second face of substrate, the Colony structure
Including lens jacket 160, filter layer 150 and grid layer 140, lens jacket 160 is located at 150 surface of filter layer, and grid layer 140 is located at phase
Between adjacent filter layer 150；Described image sensor further includes separation layer 120, and the separation layer 120 is located at adjacent pixel unit
Substrate 100 between.
In above-mentioned imaging sensor, the forming method of the grid layer 140 includes: to be formed in 100 second face of substrate
Metal layer；Patterned layer is formed in the layer on surface of metal；Using the patterned layer as exposure mask, the metal layer is etched, is formed
Grid layer.
The material of the patterned layer is photoresist, the limit during graphical formation grid layer by photoresist technique
System, the photoresist mask dimensions of the grid layer 140 are difficult to reduce, therefore the size of the grid layer 140 cannot further subtract
It is small.Grid layer 140 and the occupied spatial area of filter layer 150 are set, therefore 140 size of grid layer is difficult in the case where reducing,
150 area occupied of filter layer between grid layer 140 is limited, and the light-inletting quantity of described image sensor is limited, so as to cause
Imaging sensor forms poor.
The embodiment of the present invention, after forming initial layer, etching removal part initial layer forms grid layer, the grid
Compartment size is smaller, then the groove between grid layer is larger, subsequent that filter layer, the filter layer size are formed in groove
It is larger, the light quantity that enters of imaging sensor is increased, the method improves the performance of imaging sensor.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Fig. 2 to Fig. 7 is the schematic diagram of the section structure of imaging sensor forming process in one embodiment of the invention.
Referring to FIG. 2, providing substrate 200.
The substrate 200 has opposite the first face and the second face, and the substrate 200 is interior including multiple pixel regions and multiple
Isolated area, the isolated area is adjacent with pixel region, and the isolated area surrounds the pixel region.
Photosensitive structure 210 is formed in the pixel region of the substrate 200,200 second face of substrate exposes photosensitive knot
Structure 210.
The pixel region carries out photoelectric conversion for acquiring light, and to light collected.It is described more in the present embodiment
A pixel region is for constituting pixel array.
The substrate 200 is used to provide Process ba- sis for the formation of the photosensitive structure 210.
In the present embodiment, the material of the substrate 200 is monocrystalline silicon.The substrate 200 can also be polysilicon or amorphous
Silicon.The material of the substrate 200 can also be the semiconductor materials such as germanium, SiGe, GaAs.
In other embodiments, the substrate 200 can also be the silicon substrate on insulator, the germanium substrate on insulator
Or the other kinds of substrate such as glass substrate.
The photosensitive structure 210 is for absorbing light and carrying out photoelectric conversion.
In the present embodiment, the photosensitive structure 210 is light sensitive diode.In other embodiments, the photosensitive structure may be used also
To be the component of other realization photoelectric converting functions such as photosensitive metal-oxide-semiconductor.
Initial layer is formed on the 200 isolated area surface of substrate, has in the initial layer and exposes pixel
The initial groove in area.The forming method of the initial layer and initial groove, as shown in Figures 3 to 5.
Referring to FIG. 3, forming initial material layer 202 in 200 pixel region of substrate and isolated area surface.
Specifically, forming initial material layer 202 in 200 pixel region of substrate and isolated area the first face surface.
The initial material layer 202 provides material layer to be subsequently formed initial layer.
The material of the initial material layer 202 includes: metal material；The metal material include: copper, tungsten, nickel,
One of chromium, titanium, tantalum and aluminium or multiple combinations.
In the present embodiment, the material of the initial material layer 202 is tungsten.
In the present embodiment, is formed before initial material layer 202, further include in 200 pixel region of substrate and isolation
Area the first face surface forms protective layer 201, and the initial material layer 202 is located at 201 surface of protective layer.In other realities
It applies in example, does not form the protective layer.
The protective layer 201 is for protecting substrate 200.
The material of the protective layer 201 includes silica, silicon nitride, silicon oxynitride, silicon oxide carbide, carbonitride of silicium or carbon nitrogen
Silica.
In the present embodiment, the material of the protective layer 201 is silica.
The protective layer 201 with a thickness of 300 angstroms~500 angstroms.
The thickness of the protective layer 201 protects the effect of substrate limited less than 300 angstroms；201 thickness of protective layer is greater than
500 angstroms, translucency dies down, and influence to enter photosensitive structure enters light quantity.
It in the present embodiment, is formed before protective layer 201, further includes: form dielectric on 200 second face surface of semiconductor substrate
Antireflection layer, the dielectric antireflective layer are used to increase the transmitance of light.
In other embodiments, dielectric antireflective layer is not formed.
In the present embodiment, further includes: form anti-reflection coating in the dielectric antireflective layer surface, the anti-reflection coating is used
In the reflection for reducing light.
In other embodiments, anti-reflection coating is not formed.
Referring to FIG. 4, forming patterned layer 203, the patterned layer 203 on 202 surface of initial material layer
Expose pixel region initial material layer 202.
In the present embodiment, the material of the patterned layer 203 is photoresist.
The process for forming the patterned layer 203 includes: to form initial figure layer in the 202 surface spin coating of initial material layer
(not shown)；Processing is exposed to the initial figure layer；Development treatment is carried out to the initial figure layer after exposure, removal part is just
Beginning figure layer exposes 202 surface of initial material layer of pixel region, forms the patterned layer 203.
In one embodiment, the patterned layer be hard mask layer, the material of the hard mask layer include: silicon nitride or
Silica.
Referring to FIG. 5, being initial material layer 202 described in mask etching with the patterned layer 203, until exposing
200 surface of substrate, forms initial layer 240 and initial groove 204, the initial groove 204 are located at adjacent initial layer
Between 240, and the initial groove 204 exposes pixel region.
It is initial material layer 202 described in mask etching with the patterned layer 203 in the present embodiment, until exposure
201 surface of protective layer out, forms initial layer 240 and initial groove 204, and the initial groove 204 exposes pixel region guarantor
201 surface of sheath.
It include dry etching work with the technique that the patterned layer 203 is initial material layer 202 described in mask etching
Skill or wet-etching technology.
It is each with the technique that the patterned layer 203 is initial material layer 202 described in mask etching in the present embodiment
The dry etch process of anisotropy.
In the present embodiment, after forming the initial layer 240 further include: the patterned layer 203 is removed, described in removal
The technique of patterned layer 203 is cineration technics.
Referring to FIG. 6, the side wall of initial layer 240 is carried out it is thinned, with the isolated area surface formed grid layer
241, and there is the groove 205 for exposing pixel region in the grid layer 241.
It includes: isotropic wet-etching technology or each for carrying out thinned technique to the side wall of initial layer 240
To the dry etch process of the same sex.
In the present embodiment, carrying out thinned technique to the side wall of initial layer 240 is wet-etching technology, the wet process
The etching liquid of etching is the mixed solution of phosphoric acid, nitric acid, acetic acid and water.
Protective layer 201 is during etching removal part initial layer 240 forms grid layer 241 for protecting substrate
200。
In other embodiments, carrying out thinned technique to the side wall of initial layer 240 is isotropic dry etching
Technique；The gas of the dry etching includes NF3Gas and SiCl4Gas.
The pixel region is arranged in array, and the pixel region is arranged along first direction, and the first direction is parallel to substrate
200 surfaces, the pixel region are also arranged in a second direction, and the second direction is perpendicular to first direction, and second direction is parallel
In 200 surface of substrate.
In the present embodiment, the grid layer 241 has first size in said first direction, and the first size is
0.1um~0.15um.
The initial layer 240 has the second size, second size and first size in said first direction
Difference greater than zero and less than or equal to 0.1um.
After initial layer 240 is thinned, 205 size of groove between grid layer 241 is larger, enters photosensitive structure 210
The CRA (chief ray angle chief ray angle) of light increase, chief ray angle refers to chief ray incident in pixel array
On angle, design, the occupied area of filter layer and the sense of the lens jacket of chief ray angle and pixel region in imaging sensor
The size of photo structure is related.In the case where the size constancy of the design of lens jacket and photosensitive structure is dynamic, filter layer is occupied
Area increases, then the relative area between lens jacket and photosensitive structure increases, and the angle of filter layer is entered through the light after lens jacket
Degree increases, to increase the CRA for entering the light of photosensitive structure 210.Increase imaging sensor enters light quantity, so that figure
As the performance of sensor gets a promotion.
Referring to FIG. 7, forming filter layer 250 in the groove 205 after forming grid layer 241；In the filter layer
250 surfaces form lens jacket 260.
In the present embodiment, it after forming grid layer 241, before forming filter layer 250, is formed on 241 surface of grid layer
Barrier layer 242；The filter layer 250 is located at 242 surface of barrier layer.In other embodiments, the barrier layer is not formed.
The material on the barrier layer 242 include: silica, silicon nitride, fire sand, nitrogen silicon boride, nitrogen silicon oxide carbide or
Silicon oxynitride.
In the present embodiment, the material on the barrier layer 242 is silica.The barrier layer 242 with a thickness of 300 angstroms~
500 angstroms.The thickness on the barrier layer 242 is limited to the protective effect of grid layer 241 less than 300 angstroms；The barrier layer 242
Thickness is greater than 500 angstroms, and the transmitance of light is reduced, then influence photosensitive structure enters light quantity, to influence the property of imaging sensor
Energy.
The barrier layer 242 is for protecting grid layer 241.
The material of the filter layer 250 includes the organic material doped with pigment.The organic material doped with pigment,
Can according to doping pigment difference, selection can by monochromatic light.
Natural light is white light made of the set of multiple color of light, and natural light is after filter layer, only part specific wavelength
Monochromatic light can pass through, to generate specific monochromatic light.
The lens jacket 260 is for assembling light, so that light enters filter layer 250 and photosensitive structure along specific optical path
210。
It is set for forming grid layer and filter layer the space occupied area.240 side wall of initial layer is carried out thinned
Afterwards, the size of the groove 205 is larger.Subsequent that filter layer 250 is formed in groove 205,250 size of filter layer is also larger, leads to
The light of filter layer 250 increases, so that increase imaging sensor enters light quantity, so that the performance of imaging sensor is mentioned
It rises.
Fig. 8 to Fig. 9 is the schematic diagram of the section structure of the imaging sensor forming process of another embodiment of the present invention.
Referring to FIG. 8, provide substrate 300, the substrate 300 include pixel region and isolated area, the pixel region be isolated
Area is adjacent, and the isolated area surrounds the pixel region.
Photosensitive structure 310 is formed in the pixel region of the substrate 300,300 second face of substrate exposes photosensitive knot
Structure 310.
The pixel region carries out photoelectric conversion for acquiring light, and to light collected.It is described more in the present embodiment
A pixel region is for constituting pixel array.
The substrate 300 is used to provide Process ba- sis for the formation of the photosensitive structure 310.
In the present embodiment, the material of the substrate 300 is monocrystalline silicon.The substrate 300 can also be polysilicon or amorphous
Silicon.The material of the substrate 300 can also be the semiconductor materials such as germanium, SiGe, GaAs.
In other embodiments, the substrate 300 can also be the silicon substrate on insulator, the germanium substrate on insulator
Or the other kinds of substrate such as glass substrate.
The photosensitive structure 310 is for absorbing light and carrying out photoelectric conversion.
In the present embodiment, the photosensitive structure 310 is light sensitive diode.In other embodiments, the photosensitive structure may be used also
To be the component of other realization photoelectric converting functions such as photosensitive metal-oxide-semiconductor.
In the present embodiment, the substrate 300 includes the first face and the second face.
Described image sensor forming method further include: isolation structure 320 is formed in the isolated area of the substrate 300,
300 second face of substrate exposes the isolation structure 320；After forming isolation structure 320, in 300 second face of substrate
Surface forms interconnection layer 330.
In the present embodiment, the shallow groove isolation layer 320 is formed before forming initial layer.
In one embodiment, after forming lens jacket, shallow groove isolation layer is formed.
The shallow groove isolation layer 320 realizes the isolation between photosensitive structure 310, prevents from leaking between neighboring photosensitive structure
Electricity.
The material of the shallow groove isolation layer 320 includes silica.
The interconnection layer 330 is for being handled and being transmitted the information of photosensitive structure 310.
The interconnection layer 330 includes plug and multiple layer metal conductor layer, and the material of the metal carbonyl conducting layer is copper.
Referring to FIG. 9, forming initial layer on the 300 isolated area surface of substrate, have in the initial layer
Expose the initial groove of pixel region；The side wall of the initial layer is carried out it is thinned, to be formed on the isolated area surface
Grid layer 241, and there is the groove for exposing pixel region in the grid layer 241.
In the present embodiment, formed before initial layer, further includes: in 300 pixel region of substrate and isolated area first
Face surface forms protective layer 201.
In the present embodiment, after forming grid layer 241, further includes: form filter layer 250 in the groove；In the filter
250 surface of photosphere forms lens jacket 260.
In the present embodiment, after forming grid layer 241, before forming filter layer 250, is formed and hindered on 241 surface of grid layer
Barrier 242；The filter layer 250 is located at 242 surface of barrier layer.
The protective layer 201, grid layer 241, barrier layer 242, filter layer 250 and lens jacket 260 material, structure and shape
At method as described in Fig. 9 and previous embodiment, this will not be repeated here.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of forming method of imaging sensor characterized by comprising
Substrate is provided, the substrate includes pixel region and isolated area, and the pixel region is adjacent with isolated area, and the isolated area packet
Enclose the pixel region；
Photosensitive structure is formed in the substrate pixel area；
Initial layer is formed on substrate isolated area surface, has in the initial layer and exposes the initial of pixel region
Groove；
The side wall of the initial layer is carried out it is thinned, to form grid layer, and the grid layer on the isolated area surface
It is interior that there is the groove for exposing pixel region.
2. the forming method of imaging sensor according to claim 1, which is characterized in that the initial layer and initial
The forming method of groove includes: to form initial material layer in the substrate pixel area and isolated area surface；Described initial
Grid material layer surface forms patterned layer, and the patterned layer exposes pixel region initial material layer；With the figure
Changing layer is initial material layer described in mask etching, until exposing substrate surface, forms initial layer and initial groove,
The initial groove exposes substrate surface.
3. the forming method of imaging sensor according to claim 1, which is characterized in that formed initial material layer it
Before, further includes: protective layer is formed in the substrate pixel area and isolated area surface；The initial material layer is located at the guarantor
Sheath surface；The initial groove exposes the protective layer.
4. the forming method of imaging sensor according to claim 1, which is characterized in that carried out to the initial layer
Thinned technique includes: isotropic wet-etching technology or isotropic dry etch process.
5. the forming method of imaging sensor according to claim 1, which is characterized in that the pixel region is along first direction
Arrangement, the first direction are parallel to substrate surface, and the grid layer has a first size in said first direction, and described the
One having a size of 0.1um~0.15um.
6. the forming method of imaging sensor according to claim 1 or 5, which is characterized in that the pixel region is along first
Direction arrangement, the first direction are parallel to substrate surface, and the grid layer has first size in said first direction, institute
Stating initial layer in said first direction has the second size, and the difference of second size and first size is greater than zero and small
In equal to 0.1um.
7. the forming method of imaging sensor according to claim 1, which is characterized in that further include: in the groove
Form filter layer；Lens jacket is formed in the filter surfaces.
8. the forming method of imaging sensor according to claim 7, which is characterized in that before forming filter layer,
The grid layer surface forms barrier layer；The filter layer is located at the barrier layer surface.
9. the forming method of imaging sensor according to claim 8, which is characterized in that the material packet on the barrier layer
It includes: silica, silicon nitride, fire sand, nitrogen silicon boride, nitrogen silicon oxide carbide or silicon oxynitride；The barrier layer with a thickness of 300
Angstrom~500 angstroms.
10. the forming method of imaging sensor according to claim 1, which is characterized in that the substrate includes the first face
With the second face；The initial layer is located at the first face surface of the substrate isolated area；The formation side of described image sensor
Method further include: isolation structure is formed in the isolated area of the substrate, second face of substrate exposes the isolation structure；Shape
After isolation structure, interconnection layer is formed on substrate the second face surface.
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| CN112366211A (en) * | 2020-11-26 | 2021-02-12 | 武汉新芯集成电路制造有限公司 | Substrate for backside illuminated image sensor and method for manufacturing backside illuminated image sensor |
| CN113451344A (en) * | 2021-07-01 | 2021-09-28 | 武汉新芯集成电路制造有限公司 | Backside illuminated image sensor and method of manufacturing the same |
| CN115241221A (en) * | 2022-09-26 | 2022-10-25 | 合肥晶合集成电路股份有限公司 | Backside illuminated image sensor and manufacturing method thereof |
| CN115241221B (en) * | 2022-09-26 | 2023-01-06 | 合肥晶合集成电路股份有限公司 | Backside illuminated image sensor and manufacturing method thereof |
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Application publication date: 20190607 |