GB1385282A - Iamge pick up devices - Google Patents
Iamge pick up devicesInfo
- Publication number
- GB1385282A GB1385282A GB5901672A GB5901672A GB1385282A GB 1385282 A GB1385282 A GB 1385282A GB 5901672 A GB5901672 A GB 5901672A GB 5901672 A GB5901672 A GB 5901672A GB 1385282 A GB1385282 A GB 1385282A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- charge
- transfer
- wells
- carriers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000969 carrier Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000011159 matrix material Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910001922 gold oxide Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1091—Substrate region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
1385282 Image pick-up devices WESTERN ELECTRIC CO Inc 21 Dec 1972 [23 Dec 1971] 59016/72 Heading H1K An image pick-up device comprises a wafer of photoconductive material, means for producing an array of potential wells at one face of the wafer in which optically generated charge carriers are stored, and at least one charge transfer channel at the opposite face of the wafer to which the stored carriers can be transferred in operation. A typical device consists of a 15Á thick N type wafer, e.g. of silicon having on one surface a layer of silicon oxide covered by a transparent electrode layer of gold or tin oxide. An array of potential wells is provided by constructing the oxide, layer with an array of thinner portions or forming an array of zones of immobile charge, e.g. in the oxide or preferably as P type zones in the silicon, beneath the electrode layer. In operation, with the electrode negative, minority carriers generated in the silicon by light incident on the electrode collect in the potential wells and are periodically transferred to charge transfer channels on the opposite wafer face which may be of the bucket brigade (Fig. 3, not shown) or charge-coupled (Figs. 1 and 4, not shown) type. Transfer is effected by appropriately biasing the field electrodes of the channels to cause diffusion of the carriers, in which case the wafer should be thinner than the diffusion length, or to provide depletion layers extending to the potential wells to produce a drift field, e.g. when using a wafer of GaAs, to speed up transfer. The wells generally form a co-ordinate matrix and are preferably aligned with field electrodes of the channels, though there may be more wells than field electrodes in which case the optical resolution is determined by the spacing of the latter. To facilitate mounting the wafer may have a thicker periphery and be attached by resin or rubber to a ceramic substrate carrying a suitable pattern of conductors. After transfer of the stored charge recharging of the wells continues while the transferred charge is read out by applying scanning voltages to the field electrodes of the channel to transfer it to a detector. The matrix may be scanned a row or a column at a time as described with reference to Figs. 5 and 6 respectively (not shown). Successful operation at low light levels can be achieved by biasing so that impact ionization of the light generated carriers occurs.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21151471A | 1971-12-23 | 1971-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1385282A true GB1385282A (en) | 1975-02-26 |
Family
ID=22787238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5901672A Expired GB1385282A (en) | 1971-12-23 | 1972-12-21 | Iamge pick up devices |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS5547506B2 (en) |
| AT (1) | AT326741B (en) |
| BE (1) | BE793094A (en) |
| CA (1) | CA970864A (en) |
| CH (1) | CH551693A (en) |
| DE (1) | DE2262047C2 (en) |
| ES (1) | ES410300A1 (en) |
| FR (1) | FR2164912B1 (en) |
| GB (1) | GB1385282A (en) |
| IL (1) | IL41127A (en) |
| IT (1) | IT974046B (en) |
| NL (1) | NL7217547A (en) |
| SE (1) | SE386045B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987003388A1 (en) * | 1985-11-26 | 1987-06-04 | Jabali Pty Ltd., | Photo-electric imaging device |
| EP1855321A2 (en) * | 1996-11-01 | 2007-11-14 | The Regents of the University of California | Low-resistivity photon-transparent window attached to photo-senstive silicon detector |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949579A (en) * | 1972-09-14 | 1974-05-14 | ||
| JPS5046033A (en) * | 1973-08-28 | 1975-04-24 | ||
| FR2259438B1 (en) * | 1974-01-24 | 1976-10-08 | Commissariat Energie Atomique | |
| GB1532859A (en) * | 1976-03-30 | 1978-11-22 | Mullard Ltd | Charge coupled circuit arrangements and devices |
| JPS537121A (en) * | 1976-07-09 | 1978-01-23 | Toshiba Corp | Electric charge transfer unit |
| JPS5726481A (en) * | 1980-07-23 | 1982-02-12 | Matsushita Electric Ind Co Ltd | Solid state image pickup device |
| JPS60173239A (en) * | 1984-02-16 | 1985-09-06 | 日鐵建材工業株式会社 | Deck plate for synthetic floor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3700932A (en) * | 1970-02-16 | 1972-10-24 | Bell Telephone Labor Inc | Charge coupled devices |
-
0
- BE BE793094D patent/BE793094A/en not_active IP Right Cessation
-
1972
- 1972-07-06 CA CA146,498A patent/CA970864A/en not_active Expired
- 1972-12-02 ES ES410300A patent/ES410300A1/en not_active Expired
- 1972-12-13 SE SE7216277A patent/SE386045B/en unknown
- 1972-12-13 IT IT54683/72A patent/IT974046B/en active
- 1972-12-19 DE DE2262047A patent/DE2262047C2/en not_active Expired
- 1972-12-20 IL IL41127A patent/IL41127A/en unknown
- 1972-12-21 GB GB5901672A patent/GB1385282A/en not_active Expired
- 1972-12-21 JP JP12777372A patent/JPS5547506B2/ja not_active Expired
- 1972-12-22 NL NL7217547A patent/NL7217547A/xx not_active Application Discontinuation
- 1972-12-22 AT AT1099772A patent/AT326741B/en not_active IP Right Cessation
- 1972-12-22 FR FR7246007A patent/FR2164912B1/fr not_active Expired
- 1972-12-22 CH CH1882672A patent/CH551693A/en not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987003388A1 (en) * | 1985-11-26 | 1987-06-04 | Jabali Pty Ltd., | Photo-electric imaging device |
| US4771183A (en) * | 1985-11-26 | 1988-09-13 | Jabali Pty. Ltd. | Photo-electric imaging device having overlaying row and column electrodes forming discrete, independently addressable areas |
| EP1855321A2 (en) * | 1996-11-01 | 2007-11-14 | The Regents of the University of California | Low-resistivity photon-transparent window attached to photo-senstive silicon detector |
| EP1855321A3 (en) * | 1996-11-01 | 2008-08-06 | The Regents of the University of California | Back-illuminated fully depleted charge coupled device comprising low-resistivity transparent window layer |
Also Published As
| Publication number | Publication date |
|---|---|
| IL41127A0 (en) | 1973-02-28 |
| DE2262047C2 (en) | 1983-03-17 |
| BE793094A (en) | 1973-04-16 |
| AT326741B (en) | 1975-12-29 |
| FR2164912B1 (en) | 1977-04-08 |
| JPS4874190A (en) | 1973-10-05 |
| ES410300A1 (en) | 1975-12-01 |
| CH551693A (en) | 1974-07-15 |
| DE2262047A1 (en) | 1973-07-05 |
| SE386045B (en) | 1976-07-26 |
| CA970864A (en) | 1975-07-08 |
| IT974046B (en) | 1974-06-20 |
| JPS5547506B2 (en) | 1980-12-01 |
| FR2164912A1 (en) | 1973-08-03 |
| NL7217547A (en) | 1973-06-26 |
| IL41127A (en) | 1976-03-31 |
| ATA1099772A (en) | 1975-03-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |