IL41127A - Solid state imaging apparatus employing charge transfer de devices - Google Patents

Solid state imaging apparatus employing charge transfer de devices

Info

Publication number
IL41127A
IL41127A IL41127A IL4112772A IL41127A IL 41127 A IL41127 A IL 41127A IL 41127 A IL41127 A IL 41127A IL 4112772 A IL4112772 A IL 4112772A IL 41127 A IL41127 A IL 41127A
Authority
IL
Israel
Prior art keywords
recited
matrix
wafer
potential
charge
Prior art date
Application number
IL41127A
Other versions
IL41127A0 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IL41127A0 publication Critical patent/IL41127A0/en
Publication of IL41127A publication Critical patent/IL41127A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/386—Substrate regions of field-effect devices of charge-coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Claims (1)

1. CLAIMS Charge transfer imaging apparatus comprising a wafer having a pair of substantially parallel surfaces on opposite sides and a transparent first dielectric layer disposed over one of the characterized by a transparent conductive sheet disposed over the dielectric means in combination the layer and sheet for forming a matrix of potential wells adjacent said one surface in the wafer in response to sufficien applied to said conductive a second dielectric layer disposed over the other of the surfaces a plurality of electrodes disposed over second layer so as to de a charge transfer information channel associated with the surface such that in response to voltages applied to the plurality of electrodes there are formed a plurality of potential wells in the channel adjacent the other the wafer being sufficientl thin tha mobile charge carriers introduced the potential wells associated with the front surface can b e transferre wafer to the potential wells of the charge transfer In channels with the other surface without incurring avalanche breakdown in the Apparatus as recited in Claim characterized in that charge transfe information channel aligned with a ro of the matrix of potential associated the first Apparatus as recited in characterized that thickness of wafer is less a diffusion length the mobile charge In characterized in that the for the of potential wells adjacent the one includes an array of portion of the dielectric with which the conductive sheet apparatus as recited n characterized in tha means the matrix of potential the one a matrix of immobile charge disposed the surface of the Apparatus as recited in claim characterized in that the charge is disposed in the wafer and ad acent the surface Apparatus recited claim characterized in the matrix associated the fron surface includes a plurality of rows and columns of potential a plurality of the information channels are disposed over as recited in claim characterized that the of the matrix are mutually and plurality of information channels are mutually and to Apparatus as recited in claim characterized in information channel includes a plurality electrodes serially disposed over the second layer in a line substantially with f the matrix associated with the front Apparatus as recited by circuit means coupled to for alternately applying thereto a first voltage sufficient form matrix o potential and a icient to release any charge carriers stored in and second circui means couple he electrodes of the channel applying multiphase voltages thereto sufficient effecting charge transfer along said aa recited in claim characterized the second circuit means includes means for to selected electrodes voltages su ficient thereunder potentia extending completely through the the Applicants insufficientOCRQuality
IL41127A 1971-12-23 1972-12-20 Solid state imaging apparatus employing charge transfer de devices IL41127A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21151471A 1971-12-23 1971-12-23

Publications (2)

Publication Number Publication Date
IL41127A0 IL41127A0 (en) 1973-02-28
IL41127A true IL41127A (en) 1976-03-31

Family

ID=22787238

Family Applications (1)

Application Number Title Priority Date Filing Date
IL41127A IL41127A (en) 1971-12-23 1972-12-20 Solid state imaging apparatus employing charge transfer de devices

Country Status (13)

Country Link
JP (1) JPS5547506B2 (en)
AT (1) AT326741B (en)
BE (1) BE793094A (en)
CA (1) CA970864A (en)
CH (1) CH551693A (en)
DE (1) DE2262047C2 (en)
ES (1) ES410300A1 (en)
FR (1) FR2164912B1 (en)
GB (1) GB1385282A (en)
IL (1) IL41127A (en)
IT (1) IT974046B (en)
NL (1) NL7217547A (en)
SE (1) SE386045B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949579A (en) * 1972-09-14 1974-05-14
JPS5046033A (en) * 1973-08-28 1975-04-24
FR2259438B1 (en) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
JPS537121A (en) * 1976-07-09 1978-01-23 Toshiba Corp Electric charge transfer unit
JPS5726481A (en) * 1980-07-23 1982-02-12 Matsushita Electric Ind Co Ltd Solid state image pickup device
US4771183A (en) * 1985-11-26 1988-09-13 Jabali Pty. Ltd. Photo-electric imaging device having overlaying row and column electrodes forming discrete, independently addressable areas
JP4446292B2 (en) * 1996-11-01 2010-04-07 ローレンス バークレイ ラボラトリー Photon sensing element and device using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices

Also Published As

Publication number Publication date
FR2164912A1 (en) 1973-08-03
ATA1099772A (en) 1975-03-15
CA970864A (en) 1975-07-08
DE2262047C2 (en) 1983-03-17
ES410300A1 (en) 1975-12-01
JPS4874190A (en) 1973-10-05
IL41127A0 (en) 1973-02-28
JPS5547506B2 (en) 1980-12-01
DE2262047A1 (en) 1973-07-05
FR2164912B1 (en) 1977-04-08
SE386045B (en) 1976-07-26
NL7217547A (en) 1973-06-26
CH551693A (en) 1974-07-15
GB1385282A (en) 1975-02-26
IT974046B (en) 1974-06-20
AT326741B (en) 1975-12-29
BE793094A (en) 1973-04-16

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