GB1375064A - - Google Patents

Info

Publication number
GB1375064A
GB1375064A GB875672A GB875672A GB1375064A GB 1375064 A GB1375064 A GB 1375064A GB 875672 A GB875672 A GB 875672A GB 875672 A GB875672 A GB 875672A GB 1375064 A GB1375064 A GB 1375064A
Authority
GB
United Kingdom
Prior art keywords
areas
layer
masked
etched
ridges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB875672A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1375064A publication Critical patent/GB1375064A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1375064 Charge coupled devices INTERNATIONAL BUSINESS MACHINES CORP 25 Fob 1972 [29 March 1971] 8756/72 Heading H1K In a charge coupled device comprising a plurality of electrodes separated from the surface of a semi-conductor body by a layer of insulating material, each electrode comprises two areas of materials of different work functions electrically connected together so that when a voltage is applied a multi-level potential well is formed in the body. As shown, an N-type Si substrate 10 is provided with a thick insulating layer of SiO 2 or Si 3 N 4 which is masked and etched to leave thick ridges 11 of insulator, and a thin insulating film 16 is applied to the areas of the surface of the body between the ridges which are to form the charge transport paths. A layer of a first conductive material is applied and masked and etched to leave rows of spaced areas 15 on thin insulating layer 16, the areas 15 in adjacent rows being staggered. A layer of a second conductive material is applied and masked and etched to form tracks 18 which extend at right angles to the ridges 11 between which they overlap the areas 15 of the first material. The first and second conductive materials are selected to have different work functions so that when a voltage pulse is applied an asymmetric potential well is created permitting unidirectional charge transport by means of two-phase shift pulses. The tracks 18 overlap oppositely directed edges of the areas 15 of the first conductive material in adjacent transport paths so that the charge is shifted in opposite directions. Two such paths may be joined at their ends (by refresh circuits if necessary), to form a circulating memory. The first and second conductive materials may be Hf and Pt but a list of other suitable materials together with their work functions is given from which pairs of suitable materials may be selected. The use of the combination of heavily doped Si with Al is mentioned.
GB875672A 1971-03-29 1972-02-25 Expired GB1375064A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12909771A 1971-03-29 1971-03-29

Publications (1)

Publication Number Publication Date
GB1375064A true GB1375064A (en) 1974-11-27

Family

ID=22438441

Family Applications (1)

Application Number Title Priority Date Filing Date
GB875672A Expired GB1375064A (en) 1971-03-29 1972-02-25

Country Status (4)

Country Link
JP (1) JPS5437476B1 (en)
DE (1) DE2209921A1 (en)
FR (1) FR2131992B1 (en)
GB (1) GB1375064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits

Also Published As

Publication number Publication date
FR2131992A1 (en) 1972-11-17
DE2209921B2 (en) 1979-07-12
JPS5437476B1 (en) 1979-11-15
DE2209921C3 (en) 1980-03-20
DE2209921A1 (en) 1972-10-05
FR2131992B1 (en) 1974-06-28

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee