JPS6461070A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6461070A JPS6461070A JP21940687A JP21940687A JPS6461070A JP S6461070 A JPS6461070 A JP S6461070A JP 21940687 A JP21940687 A JP 21940687A JP 21940687 A JP21940687 A JP 21940687A JP S6461070 A JPS6461070 A JP S6461070A
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity
- type
- channel forming
- type high
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To place a capacitor having large change rate of a capacity with respect to a voltage by forming first and second capacity electrodes in contact with a channel forming region, and forming a plurality of capacitors having different threshold voltage values by connecting them in parallel. CONSTITUTION:A P-type low concentration impurity region 3 is formed on a P-type low impurity concentration silicon substrate 1 having an N-type high impurity concentration buried layer 2 on its surface, and channel forming region made of impurity layers 7a-7d of P type in which concentrations are sequentially increased, a source made of an N-type high concentration impurity region 6 in contact with the channel forming region, and a back gate region made of a P-type high concentration impurity region 5 are formed on a section surrounded by an element isolation region 4 made of the trench isolating oxide film of the surface of the region 3. A common gate electrode 9g is formed through the gate insulating film, and a back gate electrode 9b and a source electrode 9s are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21940687A JPS6461070A (en) | 1987-09-01 | 1987-09-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21940687A JPS6461070A (en) | 1987-09-01 | 1987-09-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461070A true JPS6461070A (en) | 1989-03-08 |
Family
ID=16734907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21940687A Pending JPS6461070A (en) | 1987-09-01 | 1987-09-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461070A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003068869A (en) * | 2001-08-24 | 2003-03-07 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same |
| WO2004079828A1 (en) * | 2003-03-03 | 2004-09-16 | Fujitsu Limited | Mos variable capacitive device |
| US7183867B2 (en) | 2003-10-17 | 2007-02-27 | Matsushita Electric Industrial Co., Ltd. | Voltage controlled variable capacitor |
| JP2012028782A (en) * | 1997-09-11 | 2012-02-09 | Telefon Ab L M Ericsson | Electric device |
| JP2016510516A (en) * | 2013-02-19 | 2016-04-07 | クアルコム，インコーポレイテッド | Three-terminal semiconductor device having variable capacitance |
| JP2020155921A (en) * | 2019-03-20 | 2020-09-24 | セイコーエプソン株式会社 | Circuit device, oscillator, electronic equipment and mobile body |
-
1987
- 1987-09-01 JP JP21940687A patent/JPS6461070A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012028782A (en) * | 1997-09-11 | 2012-02-09 | Telefon Ab L M Ericsson | Electric device |
| JP2014039043A (en) * | 1997-09-11 | 2014-02-27 | Telefon Ab L M Ericsson | Electric device |
| JP2003068869A (en) * | 2001-08-24 | 2003-03-07 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same |
| WO2004079828A1 (en) * | 2003-03-03 | 2004-09-16 | Fujitsu Limited | Mos variable capacitive device |
| US7622760B2 (en) | 2003-03-03 | 2009-11-24 | Fujitsu Microelectronics Limited | MOS type variable capacitance device |
| US7183867B2 (en) | 2003-10-17 | 2007-02-27 | Matsushita Electric Industrial Co., Ltd. | Voltage controlled variable capacitor |
| JP2016510516A (en) * | 2013-02-19 | 2016-04-07 | クアルコム，インコーポレイテッド | Three-terminal semiconductor device having variable capacitance |
| JP2020155921A (en) * | 2019-03-20 | 2020-09-24 | セイコーエプソン株式会社 | Circuit device, oscillator, electronic equipment and mobile body |
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