JPS6489370A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS6489370A JPS6489370A JP24521187A JP24521187A JPS6489370A JP S6489370 A JPS6489370 A JP S6489370A JP 24521187 A JP24521187 A JP 24521187A JP 24521187 A JP24521187 A JP 24521187A JP S6489370 A JPS6489370 A JP S6489370A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon oxide
- oxide film
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce a programming voltage by forming a polysilicon film, a silicon oxide film and a tunneling insulating film on an opposite conductivity type diffused layer formed on a one conductivity type semiconductor substrate, and forming a floating electrode. CONSTITUTION:A drain region 3 and a source region 3 containing an N-type impurity are formed in a P-type silicon substrate 1, and a polysilicon film 10 containing an N-type impurity is formed partly on a drain region 2. Further, a silicon oxide film 5 is formed over between the regions 3 and 2 on the substrate 1, and a tunneling insulating film 11 is also formed on the whole surface of the film 10. A floating electrode 7, a silicon oxide film 8 and a control electrode 9 are sequentially laminated on the films 5, 11. Thus, a programming voltage can be reduced while obtaining storage retaining characteristic.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24521187A JPS6489370A (en) | 1987-09-29 | 1987-09-29 | Semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24521187A JPS6489370A (en) | 1987-09-29 | 1987-09-29 | Semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6489370A true JPS6489370A (en) | 1989-04-03 |
Family
ID=17130283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24521187A Pending JPS6489370A (en) | 1987-09-29 | 1987-09-29 | Semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6489370A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575134A (en) * | 1991-08-16 | 1993-03-26 | Rohm Co Ltd | Semiconductor memory |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56134776A (en) * | 1980-03-01 | 1981-10-21 | Itt | Semiconductor storage cell |
JPS62265767A (en) * | 1986-05-14 | 1987-11-18 | Toshiba Corp | Nonvolatile semiconductor device and manufacture thereof |
-
1987
- 1987-09-29 JP JP24521187A patent/JPS6489370A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56134776A (en) * | 1980-03-01 | 1981-10-21 | Itt | Semiconductor storage cell |
JPS62265767A (en) * | 1986-05-14 | 1987-11-18 | Toshiba Corp | Nonvolatile semiconductor device and manufacture thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575134A (en) * | 1991-08-16 | 1993-03-26 | Rohm Co Ltd | Semiconductor memory |
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