JPS6489370A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6489370A
JPS6489370A JP24521187A JP24521187A JPS6489370A JP S6489370 A JPS6489370 A JP S6489370A JP 24521187 A JP24521187 A JP 24521187A JP 24521187 A JP24521187 A JP 24521187A JP S6489370 A JPS6489370 A JP S6489370A
Authority
JP
Japan
Prior art keywords
film
silicon oxide
oxide film
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24521187A
Other languages
Japanese (ja)
Inventor
Kazuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP24521187A priority Critical patent/JPS6489370A/en
Publication of JPS6489370A publication Critical patent/JPS6489370A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce a programming voltage by forming a polysilicon film, a silicon oxide film and a tunneling insulating film on an opposite conductivity type diffused layer formed on a one conductivity type semiconductor substrate, and forming a floating electrode. CONSTITUTION:A drain region 3 and a source region 3 containing an N-type impurity are formed in a P-type silicon substrate 1, and a polysilicon film 10 containing an N-type impurity is formed partly on a drain region 2. Further, a silicon oxide film 5 is formed over between the regions 3 and 2 on the substrate 1, and a tunneling insulating film 11 is also formed on the whole surface of the film 10. A floating electrode 7, a silicon oxide film 8 and a control electrode 9 are sequentially laminated on the films 5, 11. Thus, a programming voltage can be reduced while obtaining storage retaining characteristic.
JP24521187A 1987-09-29 1987-09-29 Semiconductor storage device Pending JPS6489370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24521187A JPS6489370A (en) 1987-09-29 1987-09-29 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24521187A JPS6489370A (en) 1987-09-29 1987-09-29 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6489370A true JPS6489370A (en) 1989-04-03

Family

ID=17130283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24521187A Pending JPS6489370A (en) 1987-09-29 1987-09-29 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6489370A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0575134A (en) * 1991-08-16 1993-03-26 Rohm Co Ltd Semiconductor memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134776A (en) * 1980-03-01 1981-10-21 Itt Semiconductor storage cell
JPS62265767A (en) * 1986-05-14 1987-11-18 Toshiba Corp Nonvolatile semiconductor device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134776A (en) * 1980-03-01 1981-10-21 Itt Semiconductor storage cell
JPS62265767A (en) * 1986-05-14 1987-11-18 Toshiba Corp Nonvolatile semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0575134A (en) * 1991-08-16 1993-03-26 Rohm Co Ltd Semiconductor memory

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