GB1415944A - Charge transfer devices - Google Patents

Charge transfer devices

Info

Publication number
GB1415944A
GB1415944A GB3947473A GB3947473A GB1415944A GB 1415944 A GB1415944 A GB 1415944A GB 3947473 A GB3947473 A GB 3947473A GB 3947473 A GB3947473 A GB 3947473A GB 1415944 A GB1415944 A GB 1415944A
Authority
GB
United Kingdom
Prior art keywords
channel
portions
different
charge transfer
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3947473A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1415944A publication Critical patent/GB1415944A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1415944 Charge transfer devices WESTERN ELECTRIC CO Inc 21 Aug 1973 [23 Aug 1972] 39474/73 Heading H1K A charge transfer device of the bucket brigade type has sequential portions of each transfer region (channel) of different threshold voltages. Three or four voltages per channel may be used but two is preferred. There should be an abrupt change between the portions and the parameters of the device and operation should be chosen such that (in the two voltage case) the depletion region associated with a charge receiving region does not extend back beyond the other side of the adjacent (low threshold) channel portion. The device shown has left to right transfer and has the left hand portion of each channel given a higher threshold voltage by enhancing the substrate conductivity at that point. In Fig. 2 the same effect is achieved, with uniform channel doping, by locally increasing the insulation thickness. Other methods suggested are: the use of electrodes with contiguous segments of different work function; the use of insulation with portions of different dielectric constants; and (c) the use of electrodes formed in overlapping isolated sections biased at different levels.
GB3947473A 1972-08-23 1973-08-21 Charge transfer devices Expired GB1415944A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28296272A 1972-08-23 1972-08-23

Publications (1)

Publication Number Publication Date
GB1415944A true GB1415944A (en) 1975-12-03

Family

ID=23083881

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3947473A Expired GB1415944A (en) 1972-08-23 1973-08-21 Charge transfer devices

Country Status (9)

Country Link
US (1) US3767983A (en)
JP (1) JPS5232957B2 (en)
BE (1) BE803789A (en)
CA (1) CA968885A (en)
FR (1) FR2197207B1 (en)
GB (1) GB1415944A (en)
IT (1) IT998395B (en)
NL (1) NL7311381A (en)
SE (1) SE390355B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
NL181766C (en) * 1973-03-19 1987-10-16 Philips Nv LOAD-COUPLED SEMICONDUCTOR CIRCUIT, WHICH PACKAGES MAY BE TRANSFERRED FROM A SEMICONDUCTOR LAYER TO A SEMI-CONDUCTOR LAYER BY A SEMI-CONDUCTOR LAYER.
US3947863A (en) * 1973-06-29 1976-03-30 Motorola Inc. Charge coupled device with electrically settable shift direction
US4100513A (en) * 1975-09-18 1978-07-11 Reticon Corporation Semiconductor filtering apparatus
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
US4171229A (en) * 1977-06-24 1979-10-16 International Business Machines Corporation Improved process to form bucket brigade device
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
US4358890A (en) * 1978-08-31 1982-11-16 Ibm Corporation Process for making a dual implanted drain extension for bucket brigade device tetrode structure
JPS5534493A (en) * 1978-08-31 1980-03-11 Ibm Bucket brigade cell
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
JPS5857750A (en) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS58154269A (en) * 1982-03-09 1983-09-13 Matsushita Electronics Corp Charge transfer device
US4992842A (en) * 1988-07-07 1991-02-12 Tektronix, Inc. Charge-coupled device channel with countinously graded built-in potential
US5065203A (en) * 1988-07-07 1991-11-12 Tektronix, Inc. Trench structured charge-coupled device
US4910569A (en) * 1988-08-29 1990-03-20 Eastman Kodak Company Charge-coupled device having improved transfer efficiency

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3697786A (en) * 1971-03-29 1972-10-10 Bell Telephone Labor Inc Capacitively driven charge transfer devices

Also Published As

Publication number Publication date
CA968885A (en) 1975-06-03
BE803789A (en) 1973-12-17
NL7311381A (en) 1974-02-26
SE390355B (en) 1976-12-13
JPS5232957B2 (en) 1977-08-25
DE2341855B2 (en) 1976-05-13
FR2197207B1 (en) 1976-05-07
JPS4960686A (en) 1974-06-12
IT998395B (en) 1976-01-20
US3767983A (en) 1973-10-23
FR2197207A1 (en) 1974-03-22
DE2341855A1 (en) 1974-05-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee