BE803789A - CHARGE TRANSFER DEVICE TO DIFFUSED REGIONS - Google Patents

CHARGE TRANSFER DEVICE TO DIFFUSED REGIONS

Info

Publication number
BE803789A
BE803789A BE134737A BE134737A BE803789A BE 803789 A BE803789 A BE 803789A BE 134737 A BE134737 A BE 134737A BE 134737 A BE134737 A BE 134737A BE 803789 A BE803789 A BE 803789A
Authority
BE
Belgium
Prior art keywords
transfer device
charge transfer
diffused regions
diffused
regions
Prior art date
Application number
BE134737A
Other languages
French (fr)
Inventor
C N Berglund
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE803789A publication Critical patent/BE803789A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
BE134737A 1972-08-23 1973-08-20 CHARGE TRANSFER DEVICE TO DIFFUSED REGIONS BE803789A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28296272A 1972-08-23 1972-08-23

Publications (1)

Publication Number Publication Date
BE803789A true BE803789A (en) 1973-12-17

Family

ID=23083881

Family Applications (1)

Application Number Title Priority Date Filing Date
BE134737A BE803789A (en) 1972-08-23 1973-08-20 CHARGE TRANSFER DEVICE TO DIFFUSED REGIONS

Country Status (9)

Country Link
US (1) US3767983A (en)
JP (1) JPS5232957B2 (en)
BE (1) BE803789A (en)
CA (1) CA968885A (en)
FR (1) FR2197207B1 (en)
GB (1) GB1415944A (en)
IT (1) IT998395B (en)
NL (1) NL7311381A (en)
SE (1) SE390355B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
NL181766C (en) * 1973-03-19 1987-10-16 Philips Nv LOAD-COUPLED SEMICONDUCTOR CIRCUIT, WHICH PACKAGES MAY BE TRANSFERRED FROM A SEMICONDUCTOR LAYER TO A SEMI-CONDUCTOR LAYER BY A SEMI-CONDUCTOR LAYER.
US3947863A (en) * 1973-06-29 1976-03-30 Motorola Inc. Charge coupled device with electrically settable shift direction
US4100513A (en) * 1975-09-18 1978-07-11 Reticon Corporation Semiconductor filtering apparatus
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
US4171229A (en) * 1977-06-24 1979-10-16 International Business Machines Corporation Improved process to form bucket brigade device
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
US4358890A (en) * 1978-08-31 1982-11-16 Ibm Corporation Process for making a dual implanted drain extension for bucket brigade device tetrode structure
JPS5534493A (en) * 1978-08-31 1980-03-11 Ibm Bucket brigade cell
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
JPS5857750A (en) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS58154269A (en) * 1982-03-09 1983-09-13 Matsushita Electronics Corp Charge transfer device
US4992842A (en) * 1988-07-07 1991-02-12 Tektronix, Inc. Charge-coupled device channel with countinously graded built-in potential
US5065203A (en) * 1988-07-07 1991-11-12 Tektronix, Inc. Trench structured charge-coupled device
US4910569A (en) * 1988-08-29 1990-03-20 Eastman Kodak Company Charge-coupled device having improved transfer efficiency

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3697786A (en) * 1971-03-29 1972-10-10 Bell Telephone Labor Inc Capacitively driven charge transfer devices

Also Published As

Publication number Publication date
CA968885A (en) 1975-06-03
NL7311381A (en) 1974-02-26
SE390355B (en) 1976-12-13
JPS5232957B2 (en) 1977-08-25
DE2341855B2 (en) 1976-05-13
GB1415944A (en) 1975-12-03
FR2197207B1 (en) 1976-05-07
JPS4960686A (en) 1974-06-12
IT998395B (en) 1976-01-20
US3767983A (en) 1973-10-23
FR2197207A1 (en) 1974-03-22
DE2341855A1 (en) 1974-05-22

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