FR2197207A1 - - Google Patents

Info

Publication number
FR2197207A1
FR2197207A1 FR7330150A FR7330150A FR2197207A1 FR 2197207 A1 FR2197207 A1 FR 2197207A1 FR 7330150 A FR7330150 A FR 7330150A FR 7330150 A FR7330150 A FR 7330150A FR 2197207 A1 FR2197207 A1 FR 2197207A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7330150A
Other languages
French (fr)
Other versions
FR2197207B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2197207A1 publication Critical patent/FR2197207A1/fr
Application granted granted Critical
Publication of FR2197207B1 publication Critical patent/FR2197207B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7330150A 1972-08-23 1973-08-20 Expired FR2197207B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28296272A 1972-08-23 1972-08-23

Publications (2)

Publication Number Publication Date
FR2197207A1 true FR2197207A1 (en) 1974-03-22
FR2197207B1 FR2197207B1 (en) 1976-05-07

Family

ID=23083881

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7330150A Expired FR2197207B1 (en) 1972-08-23 1973-08-20

Country Status (9)

Country Link
US (1) US3767983A (en)
JP (1) JPS5232957B2 (en)
BE (1) BE803789A (en)
CA (1) CA968885A (en)
FR (1) FR2197207B1 (en)
GB (1) GB1415944A (en)
IT (1) IT998395B (en)
NL (1) NL7311381A (en)
SE (1) SE390355B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000180A1 (en) * 1977-06-24 1979-01-10 International Business Machines Corporation Semiconductor cell structure for a bucket brigade device and process for making same
EP0008691A1 (en) * 1978-08-31 1980-03-19 International Business Machines Corporation Storage cell for a charge transfer bucket-brigade circuit

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
NL181766C (en) * 1973-03-19 1987-10-16 Philips Nv LOAD-COUPLED SEMICONDUCTOR CIRCUIT, WHICH PACKAGES MAY BE TRANSFERRED FROM A SEMICONDUCTOR LAYER TO A SEMI-CONDUCTOR LAYER BY A SEMI-CONDUCTOR LAYER.
US3947863A (en) * 1973-06-29 1976-03-30 Motorola Inc. Charge coupled device with electrically settable shift direction
US4100513A (en) * 1975-09-18 1978-07-11 Reticon Corporation Semiconductor filtering apparatus
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US4171229A (en) * 1977-06-24 1979-10-16 International Business Machines Corporation Improved process to form bucket brigade device
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
US4358890A (en) * 1978-08-31 1982-11-16 Ibm Corporation Process for making a dual implanted drain extension for bucket brigade device tetrode structure
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
JPS5857750A (en) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS58154269A (en) * 1982-03-09 1983-09-13 Matsushita Electronics Corp Charge transfer device
US5065203A (en) * 1988-07-07 1991-11-12 Tektronix, Inc. Trench structured charge-coupled device
US4992842A (en) * 1988-07-07 1991-02-12 Tektronix, Inc. Charge-coupled device channel with countinously graded built-in potential
US4910569A (en) * 1988-08-29 1990-03-20 Eastman Kodak Company Charge-coupled device having improved transfer efficiency

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3697786A (en) * 1971-03-29 1972-10-10 Bell Telephone Labor Inc Capacitively driven charge transfer devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000180A1 (en) * 1977-06-24 1979-01-10 International Business Machines Corporation Semiconductor cell structure for a bucket brigade device and process for making same
EP0008691A1 (en) * 1978-08-31 1980-03-19 International Business Machines Corporation Storage cell for a charge transfer bucket-brigade circuit

Also Published As

Publication number Publication date
SE390355B (en) 1976-12-13
FR2197207B1 (en) 1976-05-07
DE2341855B2 (en) 1976-05-13
JPS4960686A (en) 1974-06-12
US3767983A (en) 1973-10-23
BE803789A (en) 1973-12-17
JPS5232957B2 (en) 1977-08-25
NL7311381A (en) 1974-02-26
IT998395B (en) 1976-01-20
GB1415944A (en) 1975-12-03
DE2341855A1 (en) 1974-05-22
CA968885A (en) 1975-06-03

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Legal Events

Date Code Title Description
ST Notification of lapse