GB1423449A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1423449A
GB1423449A GB3583173A GB3583173A GB1423449A GB 1423449 A GB1423449 A GB 1423449A GB 3583173 A GB3583173 A GB 3583173A GB 3583173 A GB3583173 A GB 3583173A GB 1423449 A GB1423449 A GB 1423449A
Authority
GB
United Kingdom
Prior art keywords
regions
gate electrode
semiconductor device
gate
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3583173A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3583173A priority Critical patent/GB1423449A/en
Priority to DE19742433803 priority patent/DE2433803C3/en
Priority to IT2519274A priority patent/IT1017172B/en
Priority to FR7425991A priority patent/FR2246074B1/fr
Publication of GB1423449A publication Critical patent/GB1423449A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

1423449 Semiconductor devices STANDARD TELEPHONES & CABLES Ltd 27 July 1973 35831/73 Heading H1K An IGFET having an additional region 3 (Fig. 2) between the source and drain regions 4, 2, all three regions 2-4 being of p-type conductivity (in an n-type substrate 1), has a first externally contacted gate electrode 10 between the regions 4 and 3 and a second floating gate electrode 13 between the regions 3 and 2. Both the gate electrodes 10, 13 are embedded in the gate insulation 5.
GB3583173A 1973-07-27 1973-07-27 Semiconductor device Expired GB1423449A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB3583173A GB1423449A (en) 1973-07-27 1973-07-27 Semiconductor device
DE19742433803 DE2433803C3 (en) 1973-07-27 1974-07-13 Field effect transistor with two insulated gate electrodes
IT2519274A IT1017172B (en) 1973-07-27 1974-07-16 SEMICONDUCTOR DEVICE
FR7425991A FR2246074B1 (en) 1973-07-27 1974-07-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3583173A GB1423449A (en) 1973-07-27 1973-07-27 Semiconductor device

Publications (1)

Publication Number Publication Date
GB1423449A true GB1423449A (en) 1976-02-04

Family

ID=10381984

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3583173A Expired GB1423449A (en) 1973-07-27 1973-07-27 Semiconductor device

Country Status (4)

Country Link
DE (1) DE2433803C3 (en)
FR (1) FR2246074B1 (en)
GB (1) GB1423449A (en)
IT (1) IT1017172B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8194470B2 (en) 2005-12-21 2012-06-05 Sandisk Technologies Inc. Methods of forming flash device with shared word lines

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3046749C2 (en) * 1979-12-10 1986-01-16 Sharp K.K., Osaka MOS transistor for high operating voltages
SE456291B (en) * 1980-02-22 1988-09-19 Rca Corp VERTICAL MOSPHET DEVICE INCLUDING A COLLECTOR AREA LOCATED ON SCREEN ELECTRODE FOR MINIMIZER MILLER CAPACITANCE AND POWER DISTURBANCE
US7495294B2 (en) 2005-12-21 2009-02-24 Sandisk Corporation Flash devices with shared word lines
EP1964170A2 (en) * 2005-12-21 2008-09-03 Sandisk Corporation Flash devices with shared word lines and manufacturing methods therefor
DE102013103258A1 (en) 2013-04-02 2014-04-30 Miele & Cie. Kg Connecting kit for laundry treatment devices that are set on each other, has mounting elements for mounting of connecting kit on lid of bottom device, which is brought into connection with framework

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8194470B2 (en) 2005-12-21 2012-06-05 Sandisk Technologies Inc. Methods of forming flash device with shared word lines

Also Published As

Publication number Publication date
FR2246074B1 (en) 1978-09-15
DE2433803A1 (en) 1975-02-13
DE2433803C3 (en) 1980-10-30
DE2433803B2 (en) 1980-02-28
IT1017172B (en) 1977-07-20
FR2246074A1 (en) 1975-04-25

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee