GB1248051A - Method of making insulated gate field effect transistors - Google Patents
Method of making insulated gate field effect transistorsInfo
- Publication number
- GB1248051A GB1248051A GB1010068A GB1010068A GB1248051A GB 1248051 A GB1248051 A GB 1248051A GB 1010068 A GB1010068 A GB 1010068A GB 1010068 A GB1010068 A GB 1010068A GB 1248051 A GB1248051 A GB 1248051A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- grooves
- type
- substrate
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 13
- 239000000758 substrate Substances 0.000 abstract 6
- 238000000151 deposition Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 230000009993 protective function Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1,248,051. IGFETs. POST OFFICE. 3 March, 1969 [1 March, 1968], No. 10100/68. Heading H1K. An IGFET is formed by depositing a layer of P(N) type on a layer of N(P) type material and diffusing impurity into it to form a second N(P) layer, forming a trough extending through the other layers into the first N(P) layer, providing insulating material on the groove walls and then depositing a metal electrode on the insulation where it overlies the P(N) layer. A typical device, Fig. 3, is formed by epitaxially depositing a 1 ohm. cm. N-type silicon layer 8 6 Á thick on a 0.005 ohm cm. silicon substrate 7 and then forming a P-type layer 11 by planar diffusion techniques. Grooves 15 extending to the substrate are formed by photoresist and etching steps and then the exposed surfaces of the grooves coated with oxide 1500 Š thick. The interdigitated drain 20 and gate 21 electrodes and electrodes 19, all of which extend over an overall oxide layer to enlarged contact pads are then shaped by etching from an evaporated layer of aluminium. The substrate is attached to a header constituting the source electrode. Source-drain capacitance may be reduced by leaving the bases of the grooves free of electrode metal. Another way of reducing the capacitance is to use a lightly doped N-type substrate with a heavily doped P-type surface layer functioning as source, the groove extending through this layer. In another modification the oxide insulant is absent from the bases of the grooves which are covered with a silicon nitride layer which also extends over the oxide on the groove walls. This layer can break down reversibly to short the gate to the source at voltages less than the breakdown voltage of the gate insulation proper and thus fulfils a protective function. In yet another arrangement which enables several devices with mutually isolated sources to be formed in a single body the substrate is again of N-type with diffused P-type inclusions constituting the sources which can be contacted at the bases of etched grooves. Finally the vertical walls of the grooves may be replaced by inclined walls, resulting in some cases in V-shaped grooves, by orientating the substrate surface in a 100 plane and using hydrazine hydrate to etch the grooves.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1010068A GB1248051A (en) | 1968-03-01 | 1968-03-01 | Method of making insulated gate field effect transistors |
NL6902936A NL6902936A (en) | 1968-03-01 | 1969-02-25 | |
DE19691910297 DE1910297A1 (en) | 1968-03-01 | 1969-02-28 | Insulated gate field effect transistor and process for its manufacture |
FR6905631A FR2003068A7 (en) | 1968-03-01 | 1969-03-03 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1010068A GB1248051A (en) | 1968-03-01 | 1968-03-01 | Method of making insulated gate field effect transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1248051A true GB1248051A (en) | 1971-09-29 |
Family
ID=9961500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1010068A Expired GB1248051A (en) | 1968-03-01 | 1968-03-01 | Method of making insulated gate field effect transistors |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1910297A1 (en) |
FR (1) | FR2003068A7 (en) |
GB (1) | GB1248051A (en) |
NL (1) | NL6902936A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3324017A1 (en) * | 1982-07-05 | 1984-01-05 | Matsushita Electronics Corp., Kadoma, Osaka | Insulating-layer field-effect transistor |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2106540A1 (en) * | 1970-02-13 | 1971-08-19 | Texas Instruments Inc | Semiconductor circuits and processes for their manufacture |
DE2619713C2 (en) * | 1976-05-04 | 1984-12-20 | Siemens AG, 1000 Berlin und 8000 München | Semiconductor memory |
US5124764A (en) * | 1986-10-21 | 1992-06-23 | Texas Instruments Incorporated | Symmetric vertical MOS transistor with improved high voltage operation |
US5160491A (en) * | 1986-10-21 | 1992-11-03 | Texas Instruments Incorporated | Method of making a vertical MOS transistor |
US5016067A (en) * | 1988-04-11 | 1991-05-14 | Texas Instruments Incorporated | Vertical MOS transistor |
US5016068A (en) * | 1988-04-15 | 1991-05-14 | Texas Instruments Incorporated | Vertical floating-gate transistor |
-
1968
- 1968-03-01 GB GB1010068A patent/GB1248051A/en not_active Expired
-
1969
- 1969-02-25 NL NL6902936A patent/NL6902936A/xx unknown
- 1969-02-28 DE DE19691910297 patent/DE1910297A1/en active Pending
- 1969-03-03 FR FR6905631A patent/FR2003068A7/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3324017A1 (en) * | 1982-07-05 | 1984-01-05 | Matsushita Electronics Corp., Kadoma, Osaka | Insulating-layer field-effect transistor |
Also Published As
Publication number | Publication date |
---|---|
DE1910297A1 (en) | 1969-11-13 |
FR2003068A7 (en) | 1969-11-07 |
NL6902936A (en) | 1969-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4729001A (en) | Short-channel field effect transistor | |
GB1447849A (en) | Stabilized semiconductor devices and method of making same | |
GB1153428A (en) | Improvements in Semiconductor Devices. | |
GB1465244A (en) | Deep depletion insulated gate field effect transistors | |
GB1442464A (en) | Charge-coupled devices | |
US4333224A (en) | Method of fabricating polysilicon/silicon junction field effect transistors | |
GB1242896A (en) | Semiconductor device and method of fabrication | |
GB1396896A (en) | Semiconductor devices including field effect and bipolar transistors | |
US5012305A (en) | High speed junction field effect transistor for use in bipolar integrated circuits | |
KR910001886A (en) | Semiconductor device and manufacturing method | |
GB1129200A (en) | High frequency field effect transistor | |
US4316203A (en) | Insulated gate field effect transistor | |
EP0071335B1 (en) | Field effect transistor | |
GB1210090A (en) | Insulated gate field effect transistor | |
GB1248051A (en) | Method of making insulated gate field effect transistors | |
US3430112A (en) | Insulated gate field effect transistor with channel portions of different conductivity | |
GB1476790A (en) | Semiconductor device including an insulated gate field effect transistor and method for its manufacture | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
GB1073135A (en) | Semiconductor current limiter | |
US3889287A (en) | Mnos memory matrix | |
GB1422287A (en) | Insulated gate transistor | |
JPS5632757A (en) | Insulated gate type transistor and integrated circuit | |
GB1423449A (en) | Semiconductor device | |
GB1045429A (en) | Transistors | |
US3946415A (en) | Normally off schottky barrier field effect transistor and method of fabrication |