GB1351985A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1351985A GB1351985A GB3289071A GB3289071A GB1351985A GB 1351985 A GB1351985 A GB 1351985A GB 3289071 A GB3289071 A GB 3289071A GB 3289071 A GB3289071 A GB 3289071A GB 1351985 A GB1351985 A GB 1351985A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- film
- ribbons
- ribbon
- supply ribbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
1351985 Semi-conductor device HITACHI Ltd 13 July 1971 [28 Aug 1970] 32890/71 Heading H1K A semi-conductor device comprises a substrate 1 having an insulating film 3 thereon, a conductive supply ribbon 4 on the film 3, and at least one further conductive ribbon, 5, 6 on the film 3, electrically separate from, but adjacent and parallel to, the supply ribbon 4. The further ribbons are earthed to the same potential as the substrate to remove leakage charges from the supply ribbon and so prevent the formation of parasitic inversion channels in the substrate. The ribbons 5, 6 may be arranged one on each side of the supply ribbon 4. The device may be a nine IGFET shift register, the ribbons being of aluminium, the substrate of silicon with boron doped regions 2, and the film 3 may be of thermally grown oxide.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP45074896A JPS4940394B1 (en) | 1970-08-28 | 1970-08-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1351985A true GB1351985A (en) | 1974-05-15 |
Family
ID=13560595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3289071A Expired GB1351985A (en) | 1970-08-28 | 1971-07-13 | Semiconductor devices |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4940394B1 (en) |
DE (1) | DE2115668A1 (en) |
FR (1) | FR2103572B1 (en) |
GB (1) | GB1351985A (en) |
NL (1) | NL7104158A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2238910A (en) * | 1989-12-06 | 1991-06-12 | Ericsson Telefon Ab L M | Preventing parasitic transistor in integrated circuits |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3961358A (en) * | 1973-02-21 | 1976-06-01 | Rca Corporation | Leakage current prevention in semiconductor integrated circuit devices |
JPS52144693U (en) * | 1976-04-26 | 1977-11-02 | ||
JPS5850765A (en) * | 1981-09-21 | 1983-03-25 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1970
- 1970-08-28 JP JP45074896A patent/JPS4940394B1/ja active Pending
-
1971
- 1971-02-12 FR FR7104768A patent/FR2103572B1/fr not_active Expired
- 1971-03-29 NL NL7104158A patent/NL7104158A/xx unknown
- 1971-03-31 DE DE19712115668 patent/DE2115668A1/en active Pending
- 1971-07-13 GB GB3289071A patent/GB1351985A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2238910A (en) * | 1989-12-06 | 1991-06-12 | Ericsson Telefon Ab L M | Preventing parasitic transistor in integrated circuits |
GB2238910B (en) * | 1989-12-06 | 1993-08-11 | Ericsson Telefon Ab L M | High voltage integrated circuit |
US5861656A (en) * | 1989-12-06 | 1999-01-19 | Telefonaktiebolaget Lm Ericsson | High voltage integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS4940394B1 (en) | 1974-11-01 |
NL7104158A (en) | 1972-03-01 |
DE2115668A1 (en) | 1972-03-02 |
FR2103572B1 (en) | 1977-01-21 |
FR2103572A1 (en) | 1972-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1377124A (en) | Charge coupled circuits | |
GB1272788A (en) | Improvements in and relating to a semi-conductor wafer for integrated circuits and a method of forming the wafer | |
GB1155578A (en) | Field Effect Transistor | |
GB1301345A (en) | ||
GB1489390A (en) | Method for fabricating mos devices with a plurality of thresholds on a single semi-conductor substrate | |
GB1414183A (en) | Charge coupled devices | |
GB1084937A (en) | Transistors | |
GB1322933A (en) | Semiconductor device | |
GB1351985A (en) | Semiconductor devices | |
GB1379141A (en) | Charge coupled devices | |
GB1320778A (en) | Semiconductor devices | |
EP0178148A3 (en) | Thin film photodetector | |
GB1519995A (en) | Semiconductor devices | |
GB1415436A (en) | Charge coupled devices | |
GB1125650A (en) | Insulating layers and devices incorporating such layers | |
GB1050417A (en) | ||
ES410300A1 (en) | Iamge pick up devices | |
GB1408892A (en) | Semiconductor devices for information storage and transfer | |
GB1380466A (en) | Gate protective device for insulated gate fieldeffect transistors | |
GB1360578A (en) | Semiconductor integrated circuits | |
GB1425864A (en) | Monolithic semiconductor arrangements | |
GB1482163A (en) | Space charge limited transistor | |
GB1048424A (en) | Improvements in or relating to semiconductor devices | |
GB1340350A (en) | Surface controlled avalanche semiconductor device | |
GB1220436A (en) | Stress sensitive semiconductor element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |