GB1380466A - Gate protective device for insulated gate fieldeffect transistors - Google Patents

Gate protective device for insulated gate fieldeffect transistors

Info

Publication number
GB1380466A
GB1380466A GB1497872A GB1497872A GB1380466A GB 1380466 A GB1380466 A GB 1380466A GB 1497872 A GB1497872 A GB 1497872A GB 1497872 A GB1497872 A GB 1497872A GB 1380466 A GB1380466 A GB 1380466A
Authority
GB
United Kingdom
Prior art keywords
diodes
gate
film
semi
insulating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1497872A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1380466A publication Critical patent/GB1380466A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

1380466 Semi-conductor devices RCA CORPORATION 30 March 1972 [12 July 1971] 14978/72 Heading H1K A gate insulation protection device for an insulated gate field effect transistor 42 comprises a plurality of degenerately doped back to back diodes, 70, formed in a semi-conductor film 50 disposed on insulating material 44. The diodes may be formed from nine degenerately doped regions 72, 74 of alternating conductivity type, forming eight Zener diodes connected in series between the gate electrode 63 and either the source or drain region 64, 66 respectively. The insulating material may be sapphire or spinel, the film 50 being of epitaxially deposited silicon 10,000Š thick. The degenerate doping level may be in excess of 5 + 10<SP>19</SP> atoms/cc. An insulating film 78 over the diodes may be thermally grown silicon dioxide, and aluminium conductive tracks used for interconnections. Doping may be by means of boron. In an alternative embodiment, the diodes are similarly formed on an insulating film on a semiconductor substrate in which the I.G.F.E.T. is formed. One connection to the diodes may be by means of a conductive track leading to a diffused region in the substrate.
GB1497872A 1971-07-12 1972-03-30 Gate protective device for insulated gate fieldeffect transistors Expired GB1380466A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16147871A 1971-07-12 1971-07-12

Publications (1)

Publication Number Publication Date
GB1380466A true GB1380466A (en) 1975-01-15

Family

ID=22581334

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1497872A Expired GB1380466A (en) 1971-07-12 1972-03-30 Gate protective device for insulated gate fieldeffect transistors

Country Status (10)

Country Link
JP (1) JPS5138587B1 (en)
AU (1) AU471347B2 (en)
BE (1) BE781698A (en)
CA (1) CA941515A (en)
DE (1) DE2215850A1 (en)
FR (1) FR2145460B1 (en)
GB (1) GB1380466A (en)
IT (1) IT951315B (en)
NL (1) NL7204607A (en)
SE (1) SE379117B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060635A2 (en) * 1981-02-27 1982-09-22 Hitachi, Ltd. A semiconductor integrated circuit device including a protection element
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
US5365099A (en) * 1988-12-02 1994-11-15 Motorola, Inc. Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
DE102013215427B4 (en) 2012-08-06 2023-03-30 Denso Corporation diode

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2404922A1 (en) * 1977-09-30 1979-04-27 Radiotechnique Compelec PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction
JPS5825264A (en) * 1981-08-07 1983-02-15 Hitachi Ltd Insulated gate type semiconductor device and manufacture thereof
US5025298A (en) * 1989-08-22 1991-06-18 Motorola, Inc. Semiconductor structure with closely coupled substrate temperature sense element
DE69417944T2 (en) * 1993-04-30 1999-12-09 International Business Machines Corp., Armonk Process for producing a protective diode against electrostatic discharge in silicon-on-insulator technology

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060635A2 (en) * 1981-02-27 1982-09-22 Hitachi, Ltd. A semiconductor integrated circuit device including a protection element
EP0060635A3 (en) * 1981-02-27 1983-08-03 Hitachi, Ltd. A semiconductor integrated circuit device including a protection element
US5365099A (en) * 1988-12-02 1994-11-15 Motorola, Inc. Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
US5631187A (en) * 1988-12-02 1997-05-20 Motorola, Inc. Method for making semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
DE102013215427B4 (en) 2012-08-06 2023-03-30 Denso Corporation diode

Also Published As

Publication number Publication date
FR2145460B1 (en) 1977-01-14
AU4099372A (en) 1973-10-18
JPS5138587B1 (en) 1976-10-22
SE379117B (en) 1975-09-22
AU471347B2 (en) 1973-10-18
FR2145460A1 (en) 1973-02-23
BE781698A (en) 1972-07-31
DE2215850A1 (en) 1973-02-08
NL7204607A (en) 1973-01-16
IT951315B (en) 1973-06-30
CA941515A (en) 1974-02-05

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee