CA941515A - Gate protective device for insulated gate field-effect transistors - Google Patents

Gate protective device for insulated gate field-effect transistors

Info

Publication number
CA941515A
CA941515A CA137,313A CA137313A CA941515A CA 941515 A CA941515 A CA 941515A CA 137313 A CA137313 A CA 137313A CA 941515 A CA941515 A CA 941515A
Authority
CA
Canada
Prior art keywords
protective device
effect transistors
gate
insulated gate
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA137,313A
Other versions
CA137313S (en
Inventor
John E. Meyer (Jr.)
Joseph H. Scott (Jr.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA941515A publication Critical patent/CA941515A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CA137,313A 1971-07-12 1972-03-16 Gate protective device for insulated gate field-effect transistors Expired CA941515A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16147871A 1971-07-12 1971-07-12

Publications (1)

Publication Number Publication Date
CA941515A true CA941515A (en) 1974-02-05

Family

ID=22581334

Family Applications (1)

Application Number Title Priority Date Filing Date
CA137,313A Expired CA941515A (en) 1971-07-12 1972-03-16 Gate protective device for insulated gate field-effect transistors

Country Status (10)

Country Link
JP (1) JPS5138587B1 (en)
AU (1) AU471347B2 (en)
BE (1) BE781698A (en)
CA (1) CA941515A (en)
DE (1) DE2215850A1 (en)
FR (1) FR2145460B1 (en)
GB (1) GB1380466A (en)
IT (1) IT951315B (en)
NL (1) NL7204607A (en)
SE (1) SE379117B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2404922A1 (en) * 1977-09-30 1979-04-27 Radiotechnique Compelec PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS5825264A (en) * 1981-08-07 1983-02-15 Hitachi Ltd Insulated gate type semiconductor device and manufacture thereof
JPH02185069A (en) * 1988-12-02 1990-07-19 Motorola Inc Semiconductor device having high-energy stopping power and temperature-compensated stopping voltage
US5025298A (en) * 1989-08-22 1991-06-18 Motorola, Inc. Semiconductor structure with closely coupled substrate temperature sense element
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
EP0622850B1 (en) * 1993-04-30 1999-04-21 International Business Machines Corporation Process for making an electrostatic discharge protect diode for silicon-on-insulator technology
JP5924313B2 (en) 2012-08-06 2016-05-25 株式会社デンソー diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors

Also Published As

Publication number Publication date
AU4099372A (en) 1973-10-18
FR2145460A1 (en) 1973-02-23
DE2215850A1 (en) 1973-02-08
JPS5138587B1 (en) 1976-10-22
FR2145460B1 (en) 1977-01-14
GB1380466A (en) 1975-01-15
BE781698A (en) 1972-07-31
AU471347B2 (en) 1973-10-18
NL7204607A (en) 1973-01-16
IT951315B (en) 1973-06-30
SE379117B (en) 1975-09-22

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