AU471347B2 - Gate protective device for insulated gate field-effect transistors - Google Patents

Gate protective device for insulated gate field-effect transistors

Info

Publication number
AU471347B2
AU471347B2 AU40993/72A AU4099372A AU471347B2 AU 471347 B2 AU471347 B2 AU 471347B2 AU 40993/72 A AU40993/72 A AU 40993/72A AU 4099372 A AU4099372 A AU 4099372A AU 471347 B2 AU471347 B2 AU 471347B2
Authority
AU
Australia
Prior art keywords
protective device
effect transistors
gate
insulated gate
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU40993/72A
Other versions
AU4099372A (en
Inventor
JR. and JOSEPH HERLONG SCOTT JOHN EVERT MEYER, JR
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of AU4099372A publication Critical patent/AU4099372A/en
Publication of AU471347B2 publication Critical patent/AU471347B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
AU40993/72A 1971-07-12 1972-04-10 Gate protective device for insulated gate field-effect transistors Expired AU471347B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16147871A 1971-07-12 1971-07-12
USUS161,478 1971-07-12

Publications (2)

Publication Number Publication Date
AU4099372A AU4099372A (en) 1973-10-18
AU471347B2 true AU471347B2 (en) 1973-10-18

Family

ID=22581334

Family Applications (1)

Application Number Title Priority Date Filing Date
AU40993/72A Expired AU471347B2 (en) 1971-07-12 1972-04-10 Gate protective device for insulated gate field-effect transistors

Country Status (10)

Country Link
JP (1) JPS5138587B1 (en)
AU (1) AU471347B2 (en)
BE (1) BE781698A (en)
CA (1) CA941515A (en)
DE (1) DE2215850A1 (en)
FR (1) FR2145460B1 (en)
GB (1) GB1380466A (en)
IT (1) IT951315B (en)
NL (1) NL7204607A (en)
SE (1) SE379117B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2404922A1 (en) * 1977-09-30 1979-04-27 Radiotechnique Compelec PROM cells with diodes and fuses - has PN junction diode and electrically destructible element to re-form broken junction or open new junction
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS5825264A (en) * 1981-08-07 1983-02-15 Hitachi Ltd Insulated gate type semiconductor device and manufacture thereof
JPH02185069A (en) * 1988-12-02 1990-07-19 Motorola Inc Semiconductor device having high-energy stopping power and temperature-compensated stopping voltage
US5025298A (en) * 1989-08-22 1991-06-18 Motorola, Inc. Semiconductor structure with closely coupled substrate temperature sense element
US5005061A (en) * 1990-02-05 1991-04-02 Motorola, Inc. Avalanche stress protected semiconductor device having variable input impedance
EP0622850B1 (en) * 1993-04-30 1999-04-21 International Business Machines Corporation Process for making an electrostatic discharge protect diode for silicon-on-insulator technology
JP5924313B2 (en) 2012-08-06 2016-05-25 株式会社デンソー diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors

Also Published As

Publication number Publication date
AU4099372A (en) 1973-10-18
FR2145460B1 (en) 1977-01-14
SE379117B (en) 1975-09-22
IT951315B (en) 1973-06-30
BE781698A (en) 1972-07-31
JPS5138587B1 (en) 1976-10-22
NL7204607A (en) 1973-01-16
GB1380466A (en) 1975-01-15
FR2145460A1 (en) 1973-02-23
DE2215850A1 (en) 1973-02-08
CA941515A (en) 1974-02-05

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