JPS6415969A - Solid-state image sensing device and manufacture thereof - Google Patents
Solid-state image sensing device and manufacture thereofInfo
- Publication number
- JPS6415969A JPS6415969A JP62171930A JP17193087A JPS6415969A JP S6415969 A JPS6415969 A JP S6415969A JP 62171930 A JP62171930 A JP 62171930A JP 17193087 A JP17193087 A JP 17193087A JP S6415969 A JPS6415969 A JP S6415969A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- whole surface
- transfer
- transfer electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To reduce the occurrence of a smear phenomena, and restrain the occurrence of dark time output irregularity, by covering not only the upper parts but also the side parts of a first and a second transfer electrodes with a light shielding film, in order to prevent the incidence of oblique light, and forming an insulating film containing hydrogen in a manner in which the film covers the whole surface without generating step-cut. CONSTITUTION:A thermal oxide film 8 is formed on the whole surface of a semiconductor substrate 1. On a part of the thermal oxide film 8 corresponding with a charge transfer part, a first transfer electrode 9 is formed, on which a second transfer electrode 11 is formed via an insulating film 10. Further, an insulating film 12 is formed by CVD method. The insulating films 10, 12 on the sides of the first and the second transfer electrodes 9, 11 are etched and eliminated as far as a part quite close to an N<+> impurity region 4 as a photoelectric conversion region. Next, an insulating film containing a large amount of hydrogen, e.g a plasma nitride film 13, is deposited on the whole surface. On the plasma nitride film 13 on the upper parts and the side parts of the first and the second transfer electrodes 9, 11, a light shielding film 14 composed of, e.g. and Al layer, is formed as far as a part quite close to an N<+> impurity region 4 as a photoelectric conversion region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171930A JPS6415969A (en) | 1987-07-09 | 1987-07-09 | Solid-state image sensing device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171930A JPS6415969A (en) | 1987-07-09 | 1987-07-09 | Solid-state image sensing device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415969A true JPS6415969A (en) | 1989-01-19 |
Family
ID=15932470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62171930A Pending JPS6415969A (en) | 1987-07-09 | 1987-07-09 | Solid-state image sensing device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415969A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0456273A (en) * | 1990-06-25 | 1992-02-24 | Matsushita Electron Corp | Solid-state image pickup device |
US5351081A (en) * | 1990-11-16 | 1994-09-27 | Sony Corporation | Solid-state imaging device having a light barrier layer |
US5763292A (en) * | 1993-05-17 | 1998-06-09 | Sony Corporation | Method of making a solid state imager with reduced smear |
KR100231905B1 (en) * | 1996-10-14 | 1999-12-01 | 윤종용 | A directive non-contact type solid state image sensor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209270A (en) * | 1982-05-31 | 1983-12-06 | Nec Corp | Solid-state image pickup element |
-
1987
- 1987-07-09 JP JP62171930A patent/JPS6415969A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209270A (en) * | 1982-05-31 | 1983-12-06 | Nec Corp | Solid-state image pickup element |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0456273A (en) * | 1990-06-25 | 1992-02-24 | Matsushita Electron Corp | Solid-state image pickup device |
US5351081A (en) * | 1990-11-16 | 1994-09-27 | Sony Corporation | Solid-state imaging device having a light barrier layer |
KR100223503B1 (en) * | 1990-11-16 | 1999-10-15 | 이데이 노부유끼 | Solid-state image sensing device |
US5763292A (en) * | 1993-05-17 | 1998-06-09 | Sony Corporation | Method of making a solid state imager with reduced smear |
KR100231905B1 (en) * | 1996-10-14 | 1999-12-01 | 윤종용 | A directive non-contact type solid state image sensor |
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