JPS61150365A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS61150365A
JPS61150365A JP59271817A JP27181784A JPS61150365A JP S61150365 A JPS61150365 A JP S61150365A JP 59271817 A JP59271817 A JP 59271817A JP 27181784 A JP27181784 A JP 27181784A JP S61150365 A JPS61150365 A JP S61150365A
Authority
JP
Japan
Prior art keywords
circuit
vcc
supply voltage
converting circuits
voltage converting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59271817A
Other versions
JP2659699B2 (en
Inventor
Shigeyoshi Watanabe
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59271817A priority Critical patent/JP2659699B2/en
Publication of JPS61150365A publication Critical patent/JPS61150365A/en
Application granted granted Critical
Publication of JP2659699B2 publication Critical patent/JP2659699B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To obtain a DRAM having the high degree of integration by incorporating a plurality of supply voltage converting circuits, stepping down supply voltage fed from the outside and each supplying separate circuit region with the voltage.
CONSTITUTION: Voltage converting circuits 111, 112 are mounted into a chip 10, and VCC is each stepped down to VCC1, VCC2 and fed to a core circuit 12 and a peripheral circuit 13. VCC1 for the core circuit 12 may change slightly when large currents flow through the circuit 12, and may return to an original state on activity, thus eliminating the need for large current driving capacity, then reducing power consumption by a simple circuit. On the other hand, the peripheral circuit 13 is given approximately constant VCC2 by another circuit 112 regardless of large currents in the core circuit 12. Accordingly to the constitution, a power supply margin is elevated, and the power consumption and areas of supply voltage converting circuits are reduced, thus fining the whole chip, then acquiring a DRAM having high reliability.
COPYRIGHT: (C)1986,JPO&Japio
JP59271817A 1984-12-25 1984-12-25 The semiconductor integrated circuit device Expired - Lifetime JP2659699B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59271817A JP2659699B2 (en) 1984-12-25 1984-12-25 The semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59271817A JP2659699B2 (en) 1984-12-25 1984-12-25 The semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS61150365A true JPS61150365A (en) 1986-07-09
JP2659699B2 JP2659699B2 (en) 1997-09-30

Family

ID=17505256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59271817A Expired - Lifetime JP2659699B2 (en) 1984-12-25 1984-12-25 The semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2659699B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119960A (en) * 1985-11-20 1987-06-01 Fujitsu Ltd Complementary semiconductor integrated circuit device
US6292424B1 (en) 1995-01-20 2001-09-18 Kabushiki Kaisha Toshiba DRAM having a power supply voltage lowering circuit
US6351426B1 (en) 1995-01-20 2002-02-26 Kabushiki Kaisha Toshiba DRAM having a power supply voltage lowering circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54177877U (en) * 1978-06-02 1979-12-15
JPS5724575A (en) * 1980-07-22 1982-02-09 Toshiba Corp Solid state image pick up device
JPS59151389A (en) * 1983-02-18 1984-08-29 Hitachi Ltd Large scale integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54177877U (en) * 1978-06-02 1979-12-15
JPS5724575A (en) * 1980-07-22 1982-02-09 Toshiba Corp Solid state image pick up device
JPS59151389A (en) * 1983-02-18 1984-08-29 Hitachi Ltd Large scale integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119960A (en) * 1985-11-20 1987-06-01 Fujitsu Ltd Complementary semiconductor integrated circuit device
US6292424B1 (en) 1995-01-20 2001-09-18 Kabushiki Kaisha Toshiba DRAM having a power supply voltage lowering circuit
US6351426B1 (en) 1995-01-20 2002-02-26 Kabushiki Kaisha Toshiba DRAM having a power supply voltage lowering circuit

Also Published As

Publication number Publication date
JP2659699B2 (en) 1997-09-30

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term