JPS57109475A - Solid image pickup element - Google Patents
Solid image pickup elementInfo
- Publication number
- JPS57109475A JPS57109475A JP55186496A JP18649680A JPS57109475A JP S57109475 A JPS57109475 A JP S57109475A JP 55186496 A JP55186496 A JP 55186496A JP 18649680 A JP18649680 A JP 18649680A JP S57109475 A JPS57109475 A JP S57109475A
- Authority
- JP
- Japan
- Prior art keywords
- area
- type
- transfer
- charge
- channel stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To realize the high density of a picture element and to raise sensitivity and the quantity of operating charge, by forming a junction type overflow drain area on a channel stopper area and connecting this drain area to a transfer electrode. CONSTITUTION:On one main surface of the first conductive type, for instance a p type Si substrate 21, plural n type transfer channels 23R, 23G and 23B blocked in the horizontal direction by a p<+> type channel stopper area 22 are formed. On these transfer chennel,s an n<-> type channel stopper area 24 is formed. Also, on a part corresponding to a storage gate area of each channel of said area 24, a p<+> type overflow drain area 25 is formed so as to form p-n junction with said part. Subsequently, on a substrate 21, a bandlike transfer electrode 7 is arrayed and formed along a charge transfer direction A through an insulating film, and a part of said electrode is connected to the corresponding area 25. In this way, during the photodetecting period, if excess charge is generated in the channels 23R, 23G and 23B, the excess charge is absorbed by the area 25, and a stable state is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55186496A JPS57109475A (en) | 1980-12-26 | 1980-12-26 | Solid image pickup element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55186496A JPS57109475A (en) | 1980-12-26 | 1980-12-26 | Solid image pickup element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57109475A true JPS57109475A (en) | 1982-07-07 |
Family
ID=16189500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55186496A Pending JPS57109475A (en) | 1980-12-26 | 1980-12-26 | Solid image pickup element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57109475A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59135763A (en) * | 1983-01-03 | 1984-08-04 | ア−ルシ−エ− コ−ポレ−シヨン | Charge transfer type image sensor and method of producing same |
JPS6372153A (en) * | 1986-09-16 | 1988-04-01 | Fuji Photo Film Co Ltd | Solid-state image sensor |
JPS63228886A (en) * | 1987-03-18 | 1988-09-22 | Sanyo Electric Co Ltd | Method for driving solid-state image pickup element |
-
1980
- 1980-12-26 JP JP55186496A patent/JPS57109475A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59135763A (en) * | 1983-01-03 | 1984-08-04 | ア−ルシ−エ− コ−ポレ−シヨン | Charge transfer type image sensor and method of producing same |
JPH0512866B2 (en) * | 1983-01-03 | 1993-02-19 | Rca Corp | |
JPS6372153A (en) * | 1986-09-16 | 1988-04-01 | Fuji Photo Film Co Ltd | Solid-state image sensor |
JPS63228886A (en) * | 1987-03-18 | 1988-09-22 | Sanyo Electric Co Ltd | Method for driving solid-state image pickup element |
JPH0552111B2 (en) * | 1987-03-18 | 1993-08-04 | Sanyo Electric Co |
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