JPS5755672A - Solid-state image pickup device and its driving method - Google Patents

Solid-state image pickup device and its driving method

Info

Publication number
JPS5755672A
JPS5755672A JP55130517A JP13051780A JPS5755672A JP S5755672 A JPS5755672 A JP S5755672A JP 55130517 A JP55130517 A JP 55130517A JP 13051780 A JP13051780 A JP 13051780A JP S5755672 A JPS5755672 A JP S5755672A
Authority
JP
Japan
Prior art keywords
area
substrate
junction
electrode
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55130517A
Other languages
Japanese (ja)
Other versions
JPS6216599B2 (en
Inventor
Yasuo Ishihara
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP55130517A priority Critical patent/JPS6216599B2/ja
Priority claimed from DE8181107482T external-priority patent/DE3168333D1/en
Publication of JPS5755672A publication Critical patent/JPS5755672A/en
Publication of JPS6216599B2 publication Critical patent/JPS6216599B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14654Blooming suppression

Abstract

PURPOSE:To deplete the 1st area easily and to prevent a blooming phenomenon, by providing the junction area of a semiconductor substrate with the 1st and 2nd areas differing in junction depth, and forming a photoconductive element group in the 1st area, and forming a readout device of the converting element group in the 2nd area. CONSTITUTION:In a substrate semiconductor 26, the 1st area 27 having shallow junction of the opposite conduction type to the substrate and the 2nd area 28 having deep junction of the opposite conduction type to the substrate are formed. On the main surface of the area 27, a photoelectric conversion part 19 of p-n junction is formed and on the main surface of the area 28, a readout device of a transfer gate electrode 18 controlling signal charge transfer from the charge transfer electrode 17 of a vertical shift register and a conversion part 19 to the vertical shift register is formed. When a channel stop area 20 is held at a reference potential, the potential of the conversion part 19 is set to the difference between the potential of the electrode 18 and a threshold voltage to the electrode 18, and a reverse bias voltage applied to the substrate is varied from a low voltage to a high voltage to convert the area 27 into depletion one completely, thus preventing a blooming phenomenon.
JP55130517A 1980-09-19 1980-09-19 Expired JPS6216599B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130517A JPS6216599B2 (en) 1980-09-19 1980-09-19

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP55130517A JPS6216599B2 (en) 1980-09-19 1980-09-19
DE8181107482T DE3168333D1 (en) 1980-09-19 1981-09-21 Semiconductor photoelectric converter
EP19810107482 EP0048480B1 (en) 1980-09-19 1981-09-21 Semiconductor photoelectric converter
US06/304,301 US4527182A (en) 1980-09-19 1981-09-21 Semiconductor photoelectric converter making excessive charges flow vertically

Publications (2)

Publication Number Publication Date
JPS5755672A true JPS5755672A (en) 1982-04-02
JPS6216599B2 JPS6216599B2 (en) 1987-04-13

Family

ID=15036179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130517A Expired JPS6216599B2 (en) 1980-09-19 1980-09-19

Country Status (1)

Country Link
JP (1) JPS6216599B2 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589361A (en) * 1981-07-08 1983-01-19 Hitachi Ltd Solid state image pickup element
JPS58187082A (en) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd Driving method of solid-state image pickup device
JPS5965470A (en) * 1982-10-05 1984-04-13 Nec Corp Output structure of charge coupled device
JPS607766A (en) * 1983-06-27 1985-01-16 Sony Corp Manufacture of solid-state image pick-up element
JPS6020687A (en) * 1983-07-15 1985-02-01 Nippon Kogaku Kk <Nikon> Electronic still camera
JPS60169165A (en) * 1984-02-10 1985-09-02 Hitachi Ltd Solid image sensor element
JPS60170968A (en) * 1984-02-15 1985-09-04 Sony Corp Vertical type overflow image sensor
JPS61121580A (en) * 1984-11-16 1986-06-09 Matsushita Electronics Corp Solid-state image pick-up device
JPS61176150A (en) * 1985-01-31 1986-08-07 Toshiba Corp Solid-state image pickup device
JPS61224352A (en) * 1985-03-29 1986-10-06 Matsushita Electronics Corp Solid-state image pickup device
JPS61198110U (en) * 1985-06-03 1986-12-11
JPS61281790A (en) * 1985-06-07 1986-12-12 Hitachi Ltd Solid-state image pickup device
JPS62156870A (en) * 1985-12-28 1987-07-11 Matsushita Electronics Corp Manufacture of solid-state image pickup device
JPS63142858A (en) * 1986-12-05 1988-06-15 Matsushita Electronics Corp Solid-state image sensing device
JPH04212460A (en) * 1990-01-29 1992-08-04 Gold Star Electron Co Ltd Manufacture of photodiode for ccd image sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724576A (en) * 1980-07-22 1982-02-09 Toshiba Corp Solid state image pick up device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724576A (en) * 1980-07-22 1982-02-09 Toshiba Corp Solid state image pick up device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589361A (en) * 1981-07-08 1983-01-19 Hitachi Ltd Solid state image pickup element
JPS58187082A (en) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd Driving method of solid-state image pickup device
JPH0414551B2 (en) * 1982-04-26 1992-03-13 Matsushita Electric Ind Co Ltd
JPS5965470A (en) * 1982-10-05 1984-04-13 Nec Corp Output structure of charge coupled device
JPS607766A (en) * 1983-06-27 1985-01-16 Sony Corp Manufacture of solid-state image pick-up element
JPH0522397B2 (en) * 1983-06-27 1993-03-29 Sony Corp
JPS6020687A (en) * 1983-07-15 1985-02-01 Nippon Kogaku Kk <Nikon> Electronic still camera
JPH0432589B2 (en) * 1983-07-15 1992-05-29
JPS60169165A (en) * 1984-02-10 1985-09-02 Hitachi Ltd Solid image sensor element
JPS60170968A (en) * 1984-02-15 1985-09-04 Sony Corp Vertical type overflow image sensor
JPS61121580A (en) * 1984-11-16 1986-06-09 Matsushita Electronics Corp Solid-state image pick-up device
JPS61176150A (en) * 1985-01-31 1986-08-07 Toshiba Corp Solid-state image pickup device
JPS61224352A (en) * 1985-03-29 1986-10-06 Matsushita Electronics Corp Solid-state image pickup device
JPS61198110U (en) * 1985-06-03 1986-12-11
JPS61281790A (en) * 1985-06-07 1986-12-12 Hitachi Ltd Solid-state image pickup device
JPS62156870A (en) * 1985-12-28 1987-07-11 Matsushita Electronics Corp Manufacture of solid-state image pickup device
JPS63142858A (en) * 1986-12-05 1988-06-15 Matsushita Electronics Corp Solid-state image sensing device
JPH04212460A (en) * 1990-01-29 1992-08-04 Gold Star Electron Co Ltd Manufacture of photodiode for ccd image sensor

Also Published As

Publication number Publication date
JPS6216599B2 (en) 1987-04-13

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