JPS5870685A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS5870685A JPS5870685A JP56169132A JP16913281A JPS5870685A JP S5870685 A JPS5870685 A JP S5870685A JP 56169132 A JP56169132 A JP 56169132A JP 16913281 A JP16913281 A JP 16913281A JP S5870685 A JPS5870685 A JP S5870685A
- Authority
- JP
- Japan
- Prior art keywords
- section
- optical black
- solid
- picture element
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 13
- 239000011521 glass Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- -1 chromium oxide Chemical class 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Abstract
Description
【発明の詳細な説明】 本発明は２次元固体撮像装置の改善に関する。[Detailed description of the invention] The present invention relates to improvements in two-dimensional solid-state imaging devices.
第１図に、Ｐ−Ｎ接合型光電変換用ホト・ダイオードに
蓄積された電荷を電荷結合素子で転送し出力信号として
取り出す固体撮像装置の構成図を示す。第１図において
、１は光電変換用Ｐ −Ｎ接合型ホト・ダイオード；
２は電荷結合素子で構成された垂直転送レジスタ、３は
光電変換用ホト・ダイオード１で蓄積され九電荷を垂直
転送レジスタ２に転送する為のトランスファゲート、４
は垂直レジスタで送られた電荷を水平方向に転送する為
の水平転送レジスタ、５は出力増幅器である。FIG. 1 shows a configuration diagram of a solid-state imaging device in which charges accumulated in a P-N junction type photoelectric conversion photodiode are transferred by a charge-coupled device and extracted as an output signal. In FIG. 1, 1 is a P-N junction type photodiode for photoelectric conversion;
2 is a vertical transfer register composed of a charge-coupled device; 3 is a transfer gate for transferring nine charges accumulated in the photodiode 1 for photoelectric conversion to the vertical transfer register 2; 4
5 is a horizontal transfer register for horizontally transferring the charge sent by the vertical register, and 5 is an output amplifier.
第１図において左の方の一点鎖線で囲んだ領域６は、受
光部として働く有効絵素部で、ホ）−ダイオード１の上
は光に対して開口しである。一方、右の方の一点鎖線で
囲んだ領域７は、黒レベル基準信号を取る為にホトｅダ
イオード１の上の光を遮蔽しである、いわゆるオプティ
カルブラック部である。第１図の構成の固体撮像装置の
動作は、有効絵素部６の光電変換用ホト・ダイオード１
で光電変換された電荷をトラ・メ与ゲート３七通して垂
直転送レジスタ２に転送し、次に垂直転送された電荷は
さらに水平転送レジスタ４で転送され、出力増幅器５を
通して１ビツトずつ直列に信号が出される。上記動作中
には、有効絵素部６の各ビット信号に引続いて同一水平
ラインのオプティカルブラック部７の信号が出力される
が、このオプティカルブラック部７の信号が黒レベル基
準信号として使用される。In FIG. 1, a region 6 surrounded by a dashed line on the left side is an effective picture element portion that serves as a light receiving portion, and e) the top of the diode 1 is open to light. On the other hand, the area 7 on the right surrounded by the dashed line is a so-called optical black area that blocks the light above the photodiode 1 in order to obtain a black level reference signal. The operation of the solid-state imaging device having the configuration shown in FIG.
The photoelectrically converted charge is transferred to the vertical transfer register 2 through the transfer gate 3, and then the vertically transferred charge is further transferred to the horizontal transfer register 4, and serially transmitted one bit at a time through the output amplifier 5. A signal is given. During the above operation, a signal from the optical black section 7 on the same horizontal line is output following each bit signal from the effective picture element section 6, but this signal from the optical black section 7 is used as a black level reference signal. Ru.
次に従来のオプティカルブラック部７のセルの断面図を
第２図に示す。８はＰ型半導体基板、ｆは光電変換用Ｎ
型拡散層、３′は多結晶シリコンで作られたトランスフ
ァゲート、９は垂直レジスタの電荷転送領域となるＮ型
拡散層、１０は絶縁用Ｐ型拡散層、１１は垂直レジスタ
の電荷転送用多結晶シリコン電極、１２は絶縁酸化膜、
１３は光遮蔽用アルミニウムでホト・ダイオード１′ヲ
含めて全体をおおっている。尚、有効絵素部６において
は、ホ）−ダイオード１の上の光Ｍ蔽用アルミニウム１
３は開口して光を受けるようＫしである。Next, a sectional view of a cell of the conventional optical black section 7 is shown in FIG. 8 is a P-type semiconductor substrate, f is N for photoelectric conversion
3' is a transfer gate made of polycrystalline silicon, 9 is an N-type diffusion layer which becomes a charge transfer region of the vertical register, 10 is a P-type diffusion layer for insulation, and 11 is a charge transfer region of the vertical register. crystalline silicon electrode, 12 is an insulating oxide film,
Reference numeral 13 is a light-shielding aluminum covering the entire structure including the photodiode 1'. In addition, in the effective picture element part 6, the light M shielding aluminum 1 above the diode 1 is
3 is open to receive light.
本来、オプティカルブラック部７は、光ｔ−遮蔽した暗
時の状態での有効絵素部６からの信号レベルとの信号レ
ベルに差があってはならない。しかし第２図に示す構造
においては、暗時において有効絵素部６とオプティカル
ブラック部７の信号レベルに差が生じやすい。有効絵素
部６とオプティカルブラック部７の構造の差はホト・ダ
イオード１の上に光遮蔽用のアルミニウム１３が有るか
無いかの違いであるが、この差がウェハー製造工程中の
アルミニウム蒸着、アルミニウム選択除去、アルミニウ
ム熱処理の各工１１ヲ通すことによシアルミニウムから
発生する活性化水素の影響等でシリコン界面の状態に差
が生じ、結果的に出力電圧の差になって現われる。常、
温の暗時において、有効絵素部６とオプティカルブラッ
ク部７との出力信号に差があれば、高温にするとこの差
はさらに広がり、出力信号のＳ／Ｎ比を減少させ、画像
特性の劣化をきたす。特に、カラー用２次元固体撮像装
置の場合は色調がくずれ見苦しいものとなる。Originally, there should be no difference in signal level between the optical black section 7 and the signal level from the effective picture element section 6 in a dark state where light is shielded. However, in the structure shown in FIG. 2, a difference in signal level between the effective picture element section 6 and the optical black section 7 tends to occur in the dark. The difference in structure between the effective picture element part 6 and the optical black part 7 is whether or not there is aluminum 13 for light shielding on the photodiode 1, and this difference is due to the aluminum evaporation during the wafer manufacturing process, By going through each process 11 of aluminum selective removal and aluminum heat treatment, a difference occurs in the state of the silicon interface due to the influence of activated hydrogen generated from the aluminum, resulting in a difference in output voltage. Always,
If there is a difference in the output signals between the effective pixel area 6 and the optical black area 7 in the dark at a high temperature, this difference will further widen when the temperature is increased, reducing the S/N ratio of the output signal and deteriorating the image characteristics. cause In particular, in the case of a color two-dimensional solid-state imaging device, the color tone is distorted and the image becomes unsightly.
本発明では、上記有効絵素部とオプティカルブラック部
の暗時出力の差を無くシ、よってＳ／Ｎ特性のよい固体
撮偉装置を提供するものである。The present invention eliminates the difference in dark output between the effective picture element section and the optical black section, thereby providing a solid-state imaging device with good S/N characteristics.
本発明によれば、半導体基板上にホト・ダイオードから
なる複数の光電変換部を有し、光電変換部に蓄積され九
電荷を信号電荷転送用の電荷結合素子で順次転送し出力
信号を取り出す２次元固体撮像装置において、受光部と
同一構造の所定のホト・ダイオードの上および信号電荷
転送用の電荷結合素子上の光遮蔽用アルミニウム層の上
を光遮蔽効果を有するフィルタでおおい、黒レベル基準
信号を取り田すことを特徴とする２次元固体撮像装置を
得る。According to the present invention, a plurality of photoelectric conversion sections made of photodiodes are provided on a semiconductor substrate, and nine charges accumulated in the photoelectric conversion sections are sequentially transferred by a charge-coupled device for signal charge transfer to extract an output signal. In a 3D solid-state imaging device, a filter with a light shielding effect is covered over a predetermined photodiode with the same structure as the light receiving section and over the light shielding aluminum layer on the charge coupled device for signal charge transfer, and the black level standard is A two-dimensional solid-state imaging device is obtained which is characterized by receiving signals.
すなわち、本発明では、従来のウエノ・−製造工程中の
材料であるアルミニウムによる光遮蔽によりオプティカ
ルブラック部を構成するのではなく、オプティカルブラ
ンク部のホト・ダイオードも有効絵素部と全く同一の開
口をアルミニウムによる光遮蔽に備えておき、オプティ
カルブラック部分となる部分の上を光遮蔽用フィルタで
更におおうことによジオブチイカルブラツクの機能を持
たせるものである。That is, in the present invention, instead of forming the optical black part by shielding light with aluminum, which is a material used in the conventional Ueno manufacturing process, the photodiode in the optical blank part also has the same aperture as the effective picture element part. The optical black part is further covered with a light shielding filter to provide the function of a geophysical black.
第３図は本発明の一実施例でオプティカルブラック部の
断面図である。記号は第２図と共通である。ウェハーの
構造で従来の第２図と異なるところはホト・ダイオード
１の上のアルミニウムがホト・レジスト工程を周込た選
択除去により取シ除かれ、有効絵素部と同一構造となっ
ている。１４はフィルタの透明ガラス基板である。１５
は光遮蔽用物質で、この光遮蔽用物質は光を遮蔽する為
のもので、たとえば酸化クロム等の金属酸化物や、有機
物質の黒色染色物、あるいはこれら物質を層状に重ねた
もので良い。オプティカルブラック部の光遮蔽物はカラ
ーセンサー用固体撮偉装置においてはカラーフィルタに
同時に作りこめば良く、白黒用センサーにおいてはオプ
ティカルブラック部以外は透明ガラス基板のままにして
おいても良い。１６はフィルタとベレットを貼りつける
透明な接着剤でたとえばエポキシ系樹脂である。FIG. 3 is a sectional view of an optical black part in one embodiment of the present invention. The symbols are the same as in Figure 2. The difference in the structure of the wafer from the conventional one shown in FIG. 2 is that the aluminum above the photodiode 1 is removed by selective removal including a photoresist process, resulting in the same structure as the effective picture element area. 14 is a transparent glass substrate of the filter. 15
is a light-shielding material, and this light-shielding material is for shielding light, and may be, for example, a metal oxide such as chromium oxide, a black dyed organic material, or a layered layer of these materials. . In a solid-state imaging device for a color sensor, the light shielding material for the optical black portion may be simultaneously fabricated in the color filter, and in a monochrome sensor, the transparent glass substrate may be left as is except for the optical black portion. Reference numeral 16 denotes a transparent adhesive for pasting the filter and pellet, such as epoxy resin.
第４図は本発明を適用した２次元固体撮像装置の一例の
平面図である。１７は固体撮偉装置のチップ、１８はポ
ンディングパッドである。１４は第３図に示したフィル
タの透明ガラス基板で有効絵素部１９とオプティカルブ
ラック部２０とを有している。固体撮偉装置のチップ１
７の有効絵素部上に載置されるフィルタの有効絵素部１
９は、カラー撮像装置の場合はここにカラーフィルタア
レイを作り、白黒撮像装置の場合は透明のままと−して
おく。またオプティカルブラック部上に載置されるフィ
ルタのオプティカルブラック部２０は光３ｋ Ｅ物質が
塗布されている。FIG. 4 is a plan view of an example of a two-dimensional solid-state imaging device to which the present invention is applied. 17 is a chip of a solid-state imaging device, and 18 is a bonding pad. 14 is a transparent glass substrate of the filter shown in FIG. 3, and has an effective picture element section 19 and an optical black section 20. Solid-state imaging device chip 1
Effective picture element part 1 of the filter placed on the effective picture element part 7
9 creates a color filter array here in the case of a color imaging device, and leaves it transparent in the case of a monochrome imaging device. Further, the optical black part 20 of the filter placed on the optical black part is coated with optical 3kE material.
不発明ではペレット状態において有効絵素部とオプティ
カルブラック部の構造が全く同一なので、暗時の信号出
力は常温においてはもちろんのこと高温においても有効
絵素部とオプティカルブラック部の出力信号に差が生じ
ない。従ってオプティカルブラック部の信号は愚レベル
基準信号として、十分機能をはだし、温度変化に対して
もＳ／Ｎ比の皮い安定した画像の得られる２次元面体撮
像装置が実現できる。Since the structure of the effective pixel part and the optical black part is exactly the same in the pellet state, there is a difference in the signal output in the dark between the effective pixel part and the optical black part not only at room temperature but also at high temperature. Does not occur. Therefore, the signal of the optical black portion functions sufficiently as a low level reference signal, and it is possible to realize a two-dimensional plane imaging device that can obtain an image with a stable S/N ratio even when the temperature changes.
第１図は固体撮像装置の構底図である。
１・・・・・・光電変換用ホト・ダイオード、２・・・
・・・ａＭ転送レジスタ、３・・・・・・トランス７ア
ゲート、卜・・・・水平転送レジスタ、５・・・・・・
出力、６・・・・・・有効絵素部、７・・・・・・オプ
ティカルブラック部、第２図は従来の固体撮像装置のオ
プティカルブランク部の断面図である。
第３図は本発明の一実施例による固体撮像装置のオプテ
ィカルブラック部の断面図である。
１′、９・・・・・・Ｎ型拡散層、８・・・・・・Ｐ型
半導体基板、１０・・・・・・Ｐ型拡散層、３’、１１
・・・・・・ポリシリコン電極、１２・・・・・・絶縁
酸化膜、１３・・・・・・アルミニウム、１４・・・・
・・フィルタガラス基板、１５・旧・・光遮蔽物質、１
６・・・・・・接着剤、
第４図は不発８Ａヲ適用した固体撮像装置の平面図であ
る。
１４・・・・・・フィルタガラス基板、１７・・・・・
・固体撮像装置のチップ、１８・・・・・・ボンディン
グバット、１９・・・・・・有効絵素部、２０・・・・
・・オプティカルブランク部。
不２父
峯３ＶFIG. 1 is a bottom view of the solid-state imaging device. 1...Photodiode for photoelectric conversion, 2...
...aM transfer register, 3...Transformer 7 agate, 卜...horizontal transfer register, 5...
Output, 6...Effective pixel portion, 7...Optical black portion, FIG. 2 is a sectional view of an optical blank portion of a conventional solid-state imaging device. FIG. 3 is a sectional view of an optical black portion of a solid-state imaging device according to an embodiment of the present invention. 1', 9...N-type diffusion layer, 8...P-type semiconductor substrate, 10...P-type diffusion layer, 3', 11
... Polysilicon electrode, 12 ... Insulating oxide film, 13 ... Aluminum, 14 ...
・・Filter glass substrate, 15・Old・・Light shielding material, 1
6...adhesive Figure 4 is a plan view of a solid-state imaging device to which the misfire 8A is applied. 14...Filter glass substrate, 17...
・Chip of solid-state imaging device, 18...Bonding butt, 19...Effective pixel portion, 20...
...Optical blank section. Fu2chi Mine 3V
Claims (1)
蓄積された電荷′を信号電荷転送用の電荷結合素子で順
次転送し出力信号を取り出す固体撮像装置において、前
記光電変換部は同じ構造の光電変換素子からなる受光部
と黒レベル基準信号導出部とを有し、該黒レベル導路部
は光遮蔽効果を有するフィルタでおおわれていることを
特徴とする固体撮像装置。In a solid-state imaging device that has a plurality of photoelectric conversion sections on a conductor substrate and sequentially transfers charges ' accumulated in the photoelectric conversion sections using a charge-coupled device for signal charge transfer to extract an output signal, the photoelectric conversion sections are 1. A solid-state imaging device comprising a light receiving section and a black level reference signal deriving section made of photoelectric conversion elements having the same structure, and the black level guide section is covered with a filter having a light shielding effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169132A JPS5870685A (en) | 1981-10-22 | 1981-10-22 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169132A JPS5870685A (en) | 1981-10-22 | 1981-10-22 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5870685A true JPS5870685A (en) | 1983-04-27 |
Family
ID=15880868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56169132A Pending JPS5870685A (en) | 1981-10-22 | 1981-10-22 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5870685A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63273352A (en) * | 1987-04-30 | 1988-11-10 | Nec Corp | Solid-state image sensing device |
| JPH05343656A (en) * | 1992-06-09 | 1993-12-24 | Matsushita Electron Corp | Image sensor |
| US5455624A (en) * | 1991-06-12 | 1995-10-03 | Sharp Kabushiki Kaisha | Solid image pick-up element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49119522A (en) * | 1973-03-15 | 1974-11-15 | ||
| JPS5378111A (en) * | 1976-12-22 | 1978-07-11 | Toshiba Corp | Charge transfer type pick up unit |
| JPS5665577A (en) * | 1979-11-01 | 1981-06-03 | Nec Corp | Solidstate image sensor |
-
1981
- 1981-10-22 JP JP56169132A patent/JPS5870685A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49119522A (en) * | 1973-03-15 | 1974-11-15 | ||
| JPS5378111A (en) * | 1976-12-22 | 1978-07-11 | Toshiba Corp | Charge transfer type pick up unit |
| JPS5665577A (en) * | 1979-11-01 | 1981-06-03 | Nec Corp | Solidstate image sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63273352A (en) * | 1987-04-30 | 1988-11-10 | Nec Corp | Solid-state image sensing device |
| US5455624A (en) * | 1991-06-12 | 1995-10-03 | Sharp Kabushiki Kaisha | Solid image pick-up element |
| JPH05343656A (en) * | 1992-06-09 | 1993-12-24 | Matsushita Electron Corp | Image sensor |
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