JPS63164271A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS63164271A JPS63164271A JP61308283A JP30828386A JPS63164271A JP S63164271 A JPS63164271 A JP S63164271A JP 61308283 A JP61308283 A JP 61308283A JP 30828386 A JP30828386 A JP 30828386A JP S63164271 A JPS63164271 A JP S63164271A
- Authority
- JP
- Japan
- Prior art keywords
- light
- screening layers
- electrodes
- layers
- light screening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910021332 silicide Inorganic materials 0.000 abstract description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 2
- 238000012216 screening Methods 0.000 abstract 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 239000012535 impurity Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は固体撮像装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a solid-state imaging device.
（従来の技術）
従来、代表的な光導電膜膜積層型固体撮像装置としては
、第２図に示す白黒用インターライン転送方式で光導！
Ｅ膜にＨ型アモルファスシリコン膜ａ−８ｉ：ＨＩ３を
用いたアモルファスシリコン積層型ＣＯＤイメージセン
サが知られている。ここで第２図はその断面図である。(Prior Art) Conventionally, a typical photoconductive film stacked solid-state imaging device uses a black-and-white interline transfer method as shown in FIG.
An amorphous silicon stacked COD image sensor using an H-type amorphous silicon film a-8i:HI3 as an E film is known. Here, FIG. 2 is a sectional view thereof.
図中ｌはｐ型シリコン半導体基板である。この基板１の
表面には、光入射により生成した信号電荷を蓄積ダイオ
ードに蓄積するためのＶ型の不純物層２とＮ＋１型の不
純物層５、蓄積ダイオードに蓄積された信号電荷を読出
して垂直ＣＯＤにおけるチャネルを形成するためのＮｏ
−の不純物層ａ、 ｅ ３１ ”型の不純物層（チャネ
ル拳ストッパ） ４１ ｅ４１が形成されている。前記
基板１上には絶縁ｌｌ！６ｔ −６ｔが形成され、該絶
縁膜６１−６雪には第１の多結晶シリコンゲート電極７
１゜７！と第２の多結晶シリコンゲート電極８１＋８ｔ
が段階的に所定距離おいて設けられ、また不純物層５に
一部が接合された第１電極例えばＡＩ電極１４１４、が
形成されている。さらにこの８ｇ１Ａｌｔ極１４ｔ、１
４ｙの一部及び絶縁膜１０．．１０．の一部の表’ｆＲ
４ｃ第２’に極、例えばＡＩＮＮ ｌｌｓ 、 ｌｉｔ
が形成されている。さらにアモルファスシリコン先導１
を膜１２が形成され、その上に透明電極として工■電極
１３が形成される。さらにその上に光シールド層として
Ｃｒ Ｍ １６．．１６．が形成される。In the figure, l is a p-type silicon semiconductor substrate. On the surface of this substrate 1, there are a V-type impurity layer 2 and an N+1-type impurity layer 5 for accumulating signal charges generated by light incidence in a storage diode, and a vertical COD layer for reading signal charges accumulated in the accumulation diode. No. to form a channel in
- impurity layers a, e31'' type impurity layers (channel stopper) 41e41 are formed.Insulation ll!6t-6t is formed on the substrate 1, and the insulating film 61-6 is is the first polycrystalline silicon gate electrode 7
1°7! and second polycrystalline silicon gate electrode 81+8t
are provided stepwise at a predetermined distance, and a first electrode, for example, an AI electrode 1414, which is partially bonded to the impurity layer 5 is formed. Furthermore, this 8g1Alt pole 14t, 1
4y and the insulating film 10. ．． 10. Some table of 'fR
4c 2nd pole, e.g. AINN lls, lit
is formed. Furthermore, amorphous silicon lead 1
A film 12 is formed, and a transparent electrode 13 is formed thereon. Furthermore, CrM 16. ．． 16. is formed.
上記したような構造からなる白黒用インターライン転送
方式のアモルファスシリコン積層型ＣＯＤ・−ノージセ
ンサにおいては、光シールド層１６．。In the black-and-white interline transfer type amorphous silicon laminated COD sensor having the above-described structure, the optical shield layer 16. .
１６鵞がアモルファスシリコン膜１２上に形成されるた
め、アモルファスシリコン膜１２に入射した光がアモル
ファスシリコン膜内で散乱するため、充電変換されなか
った光の一部が第２電極１１．。16 is formed on the amorphous silicon film 12, so that the light incident on the amorphous silicon film 12 is scattered within the amorphous silicon film, so that a portion of the light that has not been charged and converted is transferred to the second electrode 11. .
１１、の間隙を通して、シリコン基板１内に到達しそこ
で光電変換され、隣接画素のチやネル３１ ＋３、等に
その電子が到達する結果、スミアを発生させ問題となる
。また、光シールドのためにＣｒ層１６、、＋６．を形
成しなければならず、工程が多くなる。The electrons reach the inside of the silicon substrate 1 through the gap 11 and are photoelectrically converted there, and as a result, the electrons reach the channels and channels 31+3 of adjacent pixels, causing smearing and causing a problem. Further, Cr layers 16, , +6 . must be formed, which increases the number of steps.
（発明が解決しようとする問題点）
前項で記載したように、アモルファスシリコン膜１２上
に光シールド層１６．，１６．を形成するのは光シール
ドの効果が弱く、また光シールド層１６．。(Problems to be Solved by the Invention) As described in the previous section, the light shield layer 16. is formed on the amorphous silicon film 12. ,16. Forming the light shield layer 16. has a weak light shielding effect, and the light shield layer 16. .
１６！形成のため工程数がその分増える。本発明は上述
した従来装置の欠点を改良したもので、光シールドの効
果を向上し、スミアを少なくすることができ、しかも光
シールド層１６．，１６．形成のために工程数を増やす
必要のない装置を提供することを目的とする。16! The number of steps required for formation increases accordingly. The present invention improves the above-mentioned drawbacks of the conventional device, improves the light shielding effect, reduces smear, and furthermore, the light shield layer 16. ,16. The object is to provide an apparatus that does not require an increase in the number of steps for formation.
（問題点を解決するための手段） 本発明は嘱１１！極９．，９．の材料にポリサイド。 (Means for solving problems) This invention is 11 years old! Extreme 9. ,9. polycide material.
メタルシリサイド、等の光の透過の少ない材料を選び、
舗１［極９．，９．と同時に光シールド層１５１゜１５
、を形成し、シリコン基板１により近くに光シールド層
１ｓ１．ｘ５ｔを設ける。Select a material with low light transmission, such as metal silicide,
store 1 [pole 9. ,9. At the same time, the light shield layer 151゜15
, and a light shield layer 1s1 . is formed closer to the silicon substrate 1. x5t is provided.
（作用）
本発明により、アモルファスシリコン膜１２を通過し、
主に第２ ［、極１１ｔ、１１２間隙を介して、シリコ
ン基板１に到達する光は、光シールド層１５ｚ１５＊ｆ
こより低減することができ、しかも光シールド層１５１
．ｉ５を形成のために工程を特に増やす必要がない。(Function) According to the present invention, passing through the amorphous silicon film 12,
The light that reaches the silicon substrate 1 mainly through the gap between the second poles 11t and 112 is transmitted through the light shield layer 15z15*f.
This can be reduced more than this, and the optical shield layer 151
．． There is no need to particularly increase the number of steps to form i5.
（実施例）
まず、Ｐ型シリコン基板１表面に公知の所定の方法によ
り選択拡散、エツチング処理等を行ない光入射１とより
生成した信号電荷を蓄積ダイオードに蓄積するためのず
め不純物層２、蓄積ダイオードに蓄積された信号電荷を
読出して垂直ＣＯＤにおけるチャネルを形成するための
ｒ型の不純物層３ｔ、３ｔを形成した。つづいてＮの不
純物層２上の一部の絶縁膜６１＊６＊をシリコン基板表
面までエツチングし、イオン注入法によりＮ の不純物
層５を形成した後、第１電極９．．９．及び光シールド
層１５１．１５１をモリブデンシリサイドとその下の多
結晶シリコンとの積層膜から成るポリサイドにて形成し
た。さらに絶縁膜１０をその上に形成した。(Example) First, selective diffusion, etching, etc. are performed on the surface of a P-type silicon substrate 1 by a known predetermined method, and a doped impurity layer 2 is formed to store signal charges generated by light incidence 1 in a storage diode. R-type impurity layers 3t, 3t were formed for reading signal charges accumulated in the storage diode and forming a channel in the vertical COD. Subsequently, a portion of the insulating film 61*6* on the N impurity layer 2 is etched to the surface of the silicon substrate, and an N 2 impurity layer 5 is formed by ion implantation, and then the first electrode 9. ．． 9. A light shield layer 151.151 was formed of polycide consisting of a laminated film of molybdenum silicide and polycrystalline silicon underneath. Furthermore, an insulating film 10 was formed thereon.
（５ｇ１図（ａ）図示）
次いで、前記絶縁膜ｌＯを開口し、第２１を極例えばＡ
ｌＳｉ電極１１ｔ＊１１ｔを形成した（第１図φ）図示
）。(Illustrated in Figure 5g1 (a)) Next, the insulating film lO is opened and the 21st electrode is opened, for example, A.
An lSi electrode 11t*11t was formed (as shown in FIG. 1 φ).
次いで、Ｈ型のアモルファスシリコンａ−８ｉ：ＨＩ３
を例えばグロー放ｚ ｃｖｎ法にて形成後、■■電極１
３を形成した（第１図（Ｃ））。Next, H-type amorphous silicon a-8i: HI3
For example, after forming the
3 was formed (Fig. 1(C)).
本発明に関わるアモルファスシリコン膜積層型ＣＣＤイ
メージセンサは、白黒用インターライン転送方式に関わ
らず、カラー用の１次元、２次元センサのアモルファス
シリコン膜積層型ＣＣＤイメージセンサにも適用できる
。また実施例ではポリサイド膜を用いたが、光の透過の
少ない膜で、それ自身導電性を有するものならば適期可
能である。The amorphous silicon film stacked CCD image sensor according to the present invention can be applied to amorphous silicon film stacked CCD image sensors for color one-dimensional and two-dimensional sensors, regardless of the interline transfer method for black and white. Furthermore, although a polycide film was used in the embodiment, any film that transmits little light and is itself conductive can be used.
以上発明した如く、スミャ等を防止しつつ工程の簡略化
を図る事が可能となる。As invented above, it is possible to simplify the process while preventing smearing and the like.
第１図は、本発明の実施例である白黒用インターライン
転送方式アモルファスシリコン膜積層型ＣＣＤイメージ
センサの製造工程を示す断面図、第２図は従来の白黒用
インターライン転送方式アモルファスシリコン膜積層型
ＣＣＤイメージセンサの断面図である。
１・・・Ｐ型シリコン半導体基板、２・・・Ｎ中型の不
純物層（蓄積ダイオード）、３１．５・・・ｒ型の不純
物層（チャネル）、４ｔ ＊Ｇ・・・ｒ型の不純物層（
チャネル・ストッパー）、５・・・Ｎ 型の不純物層（
蓄積ダイオード）、６．．６．・・・絶縁膜、７．．７
．・・・第１の多結晶シリコン・ゲートを極％ ｓ、
、ｓ、・・・ｗｃ２の多結晶シリコン・ゲート電極％９
＋ｔ％・・・第１′ｖｔ極（Ｍｅ−８ｉポリサイド電極
）、１０ ｒ １０１ ＠ １０＠ ”’絶縁膜、”１
＋１１２・・・第２電極（Ａｌ−８ｉ電極）、１２・・
・Ｈ型アモルファスシリコン膜、１３・・・ＩＴＯ電極
、１４１ ＠ １４＠・・・第１電極（ｋｌ−８ｉ電極
）、１５ｓ＊１５ｇ・・・光シールド層（Ｍｏ−８ｉポ
リサイド）、１６．。
１６、・・・光シールド層（Ｃｒ）。FIG. 1 is a cross-sectional view showing the manufacturing process of a monochrome interline transfer type amorphous silicon film stacked CCD image sensor according to an embodiment of the present invention, and FIG. 2 is a conventional black and white interline transfer type amorphous silicon film stacked CCD image sensor. 1 is a cross-sectional view of a type CCD image sensor. 1... P-type silicon semiconductor substrate, 2... N medium-sized impurity layer (storage diode), 31.5... r-type impurity layer (channel), 4t *G... r-type impurity layer (
channel stopper), 5...N type impurity layer (
storage diode), 6. ．． 6. ...Insulating film, 7. ．． 7
．． ...the first polycrystalline silicon gate is extremely %s,
, s, ...wc2 polycrystalline silicon gate electrode%9
+t%...1st 'vt electrode (Me-8i polycide electrode), 10 r 101 @ 10 @ ``'' Insulating film, ``1
+112...Second electrode (Al-8i electrode), 12...
- H-type amorphous silicon film, 13... ITO electrode, 141 @ 14 @... first electrode (kl-8i electrode), 15s*15g... light shield layer (Mo-8i polycide), 16. . 16,... Light shield layer (Cr).
Claims (1)
おいて、回路基板面への光漏れを防止する光シールド層
を画素電極と同層の導電膜で設けた事を特徴とする固体
撮像装置。A two-story solid-state imaging device in which a photoconductive film is provided on a circuit board, characterized in that a light shield layer for preventing light leakage to the circuit board surface is provided with a conductive film in the same layer as the pixel electrode. Imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61308283A JP2514941B2 (en) | 1986-12-26 | 1986-12-26 | Method of manufacturing solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61308283A JP2514941B2 (en) | 1986-12-26 | 1986-12-26 | Method of manufacturing solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63164271A true JPS63164271A (en) | 1988-07-07 |
| JP2514941B2 JP2514941B2 (en) | 1996-07-10 |
Family
ID=17979168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61308283A Expired - Lifetime JP2514941B2 (en) | 1986-12-26 | 1986-12-26 | Method of manufacturing solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2514941B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04152673A (en) * | 1990-10-17 | 1992-05-26 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JP2006222278A (en) * | 2005-02-10 | 2006-08-24 | Fuji Photo Film Co Ltd | Solid-state imaging device |
| WO2013001809A1 (en) * | 2011-06-30 | 2013-01-03 | パナソニック株式会社 | Solid-state image pickup device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154977A (en) * | 1982-03-10 | 1983-09-14 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element |
| JPS6051376A (en) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | Solid-state image pickup device |
| JPS60262459A (en) * | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | Manufacture of solid-state image pickup device |
-
1986
- 1986-12-26 JP JP61308283A patent/JP2514941B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58154977A (en) * | 1982-03-10 | 1983-09-14 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element |
| JPS6051376A (en) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | Solid-state image pickup device |
| JPS60262459A (en) * | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | Manufacture of solid-state image pickup device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04152673A (en) * | 1990-10-17 | 1992-05-26 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JP2006222278A (en) * | 2005-02-10 | 2006-08-24 | Fuji Photo Film Co Ltd | Solid-state imaging device |
| JP4538336B2 (en) * | 2005-02-10 | 2010-09-08 | 富士フイルム株式会社 | Solid-state imaging device |
| WO2013001809A1 (en) * | 2011-06-30 | 2013-01-03 | パナソニック株式会社 | Solid-state image pickup device |
| US9263482B2 (en) | 2011-06-30 | 2016-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Solid-state image pickup device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2514941B2 (en) | 1996-07-10 |
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