JPS57115551A - Photoconductive material - Google Patents
Photoconductive materialInfo
- Publication number
- JPS57115551A JPS57115551A JP56002277A JP227781A JPS57115551A JP S57115551 A JPS57115551 A JP S57115551A JP 56002277 A JP56002277 A JP 56002277A JP 227781 A JP227781 A JP 227781A JP S57115551 A JPS57115551 A JP S57115551A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoconductive
- nonphotoconductive
- amorphous silicon
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Abstract
PURPOSE:To obtain a photoconductive material resistant to all the environmetal conditions and superior in photosensitivity, durability, etc., by providing a nonphotoconductive surface barrier layer containing Si, C, and H, for hindering injection of surface charge into a photoconductive layer, on a photoconductive amorphous silicon layer formed on a substrate. CONSTITUTION:A photoconductive layer 102 containing H and halogen, or either of them in addition to a principal component of Si is formed on a conductive substrate 101, and on the layer 102 a nonphotoconductive amorphous silicon layer 103 containing 40-90atom% C and 2-35atom% H is formed to 3-5,000nm thickness. This layer 103 hinders injection of charge on the surface 104 into the layer 102, thus permitting the obtained photoreceptor 100 to have stabilized electrical, optical, and photoelectrical characteristics and high spectral sensitivity covering almost all the visible light region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56002277A JPS57115551A (en) | 1981-01-09 | 1981-01-09 | Photoconductive material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56002277A JPS57115551A (en) | 1981-01-09 | 1981-01-09 | Photoconductive material |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57077672A Division JPS5828751A (en) | 1982-05-10 | 1982-05-10 | Manufacture of photoconductive material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57115551A true JPS57115551A (en) | 1982-07-19 |
JPS6410069B2 JPS6410069B2 (en) | 1989-02-21 |
Family
ID=11524866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56002277A Granted JPS57115551A (en) | 1981-01-09 | 1981-01-09 | Photoconductive material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57115551A (en) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5986053A (en) * | 1982-11-09 | 1984-05-18 | Seiko Epson Corp | Photosensitive drum |
JPS6011849A (en) * | 1983-06-21 | 1985-01-22 | Sanyo Electric Co Ltd | Electrostatic latent image bearing material |
JPS6028660A (en) * | 1983-07-27 | 1985-02-13 | Canon Inc | Photoconductive member |
JPS6035746A (en) * | 1984-06-13 | 1985-02-23 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
US4555464A (en) * | 1983-07-06 | 1985-11-26 | Fuji Photo Film Co., Ltd. | Amorphous silicon electrophotographic photosensitive materials |
US4582769A (en) * | 1983-04-04 | 1986-04-15 | Fuji Photo Film Co., Ltd. | Electrophotographic element with amorphous Si(C) overlayer |
JPS61233751A (en) * | 1979-03-26 | 1986-10-18 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive layer |
JPS62103657A (en) * | 1985-10-30 | 1987-05-14 | Fujitsu Ltd | Electrophotographic sensitive body and its production |
JPS62231264A (en) * | 1986-03-31 | 1987-10-09 | Kyocera Corp | Electrophotographic sensitive body |
US4768072A (en) * | 1984-01-20 | 1988-08-30 | Fuji Electric Corporate Research And Development Co., Ltd. | Multilayer semiconductor device having an amorphous carbon and silicon layer |
US5112709A (en) * | 1988-07-01 | 1992-05-12 | Canon Kabushiki Kaisha | Red reproduction-improving electrophotographic image-forming method using an amorphous silicon photosensitive member having a surface layer composed of a hydrogenated amorphous silicon carbide |
JPH0572782A (en) * | 1988-03-08 | 1993-03-26 | Fujitsu Ltd | Photosensitive material for optical rear recording and image forming device |
JPH05257311A (en) * | 1992-08-28 | 1993-10-08 | Seiko Epson Corp | Photosensitive drum |
US5455138A (en) * | 1992-10-23 | 1995-10-03 | Canon Kabushiki Kaisha | Process for forming deposited film for light-receiving member, light-receiving member produced by the process, deposited film forming apparatus, and method for cleaning deposited film forming apparatus |
EP0785475A2 (en) | 1996-01-19 | 1997-07-23 | Canon Kabushiki Kaisha | Light receiving member having a surface protective layer with a specific outermost surface and process for the production thereof |
US6001521A (en) * | 1997-10-29 | 1999-12-14 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
US6238832B1 (en) | 1997-12-25 | 2001-05-29 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
US6586149B2 (en) | 2000-03-16 | 2003-07-01 | Canon Kabushiki Kaisha | Light-receiving member, image-forming apparatus, and image-forming method |
US7498110B2 (en) | 2004-03-16 | 2009-03-03 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
US7623810B2 (en) | 2005-10-28 | 2009-11-24 | Kyocera Corporation | Electrophotographic photosensitive member and image forming apparatus provided with the same |
US7684733B2 (en) | 2006-03-30 | 2010-03-23 | Kyocera Corporation | Electrophotographic photosensitive member rotatably supported in an image forming apparatus |
-
1981
- 1981-01-09 JP JP56002277A patent/JPS57115551A/en active Granted
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0334061B2 (en) * | 1979-03-26 | 1991-05-21 | Matsushita Electric Ind Co Ltd | |
JPS61233751A (en) * | 1979-03-26 | 1986-10-18 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive layer |
JPS5986053A (en) * | 1982-11-09 | 1984-05-18 | Seiko Epson Corp | Photosensitive drum |
US4582769A (en) * | 1983-04-04 | 1986-04-15 | Fuji Photo Film Co., Ltd. | Electrophotographic element with amorphous Si(C) overlayer |
JPS6011849A (en) * | 1983-06-21 | 1985-01-22 | Sanyo Electric Co Ltd | Electrostatic latent image bearing material |
JPH0456303B2 (en) * | 1983-06-21 | 1992-09-08 | Sanyo Electric Co | |
US4555464A (en) * | 1983-07-06 | 1985-11-26 | Fuji Photo Film Co., Ltd. | Amorphous silicon electrophotographic photosensitive materials |
JPS6028660A (en) * | 1983-07-27 | 1985-02-13 | Canon Inc | Photoconductive member |
US4768072A (en) * | 1984-01-20 | 1988-08-30 | Fuji Electric Corporate Research And Development Co., Ltd. | Multilayer semiconductor device having an amorphous carbon and silicon layer |
JPS6035746A (en) * | 1984-06-13 | 1985-02-23 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
JPH0427546B2 (en) * | 1985-10-30 | 1992-05-12 | Fujitsu Ltd | |
JPS62103657A (en) * | 1985-10-30 | 1987-05-14 | Fujitsu Ltd | Electrophotographic sensitive body and its production |
JPS62231264A (en) * | 1986-03-31 | 1987-10-09 | Kyocera Corp | Electrophotographic sensitive body |
JPH0572782A (en) * | 1988-03-08 | 1993-03-26 | Fujitsu Ltd | Photosensitive material for optical rear recording and image forming device |
US5112709A (en) * | 1988-07-01 | 1992-05-12 | Canon Kabushiki Kaisha | Red reproduction-improving electrophotographic image-forming method using an amorphous silicon photosensitive member having a surface layer composed of a hydrogenated amorphous silicon carbide |
JPH05257311A (en) * | 1992-08-28 | 1993-10-08 | Seiko Epson Corp | Photosensitive drum |
US5455138A (en) * | 1992-10-23 | 1995-10-03 | Canon Kabushiki Kaisha | Process for forming deposited film for light-receiving member, light-receiving member produced by the process, deposited film forming apparatus, and method for cleaning deposited film forming apparatus |
US5817181A (en) * | 1992-10-23 | 1998-10-06 | Canon Kabushiki Kaisha | Process for forming deposited film for light-receiving member, light-received member produced by the process deposited film forming apparatus, and method for cleaning deposited film forming apparatus |
EP0785475A2 (en) | 1996-01-19 | 1997-07-23 | Canon Kabushiki Kaisha | Light receiving member having a surface protective layer with a specific outermost surface and process for the production thereof |
US5849446A (en) * | 1996-01-19 | 1998-12-15 | Canon Kabushiki Kaisha | Light receiving member having a surface protective layer with a specific outermost surface and process for the production thereof |
US6001521A (en) * | 1997-10-29 | 1999-12-14 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
US6238832B1 (en) | 1997-12-25 | 2001-05-29 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
US6586149B2 (en) | 2000-03-16 | 2003-07-01 | Canon Kabushiki Kaisha | Light-receiving member, image-forming apparatus, and image-forming method |
US7060406B2 (en) | 2000-03-16 | 2006-06-13 | Canon Kabushiki Kaisha | Light-receiving member, image-forming apparatus, and image-forming method |
US7498110B2 (en) | 2004-03-16 | 2009-03-03 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
US7623810B2 (en) | 2005-10-28 | 2009-11-24 | Kyocera Corporation | Electrophotographic photosensitive member and image forming apparatus provided with the same |
US7684733B2 (en) | 2006-03-30 | 2010-03-23 | Kyocera Corporation | Electrophotographic photosensitive member rotatably supported in an image forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS6410069B2 (en) | 1989-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57115551A (en) | Photoconductive material | |
JPS57177156A (en) | Photoconductive material | |
JPS56146142A (en) | Electrophotographic sensitive film | |
JPS57148745A (en) | Lamination type electrophotographic receptor | |
JPS56135980A (en) | Photoelectric conversion element | |
JPS57115559A (en) | Photoconductive material | |
JPS5614241A (en) | Electrophotographic receptor | |
JPS5527778A (en) | Semiconductor color pickup device | |
JPS5638054A (en) | Composite electrophotographic receptor | |
JPS5660444A (en) | Electrophotographic receptor | |
JPS57198814A (en) | Optoelectrical encoder | |
JPS57115555A (en) | Photoconductive material | |
JPS57115558A (en) | Photoconductive material | |
JPS576852A (en) | Electrophotographic receptor | |
JPS5739570A (en) | Ccd image sensor | |
JPS5778544A (en) | Electrophotographic image forming member | |
JPS56164348A (en) | Electrophotographic receptor | |
JPS56165148A (en) | Electrophotographic receptor | |
JPS57116347A (en) | Photoconductive material | |
JPS5630373A (en) | Solid image pickup unit | |
JPS57132156A (en) | Electrophotographic receptor | |
JPS57177155A (en) | Electrophotographic image forming material | |
JPS57196258A (en) | Electrophotographic receptor | |
JPS57205747A (en) | Electrophotographic receptor | |
JPS57196247A (en) | Electrophotographic receptor |