JPS57115558A - Photoconductive material - Google Patents

Abstract

PURPOSE:To enhance photoconductivity characteristics, durability, etc., by forming a photoconductive layer with an amorphous silicon on a conductive substrate, providing a barrier layer containing boron as a main component and halogen on this photoconductive layer, and hindering carriers intruding into the photoconductive layers from the surface. CONSTITUTION:An amorphous silicon photoconductive layer 102 containing silicon as a main component, and >=1 kind H and halogen is formed on a conductive substrate 101. On this layer 102, a 3-1,000nm thick surface barrier layer 103 containing boron as a main component and 1-50atom% halogen is formed to obtain a photoconductive material 100. The layer 103 hinders injection of electrons into the layer 102, but it does not hinder positive hole injection due to irradiation of electromagnetic waves, thus permitting an image high in resolution and sharpness to be obtained with positively charged toner by negatively charging the material 100, and the material 100 to have always stabilized photoelectric characteristics against all the environmental conditions, such as high humidity. Forming a lower barrier layer between the substrate 101 and the layer 102 gives further superior performances.