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JPS5625743A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS5625743A
JPS5625743A JP10150479A JP10150479A JPS5625743A JP S5625743 A JPS5625743 A JP S5625743A JP 10150479 A JP10150479 A JP 10150479A JP 10150479 A JP10150479 A JP 10150479A JP S5625743 A JPS5625743 A JP S5625743A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
silicon
receptor
amorphous
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10150479A
Other versions
JPS6161383B2 (en )
Inventor
Shoichi Fukai
Shinichiro Ishihara
Koshiro Mori
Seiichi Nagata
Tsuneo Tanaka
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To obtain an electrophotographic receptor having sufficient sensitivity to the whole visible light region and low residual potential and not inducing environmental pollution, by using amorphous silicon as a photosensitive layer.
CONSTITUTION: An about 1μ thick photosensitive layer 2 of amorphous silicon is formed on conductive substrate 1 of aluminum or the like by glow discharge decomposition of silane gas, silicon sputtering, or the like on this layer, transition layer 3 of amorphous silicon carbide is formed, and further on this layer, few μ thick organic conductive material layer 4 of polyvinylcarbazole is formed to complete an electrophotographic receptor. This is enhanced in sensitivity by doping the side of said layer 2 in contact to substrate 1 with impurities to convert it into an N type semiconductor, and using a hole conductivity substance, such as polyvinylcarbazole as an organic conductive substance.
COPYRIGHT: (C)1981,JPO&Japio
JP10150479A 1979-08-08 1979-08-08 Expired JPS6161383B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10150479A JPS6161383B2 (en) 1979-08-08 1979-08-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10150479A JPS6161383B2 (en) 1979-08-08 1979-08-08

Publications (2)

Publication Number Publication Date
JPS5625743A true true JPS5625743A (en) 1981-03-12
JPS6161383B2 JPS6161383B2 (en) 1986-12-25

Family

ID=14302436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10150479A Expired JPS6161383B2 (en) 1979-08-08 1979-08-08

Country Status (1)

Country Link
JP (1) JPS6161383B2 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
US4452874A (en) * 1982-02-08 1984-06-05 Canon Kabushiki Kaisha Photoconductive member with multiple amorphous Si layers
JPS6022382A (en) * 1983-07-19 1985-02-04 Toshiba Corp Photoconductive member
US4522905A (en) * 1982-02-04 1985-06-11 Canon Kk Amorphous silicon photoconductive member with interface and rectifying layers
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
US4572881A (en) * 1980-06-25 1986-02-25 Shunpei Yamazaki Printing member for electrostatic photocopying
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5070364A (en) * 1980-06-25 1991-12-03 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5103262A (en) * 1980-06-25 1992-04-07 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
USRE35198E (en) * 1978-03-03 1996-04-02 Canon Kabushiki Kaisha Image forming member for electrophotography
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
WO2007149846A2 (en) * 2006-06-19 2007-12-27 Semisouth Laboratories, Inc. Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US8183124B2 (en) 2006-06-19 2012-05-22 Ss Sc Ip, Llc Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07158754A (en) * 1993-11-11 1995-06-20 Ckd Corp Composite valve

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35198E (en) * 1978-03-03 1996-04-02 Canon Kabushiki Kaisha Image forming member for electrophotography
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
US5103262A (en) * 1980-06-25 1992-04-07 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4572881A (en) * 1980-06-25 1986-02-25 Shunpei Yamazaki Printing member for electrostatic photocopying
US4598031A (en) * 1980-06-25 1986-07-01 Shunpei Yamazaki Printing member for electrostatic photocopying
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5070364A (en) * 1980-06-25 1991-12-03 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4522905A (en) * 1982-02-04 1985-06-11 Canon Kk Amorphous silicon photoconductive member with interface and rectifying layers
US4452874A (en) * 1982-02-08 1984-06-05 Canon Kabushiki Kaisha Photoconductive member with multiple amorphous Si layers
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
JPS6022382A (en) * 1983-07-19 1985-02-04 Toshiba Corp Photoconductive member
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
WO2007149846A2 (en) * 2006-06-19 2007-12-27 Semisouth Laboratories, Inc. Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
WO2007149846A3 (en) * 2006-06-19 2008-06-12 Semisouth Lab Inc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US8183124B2 (en) 2006-06-19 2012-05-22 Ss Sc Ip, Llc Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
US8193537B2 (en) 2006-06-19 2012-06-05 Ss Sc Ip, Llc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US8455328B2 (en) 2006-06-19 2013-06-04 Power Integrations, Inc. Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US8592826B2 (en) 2006-06-19 2013-11-26 Michael S. Mazzola Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
US8853710B2 (en) 2006-06-19 2014-10-07 Power Integrations, Inc. Optically controlled silicon carbide and related wide-bandgap transistors and thyristors

Also Published As

Publication number Publication date Type
JPS6161383B2 (en) 1986-12-25 grant
JP1393328C (en) grant

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