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JPS5625743A - Electrophotographic receptor - Google Patents

Electrophotographic receptor

Info

Publication number
JPS5625743A
JPS5625743A JP10150479A JP10150479A JPS5625743A JP S5625743 A JPS5625743 A JP S5625743A JP 10150479 A JP10150479 A JP 10150479A JP 10150479 A JP10150479 A JP 10150479A JP S5625743 A JPS5625743 A JP S5625743A
Authority
JP
Japan
Prior art keywords
layer
formed
amorphous silicon
electrophotographic receptor
polyvinylcarbazole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10150479A
Other versions
JPS6161383B2 (en
Inventor
Shoichi Fukai
Shinichiro Ishihara
Koshiro Mori
Seiichi Nagata
Tsuneo Tanaka
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP10150479A priority Critical patent/JPS6161383B2/ja
Publication of JPS5625743A publication Critical patent/JPS5625743A/en
Publication of JPS6161383B2 publication Critical patent/JPS6161383B2/ja
Application status is Expired legal-status Critical

Links

Abstract

PURPOSE: To obtain an electrophotographic receptor having sufficient sensitivity to the whole visible light region and low residual potential and not inducing environmental pollution, by using amorphous silicon as a photosensitive layer.
CONSTITUTION: An about 1μ thick photosensitive layer 2 of amorphous silicon is formed on conductive substrate 1 of aluminum or the like by glow discharge decomposition of silane gas, silicon sputtering, or the like on this layer, transition layer 3 of amorphous silicon carbide is formed, and further on this layer, few μ thick organic conductive material layer 4 of polyvinylcarbazole is formed to complete an electrophotographic receptor. This is enhanced in sensitivity by doping the side of said layer 2 in contact to substrate 1 with impurities to convert it into an N type semiconductor, and using a hole conductivity substance, such as polyvinylcarbazole as an organic conductive substance.
COPYRIGHT: (C)1981,JPO&Japio
JP10150479A 1979-08-08 1979-08-08 Expired JPS6161383B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10150479A JPS6161383B2 (en) 1979-08-08 1979-08-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10150479A JPS6161383B2 (en) 1979-08-08 1979-08-08

Publications (2)

Publication Number Publication Date
JPS5625743A true JPS5625743A (en) 1981-03-12
JPS6161383B2 JPS6161383B2 (en) 1986-12-25

Family

ID=14302436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10150479A Expired JPS6161383B2 (en) 1979-08-08 1979-08-08

Country Status (1)

Country Link
JP (1) JPS6161383B2 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
US4452874A (en) * 1982-02-08 1984-06-05 Canon Kabushiki Kaisha Photoconductive member with multiple amorphous Si layers
JPS6022382A (en) * 1983-07-19 1985-02-04 Toshiba Corp Photoconductive member
US4522905A (en) * 1982-02-04 1985-06-11 Canon Kk Amorphous silicon photoconductive member with interface and rectifying layers
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
US4572881A (en) * 1980-06-25 1986-02-25 Shunpei Yamazaki Printing member for electrostatic photocopying
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5070364A (en) * 1980-06-25 1991-12-03 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5103262A (en) * 1980-06-25 1992-04-07 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
USRE35198E (en) * 1978-03-03 1996-04-02 Canon Kabushiki Kaisha Image forming member for electrophotography
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
WO2007149846A2 (en) * 2006-06-19 2007-12-27 Semisouth Laboratories, Inc. Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US8183124B2 (en) 2006-06-19 2012-05-22 Ss Sc Ip, Llc Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07158754A (en) * 1993-11-11 1995-06-20 Ckd Corp Composite valve

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35198E (en) * 1978-03-03 1996-04-02 Canon Kabushiki Kaisha Image forming member for electrophotography
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying
US5103262A (en) * 1980-06-25 1992-04-07 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4572881A (en) * 1980-06-25 1986-02-25 Shunpei Yamazaki Printing member for electrostatic photocopying
US4598031A (en) * 1980-06-25 1986-07-01 Shunpei Yamazaki Printing member for electrostatic photocopying
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US4999270A (en) * 1980-06-25 1991-03-12 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5070364A (en) * 1980-06-25 1991-12-03 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4522905A (en) * 1982-02-04 1985-06-11 Canon Kk Amorphous silicon photoconductive member with interface and rectifying layers
US4452874A (en) * 1982-02-08 1984-06-05 Canon Kabushiki Kaisha Photoconductive member with multiple amorphous Si layers
US4452875A (en) * 1982-02-15 1984-06-05 Canon Kabushiki Kaisha Amorphous photoconductive member with α-Si interlayers
JPS6022382A (en) * 1983-07-19 1985-02-04 Toshiba Corp Photoconductive member
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
WO2007149846A2 (en) * 2006-06-19 2007-12-27 Semisouth Laboratories, Inc. Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
WO2007149846A3 (en) * 2006-06-19 2008-06-12 Semisouth Lab Inc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US8183124B2 (en) 2006-06-19 2012-05-22 Ss Sc Ip, Llc Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
US8193537B2 (en) 2006-06-19 2012-06-05 Ss Sc Ip, Llc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US8455328B2 (en) 2006-06-19 2013-06-04 Power Integrations, Inc. Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
US8592826B2 (en) 2006-06-19 2013-11-26 Michael S. Mazzola Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
US8853710B2 (en) 2006-06-19 2014-10-07 Power Integrations, Inc. Optically controlled silicon carbide and related wide-bandgap transistors and thyristors

Also Published As

Publication number Publication date
JPS6161383B2 (en) 1986-12-25

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