JPS57116347A - Photoconductive material - Google Patents

Photoconductive material

Info

Publication number
JPS57116347A
JPS57116347A JP56003592A JP359281A JPS57116347A JP S57116347 A JPS57116347 A JP S57116347A JP 56003592 A JP56003592 A JP 56003592A JP 359281 A JP359281 A JP 359281A JP S57116347 A JPS57116347 A JP S57116347A
Authority
JP
Japan
Prior art keywords
layer
photoconductive
substrate
interlayer
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56003592A
Other languages
Japanese (ja)
Other versions
JPS6346408B2 (en
Inventor
Shigeru Shirai
Junichiro Kanbe
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56003592A priority Critical patent/JPS57116347A/en
Priority to DE19823200376 priority patent/DE3200376A1/en
Publication of JPS57116347A publication Critical patent/JPS57116347A/en
Priority to US06/631,006 priority patent/US4525442A/en
Publication of JPS6346408B2 publication Critical patent/JPS6346408B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Abstract

PURPOSE:To obtain a photoconductive material always stabilized in electrical, optical, and photoconductive characteristics, by forming a photoconductive layer made of a specified amorphous boron on an interlayer made of a specified amorphous silicon formed on a substrate. CONSTITUTION:An interlayer 103 and a photoconductive layer 102 are laminated on a substrate 101 as a conductive material to make a photoconductive material 100. The layer 102 consists of an amorphous material containing silicon as a main component and H or/and halogen. The interlayer 103 is interposed between the substrate 101 and the layer 102, and has a function for preventing injection of carriers into the layer 102. It consists of an amorphous material containing boron as a main component and hydrogen. In addition, a surface barrier layer may be formed on the layer 102 in order to prevent injection of carriers from the surface into the layer 102.
JP56003592A 1981-01-09 1981-01-13 Photoconductive material Granted JPS57116347A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56003592A JPS57116347A (en) 1981-01-13 1981-01-13 Photoconductive material
DE19823200376 DE3200376A1 (en) 1981-01-09 1982-01-08 PHOTO-CONDUCTIVE ELEMENT
US06/631,006 US4525442A (en) 1981-01-09 1984-07-16 Photoconductive member containing an amorphous boron layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56003592A JPS57116347A (en) 1981-01-13 1981-01-13 Photoconductive material

Publications (2)

Publication Number Publication Date
JPS57116347A true JPS57116347A (en) 1982-07-20
JPS6346408B2 JPS6346408B2 (en) 1988-09-14

Family

ID=11561733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56003592A Granted JPS57116347A (en) 1981-01-09 1981-01-13 Photoconductive material

Country Status (1)

Country Link
JP (1) JPS57116347A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082663A (en) * 1983-10-08 1985-05-10 Fujitsu Ltd Method and apparatus for manufacturing mixture thin film
JPS63125942A (en) * 1986-11-17 1988-05-30 Fujitsu Ltd Amorphous silicon electrophotographic sensitive body

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0566005U (en) * 1992-02-14 1993-08-31 株式会社アンコールショップ Women's underwear

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082663A (en) * 1983-10-08 1985-05-10 Fujitsu Ltd Method and apparatus for manufacturing mixture thin film
JPH055895B2 (en) * 1983-10-08 1993-01-25 Fujitsu Ltd
JPS63125942A (en) * 1986-11-17 1988-05-30 Fujitsu Ltd Amorphous silicon electrophotographic sensitive body

Also Published As

Publication number Publication date
JPS6346408B2 (en) 1988-09-14

Similar Documents

Publication Publication Date Title
JPS57177156A (en) Photoconductive material
SE8207034L (en) PHOTOCELLSON AND WAY TO MAKE THE SAME
EP0100571A3 (en) Low resistance buried power bus for integrated circuits
JPS5752179A (en) Photoconductive member
JPS5752180A (en) Photoconductive member
JPS57116347A (en) Photoconductive material
JPS52104062A (en) Production of surface protection film of electronic parts
JPS5797634A (en) Hybrid integrated circuit
JPS57116346A (en) Photoconductive material
JPS5752178A (en) Photoconductive member
JPS56125881A (en) Optical semiconductor element
JPS57106084A (en) Amorphous silicon diode
JPS5762053A (en) Photoconductive member
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS57115555A (en) Photoconductive material
JPS5556660A (en) Manufacture of charge-coupled device
JPS5763546A (en) Photoconductive member
JPS5310273A (en) Mesa type semiconductor device
JPS55110056A (en) Semiconductor device
JPS533066A (en) Electrode formation method
JPS577963A (en) Charge transfer element
JPS5228279A (en) Process of semiconductor device
JPS5790970A (en) Electrostatic protective circuit for complementary-metal oxide semiconductor-integrated circuit
JPS5513935A (en) Glass for covering semiconductor
JPS5394876A (en) Manufacture of semiconductor device