JPS5752179A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS5752179A
JPS5752179A JP55127542A JP12754280A JPS5752179A JP S5752179 A JPS5752179 A JP S5752179A JP 55127542 A JP55127542 A JP 55127542A JP 12754280 A JP12754280 A JP 12754280A JP S5752179 A JPS5752179 A JP S5752179A
Authority
JP
Japan
Prior art keywords
layer
support
photoconductive member
intermediate layer
phtoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55127542A
Other languages
Japanese (ja)
Inventor
Isamu Shimizu
Shigeru Shirai
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP55127542A priority Critical patent/JPS5752179A/en
Priority to US06/299,576 priority patent/US4394425A/en
Priority to DE19813136141 priority patent/DE3136141A1/en
Priority to CA000385692A priority patent/CA1181630A/en
Priority to GB8127479A priority patent/GB2086133B/en
Priority to FR8117327A priority patent/FR2490359B1/en
Publication of JPS5752179A publication Critical patent/JPS5752179A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain a photoconductive member having high photosensitivity and fast photoresponsiveness with stable electric and optical properties by improving the intermediate layer between a photoconductive layer and a support. CONSTITUTION:A photoconductive member 100 is formed in a laminar structure made of an intermediate layer 102 and a phtoconductive layer 103 on a support 101 and has a surface 104. The support 101 may be conductive or electrically insulating, and the layer 103 is formed of amorphous material containing silicon atoms as base and hydrogen atoms. The intermediate layer 102 is formed of non-phtoconductive amorphous material containing silicon atoms and carbon atoms, thereby effectively preventing the flow of the carrier into the layer 103 from the support 101 side, and having a function for readily allowing the passage of the photocarrier produced in the layer 103 due to the emission of the electromagnetic wave from the layer 103 side to the support 101 side.
JP55127542A 1980-09-12 1980-09-12 Photoconductive member Pending JPS5752179A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP55127542A JPS5752179A (en) 1980-09-12 1980-09-12 Photoconductive member
US06/299,576 US4394425A (en) 1980-09-12 1981-09-04 Photoconductive member with α-Si(C) barrier layer
DE19813136141 DE3136141A1 (en) 1980-09-12 1981-09-11 PHOTO-CONDUCTIVE ELEMENT
CA000385692A CA1181630A (en) 1980-09-12 1981-09-11 Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing carbon
GB8127479A GB2086133B (en) 1980-09-12 1981-09-11 Photoconductive member
FR8117327A FR2490359B1 (en) 1980-09-12 1981-09-14 PHOTOCONDUCTIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55127542A JPS5752179A (en) 1980-09-12 1980-09-12 Photoconductive member

Publications (1)

Publication Number Publication Date
JPS5752179A true JPS5752179A (en) 1982-03-27

Family

ID=14962579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55127542A Pending JPS5752179A (en) 1980-09-12 1980-09-12 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS5752179A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5920238U (en) * 1982-07-28 1984-02-07 株式会社東芝 Amorphous silicon photoreceptor
JPS5920237U (en) * 1982-07-28 1984-02-07 株式会社東芝 Amorphous silicon photoreceptor
JPS5920236U (en) * 1982-07-28 1984-02-07 株式会社東芝 Amorphous silicon photoreceptor
JPS59226352A (en) * 1983-06-06 1984-12-19 Minolta Camera Co Ltd Photosensitive body
EP0160369A2 (en) 1984-03-12 1985-11-06 Canon Kabushiki Kaisha Light receiving member
EP0178915A2 (en) 1984-10-15 1986-04-23 Canon Kabushiki Kaisha Light-receiving member
EP0219353A2 (en) 1985-10-16 1987-04-22 Canon Kabushiki Kaisha Light receiving members
EP0220879A2 (en) 1985-10-17 1987-05-06 Canon Kabushiki Kaisha Light receiving members
EP0222568A2 (en) 1985-11-01 1987-05-20 Canon Kabushiki Kaisha Light receiving members
EP0223469A2 (en) 1985-11-02 1987-05-27 Canon Kabushiki Kaisha Light receiving members
DE102019001970A1 (en) 2018-03-27 2019-10-02 Fanuc Corporation INTEGRATED SIMULATION SYSTEM WITH IMPROVED OPERABILITY

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5920238U (en) * 1982-07-28 1984-02-07 株式会社東芝 Amorphous silicon photoreceptor
JPS5920237U (en) * 1982-07-28 1984-02-07 株式会社東芝 Amorphous silicon photoreceptor
JPS5920236U (en) * 1982-07-28 1984-02-07 株式会社東芝 Amorphous silicon photoreceptor
JPS59226352A (en) * 1983-06-06 1984-12-19 Minolta Camera Co Ltd Photosensitive body
JPH0582573B2 (en) * 1983-06-06 1993-11-19 Minolta Camera Kk
EP0160369A2 (en) 1984-03-12 1985-11-06 Canon Kabushiki Kaisha Light receiving member
EP0178915A2 (en) 1984-10-15 1986-04-23 Canon Kabushiki Kaisha Light-receiving member
EP0219353A2 (en) 1985-10-16 1987-04-22 Canon Kabushiki Kaisha Light receiving members
EP0220879A2 (en) 1985-10-17 1987-05-06 Canon Kabushiki Kaisha Light receiving members
EP0222568A2 (en) 1985-11-01 1987-05-20 Canon Kabushiki Kaisha Light receiving members
EP0223469A2 (en) 1985-11-02 1987-05-27 Canon Kabushiki Kaisha Light receiving members
DE102019001970A1 (en) 2018-03-27 2019-10-02 Fanuc Corporation INTEGRATED SIMULATION SYSTEM WITH IMPROVED OPERABILITY

Similar Documents

Publication Publication Date Title
JPS5713777A (en) Semiconductor device and manufacture thereof
EP0223444A3 (en) Electrical heating pad with antistatic surface
JPS5752179A (en) Photoconductive member
JPS5752180A (en) Photoconductive member
JPS56152276A (en) Solar cell made of amorphous silicon thin film
JPS5752178A (en) Photoconductive member
JPS57119357A (en) Photoconductive member
JPS57119356A (en) Photoconductive member
JPS57119359A (en) Photoconductive member
JPS5763545A (en) Photoconductive member
JPS5763546A (en) Photoconductive member
JPS57116346A (en) Photoconductive material
JPS57116347A (en) Photoconductive material
JPS57106084A (en) Amorphous silicon diode
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS56125881A (en) Optical semiconductor element
JPS56142680A (en) Photoconductive semiconductor device
JPS55125635A (en) Semiconductor device
JPS5661175A (en) Thin-film solar cell
JPS5681982A (en) Power phototransistor
JPS5762053A (en) Photoconductive member
JPS644083A (en) Photovoltaic device
JPS53126875A (en) Gate protecting device
JPS57115555A (en) Photoconductive material
JPS5763547A (en) Photoconductive member