JPS57119357A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS57119357A
JPS57119357A JP56005525A JP552581A JPS57119357A JP S57119357 A JPS57119357 A JP S57119357A JP 56005525 A JP56005525 A JP 56005525A JP 552581 A JP552581 A JP 552581A JP S57119357 A JPS57119357 A JP S57119357A
Authority
JP
Japan
Prior art keywords
layer
photoconductive
halogen
amorphous
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56005525A
Other languages
Japanese (ja)
Other versions
JPS6348054B2 (en
Inventor
Shigeru Shirai
Junichiro Kanbe
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP56005525A priority Critical patent/JPS57119357A/en
Application filed by Canon Inc filed Critical Canon Inc
Priority to US06/335,464 priority patent/US4539283A/en
Priority to GB8200778A priority patent/GB2094550B/en
Priority to DE19823201146 priority patent/DE3201146A1/en
Publication of JPS57119357A publication Critical patent/JPS57119357A/en
Priority to US06/705,515 priority patent/US4609601A/en
Publication of JPS6348054B2 publication Critical patent/JPS6348054B2/ja
Priority to US07/735,758 priority patent/US5141836A/en
Priority to US07/900,947 priority patent/US5258250A/en
Priority to US08/469,690 priority patent/US5582947A/en
Priority to US08/480,323 priority patent/US5582945A/en
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To make a photoconductive member suitable for all environments and to enhance the endurance, photosenitivity, etc. of the member by dispersing a specified amount of C in the photoconductive amorphous Si layer contg. H or halogen while making the C content higher at the surface of the electrically conductive support side and the surface of the Si layer, smaller at the intermediate part, and uniform in a direction parallel to the surface. CONSTITUTION:On an electrically conductive support 101 a nonphotoconductive amorphous Si layer 102 is formed as a barrier layer 102 by adding one or more among H, halogen, N and O to Si. On the layer 102 a photoconductive amorphous Si layer 103 contg. 0.005-30 atomic% C as a whole together with H and halogen is formed to obtain a photoconductive member 100. C is contained by 0.03-90 atomic% at the surface of the support 101 side or the surface of the opposite side, the C content of the intermediate part is lower, and C is distributed ununiformly in the thickness direction and uniformly in a direction parallel to the surface of the layer 103. The resulting member 100 has stable photoconductive characteristics at all times, and it has also superior resolution and cleaness.
JP56005525A 1981-01-16 1981-01-16 Photoconductive member Granted JPS57119357A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP56005525A JPS57119357A (en) 1981-01-16 1981-01-16 Photoconductive member
US06/335,464 US4539283A (en) 1981-01-16 1981-12-29 Amorphous silicon photoconductive member
GB8200778A GB2094550B (en) 1981-01-16 1982-01-12 Amorphous semiconductor member
DE19823201146 DE3201146A1 (en) 1981-01-16 1982-01-15 PHOTO-CONDUCTIVE ELEMENT
US06/705,515 US4609601A (en) 1981-01-16 1985-02-26 Process of imaging an amorphous Si(C) photoconductive member
US07/735,758 US5141836A (en) 1981-01-16 1991-07-29 Method of forming a photoconductive member with silicon, hydrogen and/or halogen and carbon
US07/900,947 US5258250A (en) 1981-01-16 1992-06-17 Photoconductive member
US08/469,690 US5582947A (en) 1981-01-16 1995-06-06 Glow discharge process for making photoconductive member
US08/480,323 US5582945A (en) 1981-01-16 1995-06-07 Photoconductive member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005525A JPS57119357A (en) 1981-01-16 1981-01-16 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS57119357A true JPS57119357A (en) 1982-07-24
JPS6348054B2 JPS6348054B2 (en) 1988-09-27

Family

ID=11613597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005525A Granted JPS57119357A (en) 1981-01-16 1981-01-16 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS57119357A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823029A (en) * 1981-08-04 1983-02-10 Seiko Epson Corp Electrophotographic receptor
JPS6026345A (en) * 1983-07-21 1985-02-09 Seiko Epson Corp Electrophotographic sensitive body
JPS6041046A (en) * 1983-08-16 1985-03-04 Kanegafuchi Chem Ind Co Ltd Electrophotographic sensitive body
JPS6067901A (en) * 1983-09-24 1985-04-18 Agency Of Ind Science & Technol Optical element using thin film of hydrogenated and fluorinated amorphous silicon carbide
JPS6073628A (en) * 1983-09-30 1985-04-25 Toshiba Corp Photoconductive member
JPS62273559A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273549A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273553A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273568A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS6381438A (en) * 1986-09-26 1988-04-12 Kyocera Corp Electrophotographic sensitive body
JPS6381442A (en) * 1986-09-26 1988-04-12 Kyocera Corp Electrophotographic sensitive body
JPS63108346A (en) * 1986-10-24 1988-05-13 Kyocera Corp Electrophotographic sensitive body
JPS63108345A (en) * 1986-10-24 1988-05-13 Kyocera Corp Electrophotographic sensitive body
JPS63108344A (en) * 1986-10-24 1988-05-13 Kyocera Corp Electrophotographic sensitive body
EP0501498A1 (en) 1991-02-28 1992-09-02 Canon Kabushiki Kaisha Method for treating substrate for electrophotographic photosensitive member and method for manufacturing electrophotographic photosensitive member making use of said method for treating substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594563U (en) * 1992-05-19 1993-12-24 三菱自動車工業株式会社 Differential carrier structure

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823029A (en) * 1981-08-04 1983-02-10 Seiko Epson Corp Electrophotographic receptor
JPS6026345A (en) * 1983-07-21 1985-02-09 Seiko Epson Corp Electrophotographic sensitive body
JPH0462379B2 (en) * 1983-07-21 1992-10-06 Seiko Epson Corp
JPH0426106B2 (en) * 1983-08-16 1992-05-06 Kanegafuchi Chemical Ind
JPS6041046A (en) * 1983-08-16 1985-03-04 Kanegafuchi Chem Ind Co Ltd Electrophotographic sensitive body
JPS6067901A (en) * 1983-09-24 1985-04-18 Agency Of Ind Science & Technol Optical element using thin film of hydrogenated and fluorinated amorphous silicon carbide
JPH0477281B2 (en) * 1983-09-24 1992-12-08 Kogyo Gijutsuin
JPH0535425B2 (en) * 1983-09-30 1993-05-26 Tokyo Shibaura Electric Co
JPS6073628A (en) * 1983-09-30 1985-04-25 Toshiba Corp Photoconductive member
JPS62273568A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273553A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273549A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS62273559A (en) * 1986-05-22 1987-11-27 Fuji Xerox Co Ltd Electrophotographic sensitive body
JPS6381442A (en) * 1986-09-26 1988-04-12 Kyocera Corp Electrophotographic sensitive body
JPS6381438A (en) * 1986-09-26 1988-04-12 Kyocera Corp Electrophotographic sensitive body
JPS63108344A (en) * 1986-10-24 1988-05-13 Kyocera Corp Electrophotographic sensitive body
JPS63108345A (en) * 1986-10-24 1988-05-13 Kyocera Corp Electrophotographic sensitive body
JPS63108346A (en) * 1986-10-24 1988-05-13 Kyocera Corp Electrophotographic sensitive body
EP0501498A1 (en) 1991-02-28 1992-09-02 Canon Kabushiki Kaisha Method for treating substrate for electrophotographic photosensitive member and method for manufacturing electrophotographic photosensitive member making use of said method for treating substrate
US5314780A (en) * 1991-02-28 1994-05-24 Canon Kabushiki Kaisha Method for treating metal substrate for electro-photographic photosensitive member and method for manufacturing electrophotographic photosensitive member
US5480627A (en) * 1991-02-28 1996-01-02 Canon Kabushiki Kaisha Method for treating substrate for electrophotographic photosensitive member and method for making electrophotographic photosensitive member

Also Published As

Publication number Publication date
JPS6348054B2 (en) 1988-09-27

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