JPS5752178A - Photoconductive member - Google Patents
Photoconductive memberInfo
- Publication number
- JPS5752178A JPS5752178A JP55127490A JP12749080A JPS5752178A JP S5752178 A JPS5752178 A JP S5752178A JP 55127490 A JP55127490 A JP 55127490A JP 12749080 A JP12749080 A JP 12749080A JP S5752178 A JPS5752178 A JP S5752178A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- support
- photoconductive
- atoms
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Abstract
PURPOSE:To obtain a photoconductive member having high photosensitivity and fast photoresponsiveness with stable electric and optical properties by improving the intermediate layer between a ohotoconductive layer and a support. CONSTITUTION:A photoconductive member 100 is formed in a laminar structure made of an intermediate layer 102 and a photoconductive layer 103 on a support 101 and has a surface 104. The support 101 may be conductive or electrically insulating, and the layer 103 is formed of amorphous mateial containing silicon atoms as base and hydrogen atoms. The intermediate layer 102 is formed of non-photoconductive amorphous material containing silicon atoms and carbon atoms as base and halogen atoms, thereby effectively preventing the flow of the carrier into the layer 103 from the support 101 and having a function for readily allowing the passage of the photocarrier produced in the layer 103 due to the emission of the elecromagnetic wave from the layer 103 side to the support 101 side.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55127490A JPS5752178A (en) | 1980-09-13 | 1980-09-13 | Photoconductive member |
US06/299,576 US4394425A (en) | 1980-09-12 | 1981-09-04 | Photoconductive member with α-Si(C) barrier layer |
CA000385692A CA1181630A (en) | 1980-09-12 | 1981-09-11 | Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing carbon |
DE19813136141 DE3136141A1 (en) | 1980-09-12 | 1981-09-11 | PHOTO-CONDUCTIVE ELEMENT |
GB8127479A GB2086133B (en) | 1980-09-12 | 1981-09-11 | Photoconductive member |
FR8117327A FR2490359B1 (en) | 1980-09-12 | 1981-09-14 | PHOTOCONDUCTIVE ELEMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55127490A JPS5752178A (en) | 1980-09-13 | 1980-09-13 | Photoconductive member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5752178A true JPS5752178A (en) | 1982-03-27 |
JPH0150905B2 JPH0150905B2 (en) | 1989-11-01 |
Family
ID=14961237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55127490A Granted JPS5752178A (en) | 1980-09-12 | 1980-09-13 | Photoconductive member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5752178A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60144751A (en) * | 1984-01-05 | 1985-07-31 | Hitachi Ltd | Electrophotographic sensitive body |
EP0160369A2 (en) | 1984-03-12 | 1985-11-06 | Canon Kabushiki Kaisha | Light receiving member |
EP0178915A2 (en) | 1984-10-15 | 1986-04-23 | Canon Kabushiki Kaisha | Light-receiving member |
JPS6240715U (en) * | 1985-08-29 | 1987-03-11 | ||
EP0219353A2 (en) | 1985-10-16 | 1987-04-22 | Canon Kabushiki Kaisha | Light receiving members |
EP0220879A2 (en) | 1985-10-17 | 1987-05-06 | Canon Kabushiki Kaisha | Light receiving members |
EP0222568A2 (en) | 1985-11-01 | 1987-05-20 | Canon Kabushiki Kaisha | Light receiving members |
EP0223469A2 (en) | 1985-11-02 | 1987-05-27 | Canon Kabushiki Kaisha | Light receiving members |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5342693A (en) * | 1976-09-29 | 1978-04-18 | Rca Corp | Semiconductor device including amorphous silicone layer |
JPS54145540A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
JPS564150A (en) * | 1979-06-22 | 1981-01-17 | Minolta Camera Co Ltd | Electrophotographic receptor |
JPS56125881A (en) * | 1980-03-06 | 1981-10-02 | Fuji Photo Film Co Ltd | Optical semiconductor element |
-
1980
- 1980-09-13 JP JP55127490A patent/JPS5752178A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5342693A (en) * | 1976-09-29 | 1978-04-18 | Rca Corp | Semiconductor device including amorphous silicone layer |
JPS54145540A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
JPS564150A (en) * | 1979-06-22 | 1981-01-17 | Minolta Camera Co Ltd | Electrophotographic receptor |
JPS56125881A (en) * | 1980-03-06 | 1981-10-02 | Fuji Photo Film Co Ltd | Optical semiconductor element |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60144751A (en) * | 1984-01-05 | 1985-07-31 | Hitachi Ltd | Electrophotographic sensitive body |
EP0160369A2 (en) | 1984-03-12 | 1985-11-06 | Canon Kabushiki Kaisha | Light receiving member |
EP0178915A2 (en) | 1984-10-15 | 1986-04-23 | Canon Kabushiki Kaisha | Light-receiving member |
JPS6240715U (en) * | 1985-08-29 | 1987-03-11 | ||
JPH0355205Y2 (en) * | 1985-08-29 | 1991-12-09 | ||
EP0219353A2 (en) | 1985-10-16 | 1987-04-22 | Canon Kabushiki Kaisha | Light receiving members |
EP0220879A2 (en) | 1985-10-17 | 1987-05-06 | Canon Kabushiki Kaisha | Light receiving members |
EP0222568A2 (en) | 1985-11-01 | 1987-05-20 | Canon Kabushiki Kaisha | Light receiving members |
EP0223469A2 (en) | 1985-11-02 | 1987-05-27 | Canon Kabushiki Kaisha | Light receiving members |
Also Published As
Publication number | Publication date |
---|---|
JPH0150905B2 (en) | 1989-11-01 |
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