JPS5763547A - Photoconductive member - Google Patents
Photoconductive memberInfo
- Publication number
- JPS5763547A JPS5763547A JP55138982A JP13898280A JPS5763547A JP S5763547 A JPS5763547 A JP S5763547A JP 55138982 A JP55138982 A JP 55138982A JP 13898280 A JP13898280 A JP 13898280A JP S5763547 A JPS5763547 A JP S5763547A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- photoconductive
- halogen atoms
- photoconductive member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 6
- 125000005843 halogen group Chemical group 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To obtain a photoconductive member which is superior in electrical, optical and photoconductive characteristics and environment characteristics to be used by providing a nonphotoconductive amorphous material layer consisting basically of Si and O and contg. halogen atoms between a substrate and a photoconductive layer. CONSTITUTION:A photoconductive member 100 is constituted of an intermediate layer 102 and a photoconductive layer 103 provided in the state of direct contact with said layer 102 on a substrate 101 for the photoconductive member. The substrate 101 may be either conductive or of electrically insulation characteristic. The layer 102 consists of the nonphotoconductive amorphous material expressed by the formula (X is halogen atoms; 0<x<1, 0<y<1) consisting basically of Si and O and contg. halogen atoms. Said layer 102 has the functions of blocking the inflow of carriers from the side of the substrate 101 into the layer 103 effectively and permits the passage of the photocarriers produced in the layer 103 by the irradiation of electromagnetic waves and moving toward the side of the substrate 101 from the side of the layer 103 to the side of the substrate 101 easily.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55138982A JPS5763547A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
| GB8129627A GB2088628B (en) | 1980-10-03 | 1981-10-01 | Photoconductive member |
| CA000387231A CA1181629A (en) | 1980-10-03 | 1981-10-02 | Photoconductive member including non-photoconductive layer containing amorphous silicon matrix-containing oxygen |
| DE19813139531 DE3139531A1 (en) | 1980-10-03 | 1981-10-05 | PHOTO-CONDUCTIVE ELEMENT |
| FR8118696A FR2495344B1 (en) | 1980-10-03 | 1981-10-05 | PHOTOCONDUCTIVE ELEMENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55138982A JPS5763547A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5763547A true JPS5763547A (en) | 1982-04-17 |
| JPS6341056B2 JPS6341056B2 (en) | 1988-08-15 |
Family
ID=15234705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55138982A Granted JPS5763547A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5763547A (en) |
-
1980
- 1980-10-03 JP JP55138982A patent/JPS5763547A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6341056B2 (en) | 1988-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3380828D1 (en) | Optical article having a conductive anti-reflection coating | |
| JPS57105744A (en) | Photoconductive member | |
| JPS57119356A (en) | Photoconductive member | |
| JPS5752179A (en) | Photoconductive member | |
| JPS5763545A (en) | Photoconductive member | |
| JPS5752180A (en) | Photoconductive member | |
| JPS57105745A (en) | Photoconductive member | |
| JPS5763546A (en) | Photoconductive member | |
| JPS5752178A (en) | Photoconductive member | |
| JPS5764239A (en) | Photosensitive body for electrophotography | |
| JPS5763547A (en) | Photoconductive member | |
| JPS56125881A (en) | Optical semiconductor element | |
| JPS53126875A (en) | Gate protecting device | |
| JPS5762053A (en) | Photoconductive member | |
| JPS5745980A (en) | Amorphous solar battery and manufacture thereof | |
| JPS5430785A (en) | Manufacture of semiconductor device | |
| JPS57115555A (en) | Photoconductive material | |
| JPS644083A (en) | Photovoltaic device | |
| JPS538139A (en) | Electrophotographic light sensitive element | |
| JPS5394775A (en) | Manufacture of semiconductor device | |
| JPS5661175A (en) | Thin-film solar cell | |
| JPS5764245A (en) | Photoconductive member | |
| JPS577976A (en) | Photo electromotive force element | |
| JPS5525041A (en) | Forming transparent conductive layer on substrate | |
| JPS5567709A (en) | Conductive focusing type optical guide |