JPS5430785A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5430785A
JPS5430785A JP9663877A JP9663877A JPS5430785A JP S5430785 A JPS5430785 A JP S5430785A JP 9663877 A JP9663877 A JP 9663877A JP 9663877 A JP9663877 A JP 9663877A JP S5430785 A JPS5430785 A JP S5430785A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
onto
conductive poly
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9663877A
Other languages
Japanese (ja)
Inventor
Akira Takei
Yoshihiko Higa
Takashi Mitsuida
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9663877A priority Critical patent/JPS5430785A/en
Publication of JPS5430785A publication Critical patent/JPS5430785A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To improve dielectric strength between layers by providing the 1st conductive poly Si onto an insulation film of a substrate surface and by stacking the 2nd conductive poly Si onto the surface oxidization film.
JP9663877A 1977-08-12 1977-08-12 Manufacture of semiconductor device Pending JPS5430785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9663877A JPS5430785A (en) 1977-08-12 1977-08-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9663877A JPS5430785A (en) 1977-08-12 1977-08-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5430785A true JPS5430785A (en) 1979-03-07

Family

ID=14170362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9663877A Pending JPS5430785A (en) 1977-08-12 1977-08-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5430785A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561546A (en) * 1979-06-15 1981-01-09 Mitsubishi Electric Corp Manufacture of integrated circuit device
JPS5952879A (en) * 1982-09-20 1984-03-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPS5965452A (en) * 1982-10-05 1984-04-13 Matsushita Electronics Corp Manufacture of semiconductor device
JPS60198855A (en) * 1984-03-23 1985-10-08 Nec Corp Manufacture of semiconductor integrated circuit device
JPS62188265A (en) * 1987-02-06 1987-08-17 Hitachi Ltd Semiconductor memory and manufacture thereof
US4914497A (en) * 1983-07-12 1990-04-03 Nec Corporation Semiconductor integrated circuit device provided with a capacitor element having an oxidation-resist film as a dielectric and process for manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS561546A (en) * 1979-06-15 1981-01-09 Mitsubishi Electric Corp Manufacture of integrated circuit device
JPS5952879A (en) * 1982-09-20 1984-03-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0454390B2 (en) * 1982-09-20 1992-08-31 Matsushita Electronics Corp
JPS5965452A (en) * 1982-10-05 1984-04-13 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0220147B2 (en) * 1982-10-05 1990-05-08 Matsushita Electronics Corp
US4914497A (en) * 1983-07-12 1990-04-03 Nec Corporation Semiconductor integrated circuit device provided with a capacitor element having an oxidation-resist film as a dielectric and process for manufacturing the same
JPS60198855A (en) * 1984-03-23 1985-10-08 Nec Corp Manufacture of semiconductor integrated circuit device
JPS62188265A (en) * 1987-02-06 1987-08-17 Hitachi Ltd Semiconductor memory and manufacture thereof

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