JPS56167370A - Amorphous solar cell - Google Patents

Amorphous solar cell

Info

Publication number
JPS56167370A
JPS56167370A JP7057580A JP7057580A JPS56167370A JP S56167370 A JPS56167370 A JP S56167370A JP 7057580 A JP7057580 A JP 7057580A JP 7057580 A JP7057580 A JP 7057580A JP S56167370 A JPS56167370 A JP S56167370A
Authority
JP
Japan
Prior art keywords
inner stress
amorphous layer
layer
addition
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7057580A
Other languages
Japanese (ja)
Inventor
Genshiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7057580A priority Critical patent/JPS56167370A/en
Publication of JPS56167370A publication Critical patent/JPS56167370A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent the separation of an amorphous layer and an electrode by depositing the amorphous layer wherein addition is not made and whose inner stress is smaller than that of another amorphous layer wherein addition is not made. CONSTITUTION:On a stainless plate 1, is formed the amorphous layer 3, wherein addition is not made, and which is grown under the condition the inner stress becomes small, and also is formed the amorphous layer 4, wherein the addition is not made, and which forms a junction with the layer 3 and a main active region. The layer 4 is formed by selecting the growing condition in a glow discharge method so that the inner stress is larger than that of the layer 3, the local level density is lower, and the mobility is higher. Then, P type amorphous layer Si 5, and a transparent electrode 6 which also serves as a reflection preventing film. In this constitution, the filn, wherein the inner stress is large, the space charge density is small, and the hole mobility is large, is used in the main generating region 4 of light current, and the film 3, wherein the film thickness is poor but the inner stress is large, is used for the interface of the substrate. Thus the inner stress as a whole is reduced and the separation of the electrode can be prevented.
JP7057580A 1980-05-26 1980-05-26 Amorphous solar cell Pending JPS56167370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7057580A JPS56167370A (en) 1980-05-26 1980-05-26 Amorphous solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7057580A JPS56167370A (en) 1980-05-26 1980-05-26 Amorphous solar cell

Publications (1)

Publication Number Publication Date
JPS56167370A true JPS56167370A (en) 1981-12-23

Family

ID=13435482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7057580A Pending JPS56167370A (en) 1980-05-26 1980-05-26 Amorphous solar cell

Country Status (1)

Country Link
JP (1) JPS56167370A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6129170A (en) * 1984-07-19 1986-02-10 Canon Inc Photosensor and manufacture thereof
JPS6139572A (en) * 1984-07-31 1986-02-25 Canon Inc Image reading device
JPS6139570A (en) * 1984-07-31 1986-02-25 Canon Inc Continuous-length image sensor unit
JPS6139571A (en) * 1984-07-31 1986-02-25 Canon Inc Image reading device
JPS6140055A (en) * 1984-08-01 1986-02-26 Canon Inc Color photo sensor
JPS6185859A (en) * 1984-10-04 1986-05-01 Canon Inc Photosensor and manufacture thereof
JPS6187365A (en) * 1984-10-05 1986-05-02 Canon Inc Reader for picture
JPS6188559A (en) * 1984-10-08 1986-05-06 Canon Inc Image reader
JPS6189659A (en) * 1984-10-09 1986-05-07 Canon Inc Color photosensor
JPS6190458A (en) * 1984-10-11 1986-05-08 Canon Inc Continuous image sensor unit
JPS62101083A (en) * 1985-10-28 1987-05-11 Kanegafuchi Chem Ind Co Ltd Manufacture of semiconductor device
JPS62190778A (en) * 1986-02-18 1987-08-20 Tech Res Assoc Conduct Inorg Compo Photoelectric conversion device
JPH0195770U (en) * 1987-12-17 1989-06-26

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6129170A (en) * 1984-07-19 1986-02-10 Canon Inc Photosensor and manufacture thereof
JPS6139572A (en) * 1984-07-31 1986-02-25 Canon Inc Image reading device
JPS6139570A (en) * 1984-07-31 1986-02-25 Canon Inc Continuous-length image sensor unit
JPS6139571A (en) * 1984-07-31 1986-02-25 Canon Inc Image reading device
JPS6140055A (en) * 1984-08-01 1986-02-26 Canon Inc Color photo sensor
JPS6185859A (en) * 1984-10-04 1986-05-01 Canon Inc Photosensor and manufacture thereof
JPH0462467B2 (en) * 1984-10-04 1992-10-06 Canon Kk
JPS6187365A (en) * 1984-10-05 1986-05-02 Canon Inc Reader for picture
JPH0462468B2 (en) * 1984-10-05 1992-10-06 Canon Kk
JPH0462469B2 (en) * 1984-10-08 1992-10-06 Canon Kk
JPS6188559A (en) * 1984-10-08 1986-05-06 Canon Inc Image reader
JPS6189659A (en) * 1984-10-09 1986-05-07 Canon Inc Color photosensor
JPH0462470B2 (en) * 1984-10-09 1992-10-06 Canon Kk
JPH0462471B2 (en) * 1984-10-11 1992-10-06 Canon Kk
JPS6190458A (en) * 1984-10-11 1986-05-08 Canon Inc Continuous image sensor unit
JPS62101083A (en) * 1985-10-28 1987-05-11 Kanegafuchi Chem Ind Co Ltd Manufacture of semiconductor device
JPH0562830B2 (en) * 1985-10-28 1993-09-09 Kanegafuchi Chemical Ind
JPS62190778A (en) * 1986-02-18 1987-08-20 Tech Res Assoc Conduct Inorg Compo Photoelectric conversion device
JPH0195770U (en) * 1987-12-17 1989-06-26

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