JPS6140055A - Color photo sensor - Google Patents

Abstract

PURPOSE:To keep good performance for a long period, by constituting a photoconductive layer with two or more laminated films each having a different refractive index, and by selecting a refractive index of the lowest layer of the laminated films below a specified value. CONSTITUTION:A photoconductive layer is comprised of a substrate 1, a lower amorphous Si layer 2 and an amorphous Si layer 3. The photoconductive layer is made of amorphous material containing a principal ingredient of amorphous Si. The layer 2 has a refractive index of 3.2 or less in a wavelength of 6,328Angstrom and the layer 3 has a refractive index above 3.2. Magnitude of stress of the photoconductive layer can be adjusted by setting appropriately conditions at the time when the layer is formed. Moreover, by forming the layer 2 having a small stress, it can be kept at a close contact with the substrate 1. Therefore, it is preferable that the layer 2 with a comparatively small refractive index, for example 3.2 or less, may be first formed on the substrate, by glow-discharge with a comparatively large discharge power, and that the layer 3 with a comparatively large refractive index may be then formed, by glow-discharge with a comparatively small discharge power.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photosensor, and particularly to a color photosensor for color reading.

[Prior art]

2. Description of the Related Art Conventionally, it is generally well known that a photosensor is used as a photoelectric conversion element in a photoelectric conversion device used as an optical input section of an image information processing device such as a facsimile, a digital copying machine, or a character reading device. In particular, in recent years, photo sensors are arranged one-dimensionally to form a long line sensor, and this is used to configure a highly sensitive image processing device. This is also being done. An example of a photosensor constituting such a long line sensor is one in which a gap serving as a light receiving part is formed on a photoconductive layer containing amorphous silicon (hereinafter referred to as A-81) as a photoconductive material. A pair of electrodes are provided which are arranged opposite to each other. Examples include planar photoconductive photosensers.

In order to realize a color photo sensor for color reading by using such 7-photo sensors together as a sensor unit,
A color filter is provided in the light receiving section. i.e., for example red (6), green) and blue (B
) are attached to the light receiving parts of three sensor units located adjacent to each other, and R output signals, G output signals, and B output signals are obtained from these three sensor units,
This is an output signal of one pixel composed of the light receiving sections of the three sensor units.

Conventionally, so-called dyed filters in which dyes are mixed with hydrophilic resins such as gelatin and Popal have been widely used as color filters. However, there are various problems when such a color filter is applied to a 7-point sensor.

In other words, Color 7 Otosen? To form a color filter during manufacturing, the sensor unit is first coated with the above resin, and then the desired position is dyed with the desired dye, but since this dyeing process is a wet process,
This will adversely affect the characteristics of the sensor unit (a-8l) that has already been formed.

In addition, the surface of the senna unit to which the color filter should be applied is not flat because electrodes and other parts are formed on it.
The surface has irregularities, and it is extremely difficult to form a fine dyeing pattern with high precision on such an uneven surface. Furthermore, dyed filters do not have sufficient light resistance and heat resistance, and if dyed filters are used in photosensors that are constantly exposed to strong light irradiation during use, the performance of the color photosensor tends to deteriorate.

In recent years, a method has been proposed in which a thin film of a pigment such as a dye or pigment is formed by vapor deposition (Japanese Unexamined Patent Publication No. 55-146406).A color filter of a color photosensor is formed by this type of method, and the color filter of the dye filter is It is possible to solve the disadvantages of this case.

By the way, the above? Plasma C
The VD method, the reactive sputtering method, the ionizing method, etc. are used, and in all of them, the reaction is promoted by glow discharge. However, in any case, in order to obtain a high quality A-81 film with high photoconductivity, it is necessary to form the film at a relatively low discharge power. However, with such a low discharge power, the adhesion of the photoconductive layer obtained by film formation to a substrate made of glass, ceramic, etc. is insufficient, and the subsequent frit lithography process during electrode formation is difficult. There was a problem that the film was easily peeled off during the process. □ ′ Conventionally, in order to prevent film peeling, the base □
A method is adopted in which a-8t is deposited after roughening the plate surface. That is, the surface of the substrate is chemically etched with, for example, hydrofluoric acid, or physically rubbed with, for example, a brush. However, such a method has the following drawbacks.

(1) When using chemicals such as hydrofluoric acid, the equipment in the cleaning line becomes complicated and expensive.

(2) It is difficult to control the degree of unevenness on the substrate surface.

(3) Microscopic defects are likely to occur when the substrate surface is roughened;
Since the characteristics of the a-8t film deposited on the microscopic defects are different, variations in characteristics are likely to occur.

Therefore, if a color photosensor is fabricated using a sensor unit having the A-8L layer as described above, there will be large variations in characteristics between the sensor units. There was a problem in that it was necessary to add a correction circuit.

[Purpose of the invention]

SUMMARY OF THE INVENTION In view of the above-mentioned prior art, it is an object of the present invention to provide a low-cost color photosensor that can maintain good performance over a long period of time and has little variation in characteristics between sensor units. [Summary of the Invention] According to the present invention, the above object is achieved by forming a photoconductive layer containing amorphous silicon as a main component on a substrate, and forming a small number of light-receiving areas on the same surface of the photoconductive layer. A sensor unit in which a pair of electrodes are arranged with an interval of □, which constitutes at least a part, and a color filter made of a dye layer formed by vapor deposition is provided at a position corresponding to the light receiving part) f color In a color photo sensor consisting of a plurality of photoconductive layers disposed close to each other as many as the number needed to decompose a signal, the photoconductive layer of each sensor unit must be a laminated film of two or more layers with different refractive tangents. The refractive index is 3,2 for light with a wavelength of 6328X.
This is achieved by a color photosensor characterized by the following:

[Embodiments of the invention]

Hereinafter, specific examples of the present invention will be described.

In this specification, the lowest layer of the photoconductive layer has a thickness of 1 ka.
-8i subbing layer and one or more layers '1' above it.
It is also sometimes referred to as the a-8t layer.

FIG. 1 is a partial plan view showing an embodiment of a color photosensor array formed by arranging color photosensors of the present invention in an array, and FIG. 2 is an X-Y sectional view thereof. In the figure, 1 is a substrate.

2 is an a-8t subbing layer, 3 is an a-Si layer, and these constitute the photoconductive layer. 4 is an n-layer which is an ohmic contact layer, and 5 is a conductive layer, that is, an electrode. 6 is a protective layer. 7 is a color filter.

As the substrate 1, glass such as +7059 manufactured by Corning, 7740 manufactured by Corning, SCG manufactured by Tokyo Ohka, quartz glass, ceramic such as partially braced ceramic, etc. can be used.

The photoconductive layer is made of an amorphous material containing a-81i as a main component, and the a-8i subbing layer 2 preferably has a refractive index of 3.2 or less. Moreover, the refractive index of the a-8t layer 3 is greater than 3.2,
Preferably it is about 3.4. The photoconductive layer is plasma CV
The layer is formed by a method such as the D method, a reactive sputtering method, or an ion grating method, particularly a plasma CVD method.

In the photoconductive layer thus formed, stress is generated due to the hydrogen absorbed during layer formation, and if this stress is too large, the adhesion with the substrate deteriorates and the film is likely to peel off.

The magnitude of stress in the photoconductive layer can be controlled by appropriately setting conditions during layer formation, such as discharge power of glow discharge, substrate temperature, source gas composition, and source gas pressure. and an a-8t subbing layer 2 adjacent to the substrate 1;
For example, at a relatively large discharge power, the glow emission%
By doing this, it is possible to form a layer with low stress and maintain good adhesion to the substrate 1.

On the other hand, stress in the photoconductive layer has a strong correlation with the refractive index of the layer, and it is generally known that the lower the stress, the lower the refractive index. It has also been found that in order to obtain good photoconductivity of the photoconductive layer, it is necessary to perform glow discharge at a relatively low discharge power.

Therefore, after first performing glow discharge with a relatively large discharge power on the substrate 1 to form an a-81 subbing layer 2 having a relatively small refractive index, for example, a refractive index of 3.2 or less, a relatively small discharge It is preferable to perform glow discharge using electric power to form the a-Si layer 3 having a relatively large refractive index, for example, a high photoconductivity with a refractive index of about 3.4.

The electrode 5 is made of a conductive film such as At. The protective layer 6 is an insulating inorganic film such as SiN:H or various insulating organic resin films.

The color filter 7 is formed into a thin film by vapor-depositing a dye such as a pigment that is thermally stable and exhibits sublimation property. Dyes for forming such color filters include acetoacetic anilide type, naphthol monoazo type, polycyflic type, dispersion type, oil-soluble type,
Various examples include indanthrene type, cyanine type, etc. Particularly preferred are 7-thalocyanine, perylene, isoindolinone, anthraquinone, and quinacridone dyes. less than
゛Illustrate representative dyes.

Examples of 7-thalocyanine pigments include metal-free phthalocyanine, copper-7 thalocyanine, beryllium-7 p-cyanine, magnesium phthalocyanine, zinc phthalocyanine, titanium-7 thalocyanine, tin-phthalocyanine, lead phthalocyanine, vanadium phthalocyanine, and chromium-7.
Examples include talocyanine, molybdenum phthalocyanine, manganese phthalocyanine, iron phthalocyanine, cobalt phthalocyanine, nickel 7-thalocyanine, palladium phthalocyanine, and platinum 7-thalocyanine.

As perylene dyes, perylenetetracarboxylic acid derivatives are preferred, examples of which include the following.

(Hereinafter indicated by symbols from ■ to ■) ■ In the above formula, R1 is −■ ■ p
R4#-CM, u■ In the above formula, R1 is -(
)-oCH3 ■ // R1tt
<ΣOC2H5tr However, the perylenetetracarginic acid derivatives are not necessarily limited to these.

Commercially available perylenetetracaldic acid derivatives include Paliogun Red L 3870 HD (manufactured by BASF).
Noyari Ogun Red L3880HD (p)/f
Mother-Mured BL (manufactured by Hoechst) Perindo Maroon R6434C Pa' (manufactured by Elle) Perindo Red
R6418 (tr) □ Heliofast Maru/Ei3R (#) Kaya Cerato Scarlet E-2R (manufactured by Nippon Kayaku) Kayaset Del Tote D (#) I/L/f Zon Red BPT (manufactured by Chinodo Geigy) etc. (sometimes product name).

The isoindolinone dyestuff has an aromatic condensed polycyclic structure in which heteroatoms are interdigitated, and can basically be represented by the following formula.

Although those in which the 4.5 and 6.7 positions are not substituted with chlorine can also be included, the substituted type is preferable in terms of light resistance and solvent resistance.

The color varies from yellow to orange to reddish-brown depending on the structure of R in the formula, but it is particularly excellent as a yellow pigment due to its versatility and characteristic spectral properties.

Examples of typical isoindolinone dyes include those in which R in the above formula is as follows.

However, isoindolinone dyes are not necessarily limited to these.

Commercially available isoindolinone pigments include Irgazin Yellow 2GLT, 2GLTE, 2
GLTN (manufactured by Chipa Geigy) Lionogun Yellow 3GX (manufactured by Toyo Ink) First Gun Super Yeo -GR, GRO,
GROH (Dainippon Ink) Irgazin Yellow 2RLT, 3RLT, 3R
LTN (manufactured by Chipa Iggy) Lionodan Yellow RX (manufactured by Toyo Ink) Resol Fast Yellow 1840 (BAS
F) Kayaset Yellow E-2RL, E-3RL
176 (manufactured by Nippon Kayaku), Chromo 7 Tar Orange 2G (manufactured by Chipa Geigy), Irgazin Red 2BLT (manufactured by Chipa Geigy) and Nato (all trade names).

Furthermore, anthraquinone dye refers to anthraquinone derivatives and similar quinones.

An example of the structure of a typical anthraquinone yellow pigment is shown below.

0 υHowever, the anthraquinone dye is not necessarily limited to these.

Commercially available anthraquinone pigments include Chromo7 Tar Yellow A2R (manufactured by Chi/Zygy), C
IA70600 Heliofast Yellow E3R (Bayer type) OgunyeμmL1560 (BA
8F back) 68420 Kaya Set Yellow E-R
(Nippon Kayaku) CIA65049 Chromophthal Yellow AGR (Ciba Geigy, IJ) Pipelast Yellow E2G (Baie Karisu) Nihonsurene Yellow GC
N (manufactured by Sumitomo Chemical) 67300 Mikethrene Yellow GK (Mitsui Toatsu B) 61725 Indanthrene Printing Yellow GOK (manufactured by Hoechst) 59100 Anthrazole Yellow V (manufactured by Hoechst) 60531 Mikethrene Soluble Yellow 12G (Mitsui Toatsu B) (manufactured by Mitsui Toatsu) 60605 Mikethren Yellow GF (manufactured by Mitsui Toatsu) 6651
0 Japanese Thren Yellow GGF (ffl Yukagaku) 65430 Indanthrene Yellow 3G (Bayer type) 65405 Japanese Thren Yellow 4G
L (Sumitomo Chemical) Parathrene Yellow PGA
(Manufactured by BASF) 68400 Chipanon Ye l-1-2G (Chipa Geigi-JA
) Indanthrene Yellow F2GC (manufactured by Heath)) Anthrazole Yellow IGG (manufactured by Hoechst) Indanthrene Yellow 5GF (manufactured by BASF) Mikethrene Yellow 3GL (Yomiao Wuying) Indanthrene Yellow LGF (BASFff) Mono Examples include Light Yellow FR (manufactured by ICI), Kayaset Yellow E-AR (manufactured by Nippon Kayaku), etc. (all are trade names).

Quinacridone dyes have a basic skeleton represented by formula (1), and include derivatives derived from it.

Examples of derivatives include etc. can be opened. There may also be a mixture of these.

In terms of spectral characteristics, both have excellent magenta characteristics.

Specific pigments include Lionogun Magenta R (product name: manufactured by Toyo Ink), First Dance-Ver Magenta R, R8 (product name manufactured by Nippon Ink), and Shincasia Red BRT, YRT (product name: manufactured by DuPont). Syncacia Piolet) BRT (Product name:
(manufactured by DuPont) etc. (all are product names).

When vapor depositing such a dye, a mask with a desired pattern is placed on the protective layer 6 in advance, or a dye layer is formed only on desired areas by selective heating, and then a filter is applied. Set it to 7.

Alternatively, it is also possible to form the filter 7 only in desired areas by uniformly depositing the dye layer over the entire surface and then removing unnecessary portions of the dye layer by photolithography, such as dry etching.

For color reading, for example, as shown in FIG.
Filter 7, G filter 7' and B filter 7
One pixel 10 may be constructed from these three light receiving sections. Such pixels 10 are consecutively arranged in the photosensor array.

Hereinafter, the present invention will be explained in detail using examples.

Example 1: Glass substrate for double-sided polishing tube (manufactured by Corning Inc., $7059)
was washed using a neutral detergent or an organic alkaline detergent. Next, the glass substrate 1 is set in a capacitively coupled glow discharge decomposition device, and subjected to lXl0 Tor.
The temperature was maintained at 230°C under an evacuation vacuum of r.

Next, in the device, epitaxial grade 9 pure 5IH is added.
4 gas (manufactured by Komatsu Electronics) was introduced at a flow rate of 10 SCCM, and the gas pressure was set at f 0.07 Torr. Thereafter, using a high frequency power source of 13, 56 MHz, the input voltage was increased to 2. OkV.

Glow discharge was performed for 2 minutes at RF (Radlo Frequency) discharge power of 120W, and the thickness was approximately 400X.
A-81 subbing layer was formed. Next, the input voltage was immediately lowered to 0.3 kV, and glow discharge was performed for 4.5 hours with a discharge power of 8 W, thereby forming the entire a-81 layer with a thickness of about 0.8 μm.

Subsequently, SiH4 diluted to 10% with H2 and 1 with H2
Using a gas mixed with PH3 diluted to 0.00 ppm at a mixing ratio of 1:10 as the total raw material, an n medium layer (about 0.15 μm in thickness) as an ohmic contact layer was deposited with a discharge power of 30 W. Next, U was deposited to a thickness of 0.3 μm by electron beam evaporation to form a conductive layer.

Next, a digital photoresist (AZ-1 manufactured by SIL Co., Ltd.
370) After forming a photoresist arm turn in the desired shape using T-T, phosphoric acid (85 volumes in water), nitric acid (60 volumes in water), glacial acetic acid, and water were mixed in a 16:1 ratio.
The exposed portions of the conductive layer were removed using a solution □ (hereinafter referred to as "etching solution") mixed at a volume ratio of 2:1. Next, by plasma etching using a parallel plate type device, RF
CF4 at discharge power 120W 1 gas pressure 0.07 Torr
Dry etching with gas was carried out to remove the exposed portion of the n-middle layer.Then, the foot resist was peeled off.

Next, using the gas mixed with SIH4 diluted to 1096 with H2 at a total mixing ratio of 1:5 as a raw material, release 1! power 3
0W, gas pressure 0.1 Glow discharge with Toyy for 2 hours,
A 0.7 μm silicon nitride layer was formed.

Next, a positive photoresist (manufactured by Tokyo Ohka Co., Ltd., trade name 0DUR101) was applied onto this protective layer by a spinner coating method.
3) was applied to a film thickness of 100OOX.

After completing the complete silibake at 120°C for 20 minutes, mask exposure was performed using deep ultraviolet light, immersion in a special developer for the 0DURIOIO series for 3 minutes, and immersion in a dedicated rinse solution for 2 minutes to form a resist mask. - Next, the entire surface of the photosensor on which the resist mask was formed was exposed to light to make it soluble in a solvent. Next, a photo sensor and Cu 7 talocyanine packed in M(1?-t) were placed in an empty container.
Mo was heated to 450 to 550° C. under a vacuum degree of 10 −5 to 1 O −6 Tor to perform vapor deposition of Cu phthalocyanine. The film thickness was 2000X. Thereafter, a patterned blue dye layer was formed by immersing and stirring in a developer exclusive for the 0DURIOIO series and removing unnecessary portions of the deposited film while dissolving the resist mask.

In a similar manner, Irgazine Red BPT was used as a red pigment layer.
('Product Name 2' CIA71127 manufactured by Ciba Geigy)
A color filter was formed using PB phthalocyanine as a green dye layer, and a color photosensor was manufactured. .

On the other hand, □For comparison, the same glass substrate as above was treated for 30 seconds with a solution containing a mixture of aqueous solution of acetic acid and acetic acid at a volume ratio of 1:5:40, except that no a-8i underlayer was formed. Then, in the same way as the above process, a solenar type photosensor (
A product (hereinafter abbreviated as "7 Otosensor with substrate acid treatment and no subbing layer") was manufactured.

When we compared the photocurrent values obtained with white light incident from the color filter side under the same conditions for the above two types of 7-otosensors, almost the same values were obtained for both. This shows that the presence of the a-8i subbing layer 2 in the photosensor of the present invention does not cause S/Nt deterioration.

Next, we conducted a durability test using a heat cycle under the same conditions for the above two types of 7-otosensors.
Similarly, it was found that the film did not peel off and had sufficient adhesion.

Example 2: In the 7 otosensor manufacturing process of Example 1, Example 1 was performed except that gray discharge was performed using the following combinations of discharge power and discharge time when forming the a-81 subbing layer 2. I performed the same type of work as ・As a result, the discharge power was 80W.
In the case of discharge power of 30W, 8W, and 4W, a photosensor could be obtained without film peeling. The film peeled off during cleaning (including cleaning), and the intended good photosensor 2 could not be obtained.

Example 3: After forming the A-8T subbing layer 2 in the same manner as in Examples 1 and 2, the substrate 1 was taken out and the refractive index of the A-81 subbing layer 2 formed on the substrate 1 was measured. did. The relationship between the discharge power of glow discharge and the refractive index of the a-Si subbing layer 2 is shown in FIG.

The adhesion between the substrate and the photoconductive layer is related to the discharge power of the glow discharge during film formation, and film peeling is caused by the intrinsic stress induced depending on the internal structure of the thin film and the coefficient of thermal expansion between the film and the substrate. It is thought that this is due to the total stress resulting from the combination with the internal stress that depends on the difference.

Therefore, the a-81 subbing layer 2 formed on the substrate 1
The total stress was measured. Discharge power of glow discharge and a −S
The relationship between i and the total stress of the subbing layer 2 is shown in FIG. Stress appears as compressive stress, and shows a maximum value when the discharge power is around 10 W, but the stress decreases as the discharge power increases.

As the discharge power increases, the stress decreases and increases mainly in the film? This is thought to be because the id generates tensile stress, which offsets the compressive stress.

As mentioned above, the photoconductivity of the photoconductive layer is related to the discharge power during film formation, and in order to obtain the desired photoconductive properties it is necessary to perform the deposition at a relatively low discharge power. The third A-81 layer in Examples 1 and 2 was deposited with relatively low discharge power.

From the above, it can be seen that the a-Si subbing layer 2 of the photosensor of the present invention functions as a stress relaxation layer and exhibits the effect of improving the adhesion between the substrate and the photoconductive layer. Further, in the photosensor of the present invention, in order to maintain a good S/Ni ratio, it is preferable that the thickness of the a-8i subbing layer 2 is not very thick, and for example, it is desirable that the thickness is not more than aoooX.

Example 4: In the 7 otosensor manufacturing process of Example 1, after forming the a-8t layer 3, the discharge power was increased to y, -a o w and 25
The same steps as in Example 1 were carried out, except that glow discharge was performed for a minute and an a-81 layer was further formed.

FIG. 5 is a partial sectional view of the planar photosensor thus obtained, showing the same portion as FIG. 2. In FIG. 5, members similar to those in FIG. 2 are denoted by the same reference numerals, and 3' is an a-Si layer.

The thickness of the a-81 layer 3' was 0.3μ, and the formation speed of this layer per unit thickness was slower than that of the a-81 layer 3 because the discharge power was increased. is also significantly larger.

In the photosensor obtained in this example, a-8
A photoconductive layer is composed of the subbing layer 2, the a-81 layer 3, and the a-8i layer 3'. According to the photosensor of this example, the obtained photocurrent is larger than that of Example 1 due to the increased thickness of the a-8t layer.

Example 5: In the photosensor manufacturing process of Example 1, except that when forming the a-8i subbing layer 2, the substrate temperature Yr was maintained at 70° C. and glow discharge was performed for 15 minutes at a discharge power of 8 W. The same steps as in step 1 were performed.

After forming the A-8T subbing layer 2 under the same conditions, the substrate 1vL was taken out and the refractive index of the A-8I subbing layer 2 was measured and found to be 3.10.

The photosensor obtained in this example was as good as the photosensor obtained in Example 1.

Example 6: In the 7 otosensor manufacturing process of Example 1, when forming the a-81 subbing layer 2, 5IH4￥r diluted to 5g6 with H2 was used as a raw material gas, and tallow discharge was performed for 10 minutes at a discharge power of 30W. Except for this, the same steps as in Example '1 were carried out.

When the a-81 subbing layer 2 was formed under the same conditions, the substrate was taken out and the refractive index of the a-8i subbing layer 2 was measured and found to be 3.02.

The photosensor obtained in this example was as good as the photosensor obtained in Example 1.

Example 7: In the 7 otosensor manufacturing process of Example 1, the gas pressure was set to O-30 Torr when forming the 1-81 subbing layer 2,
Except for glow discharge for 5 minutes with a discharge power of 50W.
The same process as in Example 1 was carried out.

When the A-81 subbing layer 2 was formed under the same conditions, the substrate was taken out and the refractive index of the A-8I subbing layer 2 was measured and found to be 3.12.

The 7 photosensors obtained in this example were as good as the photosensors obtained in Example 1.

Example 8: In the same manner as in Example 1, 864 7-otosensors were arranged in a play pattern on the same substrate 1 and manufactured. At this time, seven sensor arrays were used, and color filters were arranged to form a repeating array of R, G, and B as shown in FIG. This can be easily done by appropriately setting a mask during one photolithography step.

A schematic partial plan view of the long photosensor array thus obtained is shown in FIG. In FIG. 6, 11 is an individual electrode, 12 is a common electrode, and 13 is a color filter. The density of this elongated photosensor array is 8 pixels/m, and the length is the width of an A6 plate.

The uniformity of photocurrent and dark current between bits of the photosensor array obtained in this example was measured. still,
At this time, incident light was used such that the amount of light after passing through each of the R, G, and B' filters was uniform.

The results are shown in FIG.

On the other hand, for comparison, a long photosensor array bit was prepared by arranging 864 7-otosensors in an array on the same substrate by the method described in Example 1 with the substrate acid-treated and without the subbing layer. The uniformity of photocurrent and dark current between the samples was similarly measured.

The results are shown in FIG.

A comparison between FIG. 7 and FIG. 8 shows that the seventh otosensor of the present invention has no microscopic defects on the substrate, and
It can be seen that the uniformity of the photoconductive properties is extremely good because the subbing layer acts as a stress relaxation layer ◎ Example 9: The red pigment is Palm Red BL (manufactured by Hoechst) f: The film thickness is 2000℃ by heating at 400-500℃.
A color photosensor was manufactured in the same manner as in Example 1, except that a red color filter consisting of a red dye layer was formed in Example 1.

An attempt was made to compare the performance of the color filter in the photosensor thus obtained and a conventional dyed color filter.

(1) Heat resistance When we conducted a heat resistance test at 250°C for 1 hour, we found that the spectral characteristics of conventional dyed filters changed significantly (peak transmittance of 10 cm or more, peak wavelength shift of 1 Onm or more).
However, in the vapor deposited filter in this example, the change in spectral characteristics was small (peak transmittance within 5%, peak wavelength shift within 5 nm).

(2) Light resistance When we conducted a light resistance test of Xe271 for 500 hours of irradiation, we found that the spectral characteristics of the conventional dyed filter changed significantly (peak transmittance of 10% or more, peak wavelength shift) of 10 nm.
m or more), but there was almost no change in the spectral characteristics with the vapor deposited filter in this example. Since it is possible to use the ordinary 7-otolithography and roughy technique for pattern formation, the characteristics of the A-81 photoconductive layer are hardly deteriorated during the formation of the color filter. Further, since pattern formation is performed by photolithography, filter formation on an uneven surface can be performed accurately, and a highly accurate color filter can be formed.

Further, since the color filter of the color photosensor of the present invention is a dye layer formed by vapor deposition, it has excellent light resistance to incident light and heat resistance, and can maintain good performance over a long period of time.

Further, according to the color photosensor of the present invention, it is possible to equalize the characteristics among the senna units.

[Brief explanation of drawings]

FIG. 1 is a plan view of the color photosensor of the present invention, and FIG. 2 is an X-Y cross-sectional view thereof. FIGS. 3 and 4 are graphs showing the characteristics of the a-8t underlayer. FIG. 5 is a partial cross-sectional view of the seventh human sensor of the present invention. FIG. 6 is a partial plan view of the photosensor array; Figure and 8th
The figure is a graph showing the characteristics of photocurrent and dark current. . Substrate, 2: a-81 subbing layer, 3.3': a-8
i layer, 4: n middle layer, 5 two conductive layers, 6: protective layer, 71 two color filters. Figure 1 Figure 2 Light Figure 3 Family ft Force (W) Figure 5 Figure 6 Figure 7 Bit reference

Claims (3)

[Claims] (1) A photoconductive layer containing amorphous silicon as a main component is formed on a substrate, and a pair of electrodes are arranged on the same surface of the photoconductive layer at a distance that constitutes at least a part of the light receiving section. In a color photosensor, a plurality of sensor units are disposed close to each other in the number necessary to separate color signals, and each sensor unit is provided with a color filter made of a dye layer formed by vapor deposition at a position corresponding to the light receiving part. , wherein the photoconductive layer of each sensor unit is composed of two or more laminated films having different refractive indexes, and the refractive index of the lowest layer of the laminated film is 3.2 or less for light with a wavelength of 6328 Å. , color photo sensor. (2) The color photosensor according to item 1, wherein the dye layer contains a pigment as a main component. (3) The color photosensor according to item 1, wherein the thickness of the bottom layer of the photoconductive layer is 3000 Å or less.