JP2712042B2 - Manufacturing method of color filter - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a color filter, and more particularly to a method for manufacturing a color filter suitable for fine color separation such as a color image sensor, a color sensor, and a color display. Things.

2. Description of the Related Art Conventionally, a color filter is manufactured by sequentially and repeatedly forming a plurality of colored patterns having different hues on a transparent substrate such as glass or plastic or an opaque substrate such as Si.

Typical production methods of the color filter include a dyeing method, an electrodeposition method, a printing method, and the like. In recent years, one of the methods for producing a fine pattern color filter stably with high productivity is disclosed in JP-A-57-16407, JP-A-57-747
No. 07, Japanese Patent Application Laid-Open No. 60-129707, Japanese Patent Application Laid-Open No. 62-218902, etc. have proposed a method of forming a pattern by photolithography using a photosensitive resin.

On the other hand, there is a strong demand for improvement in color reproducibility as a device from the performance improvement of a color device in which a color filter is provided. That is, for example, in the case of a color image sensor or a color sensor, it is desired to prevent the generation of stray light due to light transmitted between color filter pixels and the prevention of color mixing with adjacent pixel colors due to obliquely incident light. It is desired to prevent a decrease in contrast and color purity due to light transmitted between the color filter pixels. In recent years, especially in the trend of small size and high density of image sensor and large size and high definition of sensors and displays,
These requests are strong.

As a solution to this, generally, a method of forming a non-light-transmitting film in a portion between the color filter pixels has been adopted.

Conventionally, as a method of forming such a non-translucent film between the color filter pixels, for example, a method of forming a color filter while aligning on a substrate on which a non-translucent film pattern is formed in advance, Alternatively, a method has been used in which a non-light-transmitting film pattern is formed while being aligned on a substrate on which a color filter pattern has been formed in advance. That is, in any of these methods, the alignment operation is performed between the formation of the color filter pattern and the formation of the non-light-transmitting film pattern. It was difficult to form a non-translucent film pattern of a consistent size. Further, when these overlapping portions occur, a step is formed on the color filter, and it is difficult to form a color filter which is structurally required and has excellent flatness.

[Problems to be Solved by the Invention] An object of the present invention is to solve the above-mentioned drawbacks of the conventional example, and to form a non-translucent metal film without gaps between color filter pixels having a fine pattern by a simple manufacturing process. An object of the present invention is to provide a method for manufacturing a color filter that can be arranged.

It is a further object of the present invention to provide a color device having excellent characteristics.

[Means for Solving the Problems] and [Operation] That is, the present invention relates to a method of manufacturing a color filter in which a metal film is arranged without gaps between color filter pixels of each color on a substrate. Forming a conductive film pattern; and (b) having a width greater than the inter-pattern width between the conductive film patterns and having a gap between adjacent pixels on the conductive film pattern, Forming a color filter pixel made of a colored resin pattern; and (c) selectively plating a metal film on at least a conductive film provided between the plurality of colored resin patterns. A method for manufacturing a color filter, characterized in that a metal film is formed without a gap therebetween.

According to the color filter manufacturing method of the present invention, since the conductive film pattern and the color filter pattern subjected to metal plating are formed while partially overlapping,
At least the conductive film is exposed without any gap between the color filter patterns. As a result, if metal plating is performed on this conductive film, the metal film is formed without any gap between the color filter pixels in a self-aligned manner. It can be formed.

In an image sensor or a sensor device using such a color filter, improvement in color reproducibility can be expected, and sufficient light shielding leads to prevention of malfunction of the optical element. Further, in the liquid crystal display device, improvement in contrast and color purity can be expected, and it is possible to additionally have a function as an electrode auxiliary line. It is also effective in preventing display quality from deteriorating due to heat generation in the cell.

Furthermore, since a color filter structure having more excellent flatness can be adopted as compared with the conventional one, a device having a display quality with less alignment defects can be obtained in a type in which a color filter is provided in a liquid crystal display. .

 Hereinafter, the present invention will be described with reference to the drawings.

1 (a) to 1 (e) are process drawings showing a typical embodiment of the method for producing a color filter of the present invention. First, as shown in FIG. 1A, a conductive film is formed on a substrate 1 and then patterned to form a conductive film pattern 2 having a gap width smaller than the color filter pattern width. Next, as shown in FIG. 1 (b), the gap between the formed conductive film patterns has a width larger than the width between the patterns, and a gap between adjacent pixels is formed on the conductive film pattern. A colored resin pattern 3 of a colored resin is formed so as to have. Then, the pattern formation using the colored resin is repeated a plurality of times with a colored resin having another hue, and as shown in FIG.
A color filter pixel composed of 3, 4, and 5 is formed.

Using the color filter substrate formed in this manner, a metal is electrically or chemically formed on the conductive film pattern 2 while giving selectivity between the exposed conductive film pattern and the color filter pixel. By protruding the film, the metal film pattern 6 can be formed without gaps between the color filter pixels as shown in FIG. 1 (d). If necessary, as shown in FIG. 1 (e), a protective film 7 can be formed on the color filter pixel.

As a method of forming a conductive film pattern in the present invention, a method of patterning a transparent conductive film such as ITO (indium-tin-oxide) by etching, or a method of patterning a non-transparent metal film such as Cu or Al by etching. Etc. can be selected. These conductive films are formed by a vacuum film forming method such as evaporation or sputtering, and have a thickness of about 100 to 5000 Å, preferably 500 Å.
~ 2000mm is suitable.

Examples of the resin forming the colored resin pattern of the color filter according to the present invention include gelatin, casein,
Glue, polyvinyl alcohol, polyimide, polyamide imide, polyester imide, polyamide, polyester, polycarbonate, polyvinyl acetal, polyvinyl acetate, polystyrene, cellulose resin, melamine resin, urea resin, acrylic resin, epoxy resin, polyurethane resin, polysilicon resin and These resins can be arbitrarily selected from resins having photosensitivity and general photoresist resins.

The coloring material for forming the colored resin pattern of the color filter in the present invention is not particularly limited as long as it can obtain desired spectral characteristics among organic pigments, inorganic pigments, dyes, and the like. In this case, each material can be used alone or as a mixture of some of them. However, in view of the color characteristics and various performances of the color filter, an organic pigment is most preferable as the coloring material.

Organic pigments include azo pigments such as soluble azo, insoluble azo and condensed azo pigments, phthalocyanine pigments, and indigo, anthraquinone, perylene, perinone, dioxazine, quinacridone, and isoindolinone. Phthalone-based, methine-azomethine-based, other condensed polycyclic pigments including metal complex-based pigments, or a mixture of some of them.

In the present invention, the colored resin liquid used to form the colored resin pattern is prepared by mixing the above-mentioned colored material having desired spectral characteristics in a solution of the above-mentioned resin at a ratio of about 10 to 150% by weight, and using ultrasonic wave or tri-color. After sufficiently dispersing with a roll or the like, the mixture is prepared by removing a substance having a large particle size using a filter.

The colored resin pattern of the color filter according to the present invention is formed into a pattern by applying the colored resin liquid onto a substrate using a coating device such as a spinner, a roll coater, or a printing device, and performing a photolithography process or a process of printing simultaneously with the coating. It is formed and its film thickness is determined according to the desired spectral characteristics, but is usually about 0.5 to 5 μm, preferably about 1 to 2 μm.

The metal film in the present invention can be arbitrarily selected from general metal materials that can be plated, such as Cu, Ni, Ag, and Au, and alloys composed of two or more metals. In particular, in a liquid crystal display, in order to reduce the resistance value of the transparent electrode, it is preferable to select a transparent electrode having a smaller specific resistance. In addition, the metal film is formed by electroplating the above-mentioned metal material using a conductive film pattern, or by electroless plating comprising chemical treatment, and has a thickness of about 100 to 5 μm, preferably About 100Å-3μm,
More preferably, about 1000 to 2 μm is suitable.

When the thickness of the metal film is formed so as to be substantially equal to the upper part of the color filter, a remarkable effect on the flatness of the color filter is recognized. It becomes possible to form a panel excellent in the above. Furthermore, by making electrical contact with the transparent electrode formed on the color filter, it is possible to reduce the resistance of the wiring, and it is effective in measures against signal delay in large-screen displays and measures against heat generation in the panel, resulting in excellent display quality. Panel can be formed.

The colored resin pattern of the color filter according to the present invention may be formed, if necessary, on the surface of the colored resin pattern by using an organic resin such as polyamide, polyimide, polyurethane, polycarbonate, acrylic, epoxy, or silicon, or Si ₃ N ₄ or SiO _2. , SiO, Al ₂ O ₃ , Ta ₂ O ₃ or other inorganic film can be provided as a protective film by a coating method such as spin coating or roll coating, or by an evaporation method.

A color filter having a colored resin pattern as described above can be formed on an appropriate substrate. For example, glass plate, transparent resin plate, resin film, or CRT display surface, light receiving surface of image pickup tube, CCD, BBD, CID, BASIS
Wafers with solid-state imaging devices such as, contact-type image sensors using thin-film semiconductors, liquid crystal display surfaces,
And a photoreceptor for color electrophotography.

When it is necessary to further increase the adhesiveness between the colored resin pattern and the underlying substrate, the colored resin pattern is formed on the substrate in advance with a thin coating with a silane coupling agent, or the like. It is more effective to form a color filter by using a mixture of a small amount of a silane coupling agent and the like.

EXAMPLES Examples of the present invention will be shown below, and will be described more specifically.

Example 1 An ITO film was formed on a glass substrate by sputtering to a thickness of 1500 °, and a stripe-shaped pattern having a width of 20 μm larger than the gap width of the color filter pattern of 10 μm was formed by ordinary patterning.

Next, on this substrate, a width of 90 μm larger than the ITO pattern gap width was used between the ITO stripe patterns by the following method.
Was formed in a striped color filter.

That is, a blue colored resin material [Heliogen Blue L70 that can obtain desired spectral characteristics]
80 (trade name, manufactured by BASF, CI No. 74160) and PA-1000 (trade name, manufactured by Ube Industries, Ltd., polymer content: 10%, solvent: N-methyl-2-pyrrolidone, pigment: polymer = 1: 2) The photosensitive colored resin solution prepared by dispersing in (formulation)) was applied to a thickness of 1.5 μm by a spinner coating method, and prebaked at 70 ° C. for 30 minutes. Next, exposure was performed with a high-pressure mercury lamp through a pattern mask corresponding to the pattern shape to be formed. After the completion of the exposure, development using a dedicated developer that dissolves only the unexposed portions of the colored resin film using ultrasonic waves, treatment with a dedicated rinse solution, post-baking at 200 ° C. for 30 minutes, patterning A blue colored resin film having a shape was formed.

Subsequently, a green colored resin material [Lionol Green 6YK (trade name, manufactured by Toyo Ink Co., Ltd., C.I.
Photosensitivity prepared by dispersing I.No.74265 in PA-1000 (trade name, manufactured by Ube Industries, Ltd., polymer content: 10%, solvent: N-methyl-2-pyrrolidone, pigment: polymer = 1: 2) , A green colored pattern was formed at a predetermined position on the substrate in the same manner as described above except that the above-mentioned colored resin liquid was used.

Further, as a third color, a red colored resin material [Irgazin Red BPT (trade name, manufactured by Ciba-Geigy), CINo. .71127) to PA-10
00 (trade name, manufactured by Ube Industries, polymer content 10%, solvent = N
-Methyl-2-pyrrolidone, pigment: polymer = 1: 2), and a red colored pattern is formed at a predetermined position on the substrate in the same manner as described above. Formed and have a width between the ITO stripe patterns on the substrate that is greater than the pattern gap width.
(Red), G (green) and B (blue) colored patterns of three color stripes were obtained.

ITO of the color filter substrate obtained in this way
Connect the pattern to the poles and apply 0.1 (A
/ cm ² ) for 2 minutes at a current density of 1.
A 35 μm Ni film was selectively formed on the exposed ITO pattern.

The obtained color filter had a structure in which a metal film was disposed without any gap between the stripe patterns of each color.

Example 2 Cu was sputter-deposited on a glass substrate to a thickness of 2000 mm, and a stripe pattern having a width of 20 μm, which was larger than the width of the color filter pattern gap of 10 μm, was formed by ordinary patterning.

Next, using the same coloring resin agent as in Example 1 between the Cu stripe patterns on this substrate,
R having a width of 90 μm larger than the stripe pattern gap width
(Red), G (green) and B (blue) three-color stripe color filters were formed.

The exposed Cu pattern on the color filter substrate thus obtained was subjected to electroless Cu plating to form a pattern substantially similar to the color filter.

The obtained color filter had a structure in which a metal film was disposed without any gap between the stripe patterns of each color.

Example 3 Using the color filter substrate formed in Example 2, a ferroelectric liquid crystal element 21 having the structure shown in FIG. 2 was formed as follows.

That is, photosensitive polyimide [PI-300 (trade name, manufactured by Ube Industries, Ltd.)] is used as a protective film 29 on a color filter having a non-light-transmitting metal film pattern 20 between pixels.
The coating was formed with a film thickness of

Next, using a pattern mask corresponding to the pattern formation to make contact with the non-translucent metal film pattern, exposure,
Developing and rinsing treatments were performed, and post-baking was performed to form a protective film pattern having a through hole on the non-translucent metal film.

Then, a 1500-mm-thick ITO film was formed by a sputtering method, and a pattern for making contact with the non-translucent metal film was formed. Thus, a pattern of the transparent electrode 25 was obtained. Subsequently, a polyimide film having a thickness of 100 mm was applied as an orientation control film 27 by a printing method, and rubbing treatment was performed.

Spray 1.5 μm diameter silica beads between the color filter substrate and the opposing substrate obtained in this way and attach them so that the striped pattern electrodes of both substrates are perpendicular to each other to form a cell. Liquid crystal 24 was injected and sealed to obtain a liquid crystal element.

The resulting ferroelectric liquid crystal device has excellent contrast and color purity, and the lowering of the resistance of the transparent electrode due to the non-transparent metal film to which the contact is made reduces signal quality and lowers display quality due to heat generation in the cell. Not an excellent one.

Furthermore, a liquid crystal element with few alignment defects was able to be obtained by the color filter with few steps.

Example 4 Using a thin film transistor as a substrate, a color liquid crystal display device having the color filter of the present invention formed on the substrate was produced as follows.

First, as shown in FIG. 3 (a), an ITO pixel electrode 31 having a thickness of 1000 mm is formed on a glass substrate (trade name: 7059, manufactured by Corning) in a desired pattern by a photolithography process. In addition, vacuum-deposit Al to a thickness of 1000 mm,
The deposited layer was patterned into a desired shape by a photolithography process to form a gate electrode 32 as shown in FIG. 3 (b).

Subsequently, a photosensitive polyimide is applied on the surface of the substrate 1 provided with the electrodes to form an insulating layer 33, and through-holes 34 forming a contact portion between the drain electrode 38 and the pixel electrode 31 by pattern exposure and development processing. Was formed as shown in FIG. 3 (c).

Here, the substrate 1 is set at a predetermined position in the deposition tank,
SiH ₄ diluted with H ₂ was introduced into the deposition tank, and a 2000 mm thick a-Si layer was formed on the entire surface of the substrate 1 provided with the electrodes 31 and 32 and the insulating layer 33 by a glow discharge method in a vacuum. after推積a photoconductive layer (intrinsic layer) 35 made of, by continuing the same operation on the photoconductive layer 35, the layer thickness of 1000 Å n ⁺
Layer 36 was laminated as shown in FIG. 3 (d). The substrate 1 was taken out of the deposition tank, and each of the n ⁺ layer 36 and the photoconductive layer 35 was patterned into a desired shape by dry etching in this order as shown in FIG. 3 (e).

Next, on the substrate surface on which the photoconductive layer 35 and the n ⁺ layer 36 are provided, Al is vacuum-deposited with a thickness of 1000 mm, and the Al-deposited layer is patterned into a desired shape by a photolithography process. Then, a source electrode 37 and a drain electrode 38 as shown in FIG. 3 (f) were formed.

Further, after forming an insulating layer 39 thereon, the pixel electrode
In accordance with the method of Example 2, three colored patterns of red, blue, and green having a light-shielding layer of a metal film between the patterns are formed as shown in FIG. After the formation, as shown in FIG. 3 (h), a polyimide resin is applied to the entire surface of the substrate as a protective film 7 having an orientation function so as to have a thickness of 1200 °, and the resin is cured by heating at 250 ° C. for 1 hour. The thin film transistor integrated with the color filter was manufactured.

A color liquid crystal display device was further formed using the thin film transistor with a color filter manufactured as described above.

That is, a 1000 ° ITO electrode layer is formed on one surface of a glass substrate (trade name: 7059, manufactured by Corning Incorporated) in the same manner as described above, and a layer made of a polyimide resin is further provided with an orientation function on the electrode layer. An insulating layer having a thickness of 1200 mm was formed, and liquid crystal was sealed between the substrate and the previously formed thin film transistor with a color filter and the whole was fixed to obtain a color liquid crystal display device.

The color liquid crystal display element thus formed is
It had good characteristics.

Example 5 A color filter of the present invention was prepared in the same manner as in Example 4 except that a three-color color filter having a light-shielding layer of a metal film between patterns was provided on a counter electrode via an insulating layer instead of being provided on a pixel electrode. A color liquid crystal display device having a filter was obtained.

The color liquid crystal display element thus formed is
It has good characteristics.

Example 6 A three-color filter having a light-shielding layer of a metal film between patterns was first formed on a counter substrate, then an insulating layer was formed, and a counter electrode was provided thereon in the same manner as in Example 4. A color liquid crystal display device having the color filter of the present invention was obtained.

The liquid crystal display device for color formed in this manner had good characteristics.

Example 7 A wafer on which a CCD (charge, coupled, device) is formed is used as a substrate, and a pattern is formed between the patterns so that each colored pattern of the color filter is arranged corresponding to each light receiving cell of the CCD. A color solid-state imaging device having a color filter of the present invention was formed in the same manner as in Example 1, except that a three-color stripe color filter having a light-shielding layer of a metal film was formed via an insulating layer. Note that an acrylic resin-based protective film was formed on the color filter.

The color solid-state imaging device thus formed had good characteristics.

Example 8 A color filter formed in Example 1 is provided on a wafer on which a CCD (charge, coupled, device) is formed, and a colored pattern of the color filter is formed in correspondence with each light receiving cell of the CCD. The color solid-state imaging device was formed by positioning and sticking to each other so as to be arranged.

The color solid-state imaging device thus formed had good characteristics.

Example 9 A color font sensor array having a color filter of the present invention as shown in the schematic partial plan view of FIG. 4 was formed as follows in accordance with the process shown in FIG.

First, a glass substrate (product name: 7059, manufactured by Corning)
A photoconductive layer (intrinsic layer) 45 made of an a-Si (amorphous silicon) layer was provided on the substrate 1 by a glow discharge method as shown in FIG.

That is, gas SiH ₄ diluted with H ₂ to 10% by volume pressure 0.
50 Torr, RF (Radio Frequency) power 10 W, substrate temperature 25
The photoconductive layer 45 having a thickness of 0.7 μm was obtained by depositing on the substrate at 0 ° C. for 2 hours.

Subsequently, a fifth layer is formed on the photoconductive layer 45 by a glow discharge method.
An n ⁺ layer 46 was provided as shown in FIG.

That is, SiH ₄ diluted to 10% by volume with H ₂ and 10% with H ₂
Using a mixed gas at 1:10 and PH ₃ diluted in 0ppm as a raw material, others, successively the photoconductive layer 45 in the same manner as推積conditions ahead of the photoconductive layer, 0.1 [mu] m layer of A thick n ⁺ layer 46 was provided.

Next, as shown in FIG.
Al is deposited on the n ⁺ layer 46 to a thickness of 0.3 μm to form a conductive layer 49.
Was accumulated. Subsequently, as shown in FIG.
The part corresponding to the part to be the light conversion part of 49 was removed.

That is, after forming a photoresist pattern in a desired shape using a positive type microposit 1300-27 (trade name, manufactured by Shipley) photoresist, phosphoric acid (85% by volume aqueous solution), nitric acid (60% by volume aqueous solution) ), The conductive layer 49 in the exposed portion (the portion where no resist pattern is provided) is removed from the substrate using an etching solution in which glacial acetic acid and water are mixed at a ratio of 16: 1: 2: 1, and the common electrode 41 is removed. And individual electrodes 40
Was formed.

Next, the n ⁺ layer 46 at the portion to be the light conversion portion was removed as shown in FIG.

That is, after the above Microposit 1300-27 photoresist is stripped from the substrate, RF power of 120 W is applied by a plasma etching method (also known as reactive ion etching method) using a parallel plate type plasma etching apparatus DEM-451 (manufactured by Nidec Anelva). Then, dry etching with CF ₄ gas was performed for 5 minutes at a gas pressure of 0.1 Torr, and a part of the surface layer of the exposed n ⁺ layer 46 and the photoconductive layer 45 was removed from the substrate.

In this example, in order to prevent implantation of the cathode material of the etching apparatus, a polysilicon sputtering target (8 inches, purity 99.999%) was placed on the cathode, and a sample was placed thereon. The portion where the SUS was exposed was covered with a Teflon sheet cut out like a donut, and the SUS surface was etched in a state where it was hardly exposed to plasma. Thereafter, heat treatment was performed at 20 ° C. for 60 minutes in an oven in which nitrogen was flowed at a rate of 3 l / min.

On the surface of the photosensor array created in this way,
Next, a protective layer was formed as follows.

That is, a silicon nitride layer as the protective layer 47 was formed on the photosensor array by a glow discharge method.

That is, SiH ₄ diluted to 10% by volume with H ₂ and 100% NH ₃
Is a gas mixture of 1: 4, and the other parts are the same as the a-Si layer, except that the protection layer consists of a 0.5 μm thick silicon nitride (a-SiNH) layer. The layer 47 was formed as shown in FIG.

Further, using this protective layer 47 as a substrate, a color filter composed of three colored patterns of blue 5, green 4, and red 6 having a light shielding layer of a metal film between the patterns is formed in the same manner as in Example 1. Then, a protective film was formed, and as shown in FIG. 4, a color photosensor array in which a colored filter was arranged on each photosensor was formed.

The color photosensor array formed in this example also had good characteristics.

Example 10 The color filter formed in Example 1 was adhered to the photosensor array formed in Example 9 using an adhesive to form a color photosensor array.

The color photosensor formed in the present embodiment also had good characteristics, like the color photosensor formed in the ninth embodiment.

[Effects of the Invention] As described above, according to the method for manufacturing a color filter of the present invention, the color filter pixel patterns are formed on the conductive film pattern subjected to the metal plating process while partially overlapping. Therefore, the conductive film is exposed without any gap at least between the color filter pixels. Therefore, when forming the metal film, the metal film can be provided in a self-aligned manner without any gap between the color filter pixels of each color.

Therefore, in an image sensor or a sensor device in which such a color filter is arranged, (1) improvement of color reproducibility (2) prevention of malfunction of an optical device Further, in a liquid crystal display device, (1) improvement of contrast and color purity Improvement (2) Display quality with reduced alignment defects due to flatness (3) Use of non-translucent metal film as an electrode auxiliary line is excellent in preventing display quality deterioration due to signal delay or heat generation in the cell. The effect can be obtained.

[Brief description of the drawings]

1 (a) to 1 (e) are process diagrams for explaining a method of manufacturing a color filter of the present invention, FIG. 2 is a cross-sectional view of a ferroelectric liquid crystal device using the color filter obtained by the present invention, 3 (a) to 3 (h) are process diagrams of a liquid crystal display element using a color filter obtained by the present invention, and FIG. 4 is a schematic plan view of a photosensor array using the color filter obtained by the present invention. Partial view and FIG. 5 (a)
FIGS. 7A to 7G are process diagrams of forming the photosensor array shown in FIG. 1,22,23… Substrate 2,19… Conductive film pattern 3,4,5… Colored resin pattern 6,20… Metal film pattern 7,29… Protective film 21… Ferroelectric liquid crystal element 24 ... ferroelectric liquid crystal 25,26 ... transparent electrode 27,28 ... alignment control film 31 ... pixel electrode 32 ... gate electrode 33,39 ... insulating layer 34 ... through hole 35,45 ... light conductive layer 36 and 46 ...... n ⁺ layer 37 ...... source electrode 38 ...... drain electrode 40 ...... individual electrodes 41 ...... common electrode 47 ...... protective layer 49 ...... conductive layer

 ────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yutaka Inaba 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) References JP-A-2-153304 (JP, A)

Claims (4)

(57) [Claims] 1. A method for manufacturing a color filter in which a metal film is arranged without gaps between color filter pixels of each color on a substrate, comprising: (a) forming a conductive film pattern on a substrate; Forming a color filter pixel composed of a plurality of colored resin patterns, between the conductive film patterns, having a width greater than the inter-pattern width, and having a gap between adjacent pixels on the conductive film pattern, (C) forming a metal film without gaps between the color filter pixels by selectively plating the conductive film at least on the conductive film disposed between the plurality of colored resin patterns. Manufacturing method of color filter. 2. The method according to claim 1, wherein the substrate is a display unit of a display device. 3. The method according to claim 1, wherein the substrate is a solid-state imaging device. 4. The method according to claim 1, wherein the substrate is a light receiving surface of an image sensor.