JPS5564350A - Radioactive-ray receiving face - Google Patents

Radioactive-ray receiving face

Info

Publication number
JPS5564350A
JPS5564350A JP13680578A JP13680578A JPS5564350A JP S5564350 A JPS5564350 A JP S5564350A JP 13680578 A JP13680578 A JP 13680578A JP 13680578 A JP13680578 A JP 13680578A JP S5564350 A JPS5564350 A JP S5564350A
Authority
JP
Japan
Prior art keywords
crystal silicon
hydrogen
silicon substrate
receiving face
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13680578A
Other languages
Japanese (ja)
Other versions
JPH025017B2 (en
Inventor
Eiichi Maruyama
Saburo Adaka
Kiyohisa Inao
Yoshinori Imamura
Toshihisa Tsukada
Yukio Takasaki
Tadaaki Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13680578A priority Critical patent/JPS5564350A/en
Priority to FR7927300A priority patent/FR2441264A1/en
Priority to GB7938506A priority patent/GB2036426B/en
Priority to US06/092,021 priority patent/US4249106A/en
Priority to NLAANVRAGE7908196,A priority patent/NL179770C/en
Priority to DE19792945156 priority patent/DE2945156A1/en
Publication of JPS5564350A publication Critical patent/JPS5564350A/en
Publication of JPH025017B2 publication Critical patent/JPH025017B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain a light receiving face applicable to light receiving element of storage made having high resolution, by providing a non-crystal silicon film containing hydrogen at the opposite of incident side of crystal silicon substrate.
CONSTITUTION: Ohmic electrode 21 is provided at a portion of single or poly- crystal silicon substrate 20, while non-crystal silicon layer 22 containing hydrogen is formed at the opposite of incident side of silicon substrate and landing layer 23 is provided as required. Non-crystal silicon layer 22 is formed through silicon spattering, electron beam vacuum deposition, etc. under environment containing decomposed hydrogen of silane due to glow discharging. The depth of non-crystal silicon layer 22 is set to 1W20μm and the amount of contained hydrogen is preferable to be 5W40atomic%.
COPYRIGHT: (C)1980,JPO&Japio
JP13680578A 1978-11-08 1978-11-08 Radioactive-ray receiving face Granted JPS5564350A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP13680578A JPS5564350A (en) 1978-11-08 1978-11-08 Radioactive-ray receiving face
FR7927300A FR2441264A1 (en) 1978-11-08 1979-11-06 RADIATION SENSITIVE SCREEN
GB7938506A GB2036426B (en) 1978-11-08 1979-11-07 Radiation sensitive screen
US06/092,021 US4249106A (en) 1978-11-08 1979-11-07 Radiation sensitive screen
NLAANVRAGE7908196,A NL179770C (en) 1978-11-08 1979-11-08 RADIATION-SENSITIVE SCREEN OF THE LOAD STORAGE TYPE.
DE19792945156 DE2945156A1 (en) 1978-11-08 1979-11-08 RADIATION-SENSITIVE SCREEN

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13680578A JPS5564350A (en) 1978-11-08 1978-11-08 Radioactive-ray receiving face

Publications (2)

Publication Number Publication Date
JPS5564350A true JPS5564350A (en) 1980-05-15
JPH025017B2 JPH025017B2 (en) 1990-01-31

Family

ID=15183918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13680578A Granted JPS5564350A (en) 1978-11-08 1978-11-08 Radioactive-ray receiving face

Country Status (1)

Country Link
JP (1) JPS5564350A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136940A (en) * 1981-02-17 1982-08-24 Fuji Electric Corp Res & Dev Ltd Ozone decomposing catalyst
JPS5888977A (en) * 1981-11-20 1983-05-27 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS6047471A (en) * 1983-08-26 1985-03-14 Fuji Electric Corp Res & Dev Ltd Semiconductor radioactive ray detector

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136940A (en) * 1981-02-17 1982-08-24 Fuji Electric Corp Res & Dev Ltd Ozone decomposing catalyst
JPS6117545B2 (en) * 1981-02-17 1986-05-08 Fuji Denki Sogo Kenkyusho Kk
JPS5888977A (en) * 1981-11-20 1983-05-27 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS6350912B2 (en) * 1981-11-20 1988-10-12 Matsushita Electric Ind Co Ltd
JPS6047471A (en) * 1983-08-26 1985-03-14 Fuji Electric Corp Res & Dev Ltd Semiconductor radioactive ray detector

Also Published As

Publication number Publication date
JPH025017B2 (en) 1990-01-31

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