JPS56100486A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS56100486A JPS56100486A JP290280A JP290280A JPS56100486A JP S56100486 A JPS56100486 A JP S56100486A JP 290280 A JP290280 A JP 290280A JP 290280 A JP290280 A JP 290280A JP S56100486 A JPS56100486 A JP S56100486A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- conductive
- photoelectric conversion
- contain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain the photoelectric conversion element having little localized level density by forming an amorphous thin active layer containing Si and C of prescribed composition and being made to contain H2 and F on a conductive layer provided on a substrate, through the intermediary of an ohmic contact layer with high density of impurities. CONSTITUTION:On the layer 203 of a conductive substrate 201 composed of a substrate 202 and a conductive layer 203, a semiconductor active layer 205 is formed of amorphous material. This active layer 205 is constituted, from the side of the layer 203, by an N<+> type semiconductor layer 206 for attaining excellent ohmic contact with the layer 203 and by a photoabsorbing layer 207 of nondope or doped in N type. The layer 207 is prepared from a material containing C of 5- 100atomic% in relation to 1 of the amount of Si and made to contain H2 and F and has the thickness allowing a vacant layer to expand to the whole. After that, a thin metal layer 208 forming Schottky Barrier is connected to the layer 207, and on the layer 208 a comb-shaped or other electrode 209 is provided and the whole surface of the element is covered with a reflection preventing layer 212.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP290280A JPS56100486A (en) | 1980-01-14 | 1980-01-14 | Photoelectric conversion element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP290280A JPS56100486A (en) | 1980-01-14 | 1980-01-14 | Photoelectric conversion element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56100486A true JPS56100486A (en) | 1981-08-12 |
Family
ID=11542279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP290280A Pending JPS56100486A (en) | 1980-01-14 | 1980-01-14 | Photoelectric conversion element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56100486A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58128778A (en) * | 1982-01-28 | 1983-08-01 | Seiko Epson Corp | Semiconductor device |
JPS5954274A (en) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS5954276A (en) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS59115572A (en) * | 1982-12-23 | 1984-07-04 | Toshiba Corp | Photovoltaic device |
JPS59150485A (en) * | 1983-02-16 | 1984-08-28 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion semiconductor device |
JPS6046078A (en) * | 1983-08-23 | 1985-03-12 | Daihen Corp | Photovoltaic element and manufacture thereof |
JPS6188571A (en) * | 1984-10-05 | 1986-05-06 | Kanegafuchi Chem Ind Co Ltd | Photodetector |
JPS62169372A (en) * | 1987-01-09 | 1987-07-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5513938A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
-
1980
- 1980-01-14 JP JP290280A patent/JPS56100486A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5513938A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58128778A (en) * | 1982-01-28 | 1983-08-01 | Seiko Epson Corp | Semiconductor device |
JPS5954274A (en) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS5954276A (en) * | 1982-09-22 | 1984-03-29 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS59115572A (en) * | 1982-12-23 | 1984-07-04 | Toshiba Corp | Photovoltaic device |
JPS59150485A (en) * | 1983-02-16 | 1984-08-28 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion semiconductor device |
JPS6046078A (en) * | 1983-08-23 | 1985-03-12 | Daihen Corp | Photovoltaic element and manufacture thereof |
JPS6188571A (en) * | 1984-10-05 | 1986-05-06 | Kanegafuchi Chem Ind Co Ltd | Photodetector |
JPS62169372A (en) * | 1987-01-09 | 1987-07-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor element |
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