JPS54102992A - Photoelectric converting device - Google Patents
Photoelectric converting deviceInfo
- Publication number
- JPS54102992A JPS54102992A JP1011078A JP1011078A JPS54102992A JP S54102992 A JPS54102992 A JP S54102992A JP 1011078 A JP1011078 A JP 1011078A JP 1011078 A JP1011078 A JP 1011078A JP S54102992 A JPS54102992 A JP S54102992A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- region
- film
- junction
- circuit element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve the S/N ratio by forming the electrode which has an ohmic contact with the circuit element on the Si substrate containing the circuit element and which gives no evil effect to the hetero-junction and furthermore forming another hetero-junction featuring a high sensitivity and reduced dark current on the above mentioned electrode. CONSTITUTION:N<+>-type region 11 and P<+>-type region 12 are formed through diffusion on P-type Si substrate 10, and the entire surface is covered with insulator layer 16 and 17. Then an aperture is drilled on region 11, and 1st electrode 18 connecting to region 11 and extending onto the lamination film is coated, and Mo, Ta, Ti and the like are chosen for the material used then. In addition, positive hole blocking layer 19 composed of Zn, O, ZnS, ZnSe, CdS, CdSe, etc. is formed on electrode 18, and furthermore the photoconductive substance composed of (Zn1-xCdxTe)1-y(In2Te3)y is formed on layer 19. This photoconductive substance is changed into the photoconductive film 20 through the heat treatment, and transparent 2nd electrode 21 is provided on film 20. Thus, the dark current is reduced by selecting the materials to be used.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53010110A JPS5846066B2 (en) | 1978-01-31 | 1978-01-31 | Photoelectric conversion device |
| US06/006,129 US4236829A (en) | 1978-01-31 | 1979-01-24 | Solid-state image sensor |
| GB7903077A GB2014783B (en) | 1978-01-31 | 1979-01-29 | Solid-state image sensor |
| DE2903651A DE2903651C2 (en) | 1978-01-31 | 1979-01-31 | Solid state image sensing device |
| FR7902477A FR2416554A1 (en) | 1978-01-31 | 1979-01-31 | SOLID STATE SHOOTING DEVICE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53010110A JPS5846066B2 (en) | 1978-01-31 | 1978-01-31 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54102992A true JPS54102992A (en) | 1979-08-13 |
| JPS5846066B2 JPS5846066B2 (en) | 1983-10-14 |
Family
ID=11741166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53010110A Expired JPS5846066B2 (en) | 1978-01-31 | 1978-01-31 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5846066B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5670673A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Photoelectric converter |
| JPS5742174A (en) * | 1980-08-27 | 1982-03-09 | Fuji Photo Film Co Ltd | Solid image pickup device |
| JPS5752276A (en) * | 1980-09-12 | 1982-03-27 | Hitachi Ltd | Solid image pickup element |
-
1978
- 1978-01-31 JP JP53010110A patent/JPS5846066B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5670673A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Photoelectric converter |
| JPS6315750B2 (en) * | 1979-11-14 | 1988-04-06 | Hitachi Ltd | |
| JPS5742174A (en) * | 1980-08-27 | 1982-03-09 | Fuji Photo Film Co Ltd | Solid image pickup device |
| JPS5752276A (en) * | 1980-09-12 | 1982-03-27 | Hitachi Ltd | Solid image pickup element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5846066B2 (en) | 1983-10-14 |
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