JPS5775469A - Light receiving device - Google Patents

Light receiving device

Info

Publication number
JPS5775469A
JPS5775469A JP55150795A JP15079580A JPS5775469A JP S5775469 A JPS5775469 A JP S5775469A JP 55150795 A JP55150795 A JP 55150795A JP 15079580 A JP15079580 A JP 15079580A JP S5775469 A JPS5775469 A JP S5775469A
Authority
JP
Japan
Prior art keywords
light receiving
receiving element
dark current
light
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55150795A
Other languages
Japanese (ja)
Other versions
JPS6222543B2 (en
Inventor
Mitsuo Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP55150795A priority Critical patent/JPS5775469A/en
Publication of JPS5775469A publication Critical patent/JPS5775469A/en
Publication of JPS6222543B2 publication Critical patent/JPS6222543B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier

Abstract

PURPOSE:To contrive a decrease in dark current and the improvement in the temperature characteristics of dark current by a method wherein the cathode of the second light receiving element is coupled with the anode of the first light receiving element and photo screening is applied to the cathode of the second light receiving element. CONSTITUTION:Incident light 19 is irradiated at a light receiving element composed of an N type single crystal Si substrate 5 and a P type diffusion region 7 through a window 18 to flow light current IL and dark current Id1. Meanwhile, in the light receiving element composed of a P type diffusion region 6 and an N type diffusion region 8, a dark current Id2 only flows as the light is screened by a light screening layer 17. When the areas of two light receiving elements are set to keep the dark currents Id1 and Id2 almost equal, effective dark current at the output terminal becomes a very small value of Id1-Id2 because the anode of one light receiving element and the cathode of the other light receiving element are connected to a metal wiring layer 11. Furthermore, the temperature characteristics of the effective dark current will be improved by going with the above fact.
JP55150795A 1980-10-29 1980-10-29 Light receiving device Granted JPS5775469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150795A JPS5775469A (en) 1980-10-29 1980-10-29 Light receiving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150795A JPS5775469A (en) 1980-10-29 1980-10-29 Light receiving device

Publications (2)

Publication Number Publication Date
JPS5775469A true JPS5775469A (en) 1982-05-12
JPS6222543B2 JPS6222543B2 (en) 1987-05-19

Family

ID=15504593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150795A Granted JPS5775469A (en) 1980-10-29 1980-10-29 Light receiving device

Country Status (1)

Country Link
JP (1) JPS5775469A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972243A (en) * 1986-09-19 1990-11-20 Canon Kabushiki Kaisha Photoelectric conversion apparatus with shielded cell
US5245203A (en) * 1988-06-06 1993-09-14 Canon Kabushiki Kaisha Photoelectric converter with plural regions

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0260856U (en) * 1988-10-28 1990-05-07
JPH0299341U (en) * 1989-01-25 1990-08-08

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272195A (en) * 1975-12-12 1977-06-16 Matsushita Electric Ind Co Ltd Photoelectric converter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272195A (en) * 1975-12-12 1977-06-16 Matsushita Electric Ind Co Ltd Photoelectric converter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972243A (en) * 1986-09-19 1990-11-20 Canon Kabushiki Kaisha Photoelectric conversion apparatus with shielded cell
US5245203A (en) * 1988-06-06 1993-09-14 Canon Kabushiki Kaisha Photoelectric converter with plural regions

Also Published As

Publication number Publication date
JPS6222543B2 (en) 1987-05-19

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