JPS5775469A - Light receiving device - Google Patents
Light receiving deviceInfo
- Publication number
- JPS5775469A JPS5775469A JP55150795A JP15079580A JPS5775469A JP S5775469 A JPS5775469 A JP S5775469A JP 55150795 A JP55150795 A JP 55150795A JP 15079580 A JP15079580 A JP 15079580A JP S5775469 A JPS5775469 A JP S5775469A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- receiving element
- dark current
- light
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000012216 screening Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Abstract
PURPOSE:To contrive a decrease in dark current and the improvement in the temperature characteristics of dark current by a method wherein the cathode of the second light receiving element is coupled with the anode of the first light receiving element and photo screening is applied to the cathode of the second light receiving element. CONSTITUTION:Incident light 19 is irradiated at a light receiving element composed of an N type single crystal Si substrate 5 and a P type diffusion region 7 through a window 18 to flow light current IL and dark current Id1. Meanwhile, in the light receiving element composed of a P type diffusion region 6 and an N type diffusion region 8, a dark current Id2 only flows as the light is screened by a light screening layer 17. When the areas of two light receiving elements are set to keep the dark currents Id1 and Id2 almost equal, effective dark current at the output terminal becomes a very small value of Id1-Id2 because the anode of one light receiving element and the cathode of the other light receiving element are connected to a metal wiring layer 11. Furthermore, the temperature characteristics of the effective dark current will be improved by going with the above fact.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55150795A JPS5775469A (en) | 1980-10-29 | 1980-10-29 | Light receiving device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55150795A JPS5775469A (en) | 1980-10-29 | 1980-10-29 | Light receiving device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5775469A true JPS5775469A (en) | 1982-05-12 |
JPS6222543B2 JPS6222543B2 (en) | 1987-05-19 |
Family
ID=15504593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55150795A Granted JPS5775469A (en) | 1980-10-29 | 1980-10-29 | Light receiving device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5775469A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972243A (en) * | 1986-09-19 | 1990-11-20 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus with shielded cell |
US5245203A (en) * | 1988-06-06 | 1993-09-14 | Canon Kabushiki Kaisha | Photoelectric converter with plural regions |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260856U (en) * | 1988-10-28 | 1990-05-07 | ||
JPH0299341U (en) * | 1989-01-25 | 1990-08-08 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5272195A (en) * | 1975-12-12 | 1977-06-16 | Matsushita Electric Ind Co Ltd | Photoelectric converter |
-
1980
- 1980-10-29 JP JP55150795A patent/JPS5775469A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5272195A (en) * | 1975-12-12 | 1977-06-16 | Matsushita Electric Ind Co Ltd | Photoelectric converter |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4972243A (en) * | 1986-09-19 | 1990-11-20 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus with shielded cell |
US5245203A (en) * | 1988-06-06 | 1993-09-14 | Canon Kabushiki Kaisha | Photoelectric converter with plural regions |
Also Published As
Publication number | Publication date |
---|---|
JPS6222543B2 (en) | 1987-05-19 |
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