JPS5766622A - Formation of cdte film - Google Patents

Formation of cdte film

Info

Publication number
JPS5766622A
JPS5766622A JP55142774A JP14277480A JPS5766622A JP S5766622 A JPS5766622 A JP S5766622A JP 55142774 A JP55142774 A JP 55142774A JP 14277480 A JP14277480 A JP 14277480A JP S5766622 A JPS5766622 A JP S5766622A
Authority
JP
Japan
Prior art keywords
cdte
film
impurity
evaporation source
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55142774A
Other languages
Japanese (ja)
Inventor
Koji Mori
Koichi Sakurai
Masakuni Itagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP55142774A priority Critical patent/JPS5766622A/en
Publication of JPS5766622A publication Critical patent/JPS5766622A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To control impurity doping easily, by using a primary evaporation source composed of CdxTe1-x and a secondary evaporation source composed of CdTe and impurity to be doped simultaneously to form a CdTe film by means of evaporation. CONSTITUTION:A primary evaporation source is composed of CdxTe1-x (0<=X<= 1), as an evaporation source for a CdTe film in a thin-film photoelectric transducer. A secondary evaporation source is composed of CdTe and impurity to be doped in CdTe. An N- or P-film of CdTe is deposited with primary and secondary evaporation sources simultaneously. In this case, if the CdTe film is made to be of P type, at least one impurity will be chosen and included among lithium, copper, silver, gold, lead, phosphor, and antimony with X<0.5. If it is made to be of N type, at least one impurity will be selected and included from among indium, aluminium, and iodine with X>0.5.
JP55142774A 1980-10-13 1980-10-13 Formation of cdte film Pending JPS5766622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55142774A JPS5766622A (en) 1980-10-13 1980-10-13 Formation of cdte film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55142774A JPS5766622A (en) 1980-10-13 1980-10-13 Formation of cdte film

Publications (1)

Publication Number Publication Date
JPS5766622A true JPS5766622A (en) 1982-04-22

Family

ID=15323270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55142774A Pending JPS5766622A (en) 1980-10-13 1980-10-13 Formation of cdte film

Country Status (1)

Country Link
JP (1) JPS5766622A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262472A (en) * 1984-06-11 1985-12-25 Matsushita Electric Ind Co Ltd Manufacture of transistor
JPS616878A (en) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd Thin-film transistor and manufacture thereof
JPS6160065A (en) * 1984-08-31 1986-03-27 Matsushita Electric Ind Co Ltd Photoelectric converter
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262472A (en) * 1984-06-11 1985-12-25 Matsushita Electric Ind Co Ltd Manufacture of transistor
JPS616878A (en) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd Thin-film transistor and manufacture thereof
JPS6160065A (en) * 1984-08-31 1986-03-27 Matsushita Electric Ind Co Ltd Photoelectric converter
JPH0255954B2 (en) * 1984-08-31 1990-11-28 Matsushita Electric Ind Co Ltd
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films

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